CN102906868B - 降低静电放电的设备及方法 - Google Patents

降低静电放电的设备及方法 Download PDF

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Publication number
CN102906868B
CN102906868B CN201180020890.7A CN201180020890A CN102906868B CN 102906868 B CN102906868 B CN 102906868B CN 201180020890 A CN201180020890 A CN 201180020890A CN 102906868 B CN102906868 B CN 102906868B
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China
Prior art keywords
substrate
carrier structure
substrate carrier
support
ground
Prior art date
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Active
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CN201180020890.7A
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English (en)
Chinese (zh)
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CN102906868A (zh
Inventor
B·G·米勒
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Applied Materials Inc
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Applied Materials Inc
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
CN201180020890.7A 2010-05-26 2011-05-23 降低静电放电的设备及方法 Active CN102906868B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10163959.9 2010-05-26
EP10163959A EP2390906A1 (en) 2010-05-26 2010-05-26 Apparatus and method for electrostatic discharge (ESD) reduction
PCT/EP2011/058362 WO2011147775A1 (en) 2010-05-26 2011-05-23 Apparatus and method for electrostatic discharge (esd) reduction

Publications (2)

Publication Number Publication Date
CN102906868A CN102906868A (zh) 2013-01-30
CN102906868B true CN102906868B (zh) 2016-06-01

Family

ID=42664837

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180020890.7A Active CN102906868B (zh) 2010-05-26 2011-05-23 降低静电放电的设备及方法

Country Status (7)

Country Link
US (1) US8531198B2 (https=)
EP (1) EP2390906A1 (https=)
JP (1) JP5876037B2 (https=)
KR (1) KR101506937B1 (https=)
CN (1) CN102906868B (https=)
TW (1) TWI459503B (https=)
WO (1) WO2011147775A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012100927A1 (de) * 2012-02-06 2013-08-08 Roth & Rau Ag Prozessmodul
US9229446B2 (en) 2012-05-08 2016-01-05 International Business Machines Corporation Production line quality processes
KR102205030B1 (ko) 2013-12-17 2021-01-20 삼성디스플레이 주식회사 표시장치
KR102271585B1 (ko) 2014-02-10 2021-07-01 삼성디스플레이 주식회사 표시 장치
CN115901831A (zh) * 2014-12-22 2023-04-04 应用材料公司 用于检查基板的设备、用于检查基板的方法、大面积基板检查设备及其操作方法
CN110178238B (zh) * 2017-01-11 2023-07-28 应用材料公司 用于处理基板的方法和设备和对应的显示元件
CN108470851B (zh) * 2018-03-26 2020-03-06 京东方科技集团股份有限公司 基板处理方法和基板处理装置
CN110899271B (zh) * 2018-09-17 2021-10-15 北京北方华创微电子装备有限公司 远程等离子源的调整装置及远程等离子源清洗系统
CN119375567A (zh) * 2023-07-25 2025-01-28 Jcet星科金朋韩国有限公司 用于测试电子器件的设备

Citations (12)

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US6160411A (en) * 1996-04-03 2000-12-12 Pycon, Inc. Apparatus for testing an integrated circuit in an oven during burn-in
US6326220B1 (en) * 2000-11-11 2001-12-04 Macronix International Co., Ltd. Method for determining near-surface doping concentration
US6512391B2 (en) * 1999-06-30 2003-01-28 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
CN1612314A (zh) * 2003-10-31 2005-05-04 东京毅力科创株式会社 静电吸附装置、等离子体处理装置及等离子体处理方法
US6914423B2 (en) * 2000-09-05 2005-07-05 Cascade Microtech, Inc. Probe station
CN1636081A (zh) * 2001-12-26 2005-07-06 应用材料股份有限公司 无电电镀系统
CN1654969A (zh) * 2004-02-12 2005-08-17 应用材料股份有限公司 集成基材移动模块的电子束测试系统
CN1854743A (zh) * 2005-04-29 2006-11-01 应用材料公司 在线电子束测试系统
US20060273815A1 (en) * 2005-06-06 2006-12-07 Applied Materials, Inc. Substrate support with integrated prober drive
EP1826813A1 (en) * 2004-12-01 2007-08-29 Nikon Corporation Stage device and exposure apparatus
WO2010016504A1 (ja) * 2008-08-08 2010-02-11 株式会社 日立ハイテクノロジーズ 検査装置
US20100097086A1 (en) * 2008-10-21 2010-04-22 Applied Materials, Inc. Apparatus and method for active voltage compensation

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JPH06219513A (ja) * 1993-01-27 1994-08-09 Nikon Corp 搬送装置
JPH11145266A (ja) * 1997-11-07 1999-05-28 Tokyo Electron Ltd 静電吸着装置および静電吸着方法、ならびにそれを用いた基板搬送装置および基板搬送方法
JPH11219882A (ja) * 1998-02-02 1999-08-10 Nikon Corp ステージ及び露光装置
US6319102B1 (en) * 1999-07-09 2001-11-20 International Business Machines Corporation Capacitor coupled chuck for carbon dioxide snow cleaning system
JP4590031B2 (ja) * 2000-07-26 2010-12-01 東京エレクトロン株式会社 被処理体の載置機構
JP4895635B2 (ja) * 2006-02-20 2012-03-14 セイコーインスツル株式会社 搬送装置
TW200746268A (en) * 2006-04-11 2007-12-16 Applied Materials Inc Process for forming cobalt-containing materials
US8008166B2 (en) * 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
JP5142634B2 (ja) * 2007-08-27 2013-02-13 新電元工業株式会社 電界効果型半導体装置
JP2009054746A (ja) * 2007-08-27 2009-03-12 Nikon Corp 静電チャック及び静電チャック方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6160411A (en) * 1996-04-03 2000-12-12 Pycon, Inc. Apparatus for testing an integrated circuit in an oven during burn-in
US6512391B2 (en) * 1999-06-30 2003-01-28 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
US6914423B2 (en) * 2000-09-05 2005-07-05 Cascade Microtech, Inc. Probe station
US6326220B1 (en) * 2000-11-11 2001-12-04 Macronix International Co., Ltd. Method for determining near-surface doping concentration
CN1636081A (zh) * 2001-12-26 2005-07-06 应用材料股份有限公司 无电电镀系统
CN1612314A (zh) * 2003-10-31 2005-05-04 东京毅力科创株式会社 静电吸附装置、等离子体处理装置及等离子体处理方法
CN1654969A (zh) * 2004-02-12 2005-08-17 应用材料股份有限公司 集成基材移动模块的电子束测试系统
EP1826813A1 (en) * 2004-12-01 2007-08-29 Nikon Corporation Stage device and exposure apparatus
CN1854743A (zh) * 2005-04-29 2006-11-01 应用材料公司 在线电子束测试系统
US20060273815A1 (en) * 2005-06-06 2006-12-07 Applied Materials, Inc. Substrate support with integrated prober drive
WO2010016504A1 (ja) * 2008-08-08 2010-02-11 株式会社 日立ハイテクノロジーズ 検査装置
US20100097086A1 (en) * 2008-10-21 2010-04-22 Applied Materials, Inc. Apparatus and method for active voltage compensation

Also Published As

Publication number Publication date
TWI459503B (zh) 2014-11-01
JP5876037B2 (ja) 2016-03-02
KR20130075730A (ko) 2013-07-05
CN102906868A (zh) 2013-01-30
US20110291683A1 (en) 2011-12-01
KR101506937B1 (ko) 2015-03-31
WO2011147775A1 (en) 2011-12-01
US8531198B2 (en) 2013-09-10
JP2013528320A (ja) 2013-07-08
EP2390906A1 (en) 2011-11-30
TW201218309A (en) 2012-05-01

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