JP5876037B2 - 静電放電（ｅｓｄ）の低減のための装置及び方法 - Google Patents

静電放電（ｅｓｄ）の低減のための装置及び方法 Download PDF

Info

Publication number
JP5876037B2
JP5876037B2 JP2013511632A JP2013511632A JP5876037B2 JP 5876037 B2 JP5876037 B2 JP 5876037B2 JP 2013511632 A JP2013511632 A JP 2013511632A JP 2013511632 A JP2013511632 A JP 2013511632A JP 5876037 B2 JP5876037 B2 JP 5876037B2
Authority
JP
Japan
Prior art keywords
substrate
carrier structure
support
substrate carrier
ground
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013511632A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013528320A5 (https=
JP2013528320A (ja
Inventor
ベルンハルト グンター ミュエラー
ベルンハルト グンター ミュエラー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2013528320A publication Critical patent/JP2013528320A/ja
Publication of JP2013528320A5 publication Critical patent/JP2013528320A5/ja
Application granted granted Critical
Publication of JP5876037B2 publication Critical patent/JP5876037B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
JP2013511632A 2010-05-26 2011-05-23 静電放電（ｅｓｄ）の低減のための装置及び方法 Expired - Fee Related JP5876037B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10163959.9 2010-05-26
EP10163959A EP2390906A1 (en) 2010-05-26 2010-05-26 Apparatus and method for electrostatic discharge (ESD) reduction
PCT/EP2011/058362 WO2011147775A1 (en) 2010-05-26 2011-05-23 Apparatus and method for electrostatic discharge (esd) reduction

Publications (3)

Publication Number Publication Date
JP2013528320A JP2013528320A (ja) 2013-07-08
JP2013528320A5 JP2013528320A5 (https=) 2014-08-07
JP5876037B2 true JP5876037B2 (ja) 2016-03-02

Family

ID=42664837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013511632A Expired - Fee Related JP5876037B2 (ja) 2010-05-26 2011-05-23 静電放電（ｅｓｄ）の低減のための装置及び方法

Country Status (7)

Country Link
US (1) US8531198B2 (https=)
EP (1) EP2390906A1 (https=)
JP (1) JP5876037B2 (https=)
KR (1) KR101506937B1 (https=)
CN (1) CN102906868B (https=)
TW (1) TWI459503B (https=)
WO (1) WO2011147775A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012100927A1 (de) * 2012-02-06 2013-08-08 Roth & Rau Ag Prozessmodul
US9229446B2 (en) 2012-05-08 2016-01-05 International Business Machines Corporation Production line quality processes
KR102205030B1 (ko) 2013-12-17 2021-01-20 삼성디스플레이 주식회사 표시장치
KR102271585B1 (ko) 2014-02-10 2021-07-01 삼성디스플레이 주식회사 표시 장치
CN115901831A (zh) * 2014-12-22 2023-04-04 应用材料公司 用于检查基板的设备、用于检查基板的方法、大面积基板检查设备及其操作方法
CN110178238B (zh) * 2017-01-11 2023-07-28 应用材料公司 用于处理基板的方法和设备和对应的显示元件
CN108470851B (zh) * 2018-03-26 2020-03-06 京东方科技集团股份有限公司 基板处理方法和基板处理装置
CN110899271B (zh) * 2018-09-17 2021-10-15 北京北方华创微电子装备有限公司 远程等离子源的调整装置及远程等离子源清洗系统
CN119375567A (zh) * 2023-07-25 2025-01-28 Jcet星科金朋韩国有限公司 用于测试电子器件的设备

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06219513A (ja) * 1993-01-27 1994-08-09 Nikon Corp 搬送装置
US5966021A (en) * 1996-04-03 1999-10-12 Pycon, Inc. Apparatus for testing an integrated circuit in an oven during burn-in
JPH11145266A (ja) * 1997-11-07 1999-05-28 Tokyo Electron Ltd 静電吸着装置および静電吸着方法、ならびにそれを用いた基板搬送装置および基板搬送方法
JPH11219882A (ja) * 1998-02-02 1999-08-10 Nikon Corp ステージ及び露光装置
US6445202B1 (en) * 1999-06-30 2002-09-03 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
US6319102B1 (en) * 1999-07-09 2001-11-20 International Business Machines Corporation Capacitor coupled chuck for carbon dioxide snow cleaning system
JP4590031B2 (ja) * 2000-07-26 2010-12-01 東京エレクトロン株式会社 被処理体の載置機構
US6914423B2 (en) * 2000-09-05 2005-07-05 Cascade Microtech, Inc. Probe station
US6326220B1 (en) * 2000-11-11 2001-12-04 Macronix International Co., Ltd. Method for determining near-surface doping concentration
US6824612B2 (en) * 2001-12-26 2004-11-30 Applied Materials, Inc. Electroless plating system
JP4421874B2 (ja) * 2003-10-31 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US6833717B1 (en) * 2004-02-12 2004-12-21 Applied Materials, Inc. Electron beam test system with integrated substrate transfer module
JP4905135B2 (ja) * 2004-12-01 2012-03-28 株式会社ニコン ステージ装置及び露光装置
US7535238B2 (en) * 2005-04-29 2009-05-19 Applied Materials, Inc. In-line electron beam test system
US20060273815A1 (en) 2005-06-06 2006-12-07 Applied Materials, Inc. Substrate support with integrated prober drive
JP4895635B2 (ja) * 2006-02-20 2012-03-14 セイコーインスツル株式会社 搬送装置
TW200746268A (en) * 2006-04-11 2007-12-16 Applied Materials Inc Process for forming cobalt-containing materials
US8008166B2 (en) * 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
JP5142634B2 (ja) * 2007-08-27 2013-02-13 新電元工業株式会社 電界効果型半導体装置
JP2009054746A (ja) * 2007-08-27 2009-03-12 Nikon Corp 静電チャック及び静電チャック方法
JP5276921B2 (ja) * 2008-08-08 2013-08-28 株式会社日立ハイテクノロジーズ 検査装置
EP2180327A1 (en) * 2008-10-21 2010-04-28 Applied Materials, Inc. Apparatus and method for active voltage compensation

Also Published As

Publication number Publication date
TWI459503B (zh) 2014-11-01
KR20130075730A (ko) 2013-07-05
CN102906868A (zh) 2013-01-30
CN102906868B (zh) 2016-06-01
US20110291683A1 (en) 2011-12-01
KR101506937B1 (ko) 2015-03-31
WO2011147775A1 (en) 2011-12-01
US8531198B2 (en) 2013-09-10
JP2013528320A (ja) 2013-07-08
EP2390906A1 (en) 2011-11-30
TW201218309A (en) 2012-05-01

Similar Documents

Publication Publication Date Title
JP5876037B2 (ja) 静電放電（ｅｓｄ）の低減のための装置及び方法
US6833717B1 (en) Electron beam test system with integrated substrate transfer module
WO2013183740A1 (ja) ウエハ検査用インターフェース及びウエハ検査装置
KR101023890B1 (ko) Ｔｆｔ-ｌｃｄ 테스팅을 위한 소형 프로버
JP5583678B2 (ja) 能動的電圧補償のための装置及び方法
US8115506B2 (en) Localization of driver failures within liquid crystal displays
JP2018155527A (ja) 検査装置の診断方法および検査システム
JP5047541B2 (ja) 統合されたプローバドライブを備えた基板支持部
US7317325B2 (en) Line short localization in LCD pixel arrays
US20060022694A1 (en) Large substrate test system
KR102711893B1 (ko) 기판 상의 라인 결함을 식별하기 위한 방법, 및 기판 상의 라인 결함을 식별하기 위한 장치
US10871516B2 (en) Inspection system
KR100857764B1 (ko) 전자빔 검사 시스템 및 검사방법

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140523

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140620

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20140620

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20140709

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140715

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20141014

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20141021

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20141112

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20141119

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20141212

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20141219

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150113

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150414

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150710

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150812

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150911

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151008

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20151228

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160120

R150 Certificate of patent or registration of utility model

Ref document number: 5876037

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees