TWI459503B - 降低靜電放電之設備及方法 - Google Patents
降低靜電放電之設備及方法 Download PDFInfo
- Publication number
- TWI459503B TWI459503B TW100116197A TW100116197A TWI459503B TW I459503 B TWI459503 B TW I459503B TW 100116197 A TW100116197 A TW 100116197A TW 100116197 A TW100116197 A TW 100116197A TW I459503 B TWI459503 B TW I459503B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- carrier structure
- support
- substrate carrier
- support unit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
- H10P72/722—Details of electrostatic chucks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Tests Of Electronic Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP10163959A EP2390906A1 (en) | 2010-05-26 | 2010-05-26 | Apparatus and method for electrostatic discharge (ESD) reduction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201218309A TW201218309A (en) | 2012-05-01 |
| TWI459503B true TWI459503B (zh) | 2014-11-01 |
Family
ID=42664837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100116197A TWI459503B (zh) | 2010-05-26 | 2011-05-09 | 降低靜電放電之設備及方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8531198B2 (https=) |
| EP (1) | EP2390906A1 (https=) |
| JP (1) | JP5876037B2 (https=) |
| KR (1) | KR101506937B1 (https=) |
| CN (1) | CN102906868B (https=) |
| TW (1) | TWI459503B (https=) |
| WO (1) | WO2011147775A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012100927A1 (de) * | 2012-02-06 | 2013-08-08 | Roth & Rau Ag | Prozessmodul |
| US9229446B2 (en) | 2012-05-08 | 2016-01-05 | International Business Machines Corporation | Production line quality processes |
| KR102205030B1 (ko) | 2013-12-17 | 2021-01-20 | 삼성디스플레이 주식회사 | 표시장치 |
| KR102271585B1 (ko) | 2014-02-10 | 2021-07-01 | 삼성디스플레이 주식회사 | 표시 장치 |
| CN115901831A (zh) * | 2014-12-22 | 2023-04-04 | 应用材料公司 | 用于检查基板的设备、用于检查基板的方法、大面积基板检查设备及其操作方法 |
| CN110178238B (zh) * | 2017-01-11 | 2023-07-28 | 应用材料公司 | 用于处理基板的方法和设备和对应的显示元件 |
| CN108470851B (zh) * | 2018-03-26 | 2020-03-06 | 京东方科技集团股份有限公司 | 基板处理方法和基板处理装置 |
| CN110899271B (zh) * | 2018-09-17 | 2021-10-15 | 北京北方华创微电子装备有限公司 | 远程等离子源的调整装置及远程等离子源清洗系统 |
| CN119375567A (zh) * | 2023-07-25 | 2025-01-28 | Jcet星科金朋韩国有限公司 | 用于测试电子器件的设备 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6326220B1 (en) * | 2000-11-11 | 2001-12-04 | Macronix International Co., Ltd. | Method for determining near-surface doping concentration |
| US6512391B2 (en) * | 1999-06-30 | 2003-01-28 | Cascade Microtech, Inc. | Probe station thermal chuck with shielding for capacitive current |
| TW200632575A (en) * | 2004-12-01 | 2006-09-16 | Nikon Corp | Stage device and exposure apparatus |
| WO2010016504A1 (ja) * | 2008-08-08 | 2010-02-11 | 株式会社 日立ハイテクノロジーズ | 検査装置 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06219513A (ja) * | 1993-01-27 | 1994-08-09 | Nikon Corp | 搬送装置 |
| US5966021A (en) * | 1996-04-03 | 1999-10-12 | Pycon, Inc. | Apparatus for testing an integrated circuit in an oven during burn-in |
| JPH11145266A (ja) * | 1997-11-07 | 1999-05-28 | Tokyo Electron Ltd | 静電吸着装置および静電吸着方法、ならびにそれを用いた基板搬送装置および基板搬送方法 |
| JPH11219882A (ja) * | 1998-02-02 | 1999-08-10 | Nikon Corp | ステージ及び露光装置 |
| US6319102B1 (en) * | 1999-07-09 | 2001-11-20 | International Business Machines Corporation | Capacitor coupled chuck for carbon dioxide snow cleaning system |
| JP4590031B2 (ja) * | 2000-07-26 | 2010-12-01 | 東京エレクトロン株式会社 | 被処理体の載置機構 |
| US6914423B2 (en) * | 2000-09-05 | 2005-07-05 | Cascade Microtech, Inc. | Probe station |
| US6824612B2 (en) * | 2001-12-26 | 2004-11-30 | Applied Materials, Inc. | Electroless plating system |
| JP4421874B2 (ja) * | 2003-10-31 | 2010-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US6833717B1 (en) * | 2004-02-12 | 2004-12-21 | Applied Materials, Inc. | Electron beam test system with integrated substrate transfer module |
| US7535238B2 (en) * | 2005-04-29 | 2009-05-19 | Applied Materials, Inc. | In-line electron beam test system |
| US20060273815A1 (en) | 2005-06-06 | 2006-12-07 | Applied Materials, Inc. | Substrate support with integrated prober drive |
| JP4895635B2 (ja) * | 2006-02-20 | 2012-03-14 | セイコーインスツル株式会社 | 搬送装置 |
| TW200746268A (en) * | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
| US8008166B2 (en) * | 2007-07-26 | 2011-08-30 | Applied Materials, Inc. | Method and apparatus for cleaning a substrate surface |
| JP5142634B2 (ja) * | 2007-08-27 | 2013-02-13 | 新電元工業株式会社 | 電界効果型半導体装置 |
| JP2009054746A (ja) * | 2007-08-27 | 2009-03-12 | Nikon Corp | 静電チャック及び静電チャック方法 |
| EP2180327A1 (en) * | 2008-10-21 | 2010-04-28 | Applied Materials, Inc. | Apparatus and method for active voltage compensation |
-
2010
- 2010-05-26 EP EP10163959A patent/EP2390906A1/en not_active Withdrawn
- 2010-06-16 US US12/816,798 patent/US8531198B2/en active Active
-
2011
- 2011-05-09 TW TW100116197A patent/TWI459503B/zh active
- 2011-05-23 WO PCT/EP2011/058362 patent/WO2011147775A1/en not_active Ceased
- 2011-05-23 JP JP2013511632A patent/JP5876037B2/ja not_active Expired - Fee Related
- 2011-05-23 KR KR1020127027935A patent/KR101506937B1/ko active Active
- 2011-05-23 CN CN201180020890.7A patent/CN102906868B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6512391B2 (en) * | 1999-06-30 | 2003-01-28 | Cascade Microtech, Inc. | Probe station thermal chuck with shielding for capacitive current |
| US6326220B1 (en) * | 2000-11-11 | 2001-12-04 | Macronix International Co., Ltd. | Method for determining near-surface doping concentration |
| TW200632575A (en) * | 2004-12-01 | 2006-09-16 | Nikon Corp | Stage device and exposure apparatus |
| WO2010016504A1 (ja) * | 2008-08-08 | 2010-02-11 | 株式会社 日立ハイテクノロジーズ | 検査装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5876037B2 (ja) | 2016-03-02 |
| KR20130075730A (ko) | 2013-07-05 |
| CN102906868A (zh) | 2013-01-30 |
| CN102906868B (zh) | 2016-06-01 |
| US20110291683A1 (en) | 2011-12-01 |
| KR101506937B1 (ko) | 2015-03-31 |
| WO2011147775A1 (en) | 2011-12-01 |
| US8531198B2 (en) | 2013-09-10 |
| JP2013528320A (ja) | 2013-07-08 |
| EP2390906A1 (en) | 2011-11-30 |
| TW201218309A (en) | 2012-05-01 |
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