CN102891152B - 半导体封装体 - Google Patents

半导体封装体 Download PDF

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Publication number
CN102891152B
CN102891152B CN201210194646.9A CN201210194646A CN102891152B CN 102891152 B CN102891152 B CN 102891152B CN 201210194646 A CN201210194646 A CN 201210194646A CN 102891152 B CN102891152 B CN 102891152B
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China
Prior art keywords
peripheral frame
adhesive portion
semiconductor package
adhesive
imaging apparatus
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CN201210194646.9A
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English (en)
Chinese (zh)
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CN102891152A (zh
Inventor
布施正之
松泽悟志
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Shinko Electric Co Ltd
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Shinko Electric Co Ltd
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Publication of CN102891152A publication Critical patent/CN102891152A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
CN201210194646.9A 2011-06-10 2012-06-05 半导体封装体 Active CN102891152B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011130536A JP5746919B2 (ja) 2011-06-10 2011-06-10 半導体パッケージ
JP2011-130536 2011-06-10

Publications (2)

Publication Number Publication Date
CN102891152A CN102891152A (zh) 2013-01-23
CN102891152B true CN102891152B (zh) 2016-12-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210194646.9A Active CN102891152B (zh) 2011-06-10 2012-06-05 半导体封装体

Country Status (3)

Country Link
US (1) US8829632B2 (https=)
JP (1) JP5746919B2 (https=)
CN (1) CN102891152B (https=)

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JP2960324B2 (ja) 1995-01-30 1999-10-06 俊輔 横須賀 敷地内排水端末処理装置
KR20130114352A (ko) * 2012-04-09 2013-10-18 삼성전자주식회사 반도체 패키지 및 그 제조 방법
EP3001466B1 (en) * 2013-05-23 2019-07-03 LG Innotek Co., Ltd. Light-emitting module
JP2015032653A (ja) 2013-08-01 2015-02-16 株式会社東芝 固体撮像装置
US9018753B2 (en) * 2013-08-02 2015-04-28 Stmicroelectronics Pte Ltd Electronic modules
JP6100195B2 (ja) * 2014-04-09 2017-03-22 富士フイルム株式会社 撮像装置
KR102221598B1 (ko) * 2014-06-16 2021-03-02 엘지이노텍 주식회사 발광 소자 패키지
JP6274058B2 (ja) * 2014-09-22 2018-02-07 株式会社デンソー 電子装置、及び電子装置を備えた電子構造体
CN105511206A (zh) * 2014-09-26 2016-04-20 宁波舜宇光电信息有限公司 一种影像模组及其感光芯片封装结构及方法
JP6477421B2 (ja) * 2015-10-29 2019-03-06 三菱電機株式会社 半導体装置
US10049896B2 (en) 2015-12-09 2018-08-14 International Business Machines Corporation Lid attach optimization to limit electronic package warpage
US9947603B2 (en) 2015-12-09 2018-04-17 International Business Machines Corporation Lid attach optimization to limit electronic package warpage
CN109510932B (zh) * 2016-02-18 2021-05-04 宁波舜宇光电信息有限公司 基于模塑工艺的摄像模组及其模塑线路板组件及制造方法
US9781324B2 (en) * 2016-02-18 2017-10-03 Ningbo Sunny Opotech Co., Ltd. Array imaging module and molded photosensitive assembly, circuit board assembly and manufacturing methods thereof for electronic device
US10477088B2 (en) 2016-04-21 2019-11-12 Ningbo Sunny Opotech Co., Ltd. Camera module and array camera module based on integral packaging technology
US9754983B1 (en) * 2016-07-14 2017-09-05 Semiconductor Components Industries, Llc Chip scale package and related methods
JP7048573B2 (ja) * 2016-08-01 2022-04-07 ▲寧▼波舜宇光▲電▼信息有限公司 カメラモジュールおよびそのモールド回路基板組立体とモールド感光組立体並びに製造方法
KR20190029171A (ko) * 2017-09-12 2019-03-20 삼성전자주식회사 이미지 센서 모듈
JP6971826B2 (ja) * 2017-12-18 2021-11-24 新光電気工業株式会社 固体撮像装置及びその製造方法
JP7184599B2 (ja) * 2018-11-06 2022-12-06 ローム株式会社 半導体発光装置
US11515220B2 (en) * 2019-12-04 2022-11-29 Advanced Semiconductor Engineering, Inc. Semiconductor package structures and methods of manufacturing the same
CN112054064A (zh) * 2020-09-07 2020-12-08 深圳市灵明光子科技有限公司 芯片级封装结构、光电装置及芯片级封装方法
CN214381086U (zh) * 2021-01-22 2021-10-08 南昌欧菲光电技术有限公司 感光芯片及封装结构、摄像模组和电子设备
CN115312549A (zh) * 2021-05-05 2022-11-08 胜丽国际股份有限公司 传感器封装结构
JP7381905B2 (ja) * 2021-06-15 2023-11-16 日亜化学工業株式会社 発光装置、及び、発光装置の製造方法

Citations (2)

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Publication number Priority date Publication date Assignee Title
CN1383215A (zh) * 2001-03-21 2002-12-04 佳能株式会社 半导体器件及其制造方法
CN101512765A (zh) * 2006-09-15 2009-08-19 富士通微电子株式会社 半导体器件及其制造方法

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JPS62262445A (ja) 1986-05-09 1987-11-14 Matsushita Electronics Corp 固体撮像装置
JPH0470752A (ja) 1990-07-12 1992-03-05 Asahi Chem Ind Co Ltd 新規な光重合性組成物
JP2002368235A (ja) * 2001-03-21 2002-12-20 Canon Inc 半導体装置及びその製造方法
US6949808B2 (en) * 2001-11-30 2005-09-27 Matsushita Electric Industrial Co., Ltd. Solid-state imaging apparatus and manufacturing method thereof
JP3876792B2 (ja) 2002-08-07 2007-02-07 日本電信電話株式会社 ユーザプレゼンス情報によるメディア選択方法及びメディア選択システム及びメディア選択プログラム及びコンピュータ読み取り可能な記録媒体
JP2006245118A (ja) * 2005-03-01 2006-09-14 Konica Minolta Opto Inc 撮像装置及び撮像装置の製造方法
WO2006101270A1 (en) 2005-03-25 2006-09-28 Fujifilm Corporation Solid state imaging device and manufacturing method thereof
JP4673721B2 (ja) 2005-10-21 2011-04-20 富士通セミコンダクター株式会社 撮像装置及びその製造方法
JP5515223B2 (ja) * 2008-02-12 2014-06-11 ソニー株式会社 半導体装置
JP5165437B2 (ja) * 2008-03-27 2013-03-21 シャープ株式会社 固体撮像装置、および電子機器
JP2010141123A (ja) 2008-12-11 2010-06-24 Shinko Electric Ind Co Ltd 電子部品装置
TW201104747A (en) * 2009-07-29 2011-02-01 Kingpak Tech Inc Image sensor package structure
JP5658466B2 (ja) * 2010-02-05 2015-01-28 キヤノン株式会社 固体撮像装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1383215A (zh) * 2001-03-21 2002-12-04 佳能株式会社 半导体器件及其制造方法
CN101512765A (zh) * 2006-09-15 2009-08-19 富士通微电子株式会社 半导体器件及其制造方法

Also Published As

Publication number Publication date
US8829632B2 (en) 2014-09-09
JP5746919B2 (ja) 2015-07-08
CN102891152A (zh) 2013-01-23
US20120313203A1 (en) 2012-12-13
JP2013004534A (ja) 2013-01-07

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