CN102881693A - 存储器件及其制作方法 - Google Patents
存储器件及其制作方法 Download PDFInfo
- Publication number
- CN102881693A CN102881693A CN201210413670.7A CN201210413670A CN102881693A CN 102881693 A CN102881693 A CN 102881693A CN 201210413670 A CN201210413670 A CN 201210413670A CN 102881693 A CN102881693 A CN 102881693A
- Authority
- CN
- China
- Prior art keywords
- floating boom
- memory device
- grid
- silicon nitride
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000007667 floating Methods 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 26
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 abstract description 14
- 238000010168 coupling process Methods 0.000 abstract description 14
- 238000005859 coupling reaction Methods 0.000 abstract description 14
- 238000005498 polishing Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000003359 percent control normalization Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210413670.7A CN102881693B (zh) | 2012-10-25 | 2012-10-25 | 存储器件及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210413670.7A CN102881693B (zh) | 2012-10-25 | 2012-10-25 | 存储器件及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102881693A true CN102881693A (zh) | 2013-01-16 |
CN102881693B CN102881693B (zh) | 2017-05-24 |
Family
ID=47482966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210413670.7A Active CN102881693B (zh) | 2012-10-25 | 2012-10-25 | 存储器件及其制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102881693B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105097475A (zh) * | 2014-05-13 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 栅极结构及其形成方法 |
CN105206614A (zh) * | 2015-08-19 | 2015-12-30 | 武汉新芯集成电路制造有限公司 | 浮栅型闪存结构及其制备方法 |
CN105576016A (zh) * | 2014-10-09 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | 栅极结构、其制作方法及闪存器件 |
CN108336086A (zh) * | 2017-01-17 | 2018-07-27 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法、电子装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7105406B2 (en) * | 2003-06-20 | 2006-09-12 | Sandisk Corporation | Self aligned non-volatile memory cell and process for fabrication |
KR100642901B1 (ko) * | 2003-10-22 | 2006-11-03 | 매그나칩 반도체 유한회사 | 비휘발성 메모리 소자의 제조 방법 |
KR100674971B1 (ko) * | 2005-04-27 | 2007-01-26 | 삼성전자주식회사 | U자형 부유 게이트를 가지는 플래시 메모리 제조방법 |
CN101064284A (zh) * | 2006-04-26 | 2007-10-31 | 力晶半导体股份有限公司 | 非易失性存储器的制造方法 |
KR100847833B1 (ko) * | 2006-12-29 | 2008-07-23 | 동부일렉트로닉스 주식회사 | 플래시 기억 장치의 제조 방법 |
CN101320735A (zh) * | 2007-06-08 | 2008-12-10 | 中芯国际集成电路制造(上海)有限公司 | 一种闪速存储器及其制作方法 |
-
2012
- 2012-10-25 CN CN201210413670.7A patent/CN102881693B/zh active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105097475A (zh) * | 2014-05-13 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 栅极结构及其形成方法 |
CN105576016A (zh) * | 2014-10-09 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | 栅极结构、其制作方法及闪存器件 |
CN105576016B (zh) * | 2014-10-09 | 2019-02-12 | 中芯国际集成电路制造(上海)有限公司 | 栅极结构、其制作方法及闪存器件 |
CN105206614A (zh) * | 2015-08-19 | 2015-12-30 | 武汉新芯集成电路制造有限公司 | 浮栅型闪存结构及其制备方法 |
CN108336086A (zh) * | 2017-01-17 | 2018-07-27 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法、电子装置 |
CN108336086B (zh) * | 2017-01-17 | 2021-03-19 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法、电子装置 |
Also Published As
Publication number | Publication date |
---|---|
CN102881693B (zh) | 2017-05-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103545216B (zh) | 沟槽式栅极金氧半场效晶体管的制造方法 | |
JP5984942B2 (ja) | メモリ装置を製造する方法および装置 | |
CN104752361A (zh) | 半导体结构的形成方法 | |
CN104752218A (zh) | 半导体器件的形成方法 | |
JP2018182288A (ja) | メモリ構造及びメモリ構造の製造方法 | |
CN102881693A (zh) | 存储器件及其制作方法 | |
CN111755333A (zh) | 一种纳米片场效应晶体管及其制备方法 | |
CN103258741A (zh) | 纳米线场效应晶体管及其形成方法 | |
CN111341729A (zh) | 半导体装置及其制造方法 | |
CN102945832A (zh) | 闪存器件的形成方法 | |
CN103456787B (zh) | 晶体管元件及其制造方法 | |
US11678477B2 (en) | Semiconductor constructions, and semiconductor processing methods | |
CN104952706A (zh) | 一种半导体器件的制备方法 | |
CN103187449A (zh) | 半导体结构及其形成方法 | |
WO2023130655A1 (zh) | 半导体结构及半导体结构的形成方法 | |
CN105097516A (zh) | 一种FinFET器件及其制造方法、电子装置 | |
CN103367261A (zh) | 半导体结构的形成方法 | |
CN103928292B (zh) | 条形结构的形成方法 | |
CN102709287A (zh) | 非挥发性记忆胞及其制造方法 | |
KR20130023994A (ko) | 반도체 소자 및 이의 제조방법 | |
CN102024820B (zh) | 记忆胞及其制造方法以及记忆体结构 | |
CN105575904A (zh) | 一种半导体器件的制造方法和电子装置 | |
CN105097814A (zh) | 半导体存储器、半导体存储阵列及其操作方法 | |
CN114497041B (zh) | 半导体结构及半导体结构的制作方法 | |
CN105280590A (zh) | 半导体结构及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140423 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140423 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |