CN102859660A - 制造半导体器件的方法 - Google Patents

制造半导体器件的方法 Download PDF

Info

Publication number
CN102859660A
CN102859660A CN2011800188617A CN201180018861A CN102859660A CN 102859660 A CN102859660 A CN 102859660A CN 2011800188617 A CN2011800188617 A CN 2011800188617A CN 201180018861 A CN201180018861 A CN 201180018861A CN 102859660 A CN102859660 A CN 102859660A
Authority
CN
China
Prior art keywords
silicon carbide
laser
semiconductor device
carbide substrate
district
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800188617A
Other languages
English (en)
Chinese (zh)
Inventor
久保田良辅
和田圭司
增田健良
盐见弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN102859660A publication Critical patent/CN102859660A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2011800188617A 2010-12-07 2011-11-07 制造半导体器件的方法 Pending CN102859660A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-272622 2010-12-07
JP2010272622A JP5569376B2 (ja) 2010-12-07 2010-12-07 半導体装置の製造方法
PCT/JP2011/075590 WO2012077443A1 (ja) 2010-12-07 2011-11-07 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CN102859660A true CN102859660A (zh) 2013-01-02

Family

ID=46206945

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800188617A Pending CN102859660A (zh) 2010-12-07 2011-11-07 制造半导体器件的方法

Country Status (8)

Country Link
US (1) US8609521B2 (enExample)
EP (1) EP2650909A1 (enExample)
JP (1) JP5569376B2 (enExample)
KR (1) KR20130135725A (enExample)
CN (1) CN102859660A (enExample)
CA (1) CA2792550A1 (enExample)
TW (1) TW201225162A (enExample)
WO (1) WO2012077443A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113097059A (zh) * 2021-04-07 2021-07-09 芯璨半导体科技(山东)有限公司 一种铝掺杂4h碳化硅的激光热处理方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102740894B (zh) 2009-08-28 2015-07-15 克利夫兰临床医学基金会 用于治疗缺血组织的sdf-1递送
JP5694096B2 (ja) * 2011-09-08 2015-04-01 株式会社東芝 炭化珪素半導体装置の製造方法
US9966339B2 (en) 2014-03-14 2018-05-08 Taiwan Semiconductor Manufacturing Company Barrier structure for copper interconnect
ES2728101T3 (es) * 2014-04-23 2019-10-22 United Silicon Carbide Inc Formación de contactos óhmicos en semiconductores de banda prohibida ancha
US8962468B1 (en) 2014-04-23 2015-02-24 United Silicon Carbide, Inc. Formation of ohmic contacts on wide band gap semiconductors
JP6870286B2 (ja) * 2016-11-15 2021-05-12 富士電機株式会社 炭化珪素半導体装置の製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289550A (ja) * 2001-03-27 2002-10-04 National Institute Of Advanced Industrial & Technology 不純物イオン注入層の活性化法
US6599819B1 (en) * 1999-05-26 2003-07-29 Fujitsu Limited Semiconductor device with source/drain regions of high impurity concentration and its manufacture
JP2005302883A (ja) * 2004-04-08 2005-10-27 Hitachi Ltd 半導体装置の製造方法
CN1864247A (zh) * 2003-10-03 2006-11-15 应用材料股份有限公司 用于动态表面退火工艺的吸收层
JP2006351659A (ja) * 2005-06-14 2006-12-28 Toyota Motor Corp 半導体装置の製造方法
JP2007123300A (ja) * 2005-10-25 2007-05-17 Toyota Motor Corp 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法
CN101256948A (zh) * 2007-02-28 2008-09-03 富士电机电子技术株式会社 半导体元件的制造方法
CN101310388A (zh) * 2005-10-19 2008-11-19 三菱电机株式会社 Mosfet以及mosfet的制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142630A (en) 1980-04-09 1981-11-07 Fujitsu Ltd Manufacture of semiconductor device
EP0971397B1 (en) * 1997-11-28 2003-04-23 Matsushita Electric Industrial Co., Ltd. Method and device for activating semiconductor impurities

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6599819B1 (en) * 1999-05-26 2003-07-29 Fujitsu Limited Semiconductor device with source/drain regions of high impurity concentration and its manufacture
JP2002289550A (ja) * 2001-03-27 2002-10-04 National Institute Of Advanced Industrial & Technology 不純物イオン注入層の活性化法
CN1864247A (zh) * 2003-10-03 2006-11-15 应用材料股份有限公司 用于动态表面退火工艺的吸收层
JP2005302883A (ja) * 2004-04-08 2005-10-27 Hitachi Ltd 半導体装置の製造方法
JP2006351659A (ja) * 2005-06-14 2006-12-28 Toyota Motor Corp 半導体装置の製造方法
CN101310388A (zh) * 2005-10-19 2008-11-19 三菱电机株式会社 Mosfet以及mosfet的制造方法
JP2007123300A (ja) * 2005-10-25 2007-05-17 Toyota Motor Corp 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法
CN101256948A (zh) * 2007-02-28 2008-09-03 富士电机电子技术株式会社 半导体元件的制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113097059A (zh) * 2021-04-07 2021-07-09 芯璨半导体科技(山东)有限公司 一种铝掺杂4h碳化硅的激光热处理方法

Also Published As

Publication number Publication date
JP2012124263A (ja) 2012-06-28
US8609521B2 (en) 2013-12-17
KR20130135725A (ko) 2013-12-11
JP5569376B2 (ja) 2014-08-13
WO2012077443A1 (ja) 2012-06-14
US20130040445A1 (en) 2013-02-14
CA2792550A1 (en) 2012-06-14
WO2012077443A9 (ja) 2012-11-08
EP2650909A1 (en) 2013-10-16
TW201225162A (en) 2012-06-16

Similar Documents

Publication Publication Date Title
CN102859660A (zh) 制造半导体器件的方法
JP5104314B2 (ja) 半導体装置およびその製造方法
JP3213357B2 (ja) シリコンスライス内に白金イオンを導入および拡散する方法
JPH03173442A (ja) 接合形電界効果トランジスタ及び作製方法
KR100766254B1 (ko) 태양전지용 접합층 형성방법
JP2004335815A (ja) 炭化珪素ショットキーバリアダイオードの製造方法
JP2648980B2 (ja) 薄膜トランジスタ作製方法
JP2010073857A (ja) 半導体装置の製造方法
JPS62104021A (ja) シリコン半導体層の形成方法
JP2024528579A (ja) 電子半導体部品の製造方法
CN1134600A (zh) 制造薄膜晶体管的方法及设备
JP4541489B2 (ja) 半導体装置及びその製造方法
CN110364436B (zh) 半导体器件及其形成方法
TW200405478A (en) Method for fabricating semiconductor device
JPH08250749A (ja) 薄膜トランジスタの製造方法及びその製造装置
JPH0434942A (ja) 半導体装置の製造方法
JPH01214172A (ja) 半導体装置の製造方法
JPH03283626A (ja) トランジスタの製造方法
JP5092353B2 (ja) 炭化珪素へのドーピング方法および炭化珪素半導体装置の製造方法
JP2006245567A (ja) 半導体装置の製造方法
KR101348400B1 (ko) 반도체 소자의 게이트 산화막 제조방법
CN113097059A (zh) 一种铝掺杂4h碳化硅的激光热处理方法
CN117936377A (zh) 利用具有厚度选择性的碳膜对SiC器件实现温度与区域可控的激光退火激活方法
JPH01274422A (ja) 半導体基板の熱処理方法
JPH09246184A (ja) 半導体装置の製法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20130102