CA2792550A1 - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

Info

Publication number
CA2792550A1
CA2792550A1 CA2792550A CA2792550A CA2792550A1 CA 2792550 A1 CA2792550 A1 CA 2792550A1 CA 2792550 A CA2792550 A CA 2792550A CA 2792550 A CA2792550 A CA 2792550A CA 2792550 A1 CA2792550 A1 CA 2792550A1
Authority
CA
Canada
Prior art keywords
silicon carbide
region
carbide substrate
laser light
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2792550A
Other languages
English (en)
French (fr)
Inventor
Ryosuke Kubota
Keiji Wada
Takeyoshi Masuda
Hiromu Shiomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CA2792550A1 publication Critical patent/CA2792550A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H10P10/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H10P30/20—
    • H10P30/2042—
    • H10P30/21—
    • H10P34/42—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CA2792550A 2010-12-07 2011-11-07 Method for manufacturing semiconductor device Abandoned CA2792550A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010-272622 2010-12-07
JP2010272622A JP5569376B2 (ja) 2010-12-07 2010-12-07 半導体装置の製造方法
PCT/JP2011/075590 WO2012077443A1 (ja) 2010-12-07 2011-11-07 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
CA2792550A1 true CA2792550A1 (en) 2012-06-14

Family

ID=46206945

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2792550A Abandoned CA2792550A1 (en) 2010-12-07 2011-11-07 Method for manufacturing semiconductor device

Country Status (8)

Country Link
US (1) US8609521B2 (enExample)
EP (1) EP2650909A1 (enExample)
JP (1) JP5569376B2 (enExample)
KR (1) KR20130135725A (enExample)
CN (1) CN102859660A (enExample)
CA (1) CA2792550A1 (enExample)
TW (1) TW201225162A (enExample)
WO (1) WO2012077443A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5856059B2 (ja) 2009-08-28 2016-02-09 ザ クリーブランド クリニック ファウンデーション 虚血組織を治療するためのｓｄｆ−１送達
JP5694096B2 (ja) 2011-09-08 2015-04-01 株式会社東芝 炭化珪素半導体装置の製造方法
US9966339B2 (en) 2014-03-14 2018-05-08 Taiwan Semiconductor Manufacturing Company Barrier structure for copper interconnect
ES2728101T3 (es) * 2014-04-23 2019-10-22 United Silicon Carbide Inc Formación de contactos óhmicos en semiconductores de banda prohibida ancha
US8962468B1 (en) 2014-04-23 2015-02-24 United Silicon Carbide, Inc. Formation of ohmic contacts on wide band gap semiconductors
JP6870286B2 (ja) * 2016-11-15 2021-05-12 富士電機株式会社 炭化珪素半導体装置の製造方法
CN113097059A (zh) * 2021-04-07 2021-07-09 芯璨半导体科技(山东)有限公司 一种铝掺杂4h碳化硅的激光热处理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142630A (en) 1980-04-09 1981-11-07 Fujitsu Ltd Manufacture of semiconductor device
DE69813787T2 (de) * 1997-11-28 2003-10-23 Matsushita Electric Industrial Co., Ltd. Verfahren und vorrichtung zum aktivieren von verunreinigungen in einem halbleiter
JP2000340671A (ja) * 1999-05-26 2000-12-08 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
JP3820424B2 (ja) * 2001-03-27 2006-09-13 独立行政法人産業技術総合研究所 不純物イオン注入層の活性化法
US7109087B2 (en) * 2003-10-03 2006-09-19 Applied Materials, Inc. Absorber layer for DSA processing
JP2005302883A (ja) * 2004-04-08 2005-10-27 Hitachi Ltd 半導体装置の製造方法
JP2006351659A (ja) * 2005-06-14 2006-12-28 Toyota Motor Corp 半導体装置の製造方法
JP5082853B2 (ja) * 2005-10-19 2012-11-28 三菱電機株式会社 Ｍｏｓｆｅｔ
JP2007123300A (ja) * 2005-10-25 2007-05-17 Toyota Motor Corp 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法
DE102008003953A1 (de) * 2007-02-28 2008-09-04 Fuji Electric Device Technology Co. Ltd. Verfahren zur Herstellung eines Halbleiterelements

Also Published As

Publication number Publication date
WO2012077443A9 (ja) 2012-11-08
EP2650909A1 (en) 2013-10-16
JP5569376B2 (ja) 2014-08-13
US8609521B2 (en) 2013-12-17
JP2012124263A (ja) 2012-06-28
WO2012077443A1 (ja) 2012-06-14
KR20130135725A (ko) 2013-12-11
TW201225162A (en) 2012-06-16
CN102859660A (zh) 2013-01-02
US20130040445A1 (en) 2013-02-14

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Legal Events

Date Code Title Description
FZDE Discontinued

Effective date: 20141107