TW201225162A - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor device Download PDFInfo
- Publication number
- TW201225162A TW201225162A TW100141705A TW100141705A TW201225162A TW 201225162 A TW201225162 A TW 201225162A TW 100141705 A TW100141705 A TW 100141705A TW 100141705 A TW100141705 A TW 100141705A TW 201225162 A TW201225162 A TW 201225162A
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- carbide substrate
- laser light
- tantalum carbide
- semiconductor device
- Prior art date
Links
Classifications
-
- H10P10/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H10P30/20—
-
- H10P30/2042—
-
- H10P30/21—
-
- H10P34/42—
Landscapes
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010272622A JP5569376B2 (ja) | 2010-12-07 | 2010-12-07 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201225162A true TW201225162A (en) | 2012-06-16 |
Family
ID=46206945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100141705A TW201225162A (en) | 2010-12-07 | 2011-11-15 | Method for manufacturing semiconductor device |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8609521B2 (enExample) |
| EP (1) | EP2650909A1 (enExample) |
| JP (1) | JP5569376B2 (enExample) |
| KR (1) | KR20130135725A (enExample) |
| CN (1) | CN102859660A (enExample) |
| CA (1) | CA2792550A1 (enExample) |
| TW (1) | TW201225162A (enExample) |
| WO (1) | WO2012077443A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5856059B2 (ja) | 2009-08-28 | 2016-02-09 | ザ クリーブランド クリニック ファウンデーション | 虚血組織を治療するためのｓｄｆ−１送達 |
| JP5694096B2 (ja) | 2011-09-08 | 2015-04-01 | 株式会社東芝 | 炭化珪素半導体装置の製造方法 |
| US9966339B2 (en) | 2014-03-14 | 2018-05-08 | Taiwan Semiconductor Manufacturing Company | Barrier structure for copper interconnect |
| ES2728101T3 (es) * | 2014-04-23 | 2019-10-22 | United Silicon Carbide Inc | Formación de contactos óhmicos en semiconductores de banda prohibida ancha |
| US8962468B1 (en) | 2014-04-23 | 2015-02-24 | United Silicon Carbide, Inc. | Formation of ohmic contacts on wide band gap semiconductors |
| JP6870286B2 (ja) * | 2016-11-15 | 2021-05-12 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
| CN113097059A (zh) * | 2021-04-07 | 2021-07-09 | 芯璨半导体科技(山东)有限公司 | 一种铝掺杂4h碳化硅的激光热处理方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56142630A (en) | 1980-04-09 | 1981-11-07 | Fujitsu Ltd | Manufacture of semiconductor device |
| DE69813787T2 (de) * | 1997-11-28 | 2003-10-23 | Matsushita Electric Industrial Co., Ltd. | Verfahren und vorrichtung zum aktivieren von verunreinigungen in einem halbleiter |
| JP2000340671A (ja) * | 1999-05-26 | 2000-12-08 | Fujitsu Ltd | 半導体装置の製造方法及び半導体装置 |
| JP3820424B2 (ja) * | 2001-03-27 | 2006-09-13 | 独立行政法人産業技術総合研究所 | 不純物イオン注入層の活性化法 |
| US7109087B2 (en) * | 2003-10-03 | 2006-09-19 | Applied Materials, Inc. | Absorber layer for DSA processing |
| JP2005302883A (ja) * | 2004-04-08 | 2005-10-27 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2006351659A (ja) * | 2005-06-14 | 2006-12-28 | Toyota Motor Corp | 半導体装置の製造方法 |
| JP5082853B2 (ja) * | 2005-10-19 | 2012-11-28 | 三菱電機株式会社 | Ｍｏｓｆｅｔ |
| JP2007123300A (ja) * | 2005-10-25 | 2007-05-17 | Toyota Motor Corp | 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法 |
| DE102008003953A1 (de) * | 2007-02-28 | 2008-09-04 | Fuji Electric Device Technology Co. Ltd. | Verfahren zur Herstellung eines Halbleiterelements |
-
2010
- 2010-12-07 JP JP2010272622A patent/JP5569376B2/ja not_active Expired - Fee Related
-
2011
- 2011-11-07 CN CN2011800188617A patent/CN102859660A/zh active Pending
- 2011-11-07 EP EP11846625.9A patent/EP2650909A1/en not_active Withdrawn
- 2011-11-07 WO PCT/JP2011/075590 patent/WO2012077443A1/ja not_active Ceased
- 2011-11-07 CA CA2792550A patent/CA2792550A1/en not_active Abandoned
- 2011-11-07 US US13/583,564 patent/US8609521B2/en not_active Expired - Fee Related
- 2011-11-07 KR KR1020127024090A patent/KR20130135725A/ko not_active Withdrawn
- 2011-11-15 TW TW100141705A patent/TW201225162A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012077443A9 (ja) | 2012-11-08 |
| EP2650909A1 (en) | 2013-10-16 |
| CA2792550A1 (en) | 2012-06-14 |
| JP5569376B2 (ja) | 2014-08-13 |
| US8609521B2 (en) | 2013-12-17 |
| JP2012124263A (ja) | 2012-06-28 |
| WO2012077443A1 (ja) | 2012-06-14 |
| KR20130135725A (ko) | 2013-12-11 |
| CN102859660A (zh) | 2013-01-02 |
| US20130040445A1 (en) | 2013-02-14 |
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