KR20130135725A - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR20130135725A
KR20130135725A KR1020127024090A KR20127024090A KR20130135725A KR 20130135725 A KR20130135725 A KR 20130135725A KR 1020127024090 A KR1020127024090 A KR 1020127024090A KR 20127024090 A KR20127024090 A KR 20127024090A KR 20130135725 A KR20130135725 A KR 20130135725A
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KR
South Korea
Prior art keywords
silicon carbide
region
carbide substrate
laser light
annealing
Prior art date
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Withdrawn
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KR1020127024090A
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English (en)
Korean (ko)
Inventor
료스케 구보타
게이지 와다
다케요시 마스다
히로무 시오미
Original Assignee
스미토모덴키고교가부시키가이샤
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Publication of KR20130135725A publication Critical patent/KR20130135725A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H10P30/2042—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors into crystalline silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020127024090A 2010-12-07 2011-11-07 반도체 장치의 제조 방법 Withdrawn KR20130135725A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-272622 2010-12-07
JP2010272622A JP5569376B2 (ja) 2010-12-07 2010-12-07 半導体装置の製造方法
PCT/JP2011/075590 WO2012077443A1 (ja) 2010-12-07 2011-11-07 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR20130135725A true KR20130135725A (ko) 2013-12-11

Family

ID=46206945

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127024090A Withdrawn KR20130135725A (ko) 2010-12-07 2011-11-07 반도체 장치의 제조 방법

Country Status (8)

Country Link
US (1) US8609521B2 (enExample)
EP (1) EP2650909A1 (enExample)
JP (1) JP5569376B2 (enExample)
KR (1) KR20130135725A (enExample)
CN (1) CN102859660A (enExample)
CA (1) CA2792550A1 (enExample)
TW (1) TW201225162A (enExample)
WO (1) WO2012077443A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102740894B (zh) 2009-08-28 2015-07-15 克利夫兰临床医学基金会 用于治疗缺血组织的sdf-1递送
JP5694096B2 (ja) * 2011-09-08 2015-04-01 株式会社東芝 炭化珪素半導体装置の製造方法
US9966339B2 (en) 2014-03-14 2018-05-08 Taiwan Semiconductor Manufacturing Company Barrier structure for copper interconnect
ES2728101T3 (es) * 2014-04-23 2019-10-22 United Silicon Carbide Inc Formación de contactos óhmicos en semiconductores de banda prohibida ancha
US8962468B1 (en) 2014-04-23 2015-02-24 United Silicon Carbide, Inc. Formation of ohmic contacts on wide band gap semiconductors
JP6870286B2 (ja) * 2016-11-15 2021-05-12 富士電機株式会社 炭化珪素半導体装置の製造方法
CN113097059A (zh) * 2021-04-07 2021-07-09 芯璨半导体科技(山东)有限公司 一种铝掺杂4h碳化硅的激光热处理方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56142630A (en) 1980-04-09 1981-11-07 Fujitsu Ltd Manufacture of semiconductor device
EP0971397B1 (en) * 1997-11-28 2003-04-23 Matsushita Electric Industrial Co., Ltd. Method and device for activating semiconductor impurities
JP2000340671A (ja) * 1999-05-26 2000-12-08 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
JP3820424B2 (ja) * 2001-03-27 2006-09-13 独立行政法人産業技術総合研究所 不純物イオン注入層の活性化法
US7109087B2 (en) * 2003-10-03 2006-09-19 Applied Materials, Inc. Absorber layer for DSA processing
JP2005302883A (ja) * 2004-04-08 2005-10-27 Hitachi Ltd 半導体装置の製造方法
JP2006351659A (ja) * 2005-06-14 2006-12-28 Toyota Motor Corp 半導体装置の製造方法
CN100593243C (zh) * 2005-10-19 2010-03-03 三菱电机株式会社 Mosfet以及mosfet的制造方法
JP2007123300A (ja) * 2005-10-25 2007-05-17 Toyota Motor Corp 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法
DE102008003953A1 (de) 2007-02-28 2008-09-04 Fuji Electric Device Technology Co. Ltd. Verfahren zur Herstellung eines Halbleiterelements

Also Published As

Publication number Publication date
JP2012124263A (ja) 2012-06-28
US8609521B2 (en) 2013-12-17
JP5569376B2 (ja) 2014-08-13
CN102859660A (zh) 2013-01-02
WO2012077443A1 (ja) 2012-06-14
US20130040445A1 (en) 2013-02-14
CA2792550A1 (en) 2012-06-14
WO2012077443A9 (ja) 2012-11-08
EP2650909A1 (en) 2013-10-16
TW201225162A (en) 2012-06-16

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