CN102844874B8 - 场效应晶体管、显示元件、图像显示设备和系统 - Google Patents
场效应晶体管、显示元件、图像显示设备和系统 Download PDFInfo
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- CN102844874B8 CN102844874B8 CN201180019311.7A CN201180019311A CN102844874B8 CN 102844874 B8 CN102844874 B8 CN 102844874B8 CN 201180019311 A CN201180019311 A CN 201180019311A CN 102844874 B8 CN102844874 B8 CN 102844874B8
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- effect transistor
- active layer
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- 230000005669 field effect Effects 0.000 title abstract 2
- 150000001768 cations Chemical class 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610525944.XA CN106098787B (zh) | 2010-02-16 | 2011-02-15 | 场效应晶体管、显示元件、图像显示设备和系统 |
CN201510004823.6A CN104617150B (zh) | 2010-02-16 | 2011-02-15 | 场效应晶体管、显示元件、图像显示设备和系统 |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010-031610 | 2010-02-16 | ||
JP2010031610 | 2010-02-16 | ||
JP2010-021155 | 2010-09-01 | ||
JP2011-021155 | 2011-02-02 | ||
JP2011021155A JP5776192B2 (ja) | 2010-02-16 | 2011-02-02 | 電界効果型トランジスタ、表示素子、画像表示装置及びシステム |
PCT/JP2011/053603 WO2011102500A1 (en) | 2010-02-16 | 2011-02-15 | Field effect transistor, display element, image display device, and system |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610525944.XA Division CN106098787B (zh) | 2010-02-16 | 2011-02-15 | 场效应晶体管、显示元件、图像显示设备和系统 |
CN201510004823.6A Division CN104617150B (zh) | 2010-02-16 | 2011-02-15 | 场效应晶体管、显示元件、图像显示设备和系统 |
Publications (3)
Publication Number | Publication Date |
---|---|
CN102844874A CN102844874A (zh) | 2012-12-26 |
CN102844874B CN102844874B (zh) | 2016-08-03 |
CN102844874B8 true CN102844874B8 (zh) | 2018-01-09 |
Family
ID=44483084
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610525944.XA Expired - Fee Related CN106098787B (zh) | 2010-02-16 | 2011-02-15 | 场效应晶体管、显示元件、图像显示设备和系统 |
CN201180019311.7A Expired - Fee Related CN102844874B8 (zh) | 2010-02-16 | 2011-02-15 | 场效应晶体管、显示元件、图像显示设备和系统 |
CN201510004823.6A Expired - Fee Related CN104617150B (zh) | 2010-02-16 | 2011-02-15 | 场效应晶体管、显示元件、图像显示设备和系统 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610525944.XA Expired - Fee Related CN106098787B (zh) | 2010-02-16 | 2011-02-15 | 场效应晶体管、显示元件、图像显示设备和系统 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510004823.6A Expired - Fee Related CN104617150B (zh) | 2010-02-16 | 2011-02-15 | 场效应晶体管、显示元件、图像显示设备和系统 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9105473B2 (zh) |
EP (1) | EP2537185A4 (zh) |
JP (1) | JP5776192B2 (zh) |
KR (2) | KR101435304B1 (zh) |
CN (3) | CN106098787B (zh) |
TW (1) | TWI501402B (zh) |
WO (1) | WO2011102500A1 (zh) |
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JP5776192B2 (ja) * | 2010-02-16 | 2015-09-09 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置及びシステム |
KR101891650B1 (ko) * | 2011-09-22 | 2018-08-27 | 삼성디스플레이 주식회사 | 산화물 반도체, 이를 포함하는 박막 트랜지스터, 및 박막 트랜지스터 표시판 |
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JP6076626B2 (ja) * | 2012-06-14 | 2017-02-08 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
JP6284710B2 (ja) * | 2012-10-18 | 2018-02-28 | 出光興産株式会社 | スパッタリングターゲット、酸化物半導体薄膜及びそれらの製造方法 |
WO2014073213A1 (ja) * | 2012-11-08 | 2014-05-15 | 出光興産株式会社 | スパッタリングターゲット |
TWI618252B (zh) * | 2013-02-12 | 2018-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
US9012261B2 (en) * | 2013-03-13 | 2015-04-21 | Intermolecular, Inc. | High productivity combinatorial screening for stable metal oxide TFTs |
US9577107B2 (en) * | 2013-03-19 | 2017-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and method for forming oxide semiconductor film |
JP6421446B2 (ja) | 2013-06-28 | 2018-11-14 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置及びシステム |
JP6662432B2 (ja) * | 2013-06-28 | 2020-03-11 | 株式会社リコー | 電界効果型トランジスタ、表示素子、画像表示装置及びシステム |
US20150177311A1 (en) * | 2013-12-19 | 2015-06-25 | Intermolecular, Inc. | Methods and Systems for Evaluating IGZO with Respect to NBIS |
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JP6828293B2 (ja) | 2015-09-15 | 2021-02-10 | 株式会社リコー | n型酸化物半導体膜形成用塗布液、n型酸化物半導体膜の製造方法、及び電界効果型トランジスタの製造方法 |
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KR102260807B1 (ko) | 2016-11-30 | 2021-06-07 | 가부시키가이샤 리코 | 산화물 또는 산질화물 절연체 막 형성용 도포액, 산화물 또는 산질화물 절연체 막, 전계 효과형 트랜지스터 및 이들의 제조 방법 |
JP2018157206A (ja) * | 2017-03-17 | 2018-10-04 | 株式会社リコー | 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム |
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TW201138119A (en) | 2011-11-01 |
TWI501402B (zh) | 2015-09-21 |
KR20120106896A (ko) | 2012-09-26 |
KR101435304B1 (ko) | 2014-08-27 |
WO2011102500A1 (en) | 2011-08-25 |
US9105473B2 (en) | 2015-08-11 |
CN106098787B (zh) | 2021-08-31 |
KR20140081900A (ko) | 2014-07-01 |
CN102844874B (zh) | 2016-08-03 |
JP2011192971A (ja) | 2011-09-29 |
EP2537185A4 (en) | 2017-08-23 |
CN104617150B (zh) | 2020-01-24 |
CN106098787A (zh) | 2016-11-09 |
KR101514192B1 (ko) | 2015-04-21 |
CN102844874A (zh) | 2012-12-26 |
US20120306834A1 (en) | 2012-12-06 |
CN104617150A (zh) | 2015-05-13 |
JP5776192B2 (ja) | 2015-09-09 |
EP2537185A1 (en) | 2012-12-26 |
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