CN102812546B - 制造双面装备有芯片的晶片的方法 - Google Patents

制造双面装备有芯片的晶片的方法 Download PDF

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Publication number
CN102812546B
CN102812546B CN201080065914.6A CN201080065914A CN102812546B CN 102812546 B CN102812546 B CN 102812546B CN 201080065914 A CN201080065914 A CN 201080065914A CN 102812546 B CN102812546 B CN 102812546B
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wafer
layer
intermediate layer
adhesion
adhesive layer
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Chinese (zh)
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CN102812546A (zh
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J.布格拉夫
M.温普林格
H.韦斯鲍尔
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EV Group E Thallner GmbH
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EV Group E Thallner GmbH
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    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
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    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
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