JP2013524493A - 二面上にチップを備えたウェハを製造するための方法 - Google Patents
二面上にチップを備えたウェハを製造するための方法 Download PDFInfo
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- JP2013524493A JP2013524493A JP2013501635A JP2013501635A JP2013524493A JP 2013524493 A JP2013524493 A JP 2013524493A JP 2013501635 A JP2013501635 A JP 2013501635A JP 2013501635 A JP2013501635 A JP 2013501635A JP 2013524493 A JP2013524493 A JP 2013524493A
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- wafer
- adhesive layer
- intermediate layer
- carrier wafer
- layer
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- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
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Abstract
Description
− 中間層の異なる接着材料、
− 下記を用いて(全体的にまたは部分的に)少なくとも1つの表面/接触表面の異なる前処理、
− 接着低下基板、
− 接着促進基板、
− 中間層の異なるサイズの接触表面または厚さ。
− 特に一方の中間層を照射しつつ、他方の中間層が照射されないまたは部分的にだけ照射されることによる、制御された局所的な作用。制御された局所的な作用は、一方の中間層上にだけ溶媒を作用させつつ、他方の中間層を溶媒に曝さないまたは部分的にだけ曝すことによって、本発明の別の1つの構成において可能である。
− 特に温度の上昇によって他方の中間層の変化を引き起こす適用した方法ステップに対して材料選択による選択性および一方の中間層の少なくとも部分的に不活性な挙動であり、そこでは、2つの中間層のうちの一方が、粘性を大きく明らかに低下させない状態で反応し、その結果として、この中間層がせん断力に抗してより強いボンディング力を有する。2つの中間層のうちの一方を1つの溶媒に対して不活性な反応性にさせると同時に、この溶媒が他方の中間層を溶解することが、ここでは特に好ましい。
− 第2の中間層を付ける前に第1の中間層上の作用による第1の中間層の接着力の変化。
− 第1の層の接着力の変化が、上に説明した手段によって第2の層の接着力の変化よりもさらに顕著であるように、最初から異なる大きさである端部接着ゾーンのリング幅による選択性。
− 少なくとも端部側上に付けられた1つの第1の接着層からなる第1の中間層18を用いて第1の堅いキャリアウェハ8上に、第1の面3でプロダクトウェハ1をボンディングするステップと、
− 第1の接着層6を少なくとも部分的に溶解するステップと、
− 少なくとも端部側上に付けられた1つの第2の接着層14からなる第2の中間層17を用いて第2の堅いキャリアウェハ13上に、第2の面2でプロダクトウェハ1をボンディングするステップと、
− 特に、プロダクトウェハ1に平行であって、第1のキャリアウェハ8および第2のキャリアウェハ13に反対向きに作用するせん断力を加えることによって、または第1のキャリアウェハ8を剥離することによって第1のキャリアウェハを分離するステップ。
2 第2の面
3 第1の面
4 バンプ
5 バンプのグループ
6 第1の接着層
7 膜
8 第1のキャリアウェハ
9 VIA
10 バンプ
11 バンプのグループ
12 チップ
13 第2のキャリアウェハ
14 第2の接着層
15 チップ
16 二面上に形成したプロダクトウェハ
17、17’、17” 第2の中間層
18、18’、18” 第1の中間層
19 ウェハ周辺部
29 光源
D 直径
H1 ウェハ厚さ
H2 ウェハ厚さ
R1、R1’ リング幅
R2、R2’ リング幅
B1 中間層の厚さ
B2 中間層の厚さ
Claims (11)
- 特に両面上にチップ(12、15)が設けられているプロダクトウェハ(1)を製造するための方法であって、前記方法が、
前記プロダクトウェハ(1)の第1の面(3)を処理するステップと、
少なくとも端部側上に付けられた1つの第1の接着層(6)からなる第1の中間層(18、18’、18”)を用いて第1の堅いキャリアウェハ(8)上に、前記第1の面(3)で前記プロダクトウェハ(1)をボンディングするステップと、
前記第1の面(3)とは反対側の前記プロダクトウェハ(1)の第2の面(2)を処理するステップと、
少なくとも前記端部側上に付けられた1つの第2の接着層(14)からなる第2の中間層(17、17’、17”)を用いて第2の堅いキャリアウェハ(13)上に、前記第2の面(2)で前記プロダクトウェハ(1)をボンディングするステップと、で進行し、前記第1のキャリアウェハ(8)が前記第2のキャリアウェハ(13)の前に選択的に分離されうるように、前記第1の中間層(18、18’、18”)および前記第2の中間層(17、17’、17”)が異なるように作られることを特徴とする方法。 - 前記第1の接着層(6)のボンディング力が前記第2の接着層(14)のボンディング力よりも小さい、請求項1に記載の方法。
- 前記第1の接着層(6)が、前記第2の接着層(14)よりも小さな寸法、特に前記第1のキャリアウェハ(8)および前記プロダクトウェハ(1)と前記第1の接着層(6)との小さな接触面積および/または薄い層厚さを有する、請求項1または2のいずれか一項に記載の方法。
- 前記第1の接着層(6)が第1の溶媒によって少なくとも部分的に溶解され、一方で前記第2の接着層(14)が前記第1の溶媒に関して少なくともほとんど不活性であるように、前記第1の接着層(6)が、前記第2の接着層(14)とは異なる化学的な特性を有する、請求項1から3のいずれか一項に記載の方法。
- 前記第1のキャリアウェハ(8)の前記分離が前記第2のキャリアウェハ(13)の分離の前に生じうるように、温度の上昇とともに前記第1の中間層(18、18’、18”)が少なくとも部分的に溶解するように、前記第1の中間層(18、18’、18”)は、前記第2の中間層(17、17’、17”)とは異なる熱的な特性を有する、請求項1から4のいずれか一項に記載の方法。
- 前記第1の中間層(18、18’、18”)の、特に前記第2の接着層(14)の前記溶解が、前記第2の面(2)を処理した後で、前記第2のキャリアウェハ(13)へ前記プロダクトウェハ(1)をボンディングする前または後に生じる、請求項4または5に記載の方法。
- 前記プロダクトウェハ(1)からの前記第1のキャリアウェハ(8)の前記分離が、特に、好ましくは選択的に前記第1の接着層(6)および/または前記第2の接着層(14)上に作用する光源(29)の所定の光源[sic]長さおよび/または所定の光強度の作用に関連して、前記第1の中間層(18、18’、18”)および前記第2の中間層(17、17’、17”)の異なる光学的な特性の結果として選択的に生じる、請求項1から6のいずれか一項に記載の方法。
- 前記プロダクトウェハ(1)からの前記第1のキャリアウェハ(8)の前記分離が、特にせん断強度、好ましくは前記温度に応じた前記せん断強度に関連して、前記第1の中間層(18、18’、18”)および前記第2の中間層(17、17’、17”)の異なる機械的な特性の結果として選択的に生じる、請求項1から7のいずれか一項に記載の方法。
- 前記第1の接着層(6)および/または前記第2の接着層(14)が、特に前記プロダクトウェハ(1)の周辺部(19)の領域内に環状に作られる、請求項1から8のいずれか一項に記載の方法。
- 前記第1の接着層(6)内の前記第1の中間層(18、18”)および/または前記第2の接着層(14)内の前記第2の中間層(17、17”)が、膜(7)を含む、請求項1から9のいずれか一項に記載の方法。
- 前記第1のキャリアウェハ(8)と前記第1の中間層(18、18’、18”)との間に、特に前記第1のキャリアウェハ(8)上に付けられた第1の部分コーティングが、前記第1の部分コーティングの領域内の前記ボンディング力/接着力を低下させるために付けられ、および/または前記第2のキャリアウェハ(13)と前記第2の中間層(17、17’、17”)との間に、特に前記第2のキャリアウェハ(13)上に付けられた第2の部分コーティングが、前記第2の部分コーティングの領域内の前記ボンディング力/接着力を低下させるために付けられる、請求項1から10のいずれか一項に記載の方法。
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Publication number | Publication date |
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US9224630B2 (en) | 2015-12-29 |
EP2553719A1 (de) | 2013-02-06 |
KR101856429B1 (ko) | 2018-05-09 |
TW201145370A (en) | 2011-12-16 |
SG183820A1 (en) | 2012-10-30 |
JP5763169B2 (ja) | 2015-08-12 |
EP2553719B1 (de) | 2019-12-04 |
KR20130040779A (ko) | 2013-04-24 |
US20130011997A1 (en) | 2013-01-10 |
CN102812546A (zh) | 2012-12-05 |
CN102812546B (zh) | 2015-08-26 |
WO2011120537A1 (de) | 2011-10-06 |
KR20170042817A (ko) | 2017-04-19 |
TWI518758B (zh) | 2016-01-21 |
KR20160075845A (ko) | 2016-06-29 |
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