CN102760718A - 半导体装置、显示装置和电子设备 - Google Patents
半导体装置、显示装置和电子设备 Download PDFInfo
- Publication number
- CN102760718A CN102760718A CN2012101118374A CN201210111837A CN102760718A CN 102760718 A CN102760718 A CN 102760718A CN 2012101118374 A CN2012101118374 A CN 2012101118374A CN 201210111837 A CN201210111837 A CN 201210111837A CN 102760718 A CN102760718 A CN 102760718A
- Authority
- CN
- China
- Prior art keywords
- wiring portion
- wiring
- semiconductor device
- display unit
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 239000000758 substrate Substances 0.000 claims description 33
- 239000004973 liquid crystal related substance Substances 0.000 claims description 19
- 210000002858 crystal cell Anatomy 0.000 claims description 7
- 238000005224 laser annealing Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 25
- 210000004027 cell Anatomy 0.000 description 21
- 238000001514 detection method Methods 0.000 description 20
- 238000012360 testing method Methods 0.000 description 17
- 230000006866 deterioration Effects 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000006681 Combes synthesis reaction Methods 0.000 description 6
- 230000001629 suppression Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000006066 Comins reaction Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/033—Pointing devices displaced or positioned by the user, e.g. mice, trackballs, pens or joysticks; Accessories therefor
- G06F3/038—Control and interface arrangements therefor, e.g. drivers or device-embedded control circuitry
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/045—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Human Computer Interaction (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal Display Device Control (AREA)
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610213496.XA CN105720037B (zh) | 2011-04-27 | 2012-04-16 | 半导体装置和显示装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011099345A JP5581261B2 (ja) | 2011-04-27 | 2011-04-27 | 半導体装置、表示装置および電子機器 |
JP2011-099345 | 2011-04-27 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610213496.XA Division CN105720037B (zh) | 2011-04-27 | 2012-04-16 | 半导体装置和显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102760718A true CN102760718A (zh) | 2012-10-31 |
CN102760718B CN102760718B (zh) | 2016-05-04 |
Family
ID=47055113
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610213496.XA Expired - Fee Related CN105720037B (zh) | 2011-04-27 | 2012-04-16 | 半导体装置和显示装置 |
CN201210111837.4A Expired - Fee Related CN102760718B (zh) | 2011-04-27 | 2012-04-16 | 半导体装置、显示装置和电子设备 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610213496.XA Expired - Fee Related CN105720037B (zh) | 2011-04-27 | 2012-04-16 | 半导体装置和显示装置 |
Country Status (5)
Country | Link |
---|---|
US (5) | US8884919B2 (zh) |
JP (1) | JP5581261B2 (zh) |
KR (1) | KR101919155B1 (zh) |
CN (2) | CN105720037B (zh) |
TW (1) | TWI470306B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104252070A (zh) * | 2013-06-28 | 2014-12-31 | 乐金显示有限公司 | 显示设备及其驱动方法 |
CN106298642A (zh) * | 2015-06-29 | 2017-01-04 | 三星电子株式会社 | 布线结构及其形成方法和包括该布线结构的半导体器件 |
CN106338867A (zh) * | 2016-10-31 | 2017-01-18 | 昆山龙腾光电有限公司 | Vcom走线结构、显示面板及vcom走线结构制作方法 |
CN110268376A (zh) * | 2019-04-30 | 2019-09-20 | 京东方科技集团股份有限公司 | 驱动方法、驱动电路及触摸显示装置 |
CN110928447A (zh) * | 2016-07-29 | 2020-03-27 | 三星显示有限公司 | 显示装置 |
US11955060B2 (en) | 2021-05-21 | 2024-04-09 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display substrate and display device |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5581261B2 (ja) | 2011-04-27 | 2014-08-27 | 株式会社ジャパンディスプレイ | 半導体装置、表示装置および電子機器 |
JP6032975B2 (ja) * | 2012-07-02 | 2016-11-30 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
WO2014045603A1 (ja) * | 2012-09-24 | 2014-03-27 | パナソニック株式会社 | 入力装置 |
US9746706B2 (en) | 2012-10-26 | 2017-08-29 | Japan Display Inc. | Display device and electronic apparatus |
CN103034365B (zh) * | 2012-12-13 | 2016-03-09 | 北京京东方光电科技有限公司 | 触控显示电路结构及其驱动方法、阵列基板和显示装置 |
US9639193B2 (en) | 2013-04-25 | 2017-05-02 | Beijing Boe Optoelectronics Technology Co., Ltd. | Touch-control pixel driving circuit, touch-control pixel driving method, array substrate and liquid crystal display (LCD) device |
US9395072B2 (en) * | 2013-11-13 | 2016-07-19 | Industrial Technology Research Institute | Illumination device |
JP6162585B2 (ja) | 2013-11-22 | 2017-07-12 | 株式会社ジャパンディスプレイ | タッチ検出機能付き表示装置 |
JP6205261B2 (ja) * | 2013-12-13 | 2017-09-27 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6302741B2 (ja) * | 2013-12-19 | 2018-03-28 | 株式会社ジャパンディスプレイ | 表示装置 |
JP2016122122A (ja) * | 2014-12-25 | 2016-07-07 | 株式会社ジャパンディスプレイ | 表示装置 |
CN104505014B (zh) * | 2014-12-31 | 2017-02-22 | 厦门天马微电子有限公司 | 一种驱动电路、阵列基板和触控显示装置及其驱动方法 |
JP2017122770A (ja) * | 2016-01-05 | 2017-07-13 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
JP6710531B2 (ja) * | 2016-02-03 | 2020-06-17 | 株式会社ジャパンディスプレイ | センサ付き表示装置及びセンサ装置 |
CN105677126B (zh) * | 2016-02-04 | 2020-03-27 | 上海天马微电子有限公司 | 一种显示面板和显示装置 |
JP6705687B2 (ja) * | 2016-04-04 | 2020-06-03 | 株式会社ジャパンディスプレイ | 表示装置 |
WO2018073690A1 (en) * | 2016-10-21 | 2018-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Touch sensor, display device, display module, and electronic device |
CN107527925B (zh) * | 2017-08-25 | 2019-11-05 | 京东方科技集团股份有限公司 | 显示基板及其制造方法、显示面板、显示装置 |
WO2019069696A1 (ja) * | 2017-10-03 | 2019-04-11 | 株式会社ワコム | ペンが送信したペン信号を検出するためのセンサパネル |
US20200219455A1 (en) * | 2019-01-03 | 2020-07-09 | Innolux Corporation | Display device |
JP2021096430A (ja) * | 2019-12-19 | 2021-06-24 | 株式会社ジャパンディスプレイ | 表示装置 |
JP7148008B2 (ja) | 2021-11-26 | 2022-10-05 | セイコーエプソン株式会社 | 電気光学装置、電子機器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0997909A (ja) * | 1995-09-28 | 1997-04-08 | Sharp Corp | 液晶表示装置 |
JP2000310964A (ja) * | 1999-02-23 | 2000-11-07 | Seiko Epson Corp | 電気光学装置の駆動回路及び電気光学装置並びに電子機器 |
JP2003337545A (ja) * | 1999-02-23 | 2003-11-28 | Seiko Epson Corp | 電気光学装置の駆動回路及び電気光学装置並びに電子機器 |
JP2006337710A (ja) * | 2005-06-02 | 2006-12-14 | Sharp Corp | アクティブマトリクス基板およびそれを用いた表示装置 |
CN101027841A (zh) * | 2004-09-29 | 2007-08-29 | 罗姆股份有限公司 | D/a转换电路、显示面板驱动电路以及显示装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11214700A (ja) * | 1998-01-23 | 1999-08-06 | Semiconductor Energy Lab Co Ltd | 半導体表示装置 |
JPH11338439A (ja) * | 1998-03-27 | 1999-12-10 | Semiconductor Energy Lab Co Ltd | 半導体表示装置の駆動回路および半導体表示装置 |
JP2000310963A (ja) * | 1999-02-23 | 2000-11-07 | Seiko Epson Corp | 電気光学装置の駆動回路及び電気光学装置並びに電子機器 |
JP4662647B2 (ja) * | 2001-03-30 | 2011-03-30 | シャープ株式会社 | 表示装置及びその製造方法 |
JP4785271B2 (ja) * | 2001-04-27 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 液晶表示装置、電子機器 |
KR100763171B1 (ko) * | 2001-11-07 | 2007-10-08 | 엘지.필립스 엘시디 주식회사 | 액티브 매트릭스 유기전계발광소자 및 그 제조방법 |
KR100642491B1 (ko) * | 2003-12-26 | 2006-11-02 | 엘지.필립스 엘시디 주식회사 | 유기전계발광 소자 |
JP4241781B2 (ja) * | 2006-08-10 | 2009-03-18 | エプソンイメージングデバイス株式会社 | 電気光学装置、駆動回路および電子機器 |
JP4254824B2 (ja) * | 2006-09-01 | 2009-04-15 | エプソンイメージングデバイス株式会社 | 電気光学装置、駆動回路および電子機器 |
JP2009169043A (ja) | 2008-01-16 | 2009-07-30 | Seiko Epson Corp | バッファ回路、電気光学装置、および電子機器 |
JP5183584B2 (ja) * | 2009-06-29 | 2013-04-17 | 株式会社ジャパンディスプレイウェスト | タッチセンサ、表示装置および電子機器 |
TWI413441B (zh) * | 2009-12-29 | 2013-10-21 | Au Optronics Corp | 畫素結構及電致發光裝置 |
JP5581261B2 (ja) * | 2011-04-27 | 2014-08-27 | 株式会社ジャパンディスプレイ | 半導体装置、表示装置および電子機器 |
US9222808B2 (en) | 2011-06-09 | 2015-12-29 | Kodenshi Corporation | Scale for rotary encoder, method of injection-molding same, and rotary encoder using same |
-
2011
- 2011-04-27 JP JP2011099345A patent/JP5581261B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-29 TW TW101111180A patent/TWI470306B/zh not_active IP Right Cessation
- 2012-04-16 CN CN201610213496.XA patent/CN105720037B/zh not_active Expired - Fee Related
- 2012-04-16 CN CN201210111837.4A patent/CN102760718B/zh not_active Expired - Fee Related
- 2012-04-18 KR KR1020120040042A patent/KR101919155B1/ko active IP Right Grant
- 2012-04-18 US US13/449,442 patent/US8884919B2/en active Active
-
2014
- 2014-10-15 US US14/514,798 patent/US9111808B2/en not_active Expired - Fee Related
-
2015
- 2015-07-07 US US14/793,477 patent/US9721975B2/en active Active
-
2017
- 2017-06-28 US US15/635,383 patent/US10714505B2/en active Active
-
2020
- 2020-05-28 US US16/885,419 patent/US10998347B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0997909A (ja) * | 1995-09-28 | 1997-04-08 | Sharp Corp | 液晶表示装置 |
JP2000310964A (ja) * | 1999-02-23 | 2000-11-07 | Seiko Epson Corp | 電気光学装置の駆動回路及び電気光学装置並びに電子機器 |
JP2003337545A (ja) * | 1999-02-23 | 2003-11-28 | Seiko Epson Corp | 電気光学装置の駆動回路及び電気光学装置並びに電子機器 |
CN101027841A (zh) * | 2004-09-29 | 2007-08-29 | 罗姆股份有限公司 | D/a转换电路、显示面板驱动电路以及显示装置 |
JP2006337710A (ja) * | 2005-06-02 | 2006-12-14 | Sharp Corp | アクティブマトリクス基板およびそれを用いた表示装置 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104252070B (zh) * | 2013-06-28 | 2017-06-06 | 乐金显示有限公司 | 显示设备及其驱动方法 |
CN104252070A (zh) * | 2013-06-28 | 2014-12-31 | 乐金显示有限公司 | 显示设备及其驱动方法 |
CN106298642A (zh) * | 2015-06-29 | 2017-01-04 | 三星电子株式会社 | 布线结构及其形成方法和包括该布线结构的半导体器件 |
CN106298642B (zh) * | 2015-06-29 | 2019-05-28 | 三星电子株式会社 | 布线结构及其形成方法和包括该布线结构的半导体器件 |
CN110928447B (zh) * | 2016-07-29 | 2023-10-03 | 三星显示有限公司 | 显示装置 |
CN110928447A (zh) * | 2016-07-29 | 2020-03-27 | 三星显示有限公司 | 显示装置 |
CN106338867A (zh) * | 2016-10-31 | 2017-01-18 | 昆山龙腾光电有限公司 | Vcom走线结构、显示面板及vcom走线结构制作方法 |
CN106338867B (zh) * | 2016-10-31 | 2019-04-05 | 昆山龙腾光电有限公司 | Vcom走线结构、显示面板及vcom走线结构制作方法 |
CN110268376A (zh) * | 2019-04-30 | 2019-09-20 | 京东方科技集团股份有限公司 | 驱动方法、驱动电路及触摸显示装置 |
US11543911B2 (en) | 2019-04-30 | 2023-01-03 | Beijing Boe Display Technology Co., Ltd. | Driving method, driving circuit and touch-display apparatus |
CN110268376B (zh) * | 2019-04-30 | 2023-06-30 | 京东方科技集团股份有限公司 | 驱动方法、驱动电路及触摸显示装置 |
WO2020220259A1 (zh) * | 2019-04-30 | 2020-11-05 | 京东方科技集团股份有限公司 | 驱动方法、驱动电路及触摸显示装置 |
US11955060B2 (en) | 2021-05-21 | 2024-04-09 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display substrate and display device |
Also Published As
Publication number | Publication date |
---|---|
TWI470306B (zh) | 2015-01-21 |
KR20120121835A (ko) | 2012-11-06 |
CN105720037A (zh) | 2016-06-29 |
US10998347B2 (en) | 2021-05-04 |
KR101919155B1 (ko) | 2018-11-15 |
US8884919B2 (en) | 2014-11-11 |
TW201303425A (zh) | 2013-01-16 |
US20150028339A1 (en) | 2015-01-29 |
US20170294452A1 (en) | 2017-10-12 |
US9111808B2 (en) | 2015-08-18 |
US10714505B2 (en) | 2020-07-14 |
US20150311228A1 (en) | 2015-10-29 |
JP5581261B2 (ja) | 2014-08-27 |
US20200295049A1 (en) | 2020-09-17 |
CN102760718B (zh) | 2016-05-04 |
CN105720037B (zh) | 2018-08-07 |
US9721975B2 (en) | 2017-08-01 |
JP2012230301A (ja) | 2012-11-22 |
US20120274612A1 (en) | 2012-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102760718A (zh) | 半导体装置、显示装置和电子设备 | |
KR101343238B1 (ko) | 일체형 터치 스크린 | |
KR101346421B1 (ko) | 일체형 터치 스크린 | |
US9851832B2 (en) | Display panel, driving method thereof and display device | |
CN102566171B (zh) | 液晶显示设备和制造该液晶显示设备的方法 | |
CN202306490U (zh) | 触摸屏和计算系统 | |
JP2011013760A (ja) | 表示装置およびその駆動方法 | |
US10114504B2 (en) | Touch screen, display device and fabrication method of touch screen | |
CN204288168U (zh) | 一种触控显示面板及触控显示装置 | |
US9029971B2 (en) | Display apparatus and method of manufacturing touch substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: JAPAN DISPLAY WEST INC. Free format text: FORMER OWNER: SONY CORPORATION Effective date: 20121112 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121112 Address after: Aichi Prefecture, Japan Applicant after: Japan display West Co.,Ltd. Address before: Tokyo, Japan Applicant before: Sony Corp. |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
CB02 | Change of applicant information |
Address after: Tokyo, Japan Applicant after: JAPAN DISPLAY Inc. Address before: Chiba County, Japan Applicant before: Japan Display East Inc. |
|
COR | Change of bibliographic data | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160112 Address after: Chiba County, Japan Applicant after: Japan Display East Inc. Address before: Aichi Prefecture, Japan Applicant before: Japan display West Co.,Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160504 Termination date: 20210416 |
|
CF01 | Termination of patent right due to non-payment of annual fee |