CN102751320B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN102751320B
CN102751320B CN201210055560.8A CN201210055560A CN102751320B CN 102751320 B CN102751320 B CN 102751320B CN 201210055560 A CN201210055560 A CN 201210055560A CN 102751320 B CN102751320 B CN 102751320B
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CN
China
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layer
source
mask
base
gate
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Expired - Fee Related
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CN201210055560.8A
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English (en)
Chinese (zh)
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CN102751320A (zh
Inventor
约瑟夫·尼尔·梅里特
伊格尔·桑金
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PI Corp
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PI Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
CN201210055560.8A 2005-12-05 2006-12-04 半导体器件 Expired - Fee Related CN102751320B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/293,261 US7314799B2 (en) 2005-12-05 2005-12-05 Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making
US11/293,261 2005-12-05

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2006800457152A Division CN101341579B (zh) 2005-12-05 2006-12-04 具有再生长栅极的自对准沟槽场效应晶体管和具有再生长基极接触区的双极结型晶体管及其制造方法

Publications (2)

Publication Number Publication Date
CN102751320A CN102751320A (zh) 2012-10-24
CN102751320B true CN102751320B (zh) 2015-05-13

Family

ID=37897286

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201210055560.8A Expired - Fee Related CN102751320B (zh) 2005-12-05 2006-12-04 半导体器件
CN2006800457152A Expired - Fee Related CN101341579B (zh) 2005-12-05 2006-12-04 具有再生长栅极的自对准沟槽场效应晶体管和具有再生长基极接触区的双极结型晶体管及其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2006800457152A Expired - Fee Related CN101341579B (zh) 2005-12-05 2006-12-04 具有再生长栅极的自对准沟槽场效应晶体管和具有再生长基极接触区的双极结型晶体管及其制造方法

Country Status (9)

Country Link
US (3) US7314799B2 (https=)
EP (1) EP1969617B1 (https=)
JP (1) JP5424192B2 (https=)
KR (1) KR101318041B1 (https=)
CN (2) CN102751320B (https=)
AU (1) AU2006322108B2 (https=)
CA (1) CA2632233A1 (https=)
NZ (1) NZ568487A (https=)
WO (1) WO2007067458A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7553718B2 (en) * 2005-01-28 2009-06-30 Texas Instruments Incorporated Methods, systems and structures for forming semiconductor structures incorporating high-temperature processing steps
US7314799B2 (en) 2005-12-05 2008-01-01 Semisouth Laboratories, Inc. Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making
US7648898B2 (en) * 2008-02-19 2010-01-19 Dsm Solutions, Inc. Method to fabricate gate electrodes
JP5324157B2 (ja) * 2008-08-04 2013-10-23 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN101901767B (zh) * 2009-05-26 2011-12-14 上海华虹Nec电子有限公司 获得垂直型沟道高压超级结半导体器件的方法
KR20120032531A (ko) * 2009-06-19 2012-04-05 에스에스 에스시 아이피, 엘엘시 이온주입 없이 ｖｊｆｅｔ와 ｂｊｔ를 제조하는 방법 및 그 장치
JP2011119512A (ja) * 2009-12-04 2011-06-16 Denso Corp 半導体装置およびその製造方法
US8969912B2 (en) 2011-08-04 2015-03-03 Avogy, Inc. Method and system for a GaN vertical JFET utilizing a regrown channel
US9184305B2 (en) * 2011-08-04 2015-11-10 Avogy, Inc. Method and system for a GAN vertical JFET utilizing a regrown gate
US8716078B2 (en) * 2012-05-10 2014-05-06 Avogy, Inc. Method and system for a gallium nitride vertical JFET with self-aligned gate metallization
JP6138619B2 (ja) * 2013-07-30 2017-05-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2016032014A (ja) * 2014-07-29 2016-03-07 日本電信電話株式会社 窒化物半導体装置の製造方法
CN105070767B (zh) * 2015-08-05 2018-04-20 西安电子科技大学 一种基于碳基复合电极的高温SiC JFET器件
CN105097456B (zh) * 2015-08-24 2018-09-11 泰科天润半导体科技（北京）有限公司 一种用于碳化硅器件的自对准方法
WO2017058589A1 (en) * 2015-09-30 2017-04-06 Tokyo Electron Limited Method for patterning a substrate using extreme ultraviolet lithography
CN107681001B (zh) * 2017-07-24 2020-04-07 中国电子科技集团公司第五十五研究所 一种碳化硅开关器件及制作方法
CN116544282B (zh) * 2023-07-06 2024-04-09 深圳平创半导体有限公司 碳化硅结型栅双极型晶体管器件及其制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587712A (en) * 1981-11-23 1986-05-13 General Electric Company Method for making vertical channel field controlled device employing a recessed gate structure
US6049098A (en) * 1995-04-27 2000-04-11 Nec Corporation Bipolar transistor having an emitter region formed of silicon carbide
CN1267916A (zh) * 1999-03-15 2000-09-27 松下电器产业株式会社 半导体器件及其制造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945394A (en) * 1987-10-26 1990-07-31 North Carolina State University Bipolar junction transistor on silicon carbide
JP3214868B2 (ja) 1991-07-19 2001-10-02 ローム株式会社 ヘテロ接合バイポーラトランジスタの製造方法
US5286996A (en) * 1991-12-31 1994-02-15 Purdue Research Foundation Triple self-aligned bipolar junction transistor
US5350669A (en) * 1994-01-19 1994-09-27 Minnesota Mining And Manufacturing Company Silver-carboxylate/1,2-diazine compounds as silver sources in photothermographic and thermographic elements
US5481126A (en) * 1994-09-27 1996-01-02 Purdue Research Foundation Semiconductor-on-insulator electronic devices having trench isolated monocrystalline active regions
JPH09172187A (ja) * 1995-12-19 1997-06-30 Hitachi Ltd 接合型電界効果半導体装置およびその製造方法
US5859447A (en) 1997-05-09 1999-01-12 Yang; Edward S. Heterojunction bipolar transistor having heterostructure ballasting emitter
GB9928285D0 (en) * 1999-11-30 2000-01-26 Koninkl Philips Electronics Nv Manufacture of trench-gate semiconductor devices
EP1128429A1 (de) 2000-02-22 2001-08-29 Infineon Technologies AG Verfahren zur Herstellung von bipolaren Transistoren im BiCMOS-Verfahren
US6861324B2 (en) 2001-06-15 2005-03-01 Maxim Integrated Products, Inc. Method of forming a super self-aligned hetero-junction bipolar transistor
AU2002367561A1 (en) * 2001-07-12 2003-09-16 Mississippi State University Self-aligned transistor and diode topologies
JP4288907B2 (ja) * 2001-08-29 2009-07-01 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP2003069039A (ja) * 2001-08-29 2003-03-07 Denso Corp 炭化珪素半導体装置およびその製造方法
JP4060580B2 (ja) 2001-11-29 2008-03-12 株式会社ルネサステクノロジ ヘテロ接合バイポーラトランジスタ
JP4110875B2 (ja) 2002-08-09 2008-07-02 株式会社デンソー 炭化珪素半導体装置
JP2004134547A (ja) * 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
JP4489446B2 (ja) * 2004-01-21 2010-06-23 独立行政法人科学技術振興機構 ガリウム含有窒化物単結晶の製造方法
SE527205C2 (sv) 2004-04-14 2006-01-17 Denso Corp Förfarande för tillverkning av halvledaranordning med kanal i halvledarsubstrat av kiselkarbid
US7314799B2 (en) 2005-12-05 2008-01-01 Semisouth Laboratories, Inc. Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587712A (en) * 1981-11-23 1986-05-13 General Electric Company Method for making vertical channel field controlled device employing a recessed gate structure
US6049098A (en) * 1995-04-27 2000-04-11 Nec Corporation Bipolar transistor having an emitter region formed of silicon carbide
CN1267916A (zh) * 1999-03-15 2000-09-27 松下电器产业株式会社 半导体器件及其制造方法

Also Published As

Publication number Publication date
JP5424192B2 (ja) 2014-02-26
KR101318041B1 (ko) 2013-10-14
CN102751320A (zh) 2012-10-24
KR20080075025A (ko) 2008-08-13
EP1969617B1 (en) 2015-02-25
NZ568487A (en) 2011-07-29
US20070275527A1 (en) 2007-11-29
US20080061362A1 (en) 2008-03-13
US20120305994A1 (en) 2012-12-06
US7314799B2 (en) 2008-01-01
CN101341579B (zh) 2012-03-21
AU2006322108A1 (en) 2007-06-14
CN101341579A (zh) 2009-01-07
WO2007067458A1 (en) 2007-06-14
AU2006322108B2 (en) 2011-04-14
CA2632233A1 (en) 2007-06-14
JP2009518862A (ja) 2009-05-07
US8729628B2 (en) 2014-05-20
EP1969617A1 (en) 2008-09-17

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