CN102714222B - 体连结不对称n型场效应晶体管 - Google Patents

体连结不对称n型场效应晶体管 Download PDF

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Publication number
CN102714222B
CN102714222B CN201180005602.0A CN201180005602A CN102714222B CN 102714222 B CN102714222 B CN 102714222B CN 201180005602 A CN201180005602 A CN 201180005602A CN 102714222 B CN102714222 B CN 102714222B
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CN
China
Prior art keywords
field effect
asymmetric
type field
effect transistor
raceway groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180005602.0A
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English (en)
Chinese (zh)
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CN102714222A (zh
Inventor
J·B·常
L·常
C-H·林
J·W·斯莱特
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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Publication of CN102714222A publication Critical patent/CN102714222A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201180005602.0A 2010-01-07 2011-01-05 体连结不对称n型场效应晶体管 Expired - Fee Related CN102714222B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/683,634 2010-01-07
US12/683,634 US8643107B2 (en) 2010-01-07 2010-01-07 Body-tied asymmetric N-type field effect transistor
PCT/US2011/020173 WO2011084975A2 (en) 2010-01-07 2011-01-05 A body-tied asymmetric n-type field effect transistor

Publications (2)

Publication Number Publication Date
CN102714222A CN102714222A (zh) 2012-10-03
CN102714222B true CN102714222B (zh) 2016-01-27

Family

ID=44224203

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180005602.0A Expired - Fee Related CN102714222B (zh) 2010-01-07 2011-01-05 体连结不对称n型场效应晶体管

Country Status (5)

Country Link
US (1) US8643107B2 (https=)
EP (1) EP2522032A4 (https=)
JP (1) JP5717763B2 (https=)
CN (1) CN102714222B (https=)
WO (1) WO2011084975A2 (https=)

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US8674422B2 (en) * 2012-01-30 2014-03-18 Synopsys, Inc. Asymmetric dense floating gate nonvolatile memory with decoupled capacitor
US8853761B2 (en) 2012-01-30 2014-10-07 Synopsys, Inc. Asymmetric dense floating gate nonvolatile memory with decoupled capacitor
US8822278B2 (en) * 2012-03-29 2014-09-02 International Business Machines Corporation Asymmetric FET formed through use of variable pitch gate for use as logic device and test structure
US9842858B2 (en) 2015-11-18 2017-12-12 Peregrine Semiconductor Corporation Butted body contact for SOI transistor
US9837965B1 (en) 2016-09-16 2017-12-05 Peregrine Semiconductor Corporation Standby voltage condition for fast RF amplifier bias recovery
US9960737B1 (en) 2017-03-06 2018-05-01 Psemi Corporation Stacked PA power control
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Also Published As

Publication number Publication date
EP2522032A2 (en) 2012-11-14
CN102714222A (zh) 2012-10-03
WO2011084975A3 (en) 2011-12-29
JP2013516793A (ja) 2013-05-13
WO2011084975A2 (en) 2011-07-14
US20110163380A1 (en) 2011-07-07
US8643107B2 (en) 2014-02-04
JP5717763B2 (ja) 2015-05-13
EP2522032A4 (en) 2014-05-28

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Effective date of registration: 20171108

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