CN102693939B - 显示装置、显示装置的制造方法和电子设备 - Google Patents
显示装置、显示装置的制造方法和电子设备 Download PDFInfo
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- CN102693939B CN102693939B CN201210075857.0A CN201210075857A CN102693939B CN 102693939 B CN102693939 B CN 102693939B CN 201210075857 A CN201210075857 A CN 201210075857A CN 102693939 B CN102693939 B CN 102693939B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80515—Anodes characterised by their shape
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-066283 | 2011-03-24 | ||
JP2011066283A JP5825812B2 (ja) | 2011-03-24 | 2011-03-24 | 表示装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102693939A CN102693939A (zh) | 2012-09-26 |
CN102693939B true CN102693939B (zh) | 2016-08-24 |
Family
ID=46859297
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210075857.0A Active CN102693939B (zh) | 2011-03-24 | 2012-03-19 | 显示装置、显示装置的制造方法和电子设备 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9324741B2 (zh) |
JP (1) | JP5825812B2 (zh) |
CN (1) | CN102693939B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6083089B2 (ja) * | 2013-03-27 | 2017-02-22 | 株式会社Joled | 半導体装置、表示装置および電子機器 |
JP2015049947A (ja) | 2013-08-29 | 2015-03-16 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネッセンス表示装置 |
CN103413898B (zh) * | 2013-08-29 | 2015-11-11 | 深圳市华星光电技术有限公司 | 有机发光二极管阳极连接结构及其制作方法 |
CN103560211B (zh) * | 2013-11-13 | 2017-04-05 | 深圳市华星光电技术有限公司 | 有机电致发光器件的制作方法及制作的有机电致发光器件 |
CN104103584A (zh) * | 2014-06-25 | 2014-10-15 | 京东方科技集团股份有限公司 | 阵列基板制作方法 |
CN106206617A (zh) * | 2016-08-29 | 2016-12-07 | 武汉华星光电技术有限公司 | 基于低温多晶硅的阵列基板及其制作方法 |
WO2019224917A1 (ja) * | 2018-05-22 | 2019-11-28 | シャープ株式会社 | 表示装置 |
JPWO2021015057A1 (zh) * | 2019-07-25 | 2021-01-28 | ||
CN114126859B (zh) * | 2019-07-25 | 2023-10-20 | Agc株式会社 | 层叠构件 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101127366A (zh) * | 2006-08-18 | 2008-02-20 | 三星电子株式会社 | 显示装置及其制造方法 |
Family Cites Families (32)
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---|---|---|---|---|
JP3809758B2 (ja) | 1999-10-28 | 2006-08-16 | ソニー株式会社 | 表示装置及び表示装置の製造方法 |
US7023021B2 (en) * | 2000-02-22 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP3906653B2 (ja) * | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 画像表示装置及びその製造方法 |
JP2002076352A (ja) * | 2000-08-31 | 2002-03-15 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
JP4954366B2 (ja) * | 2000-11-28 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW525216B (en) * | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
JP2003179069A (ja) * | 2001-12-12 | 2003-06-27 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ、液晶表示装置、有機エレクトロルミネッセンス素子、ならびに表示装置用基板およびその製造方法 |
JP2004296963A (ja) * | 2003-03-28 | 2004-10-21 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
JP4741177B2 (ja) * | 2003-08-29 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
KR100606449B1 (ko) * | 2003-12-29 | 2006-07-31 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 제조방법 |
KR100604762B1 (ko) * | 2004-04-23 | 2006-07-26 | 일진디스플레이(주) | 액정 디스플레이 패널 및 그 제조 방법 |
JP5646000B2 (ja) * | 2005-03-31 | 2014-12-24 | 東芝燃料電池システム株式会社 | 燃料電池システム |
KR100712295B1 (ko) * | 2005-06-22 | 2007-04-27 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 및 그 제조 방법 |
JP4543013B2 (ja) * | 2005-06-29 | 2010-09-15 | エルジー ディスプレイ カンパニー リミテッド | 液晶表示装置及びその製造方法 |
TWI309889B (en) * | 2006-09-01 | 2009-05-11 | Au Optronics Corp | Liquid crystal display structure and method for manufacturing the same |
JP2008112136A (ja) * | 2006-10-04 | 2008-05-15 | Mitsubishi Electric Corp | 表示装置及びその製造方法 |
KR100787461B1 (ko) * | 2006-11-10 | 2007-12-26 | 삼성에스디아이 주식회사 | 다층 구조의 애노드를 채용한 유기 발광 디스플레이 장치 |
TWI351764B (en) * | 2007-04-03 | 2011-11-01 | Au Optronics Corp | Pixel structure and method for forming the same |
KR100858822B1 (ko) * | 2007-05-11 | 2008-09-17 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 이를 포함한 유기 발광 표시장치 및 유기발광 표시장치의 제조방법 |
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US20120241745A1 (en) | 2012-09-27 |
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