CN102652357B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN102652357B
CN102652357B CN201080055269.XA CN201080055269A CN102652357B CN 102652357 B CN102652357 B CN 102652357B CN 201080055269 A CN201080055269 A CN 201080055269A CN 102652357 B CN102652357 B CN 102652357B
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Prior art keywords
electrode
resin
recess
semiconductor device
semiconductor element
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Expired - Fee Related
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CN201080055269.XA
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CN102652357A (zh
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大野裕孝
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Denso Corp
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Toyota Motor Corp
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    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
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  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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Abstract

一种廉价地提高树脂对基板的粘合性的半导体装置，其中，半导体元件(11)和一片或两片基板(12、13)被树脂(10)密封，所述一片或两片基板被配置为与所述半导体元件(11)的一个面或两个面相对，在一片或两片基板(12、13)上形成有通过冷喷法喷射金属粉末而成膜的树脂接合膜(18)，在所述树脂接合膜(18)上形成有其空间从膜表面向深度方向扩展的凹部(181)。

Description

半导体装置
技术领域
本发明涉及廉价地提高基板和密封树脂的粘合性的半导体装置。
背景技术
在半导体装置中，半导体元件经由焊锡被接合到基板，并且整体上通过树脂来密封。但是，基板的线膨胀系数大，从而存在由于冷热循环导致密封树脂剥离的问题。因此，已知有为了防止剥离而在基板上涂布聚酰胺树脂或者聚酰亚胺树脂的技术。除此之外，在下述的专利文献1中公开了在基板上形成由铝(Al)或硅的氧化物(Al2O3、SiO2)组成的喷镀覆膜的技术。实施了喷镀包覆的基板与密封树脂的粘合变得牢固。另外，在下述的专利文献2中公开了如下技术：使用具有多个突起的加工冲头通过冲压处理在基板的表面上形成多个凹部，进入该凹部的密封树脂挂在该凹部上来使粘合更牢固。
在先技术文献
专利文献
专利文献1：日本专利文献特开平6-112390号公报；
专利文献2：日本专利文献特开2007-258587号公报。
发明内容
发明所要解决的问题
但是，对于涂布聚酰胺树脂或者聚酰亚胺树脂，材料费昂贵，而且，如果附着到不应涂布的区域，则之后需要进行清洗作业等，耗费时间，并且非常麻烦。另一方面，对于喷镀覆膜，需要使铝等金属粉末熔融，然后将熔融的金属喷射到基板上，所以基板受到的热影响大。另外，喷镀需要在减压程度高的腔室内进行等，形成覆膜需要成本，由此导致半导体装置的价格上升。而且，基板被熔融的材料粉末的热加热，所以需要在成膜后进行冷却处理等也耗费时间。另外，在机械式的凹部形成过程中，存在冲压处理导致基板发生变形，从而在半导体元件的邻近部分不能形成凹部等问题。
本发明是为了解决上述问题而完成的，其目的是提供廉价地提高了树脂对基板的粘合性的半导体装置。
用于解决问题的手段
本发明的一个实施方式的半导体装置的特征在于，半导体元件和一片或两片基板被树脂密封，所述一片或两片基板被配置为与所述半导体元件的一个面或两个面相对，在所述一片或两片基板上形成有通过冷喷法喷射金属粉末而成膜的树脂接合膜，在所述树脂接合膜上形成有其空间从膜表面向深度方向扩展的凹部。。
优选在上述半导体装置中所述凹部被形成为阶梯状。
另外，优选在上述半导体装置中，所述基板是配置于所述半导体元件的两个面的第一电极和第二电极，在所述半导体元件和所述第一电极之间配置有块电极，所述块电极是在所述第一电极上通过冷喷法成膜而成的块电极。
另外，优选在上述半导体装置中，所述凹部是被配置成包围所述半导体元件和所述块电极的周围的多个孔。
另外，优选在上述半导体装置中，所述凹部是包围所述半导体元件和所述块电极的周围的槽。
另外，优选在上述半导体装置中，所述凹部通过在包围所述半导体元件和所述块电极的周围的槽上重叠形成矩形孔而构成，所述矩形孔的尺寸大于所述槽的宽度。
发明的效果
根据本发明，树脂接合膜成膜在基板上，密封树脂除了粘合树脂接合膜之外，还进入凹部并对抗将要剥离的应力从而提高粘合强度。另外，通过冷喷法成膜的树脂接合膜是多孔质的，因此表面凸凹不平，密封树脂进入该凹陷部分也能够提高接合强度。因此，通过树脂接合膜而获得的接合强度的提高，能够不再进行以往进行的涂布聚酰胺树脂等或形成由铝等组成的喷镀覆膜，能够通过降低材料成本、提高生产效率等来降低半导体装置的成本。
附图说明
图1是示出半导体装置的实施方式的截面图；
图2是概念性地示出了执行冷喷法的成膜装置的构成的图；
图3是放大示出图1的P部的、第二电极和密封树脂的边界部分的截面图；
图4是示出树脂接合膜的形成过程的概念图；
图5是关于树脂接合膜的凹部示出孔形状的例子的平面图；
图6是关于树脂接合膜的凹部示出槽形状的例子的平面图；
图7是关于树脂接合膜的凹部示出孔形状和槽形状的组合的例子的平面图。
符号说明
1  半导体装置
10  树脂
11  半导体元件
12  第一电极
13  第二电极
14  块电极
15、16  焊锡层
18  树脂接合膜
101  固定部
181  凹部
具体实施方式
接着，下面参照附图说明本发明所涉及的半导体装置的一个实施方式。图1是示出本实施方式的半导体装置的截面图。在该半导体装置1中，半导体元件11被夹在第一电极12和第二电极13之间，并且在半导体元件11和第一电极12之间配置有块电极14。第一电极12和第二电极13被设置作为发射电极或者集电极，来作为半导体元件11的各主电极，而且还具有散热板的功能，因此以电气传导性以及热传导性好的铜或铝等金属形成。
另一方面，块电极14被通过冷喷法一体形成于第一电极12。在半导体元件11和第二电极13以及块电极14之间设置有焊锡层15、16，焊锡层15、16分别与它们接合。主电极端子21、22分别被连接到第一电极12和第二电极13，等电位连接线24被连接于控制电极端子23与半导体元件11之间。而且，整体被密封树脂10密封。第一电极12和第二电极13是权利要求中记载的基板的一个例子，在其表面形成有通过冷喷法形成的树脂接合膜18。
图2是概念性地示出执行冷喷法的成膜装置的构成的图。成膜装置80具有供应压缩气体的压缩机81，从该压缩机81送出的压缩气体被加热装置82加热，经由压力调整阀83从喷嘴84喷射。粉末罐体85中填充有例如铜粉末，为了也能够在喷嘴84加热从该粉末罐体85送入的铜粉末而设置有加热器86。而且，为了将铜粉末喷射到特定的区域而成膜，还设置有使喷嘴84平行移动的驱动装置87。
在通过成膜装置80对块电极14成膜的情况下，在第一电极12上配置掩膜88。掩膜88形成与成膜区域大小相当的开口框881，并且开口框881的位置与第一电极12相配合。喷嘴84被从粉末罐体85供应平均粒径为5～60μm的铜粉末，该铜粉末被加热器86加热。另外，从压缩机81来的被加热的压缩气体被送入喷嘴84。
被加热到50℃～200℃的固体状态的铜粉末与压缩气体一起被从喷嘴84强有力地向第一电极12的表面喷射。从喷嘴84喷射出的铜粉末保持固体状态以音速到超音速程度的高速度冲击第一电极12，通过塑性变形并附着来形成膜。在铜粉末冲击时动能转化成热能，根据材料的不同，材料表面超过熔点从而相互结合得到牢固的粘合力。而且，通过喷射铜粉末的喷嘴84沿成膜区域反复水平移动，而在第一电极12上形成预定厚度的块电极14。
接着，说明在第一电极12和第二电极13的表面上进行的、通过冷喷法进行的树脂接合膜18的形成。以往认为密封树脂10的剥离是由于冷热循环导致的。这次进一步判明，在半导体装置1的树脂密封工序中，由于环氧树脂在高温硬化时的交联反应导致体积收缩的硬化收缩与从高温的硬化温度冷却到室温时的热收缩相结合，将要剥离与电极12、13的粘合的应力也非常大。
特别是，如半导体装置1那样，用于两面冷却的具有大电极12、13的电源卡(Power Card)被配置成两片电极12、13通过块电极14而相隔一定的距离，其间被填入密封树脂10。在该电极12、13之间的密封树脂10硬化收缩时，导致两面相对的电极彼此接近以缩短彼此的距离，但是之间的块电极14阻止它们彼此接近。这时，促使剥离的应力作用到密封树脂10和电极12、13的粘合界面上，由于密封树脂10的粘接力不足而剥离。
因此，在半导体装置1中，在第一电极12和第二电极13与密封树脂10的边界面上，形成能够牢固粘合的树脂接合膜18。图3是放大示出图1的P部的、第二电极13和密封树脂10的边界部分的截面图。树脂接合膜18是通过冷喷法成膜的，特别是形成了作为密封树脂10进入的空间的凹部181。凹部181被形成为从膜表面向深度方向扩展空间。具体地说，由于阶梯差从而其表面的开口部侧变窄，进入凹部181并硬化的密封树脂10的固定部101被卡住从而不能拔出。
接着，图4是示出树脂接合膜18的形成过程的概念图。对于树脂接合膜18的成膜，首先在与第一电极12或第二电极13对应的基板30上形成用于形成凹部181的空间的2级的抗蚀剂块31。例如使用光刻法，在基板30上涂布光致抗蚀剂，之后，从掩膜之上照射紫外线。化学变化的部分的光致抗蚀剂熔化而形成抗蚀剂块31。抗蚀剂块31被顺序地形成下层块311和上层块312，下层块311的面积比上层块312的大。
形成抗蚀剂块31之后，使用前述的成膜装置80通过冷喷法来成膜树脂接合膜18。一旦对基板30喷射铜粉末，则在基板30的表面上埋入抗蚀剂块31从而形成预定厚度的树脂接合膜18。之后，使用氧化等离子体等进行灰化处理从而去除埋入树脂接合膜18之中的抗蚀剂块31。进一步，通过使用酸等溶液进行清洗来去除金属或有机物等杂质。这样，在去除了抗蚀剂块31的树脂接合膜18中形成了深度方向的空间比表面的开口侧扩展的凹部181。
但是，针对半导体装置1的第一电极12和第二电极13的树脂接合膜18在配置于半导体装置1中央的半导体元件11和块电极14的周围形成凹部181。图5至图7是示出第二电极13的树脂接合膜18上形成的凹部的各种例子的平面图。凹部181的一个例子是如图5所示的矩形的孔，并以包围半导体元件11的接合区域131的周围的方式被配置多个。另外，作为凹部181的其他的例子，如图6所示，可以是包围接合区域131的周围的多个槽。进一步作为凹部181的其他的例子，如图7所示，可以是在包围接合区域131的周围的环状的槽上组合了尺寸比该槽的宽度大的矩形的孔。
这样，图1所示的半导体装置1在第一电极12以及第二电极13的表面上形成树脂接合膜18，如图3所示，密封树脂10与树脂接合膜18粘合。特别是，进入凹部181的固定部101对抗使密封树脂10将要剥离的应力从而提高粘合强度。另外，通过冷喷法成膜的树脂接合膜18是多孔质的所以表面凸凹。因此，密封树脂10进入树脂接合膜18的表面的凹陷部分也能够提高接合强度。这一点上，在半导体装置1中，由于块电极14也是通过冷喷法成膜的，所以密封树脂10与该块电极14之间的接合强度也得到提高。
在树脂接合膜18的凹部181是如图5所示的孔的情况下，进入该孔的密封树脂10向四方扩展从而粘合、卡在该孔处，由此密封树脂10的接合强度得到提高。另一方面，在凹部181是如图6所示的槽的情况下，进入凹部181的密封树脂10流动到槽的角落。因此，能够挤出内部的气泡形成以树脂覆盖的固定部101，保证粘合力。此外，凹部181是如图7所示的孔和槽的组合的情况下，能够达到两者的效果。即，在容易残留气泡的孔部分，树脂的进入而将气泡挤出到槽部分，在该孔部分中，形成以树脂覆盖的固定部101的同时，通过四周的卡住从而接合强度得到提高。
在本实施方式中，通过由树脂接合膜18带来的接合强度的提高，能够不再使用以往进行的涂布聚酰胺树脂等或者形成由铝等组成的喷镀覆膜，通过降低材料成本、提高生产效率等能够降低半导体装置1的成本。另外，形成凹部181并不会发生类似冲压处理等那样的变形，因此能够在第二电极13上半导体元件11的邻近部分形成凹部181。另外，通过以热传导性和电气传导性好的铝和铜等金属来形成树脂接合膜18，能够在第二电极13的全体上成膜。因此，在半导体元件11的邻近部分能够保证树脂接合膜18和密封树脂10的粘合性。
另外，在使用了冷喷法的情况下，能够容易且均匀地立体成形树脂接合膜18，能够直接进行焊锡。通过以铜或者镍、银、铜来形成树脂接合膜18，能够进行焊锡，因此不再需要以往在第一电极12以及第二电极13上实施的镀镍、镀金。镀镍是与密封树脂的粘合性下降的原因，镀金非常昂贵。在这一点上，能够降低半导体装置1的价格。
进一步，通过冷喷法成膜的块电极14和树脂接合膜18由于表面的凸凹而产生毛细现象。因此，剩余的焊锡被凹部吸收从而防止多余的焊锡的溢出，具有防止焊锡成为滴状从而附着在其余的部位的效果。
此外，本发明不限于所述的实施方式，毋庸置疑，在不脱离本发明的主旨的范围内能够进行各种的改良、变形。
例如，在图1中示出并说明了用于两面冷却的半导体装置1，也可以是仅在半导体元件的单侧设置电极的用于单面冷却的半导体装置。
另外，例如，在图5以及图7中，作为凹部181的形状例举了矩形的孔并进行了说明，但是也可以是圆形等其他的形状。

Claims (8)

1.一种半导体装置，其中，半导体元件和一片或两片基板被树脂密封，所述一片或两片基板被配置为与所述半导体元件的一个面或两个面相对，所述半导体装置的特征在于，
在所述一片或两片基板上形成有通过冷喷法喷射金属粉末而成膜的树脂接合膜，在所述树脂接合膜上形成有其空间从膜表面向深度方向扩展的凹部，
其中，所述凹部通过以下形成：首先在所述基板上形成用于所述凹部的空间的二级抗蚀剂块，在形成所述抗蚀剂块之后，通过冷喷法形成所述树脂接合膜，此后，通过灰化处理去除埋入所述树脂接合膜中的所述抗蚀剂块，
其中，所述凹部被形成为阶梯状。
2.根据权利要求1所述的半导体装置，其特征在于，
所述基板是配置于所述半导体元件的两个面的第一电极和第二电极，在所述半导体元件和所述第一电极之间配置有块电极，所述块电极是在所述第一电极上通过冷喷法成膜而成的块电极。
3.根据权利要求1所述的半导体装置，其特征在于，
所述凹部是被配置成包围所述半导体元件的周围的多个孔。
4.根据权利要求1所述的半导体装置，其特征在于，
所述凹部是包围所述半导体元件的周围的槽。
5.根据权利要求1所述的半导体装置，其特征在于，
所述凹部通过在包围所述半导体元件的周围的槽上重叠形成矩形孔而构成，所述矩形孔的尺寸大于所述槽的宽度。
6.根据权利要求2所述的半导体装置，其特征在于，
所述凹部是被配置成包围所述半导体元件和所述块电极的周围的多个孔。
7.根据权利要求2所述的半导体装置，其特征在于，
所述凹部是包围所述半导体元件和所述块电极的周围的槽。
8.根据权利要求2所述的半导体装置，其特征在于，
所述凹部通过在包围所述半导体元件和所述块电极的周围的槽上重叠形成矩形孔而构成，所述矩形孔的尺寸大于所述槽的宽度。
CN201080055269.XA 2010-05-21 2010-05-21 半导体装置 Expired - Fee Related CN102652357B (zh)

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JP5713032B2 (ja) * 2013-01-21 2015-05-07 トヨタ自動車株式会社 半導体装置の製造方法
KR101748508B1 (ko) * 2013-01-29 2017-06-16 도요타지도샤가부시키가이샤 전지
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JP6481409B2 (ja) * 2015-02-19 2019-03-13 三菱マテリアル株式会社 パワーモジュール用基板及びパワーモジュール
KR102424402B1 (ko) 2015-08-13 2022-07-25 삼성전자주식회사 반도체 패키지 및 그 제조방법
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