CN102651637B - 压电元件以及压电元件的制造方法 - Google Patents

压电元件以及压电元件的制造方法 Download PDF

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Publication number
CN102651637B
CN102651637B CN201210039776.5A CN201210039776A CN102651637B CN 102651637 B CN102651637 B CN 102651637B CN 201210039776 A CN201210039776 A CN 201210039776A CN 102651637 B CN102651637 B CN 102651637B
Authority
CN
China
Prior art keywords
wafer
base
piezoelectric element
crystal
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210039776.5A
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English (en)
Chinese (zh)
Other versions
CN102651637A (zh
Inventor
关口浩基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Dempa Kogyo Co Ltd
Original Assignee
Nihon Dempa Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Dempa Kogyo Co Ltd filed Critical Nihon Dempa Kogyo Co Ltd
Publication of CN102651637A publication Critical patent/CN102651637A/zh
Application granted granted Critical
Publication of CN102651637B publication Critical patent/CN102651637B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1035—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
CN201210039776.5A 2011-02-23 2012-02-20 压电元件以及压电元件的制造方法 Expired - Fee Related CN102651637B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011036700A JP2012175492A (ja) 2011-02-23 2011-02-23 圧電デバイス及び圧電デバイスの製造方法
JP2011-036700 2011-02-23

Publications (2)

Publication Number Publication Date
CN102651637A CN102651637A (zh) 2012-08-29
CN102651637B true CN102651637B (zh) 2015-07-08

Family

ID=46652174

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210039776.5A Expired - Fee Related CN102651637B (zh) 2011-02-23 2012-02-20 压电元件以及压电元件的制造方法

Country Status (4)

Country Link
US (1) US8686621B2 (enExample)
JP (1) JP2012175492A (enExample)
CN (1) CN102651637B (enExample)
TW (1) TWI492430B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5588784B2 (ja) * 2010-08-20 2014-09-10 日本電波工業株式会社 圧電デバイスの製造方法及び圧電デバイス
JP2013062578A (ja) * 2011-09-12 2013-04-04 Nippon Dempa Kogyo Co Ltd 水晶振動片及び水晶デバイス
KR101575800B1 (ko) * 2014-08-19 2015-12-08 주식회사 이노칩테크놀로지 압전 소자 및 이를 구비하는 전자기기
JP6390353B2 (ja) * 2014-11-05 2018-09-19 富士通株式会社 水晶振動子の特性測定方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101110579A (zh) * 2006-07-21 2008-01-23 富士通媒体部品株式会社 表面声波器件

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69429848T2 (de) * 1993-11-01 2002-09-26 Matsushita Electric Industrial Co., Ltd. Elektronische Anordnung und Verfahren zur Herstellung
JPH07235854A (ja) * 1994-02-23 1995-09-05 Miyota Kk 圧電振動子の容器
JPH09326657A (ja) * 1996-06-06 1997-12-16 Nippon Dempa Kogyo Co Ltd 圧電振動子の製造方法
JP3296356B2 (ja) * 1999-02-08 2002-06-24 松下電器産業株式会社 弾性表面波デバイスとその製造方法
JP2002076817A (ja) * 2000-08-25 2002-03-15 Daishinku Corp 圧電振動デバイス
JP4068367B2 (ja) * 2002-03-08 2008-03-26 シチズンホールディングス株式会社 圧電デバイス用集合基板、圧電デバイス及びその製造方法
JP4497345B2 (ja) * 2003-02-12 2010-07-07 株式会社村田製作所 振動子の支持構造及び該支持構造の製造方法
JP4424009B2 (ja) * 2003-05-30 2010-03-03 株式会社村田製作所 圧電共振部品の製造方法
JP2005065104A (ja) * 2003-08-19 2005-03-10 Murata Mfg Co Ltd 表面実装型圧電振動子およびその製造方法
JP2006066879A (ja) * 2004-07-29 2006-03-09 Seiko Epson Corp 気密パッケージ、圧電デバイス、及び圧電発振器
JP2006148758A (ja) 2004-11-24 2006-06-08 Kyocera Kinseki Corp 水晶振動子パッケージ
JP2006254210A (ja) * 2005-03-11 2006-09-21 Seiko Epson Corp 圧電デバイス
US20060255691A1 (en) * 2005-03-30 2006-11-16 Takahiro Kuroda Piezoelectric resonator and manufacturing method thereof
CN101278478B (zh) * 2005-09-30 2011-09-21 株式会社大真空 压电振动器件
JP4777744B2 (ja) * 2005-11-01 2011-09-21 セイコーインスツル株式会社 圧電振動子用ウェハ体及び圧電振動子の製造方法
US7378780B2 (en) * 2005-11-09 2008-05-27 Nihon Dempa Kogyo Co., Ltd. Surface mount type crystal oscillator
JP4635917B2 (ja) * 2006-03-09 2011-02-23 株式会社大真空 表面実装型圧電振動デバイス
JP5282392B2 (ja) * 2007-11-05 2013-09-04 セイコーエプソン株式会社 直接接合用ウェハ
US8147632B2 (en) * 2008-05-30 2012-04-03 Corning Incorporated Controlled atmosphere when sintering a frit to a glass plate
JP5277866B2 (ja) * 2008-10-29 2013-08-28 セイコーエプソン株式会社 圧電振動片、および圧電デバイス
JP5362643B2 (ja) * 2009-06-30 2013-12-11 日本電波工業株式会社 積層型の水晶振動子
JP2011029911A (ja) * 2009-07-24 2011-02-10 Seiko Instruments Inc 圧電振動子の製造方法、並びに圧電振動子、発振器、電子機器および電波時計
JP5731880B2 (ja) * 2010-10-15 2015-06-10 日本電波工業株式会社 圧電デバイス及び圧電デバイスの製造方法
JP2012186709A (ja) * 2011-03-07 2012-09-27 Nippon Dempa Kogyo Co Ltd 圧電振動片及び圧電デバイス

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101110579A (zh) * 2006-07-21 2008-01-23 富士通媒体部品株式会社 表面声波器件

Also Published As

Publication number Publication date
CN102651637A (zh) 2012-08-29
JP2012175492A (ja) 2012-09-10
US20120212105A1 (en) 2012-08-23
TW201251156A (en) 2012-12-16
US8686621B2 (en) 2014-04-01
TWI492430B (zh) 2015-07-11

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Granted publication date: 20150708

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