CN102637703B - 固态图像拾取设备和用于制造固态图像拾取设备的方法 - Google Patents
固态图像拾取设备和用于制造固态图像拾取设备的方法 Download PDFInfo
- Publication number
- CN102637703B CN102637703B CN201210024736.3A CN201210024736A CN102637703B CN 102637703 B CN102637703 B CN 102637703B CN 201210024736 A CN201210024736 A CN 201210024736A CN 102637703 B CN102637703 B CN 102637703B
- Authority
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- China
- Prior art keywords
- image pickup
- state image
- solid
- substrate
- pickup device
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 32
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
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- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
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- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-026346 | 2011-02-09 | ||
| JP2011026346 | 2011-02-09 | ||
| JP2011223302A JP5284438B2 (ja) | 2011-02-09 | 2011-10-07 | 固体撮像装置、及び固体撮像装置の製造方法 |
| JP2011-223302 | 2011-10-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102637703A CN102637703A (zh) | 2012-08-15 |
| CN102637703B true CN102637703B (zh) | 2016-03-16 |
Family
ID=45463485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210024736.3A Expired - Fee Related CN102637703B (zh) | 2011-02-09 | 2012-02-06 | 固态图像拾取设备和用于制造固态图像拾取设备的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9224777B2 (enExample) |
| EP (1) | EP2487715B1 (enExample) |
| JP (1) | JP5284438B2 (enExample) |
| KR (1) | KR101476497B1 (enExample) |
| CN (1) | CN102637703B (enExample) |
| BR (1) | BR102012002818A2 (enExample) |
| RU (1) | RU2497233C2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012182426A (ja) * | 2011-02-09 | 2012-09-20 | Canon Inc | 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法 |
| US20120267741A1 (en) * | 2011-04-21 | 2012-10-25 | Panasonic Corporation | Solid-state imaging device and method for manufacturing the same |
| US20140187045A1 (en) * | 2013-01-02 | 2014-07-03 | Applied Materials, Inc. | Silicon nitride gapfill implementing high density plasma |
| JP6136663B2 (ja) * | 2013-07-04 | 2017-05-31 | ソニー株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
| JP6465545B2 (ja) | 2013-09-27 | 2019-02-06 | ソニー株式会社 | 撮像素子およびその製造方法ならびに電子機器 |
| TWI571626B (zh) | 2015-07-15 | 2017-02-21 | 力晶科技股份有限公司 | 具有奈米腔的集成生物感測器及其製作方法 |
| JP2017069553A (ja) | 2015-09-30 | 2017-04-06 | キヤノン株式会社 | 固体撮像装置、その製造方法及びカメラ |
| US10375338B2 (en) * | 2017-02-01 | 2019-08-06 | Omnivision Technologies, Inc. | Two stage amplifier readout circuit in pixel level hybrid bond image sensors |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1745478A (zh) * | 2002-12-13 | 2006-03-08 | 索尼株式会社 | 固态成像装置及其制造方法 |
| CN101425525A (zh) * | 2007-10-29 | 2009-05-06 | 株式会社东芝 | 半导体器件及其制造方法 |
| CN101714567A (zh) * | 2008-09-29 | 2010-05-26 | 索尼株式会社 | 固体摄像装置及其制造方法以及电子仪器 |
| JP2010283145A (ja) * | 2009-06-04 | 2010-12-16 | Sony Corp | 固体撮像素子及びその製造方法、電子機器 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0745601A (ja) * | 1993-07-27 | 1995-02-14 | Fuji Electric Co Ltd | プラズマｃｖｄ成膜方法およびその装置 |
| JPH0992813A (ja) * | 1995-09-27 | 1997-04-04 | Sony Corp | 固体撮像素子とその製造方法 |
| JP2001176866A (ja) * | 1999-10-28 | 2001-06-29 | Texas Instr Inc <Ti> | 集積回路の製造方法 |
| US20030110808A1 (en) * | 2001-12-14 | 2003-06-19 | Applied Materials Inc., A Delaware Corporation | Method of manufacturing an optical core |
| JP2005251804A (ja) * | 2004-03-01 | 2005-09-15 | Canon Inc | 撮像素子 |
| JP2006120845A (ja) * | 2004-10-21 | 2006-05-11 | Canon Inc | 光電変換装置およびその製造方法 |
| US7592645B2 (en) * | 2004-12-08 | 2009-09-22 | Canon Kabushiki Kaisha | Photoelectric conversion device and method for producing photoelectric conversion device |
| JP2007201162A (ja) * | 2006-01-26 | 2007-08-09 | Fujifilm Corp | 固体撮像素子の製造方法および固体撮像素子 |
| US7524690B2 (en) * | 2006-08-10 | 2009-04-28 | United Microelectronics Corp. | Image sensor with a waveguide tube and a related fabrication method |
| EP1930950B1 (en) * | 2006-12-08 | 2012-11-07 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
| KR20080111624A (ko) * | 2007-06-19 | 2008-12-24 | 삼성전자주식회사 | 플라즈마 식각장치 및 이를 이용한 챔버 세정방법 |
| US7704897B2 (en) * | 2008-02-22 | 2010-04-27 | Applied Materials, Inc. | HDP-CVD SiON films for gap-fill |
| KR20100037208A (ko) | 2008-10-01 | 2010-04-09 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조 방법 |
| KR101561862B1 (ko) * | 2008-12-26 | 2015-10-21 | 삼성전자 주식회사 | 반도체 집적 회로 장치의 제조 방법 |
| JP5644057B2 (ja) * | 2009-03-12 | 2014-12-24 | ソニー株式会社 | 固体撮像装置とその製造方法および撮像装置 |
| JP5434252B2 (ja) * | 2009-05-14 | 2014-03-05 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
-
2011
- 2011-10-07 JP JP2011223302A patent/JP5284438B2/ja not_active Expired - Fee Related
-
2012
- 2012-01-13 EP EP12151095.2A patent/EP2487715B1/en not_active Not-in-force
- 2012-02-01 KR KR1020120010273A patent/KR101476497B1/ko not_active Expired - Fee Related
- 2012-02-02 US US13/365,055 patent/US9224777B2/en not_active Expired - Fee Related
- 2012-02-06 CN CN201210024736.3A patent/CN102637703B/zh not_active Expired - Fee Related
- 2012-02-07 BR BRBR102012002818-2A patent/BR102012002818A2/pt not_active Application Discontinuation
- 2012-02-08 RU RU2012104496/28A patent/RU2497233C2/ru not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1745478A (zh) * | 2002-12-13 | 2006-03-08 | 索尼株式会社 | 固态成像装置及其制造方法 |
| CN101425525A (zh) * | 2007-10-29 | 2009-05-06 | 株式会社东芝 | 半导体器件及其制造方法 |
| CN101714567A (zh) * | 2008-09-29 | 2010-05-26 | 索尼株式会社 | 固体摄像装置及其制造方法以及电子仪器 |
| JP2010283145A (ja) * | 2009-06-04 | 2010-12-16 | Sony Corp | 固体撮像素子及びその製造方法、電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| RU2497233C2 (ru) | 2013-10-27 |
| KR101476497B1 (ko) | 2014-12-24 |
| EP2487715A2 (en) | 2012-08-15 |
| KR20120092021A (ko) | 2012-08-20 |
| JP2012182431A (ja) | 2012-09-20 |
| US20120202310A1 (en) | 2012-08-09 |
| BR102012002818A2 (pt) | 2013-07-23 |
| CN102637703A (zh) | 2012-08-15 |
| EP2487715A3 (en) | 2013-02-27 |
| EP2487715B1 (en) | 2015-03-25 |
| US9224777B2 (en) | 2015-12-29 |
| JP5284438B2 (ja) | 2013-09-11 |
| RU2012104496A (ru) | 2013-08-20 |
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Granted publication date: 20160316 Termination date: 20210206 |