JP5284438B2 - 固体撮像装置、及び固体撮像装置の製造方法 - Google Patents

固体撮像装置、及び固体撮像装置の製造方法 Download PDF

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Publication number
JP5284438B2
JP5284438B2 JP2011223302A JP2011223302A JP5284438B2 JP 5284438 B2 JP5284438 B2 JP 5284438B2 JP 2011223302 A JP2011223302 A JP 2011223302A JP 2011223302 A JP2011223302 A JP 2011223302A JP 5284438 B2 JP5284438 B2 JP 5284438B2
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Japan
Prior art keywords
solid
imaging device
state imaging
silicon nitride
film
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Expired - Fee Related
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JP2011223302A
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English (en)
Japanese (ja)
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JP2012182431A (ja
JP2012182431A5 (enExample
Inventor
忠志 澤山
博志 猪鹿倉
隆治 近藤
徹 江藤
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2011223302A priority Critical patent/JP5284438B2/ja
Priority to EP12151095.2A priority patent/EP2487715B1/en
Priority to KR1020120010273A priority patent/KR101476497B1/ko
Priority to US13/365,055 priority patent/US9224777B2/en
Priority to CN201210024736.3A priority patent/CN102637703B/zh
Priority to BRBR102012002818-2A priority patent/BR102012002818A2/pt
Priority to RU2012104496/28A priority patent/RU2497233C2/ru
Publication of JP2012182431A publication Critical patent/JP2012182431A/ja
Publication of JP2012182431A5 publication Critical patent/JP2012182431A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
  • Chemical Vapour Deposition (AREA)
JP2011223302A 2011-02-09 2011-10-07 固体撮像装置、及び固体撮像装置の製造方法 Expired - Fee Related JP5284438B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2011223302A JP5284438B2 (ja) 2011-02-09 2011-10-07 固体撮像装置、及び固体撮像装置の製造方法
EP12151095.2A EP2487715B1 (en) 2011-02-09 2012-01-13 Solid-state image pickup device and method for manufacturing solid-state image pickup device
KR1020120010273A KR101476497B1 (ko) 2011-02-09 2012-02-01 고체 촬상 장치 및 고체 촬상 장치의 제조 방법
US13/365,055 US9224777B2 (en) 2011-02-09 2012-02-02 Solid-state image pickup device and method for manufacturing solid-state image pickup device
CN201210024736.3A CN102637703B (zh) 2011-02-09 2012-02-06 固态图像拾取设备和用于制造固态图像拾取设备的方法
BRBR102012002818-2A BR102012002818A2 (pt) 2011-02-09 2012-02-07 mÉtodo para fabricar um dispositivo de captura de imagem de estado sàlido, e, dispositivo de captura de imagem de estado sàlido
RU2012104496/28A RU2497233C2 (ru) 2011-02-09 2012-02-08 Твердотельное устройство захвата изображений и способ для изготовления твердотельного устройства захвата изображений

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011026346 2011-02-09
JP2011026346 2011-02-09
JP2011223302A JP5284438B2 (ja) 2011-02-09 2011-10-07 固体撮像装置、及び固体撮像装置の製造方法

Publications (3)

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JP2012182431A JP2012182431A (ja) 2012-09-20
JP2012182431A5 JP2012182431A5 (enExample) 2013-05-16
JP5284438B2 true JP5284438B2 (ja) 2013-09-11

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JP2011223302A Expired - Fee Related JP5284438B2 (ja) 2011-02-09 2011-10-07 固体撮像装置、及び固体撮像装置の製造方法

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Country Link
US (1) US9224777B2 (enExample)
EP (1) EP2487715B1 (enExample)
JP (1) JP5284438B2 (enExample)
KR (1) KR101476497B1 (enExample)
CN (1) CN102637703B (enExample)
BR (1) BR102012002818A2 (enExample)
RU (1) RU2497233C2 (enExample)

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JP2012182426A (ja) * 2011-02-09 2012-09-20 Canon Inc 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法
US20120267741A1 (en) * 2011-04-21 2012-10-25 Panasonic Corporation Solid-state imaging device and method for manufacturing the same
US20140187045A1 (en) * 2013-01-02 2014-07-03 Applied Materials, Inc. Silicon nitride gapfill implementing high density plasma
JP6136663B2 (ja) * 2013-07-04 2017-05-31 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP6465545B2 (ja) 2013-09-27 2019-02-06 ソニー株式会社 撮像素子およびその製造方法ならびに電子機器
TWI571626B (zh) 2015-07-15 2017-02-21 力晶科技股份有限公司 具有奈米腔的集成生物感測器及其製作方法
JP2017069553A (ja) 2015-09-30 2017-04-06 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
US10375338B2 (en) * 2017-02-01 2019-08-06 Omnivision Technologies, Inc. Two stage amplifier readout circuit in pixel level hybrid bond image sensors

Family Cites Families (20)

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JPH0745601A (ja) * 1993-07-27 1995-02-14 Fuji Electric Co Ltd プラズマｃｖｄ成膜方法およびその装置
JPH0992813A (ja) * 1995-09-27 1997-04-04 Sony Corp 固体撮像素子とその製造方法
JP2001176866A (ja) * 1999-10-28 2001-06-29 Texas Instr Inc <Ti> 集積回路の製造方法
US20030110808A1 (en) * 2001-12-14 2003-06-19 Applied Materials Inc., A Delaware Corporation Method of manufacturing an optical core
JP4427949B2 (ja) 2002-12-13 2010-03-10 ソニー株式会社 固体撮像素子及びその製造方法
JP2005251804A (ja) * 2004-03-01 2005-09-15 Canon Inc 撮像素子
JP2006120845A (ja) * 2004-10-21 2006-05-11 Canon Inc 光電変換装置およびその製造方法
US7592645B2 (en) * 2004-12-08 2009-09-22 Canon Kabushiki Kaisha Photoelectric conversion device and method for producing photoelectric conversion device
JP2007201162A (ja) * 2006-01-26 2007-08-09 Fujifilm Corp 固体撮像素子の製造方法および固体撮像素子
US7524690B2 (en) * 2006-08-10 2009-04-28 United Microelectronics Corp. Image sensor with a waveguide tube and a related fabrication method
EP1930950B1 (en) * 2006-12-08 2012-11-07 Sony Corporation Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
KR20080111624A (ko) * 2007-06-19 2008-12-24 삼성전자주식회사 플라즈마 식각장치 및 이를 이용한 챔버 세정방법
JP4852016B2 (ja) 2007-10-29 2012-01-11 株式会社東芝 半導体装置及びその製造方法
US7704897B2 (en) * 2008-02-22 2010-04-27 Applied Materials, Inc. HDP-CVD SiON films for gap-fill
JP5402083B2 (ja) * 2008-09-29 2014-01-29 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
KR20100037208A (ko) 2008-10-01 2010-04-09 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
KR101561862B1 (ko) * 2008-12-26 2015-10-21 삼성전자 주식회사 반도체 집적 회로 장치의 제조 방법
JP5644057B2 (ja) * 2009-03-12 2014-12-24 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
JP5434252B2 (ja) * 2009-05-14 2014-03-05 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP2010283145A (ja) 2009-06-04 2010-12-16 Sony Corp 固体撮像素子及びその製造方法、電子機器

Also Published As

Publication number Publication date
CN102637703B (zh) 2016-03-16
RU2497233C2 (ru) 2013-10-27
KR101476497B1 (ko) 2014-12-24
EP2487715A2 (en) 2012-08-15
KR20120092021A (ko) 2012-08-20
JP2012182431A (ja) 2012-09-20
US20120202310A1 (en) 2012-08-09
BR102012002818A2 (pt) 2013-07-23
CN102637703A (zh) 2012-08-15
EP2487715A3 (en) 2013-02-27
EP2487715B1 (en) 2015-03-25
US9224777B2 (en) 2015-12-29
RU2012104496A (ru) 2013-08-20

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