RU2497233C2 - Твердотельное устройство захвата изображений и способ для изготовления твердотельного устройства захвата изображений - Google Patents

Твердотельное устройство захвата изображений и способ для изготовления твердотельного устройства захвата изображений Download PDF

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RU2497233C2
RU2497233C2 RU2012104496/28A RU2012104496A RU2497233C2 RU 2497233 C2 RU2497233 C2 RU 2497233C2 RU 2012104496/28 A RU2012104496/28 A RU 2012104496/28A RU 2012104496 A RU2012104496 A RU 2012104496A RU 2497233 C2 RU2497233 C2 RU 2497233C2
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stage
substrate
core
photoelectric conversion
conversion unit
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RU2012104496/28A
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Russian (ru)
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RU2012104496A (ru
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Тадаси САВАЯМА
Хироси ИКАКУРА
Такахару КОНДО
Тору ЭТО
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Кэнон Кабусики Кайся
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
  • Chemical Vapour Deposition (AREA)
RU2012104496/28A 2011-02-09 2012-02-08 Твердотельное устройство захвата изображений и способ для изготовления твердотельного устройства захвата изображений RU2497233C2 (ru)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011-026346 2011-02-09
JP2011026346 2011-02-09
JP2011223302A JP5284438B2 (ja) 2011-02-09 2011-10-07 固体撮像装置、及び固体撮像装置の製造方法
JP2011-223302 2011-10-07

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RU2012104496A RU2012104496A (ru) 2013-08-20
RU2497233C2 true RU2497233C2 (ru) 2013-10-27

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US (1) US9224777B2 (enExample)
EP (1) EP2487715B1 (enExample)
JP (1) JP5284438B2 (enExample)
KR (1) KR101476497B1 (enExample)
CN (1) CN102637703B (enExample)
BR (1) BR102012002818A2 (enExample)
RU (1) RU2497233C2 (enExample)

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US20120267741A1 (en) * 2011-04-21 2012-10-25 Panasonic Corporation Solid-state imaging device and method for manufacturing the same
US20140187045A1 (en) * 2013-01-02 2014-07-03 Applied Materials, Inc. Silicon nitride gapfill implementing high density plasma
JP6136663B2 (ja) * 2013-07-04 2017-05-31 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP6465545B2 (ja) 2013-09-27 2019-02-06 ソニー株式会社 撮像素子およびその製造方法ならびに電子機器
TWI571626B (zh) 2015-07-15 2017-02-21 力晶科技股份有限公司 具有奈米腔的集成生物感測器及其製作方法
JP2017069553A (ja) 2015-09-30 2017-04-06 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
US10375338B2 (en) * 2017-02-01 2019-08-06 Omnivision Technologies, Inc. Two stage amplifier readout circuit in pixel level hybrid bond image sensors

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JP4427949B2 (ja) 2002-12-13 2010-03-10 ソニー株式会社 固体撮像素子及びその製造方法
JP2006120845A (ja) * 2004-10-21 2006-05-11 Canon Inc 光電変換装置およびその製造方法
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JPH0992813A (ja) * 1995-09-27 1997-04-04 Sony Corp 固体撮像素子とその製造方法
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Also Published As

Publication number Publication date
CN102637703B (zh) 2016-03-16
KR101476497B1 (ko) 2014-12-24
EP2487715A2 (en) 2012-08-15
KR20120092021A (ko) 2012-08-20
JP2012182431A (ja) 2012-09-20
US20120202310A1 (en) 2012-08-09
BR102012002818A2 (pt) 2013-07-23
CN102637703A (zh) 2012-08-15
EP2487715A3 (en) 2013-02-27
EP2487715B1 (en) 2015-03-25
US9224777B2 (en) 2015-12-29
JP5284438B2 (ja) 2013-09-11
RU2012104496A (ru) 2013-08-20

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