KR101476497B1 - 고체 촬상 장치 및 고체 촬상 장치의 제조 방법 - Google Patents

고체 촬상 장치 및 고체 촬상 장치의 제조 방법 Download PDF

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Publication number
KR101476497B1
KR101476497B1 KR1020120010273A KR20120010273A KR101476497B1 KR 101476497 B1 KR101476497 B1 KR 101476497B1 KR 1020120010273 A KR1020120010273 A KR 1020120010273A KR 20120010273 A KR20120010273 A KR 20120010273A KR 101476497 B1 KR101476497 B1 KR 101476497B1
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substrate
core
solid
photoelectric conversion
conversion unit
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KR20120092021A (ko
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다다시 사와야마
히로시 이까꾸라
다까하루 곤도
도루 에또
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캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020120010273A 2011-02-09 2012-02-01 고체 촬상 장치 및 고체 촬상 장치의 제조 방법 Expired - Fee Related KR101476497B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011026346 2011-02-09
JPJP-P-2011-026346 2011-02-09
JP2011223302A JP5284438B2 (ja) 2011-02-09 2011-10-07 固体撮像装置、及び固体撮像装置の製造方法
JPJP-P-2011-223302 2011-10-07

Publications (2)

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KR20120092021A KR20120092021A (ko) 2012-08-20
KR101476497B1 true KR101476497B1 (ko) 2014-12-24

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US (1) US9224777B2 (enExample)
EP (1) EP2487715B1 (enExample)
JP (1) JP5284438B2 (enExample)
KR (1) KR101476497B1 (enExample)
CN (1) CN102637703B (enExample)
BR (1) BR102012002818A2 (enExample)
RU (1) RU2497233C2 (enExample)

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JP2012182426A (ja) * 2011-02-09 2012-09-20 Canon Inc 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法
US20120267741A1 (en) * 2011-04-21 2012-10-25 Panasonic Corporation Solid-state imaging device and method for manufacturing the same
US20140187045A1 (en) * 2013-01-02 2014-07-03 Applied Materials, Inc. Silicon nitride gapfill implementing high density plasma
JP6136663B2 (ja) * 2013-07-04 2017-05-31 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP6465545B2 (ja) 2013-09-27 2019-02-06 ソニー株式会社 撮像素子およびその製造方法ならびに電子機器
TWI571626B (zh) 2015-07-15 2017-02-21 力晶科技股份有限公司 具有奈米腔的集成生物感測器及其製作方法
JP2017069553A (ja) 2015-09-30 2017-04-06 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
US10375338B2 (en) * 2017-02-01 2019-08-06 Omnivision Technologies, Inc. Two stage amplifier readout circuit in pixel level hybrid bond image sensors

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JP2006120845A (ja) * 2004-10-21 2006-05-11 Canon Inc 光電変換装置およびその製造方法
KR20080111624A (ko) * 2007-06-19 2008-12-24 삼성전자주식회사 플라즈마 식각장치 및 이를 이용한 챔버 세정방법
US20090215281A1 (en) * 2008-02-22 2009-08-27 Applied Materials, Inc. Hdp-cvd sion films for gap-fill
KR20100036200A (ko) * 2008-09-29 2010-04-07 소니 주식회사 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기

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JPH0745601A (ja) * 1993-07-27 1995-02-14 Fuji Electric Co Ltd プラズマｃｖｄ成膜方法およびその装置
JPH0992813A (ja) * 1995-09-27 1997-04-04 Sony Corp 固体撮像素子とその製造方法
JP2001176866A (ja) * 1999-10-28 2001-06-29 Texas Instr Inc <Ti> 集積回路の製造方法
US20030110808A1 (en) * 2001-12-14 2003-06-19 Applied Materials Inc., A Delaware Corporation Method of manufacturing an optical core
JP4427949B2 (ja) 2002-12-13 2010-03-10 ソニー株式会社 固体撮像素子及びその製造方法
JP2005251804A (ja) * 2004-03-01 2005-09-15 Canon Inc 撮像素子
US7592645B2 (en) * 2004-12-08 2009-09-22 Canon Kabushiki Kaisha Photoelectric conversion device and method for producing photoelectric conversion device
JP2007201162A (ja) * 2006-01-26 2007-08-09 Fujifilm Corp 固体撮像素子の製造方法および固体撮像素子
US7524690B2 (en) * 2006-08-10 2009-04-28 United Microelectronics Corp. Image sensor with a waveguide tube and a related fabrication method
EP1930950B1 (en) * 2006-12-08 2012-11-07 Sony Corporation Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera
JP4852016B2 (ja) 2007-10-29 2012-01-11 株式会社東芝 半導体装置及びその製造方法
KR20100037208A (ko) 2008-10-01 2010-04-09 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
KR101561862B1 (ko) * 2008-12-26 2015-10-21 삼성전자 주식회사 반도체 집적 회로 장치의 제조 방법
JP5644057B2 (ja) * 2009-03-12 2014-12-24 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
JP5434252B2 (ja) * 2009-05-14 2014-03-05 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
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JP2006120845A (ja) * 2004-10-21 2006-05-11 Canon Inc 光電変換装置およびその製造方法
KR20080111624A (ko) * 2007-06-19 2008-12-24 삼성전자주식회사 플라즈마 식각장치 및 이를 이용한 챔버 세정방법
US20090215281A1 (en) * 2008-02-22 2009-08-27 Applied Materials, Inc. Hdp-cvd sion films for gap-fill
KR20100036200A (ko) * 2008-09-29 2010-04-07 소니 주식회사 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기

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Publication number Publication date
CN102637703B (zh) 2016-03-16
RU2497233C2 (ru) 2013-10-27
EP2487715A2 (en) 2012-08-15
KR20120092021A (ko) 2012-08-20
JP2012182431A (ja) 2012-09-20
US20120202310A1 (en) 2012-08-09
BR102012002818A2 (pt) 2013-07-23
CN102637703A (zh) 2012-08-15
EP2487715A3 (en) 2013-02-27
EP2487715B1 (en) 2015-03-25
US9224777B2 (en) 2015-12-29
JP5284438B2 (ja) 2013-09-11
RU2012104496A (ru) 2013-08-20

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