BR102012002818A2 - mÉtodo para fabricar um dispositivo de captura de imagem de estado sàlido, e, dispositivo de captura de imagem de estado sàlido - Google Patents
mÉtodo para fabricar um dispositivo de captura de imagem de estado sàlido, e, dispositivo de captura de imagem de estado sàlido Download PDFInfo
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- BR102012002818A2 BR102012002818A2 BRBR102012002818-2A BR102012002818A BR102012002818A2 BR 102012002818 A2 BR102012002818 A2 BR 102012002818A2 BR 102012002818 A BR102012002818 A BR 102012002818A BR 102012002818 A2 BR102012002818 A2 BR 102012002818A2
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- solid state
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- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000007787 solid Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 238000003384 imaging method Methods 0.000 claims abstract description 46
- 238000006243 chemical reaction Methods 0.000 claims abstract description 35
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 30
- 238000000576 coating method Methods 0.000 claims abstract description 21
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000005234 chemical deposition Methods 0.000 claims abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 21
- 230000000694 effects Effects 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 229910007991 Si-N Inorganic materials 0.000 claims description 2
- 229910006294 Si—N Inorganic materials 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 36
- 239000010410 layer Substances 0.000 description 25
- 230000000875 corresponding effect Effects 0.000 description 24
- 239000011229 interlayer Substances 0.000 description 18
- 239000000126 substance Substances 0.000 description 16
- 238000012546 transfer Methods 0.000 description 16
- 239000011800 void material Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 239000002131 composite material Substances 0.000 description 9
- 238000009825 accumulation Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000005036 potential barrier Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000009987 spinning Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 150000003658 tungsten compounds Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011026346 | 2011-02-09 | ||
| JP2011223302A JP5284438B2 (ja) | 2011-02-09 | 2011-10-07 | 固体撮像装置、及び固体撮像装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR102012002818A2 true BR102012002818A2 (pt) | 2013-07-23 |
Family
ID=45463485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRBR102012002818-2A BR102012002818A2 (pt) | 2011-02-09 | 2012-02-07 | mÉtodo para fabricar um dispositivo de captura de imagem de estado sàlido, e, dispositivo de captura de imagem de estado sàlido |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9224777B2 (enExample) |
| EP (1) | EP2487715B1 (enExample) |
| JP (1) | JP5284438B2 (enExample) |
| KR (1) | KR101476497B1 (enExample) |
| CN (1) | CN102637703B (enExample) |
| BR (1) | BR102012002818A2 (enExample) |
| RU (1) | RU2497233C2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012182426A (ja) * | 2011-02-09 | 2012-09-20 | Canon Inc | 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法 |
| US20120267741A1 (en) * | 2011-04-21 | 2012-10-25 | Panasonic Corporation | Solid-state imaging device and method for manufacturing the same |
| US20140187045A1 (en) * | 2013-01-02 | 2014-07-03 | Applied Materials, Inc. | Silicon nitride gapfill implementing high density plasma |
| JP6136663B2 (ja) * | 2013-07-04 | 2017-05-31 | ソニー株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
| JP6465545B2 (ja) | 2013-09-27 | 2019-02-06 | ソニー株式会社 | 撮像素子およびその製造方法ならびに電子機器 |
| TWI571626B (zh) | 2015-07-15 | 2017-02-21 | 力晶科技股份有限公司 | 具有奈米腔的集成生物感測器及其製作方法 |
| JP2017069553A (ja) | 2015-09-30 | 2017-04-06 | キヤノン株式会社 | 固体撮像装置、その製造方法及びカメラ |
| US10375338B2 (en) * | 2017-02-01 | 2019-08-06 | Omnivision Technologies, Inc. | Two stage amplifier readout circuit in pixel level hybrid bond image sensors |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0745601A (ja) * | 1993-07-27 | 1995-02-14 | Fuji Electric Co Ltd | プラズマｃｖｄ成膜方法およびその装置 |
| JPH0992813A (ja) * | 1995-09-27 | 1997-04-04 | Sony Corp | 固体撮像素子とその製造方法 |
| JP2001176866A (ja) * | 1999-10-28 | 2001-06-29 | Texas Instr Inc <Ti> | 集積回路の製造方法 |
| US20030110808A1 (en) * | 2001-12-14 | 2003-06-19 | Applied Materials Inc., A Delaware Corporation | Method of manufacturing an optical core |
| JP4427949B2 (ja) | 2002-12-13 | 2010-03-10 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
| JP2005251804A (ja) * | 2004-03-01 | 2005-09-15 | Canon Inc | 撮像素子 |
| JP2006120845A (ja) * | 2004-10-21 | 2006-05-11 | Canon Inc | 光電変換装置およびその製造方法 |
| US7592645B2 (en) * | 2004-12-08 | 2009-09-22 | Canon Kabushiki Kaisha | Photoelectric conversion device and method for producing photoelectric conversion device |
| JP2007201162A (ja) * | 2006-01-26 | 2007-08-09 | Fujifilm Corp | 固体撮像素子の製造方法および固体撮像素子 |
| US7524690B2 (en) * | 2006-08-10 | 2009-04-28 | United Microelectronics Corp. | Image sensor with a waveguide tube and a related fabrication method |
| EP1930950B1 (en) * | 2006-12-08 | 2012-11-07 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
| KR20080111624A (ko) * | 2007-06-19 | 2008-12-24 | 삼성전자주식회사 | 플라즈마 식각장치 및 이를 이용한 챔버 세정방법 |
| JP4852016B2 (ja) | 2007-10-29 | 2012-01-11 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US7704897B2 (en) * | 2008-02-22 | 2010-04-27 | Applied Materials, Inc. | HDP-CVD SiON films for gap-fill |
| JP5402083B2 (ja) * | 2008-09-29 | 2014-01-29 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| KR20100037208A (ko) | 2008-10-01 | 2010-04-09 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조 방법 |
| KR101561862B1 (ko) * | 2008-12-26 | 2015-10-21 | 삼성전자 주식회사 | 반도체 집적 회로 장치의 제조 방법 |
| JP5644057B2 (ja) * | 2009-03-12 | 2014-12-24 | ソニー株式会社 | 固体撮像装置とその製造方法および撮像装置 |
| JP5434252B2 (ja) * | 2009-05-14 | 2014-03-05 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
| JP2010283145A (ja) | 2009-06-04 | 2010-12-16 | Sony Corp | 固体撮像素子及びその製造方法、電子機器 |
-
2011
- 2011-10-07 JP JP2011223302A patent/JP5284438B2/ja not_active Expired - Fee Related
-
2012
- 2012-01-13 EP EP12151095.2A patent/EP2487715B1/en not_active Not-in-force
- 2012-02-01 KR KR1020120010273A patent/KR101476497B1/ko not_active Expired - Fee Related
- 2012-02-02 US US13/365,055 patent/US9224777B2/en not_active Expired - Fee Related
- 2012-02-06 CN CN201210024736.3A patent/CN102637703B/zh not_active Expired - Fee Related
- 2012-02-07 BR BRBR102012002818-2A patent/BR102012002818A2/pt not_active Application Discontinuation
- 2012-02-08 RU RU2012104496/28A patent/RU2497233C2/ru not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN102637703B (zh) | 2016-03-16 |
| RU2497233C2 (ru) | 2013-10-27 |
| KR101476497B1 (ko) | 2014-12-24 |
| EP2487715A2 (en) | 2012-08-15 |
| KR20120092021A (ko) | 2012-08-20 |
| JP2012182431A (ja) | 2012-09-20 |
| US20120202310A1 (en) | 2012-08-09 |
| CN102637703A (zh) | 2012-08-15 |
| EP2487715A3 (en) | 2013-02-27 |
| EP2487715B1 (en) | 2015-03-25 |
| US9224777B2 (en) | 2015-12-29 |
| JP5284438B2 (ja) | 2013-09-11 |
| RU2012104496A (ru) | 2013-08-20 |
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| Date | Code | Title | Description |
|---|---|---|---|
| B03A | Publication of a patent application or of a certificate of addition of invention [chapter 3.1 patent gazette] | ||
| B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
| B06T | Formal requirements before examination [chapter 6.20 patent gazette] | ||
| B06A | Patent application procedure suspended [chapter 6.1 patent gazette] | ||
| B11B | Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements |