TWI541989B - 影像感測器及其製作方法 - Google Patents
影像感測器及其製作方法 Download PDFInfo
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- TWI541989B TWI541989B TW102103646A TW102103646A TWI541989B TW I541989 B TWI541989 B TW I541989B TW 102103646 A TW102103646 A TW 102103646A TW 102103646 A TW102103646 A TW 102103646A TW I541989 B TWI541989 B TW I541989B
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Description
本發明係有關於一種電子元件及其製作方法,特別是有關於一種影像感測器及其製作方法。
隨著技術的演進,互補金屬氧化物半導體(CMOS)影像感測器由於本身具有許多優點,其係比傳統的電荷耦合元件(CCD)更受到歡迎。特別是,互補金屬氧化物半導體影像感測器具有較高的影像擷取率(image acquisition rate),較低的操作電壓,較低的能耗和較高的抗雜訊度。此外,互補金屬氧化物半導體影像感測器可與例如邏輯和記憶元件之高積集度晶圓製程線上製作。因此,互補金屬氧化物半導體影像晶片可包括影像感測器和所有必須的邏輯元件(例如放大器)、邏輯/數位轉換器和類似的元件。
CMOS影像感測器一般是像素化(pixilated)金氧半導體。CMOS影像感測器一般包括光感測圖像單元(畫素)陣列,各陣列包括電晶體(開關電晶體或重設電晶體)、電容器和光感測單元(例如感光二極體)。CMOS影像感測器使用光感測CMOS電路,將光子轉換成電子。光感測CMOS電路一般包括形成於矽基底中之感光二極體。當感光二極體暴露於光中,感光二極體中係感應一電荷。各畫素中可產生與當光從一物像
(subject scene)入射畫素中與光量成比例的電子。更甚者,畫素中的電子係轉換成電壓訊號,且進一步藉由類比/數位轉換器轉變成數位訊號。複數個週邊電路可接收此數位訊號,將其處理,顯示一物像之影像。
CMOS影像感測器可包括複數個額外的層,例如介電層和內連線金屬層,形成於基底之頂部,其中內連線層係用來將感光二極體與周邊電路耦接。CMOS影像感測器具有額外層之一側一般稱為前側,而具有基底之一側稱為後側。依光路徑的不同,CMOS影像感測器可更進一步分為兩個種類:前側照光(front-side illuminated,FSI)影像感測器;後側照光(back-side illuminated,BSI)影像感測器。
在FSI影像感測器中,光係從一物像入射CMOS影像感測器之前側,穿過介電層和內連線層,最後落在感光二極體上。在BSI影像感測器中,光係入射CMOS影像感測器之後側。因此,光可經過一直接路徑照射感光二極體。
根據上述,本發明提供一種影像感測器之製作方法,包括:於一影像感測器基底之第一側形成一介電層,其中影像感測器基底包括一感光二極體;及以一紫外線對介電層進行曝光,其中在以紫外線對介電層進行曝光之過程中,介電層上方沒有設置光阻。
本發明提供一種影像感測器之製作方法,包括:於一基底上形成一感光二極體;沉積一介電結構於基底之第一側;將介電層進行曝光至一寬光譜紫外線,其中寬光譜紫外線
包括有數個波長的紫外線。
本發明提供一種影像感測器,包括:一基底,包括一感光二極體;一含少量電荷介電層,位於基底之第一側,含少量電荷介電層之總電荷產生橫越含少量電荷介電層之平均壓降少於0.2V。
10‧‧‧基底
12‧‧‧感光二極體
14‧‧‧晶胞p井區
16‧‧‧深p井區
18‧‧‧隔離區
20‧‧‧光阻保護層
22‧‧‧蝕刻停止層
24‧‧‧層間介電層
26‧‧‧金屬間介電層
28‧‧‧金屬間介電層
30‧‧‧金屬間介電層
32‧‧‧金屬間介電層
34‧‧‧第一鈍化層
36‧‧‧第二鈍化層
38‧‧‧金屬化圖案
40‧‧‧插塞
41‧‧‧載板
42‧‧‧P+層
44‧‧‧抗反射塗佈層
46‧‧‧彩色濾光層
48‧‧‧微透鏡層
60‧‧‧步驟
62‧‧‧步驟
64‧‧‧步驟
66‧‧‧步驟
第1圖顯示本發明一實施例影像感測器基底之剖面圖。
第2圖顯示具有各種介電層和形成於其上之金屬化圖案的影像感測器基底。
第3圖顯示本發明一實施例在第2圖之影像感測器基板在翻轉和接合一載板後之剖面圖。
第4圖顯示本發明一實施例在第2圖之影像感測器基板前側後續之製程,形成前側照射影像感測器之剖面圖。
第5圖揭示本發明一實施例形成影像感測器之方法。
第6A和6B圖顯示分別於紫外光曝光之前或之後以Quantox量測測得之結果。
以下詳細討論實施本發明之實施例。可以理解的是,實施例提供許多可應用的發明概念,其可以較廣的變化實施。所討論之特定實施例僅用來發明使用實施例的特定方法,而不用來限定發明的範疇。
以下會以特定的文字描述本發明的實施例(亦即前側照射影像感測器和後側照射影像感測器)。另外的實施例可
應用其它種類結構之影像感測器。雖然以下以特定的順序揭示形成影像感測器之方法,本發明形成影像感測器之方法可以任何順序形成。
第1圖揭示本發明一實施例影像感測器基底10之剖面圖。在一影像感測器陣列中可具有複數個畫素,各畫素可包括一感光二極體,形成於一半導體基底(例如矽)中。在一實施例中,基底10可包括從一P型基底塊材成長的P型磊晶層。為簡化,說明書僅揭示一個畫素,以清楚的顯示各實施例的細節。
如第1圖所示,畫素包括一感光二極體12,以一p型摻區雜區和一n型摻雜區形成。p型摻雜區可從晶圓之前側以一離子佈值製程形成,p型摻雜區可摻雜例如硼之摻雜材料。n型摻雜區可從晶圓之前側以一離子佈值製程形成,n型摻雜區可摻雜例如磷之摻雜材料。
形成晶胞p井區14(cell p-well,簡稱CPW)於感光二極體12之相對側,且形成深p井區16(deep p-well,簡稱DPW)於對應的CPW區14下。CPW區14和DPW區16係以p型摻雜材料(例如硼或類似的材料)形成。CPW區14之摻雜濃度一般大於DPW區16之摻雜濃度。
形成隔離區18於對應的CPW區14中,形成隔離區18之方法例如包括:蝕刻出一溝槽,使用高密度電漿化學氣相沉積法(簡稱HDP-CVD)於溝槽中填滿例如氧化物之介電材料,以形成一淺溝槽隔離結構。值得注意的是,第1圖僅是影像感測器基底10之範例,其他的實施例為包括另外構件之結構,其中另外之構件可為連同感光二極體12之電晶體的相似構
件。
第2圖揭示具有各種介電層和形成於其上之金屬化圖案的影像感測器基底10。形成一光阻保護層20(resist protective layer,簡稱RPL)於基底10上方,光阻保護層20可以為化學氣相沉積法(CVD)或類似之方法形成之氧化物。光阻保護層20可採用其他適合製程形成之材料。於光阻保護層20上形成一蝕刻停止層22(etch stop layer,簡稱ESL),蝕刻停止層22可以為化學氣相沉積法(CVD)或類似之方法沉積之氮化物,蝕刻停止層22可採用其他適合製程形成之材料。
於蝕刻停止層22上方形成一層間介電層24(inter-layer dielectric,簡稱ILD)。層間介電層24可以為氧化矽、硼磷矽玻璃(BPSG)、類似的材料或上述之組合,層間介電層24可以化學氣相沉積法(CVD)、高密度電漿化學氣相沉積法(HDP-CVD)、爐管沉積、類似的方法或上述之組合形成。可使用適合之微影技術於層間介電層24、蝕刻停止層22和光阻保護層20中形成接觸。舉例來說,可旋轉塗佈一光阻於層間介電層24上,且使用一光源曝光,對光阻進行圖案化。可使用圖案化之光阻作為罩幕,進行一蝕刻製程,刻出穿過層間介電層24、蝕刻停止層22和光阻保護層20之開口,至基底10中之圖樣(由於結構層中可有不同之材料,蝕刻製程可包括多個蝕刻步驟和多個蝕刻劑)。在移除光阻層之後,可以化學氣相沉積法(CVD)、原子層沉積法(ALD)、類似之方法或上述之組合,沉積一例如包括阻障層之金屬的導電材料於層間介電層24上方,且填入開口中。後續可進行一例如化學機械研磨法之研磨
製程,移除多餘的導電材料,於開口中留下接觸。
後續,於層間介電層24(ILD)上方形成金屬間介電層26、28、30和32(inter-metal dielectrics,簡稱IMD),金屬間介電層26、28、30和32中具有金屬化圖案38和插塞40(via),各金屬間介電層26、28、30和32可以是氧化矽、硼磷矽玻璃(BPSG)、類似的材料或上述之組合,金屬間介電層26、28、30和32可以化學氣相沉積法(CVD)、高密度電漿化學氣相沉積法(HDP-CVD)、爐管沉積、類似的方法或上述之組合形成。各金屬間介電層26、28、30和32中的插塞40和金屬化圖樣38可以例如鑲嵌製程形成。在一範例中,鑲嵌製程例如包括以下方法:於層間介電層(ILD)上沉積一光阻層,對光阻層進行曝光,以圖案化之光阻層作為罩幕,蝕刻出部分穿過金屬間介電層之插塞開口之開端;在移除光阻層後,於金屬間介電層上旋塗另一光阻層,且對其進行圖案化,使用光阻圖案作為罩幕,進行一蝕刻製程,蝕刻出穿過金屬間介電層之插塞開口,例如至其下之導電圖樣,且可蝕刻出一凹槽,以於金屬間介電層中形成金屬化圖案。以化學氣相沉積法(CVD)、原子層沉積法(ALD)、類似之方法或上述之組合,沉積一例如包括阻障層之金屬的導電材料於層間介電層上方,且填入插塞開口和金屬化凹槽中。後續可進行一例如化學機械研磨法之研磨及或拋光製程,移除多餘的導電材料,於分別於插塞開口和凹槽中留下插塞40和金屬化圖案38。金屬間介電層26、28、30和32與對應的插塞40和金屬化圖案38係依序形成。
形成一第一鈍化層34於金屬間介電層32之頂部上
方,且形成一第二鈍化層36於第一鈍化層34上方。鈍化層34、36可以是氮化矽或類似的材料,其可以化學氣相沉積法(CVD)或類似的技術沉積形成。值得注意的是,本發明其它實施例可導入以上沒有描述到的其它構件。舉例來說,蝕刻停止層可設置於層間介電層24和金屬間介電層26、28、30和32之各界面間。更甚者,本發明可使用更多或更少的金屬間介電層。
在一些實施例中,在形成層間介電層24和金屬間介電層26、28、30和32之各階段,包括介電層之結構係使用紫外線進行曝光。當形成各介電層、接觸、插塞和金屬化圖案後,載子可聚集於介電層上。一些載子包括固定電荷(Qf)、界面陷阱電荷(Qit)、主體陷阱電荷(Qot)、流動电荷(Qm)和表面電荷(Qsurt)。這些電荷可例如由於下列步驟聚集:離子佈植步驟、在反應離子蝕刻(RIE)中之電漿曝露(plasma exposure)步驟、光阻塗佈步驟或其它的步驟。若最終的結構存在這些大量的電荷,影像感測器之畫素會在沒有曝光(例如完全黑暗,如0 lux)之情形下作動。為了避免上述問題的發生,一或多個介電層可暴露在紫外光照射下,使一或多個介電層變得電性更穩定。
聚集於各介電層上之電荷可來自於介電層中的懸浮鍵(dangling bond)。可預測的是,藉由將上述介電層以紫外光進行曝光,紫外光照射可不僅影響原子,亦影響電子。吸收紫外光之懸浮鍵的電子可變成自由電子。自由電子後續可藉由再結合(recombination)或激發(excitation)變的更穩定。換句話說,紫外光照射可提供能量,增加原子之電轉換能(electronic transition energy),可使最高分子佔有軌域(highest occupied
molecular orbital)和最低分子佔有軌域(lowest occupied molecular orbital)變的更穩定的型態。此可減少或增加介電層中空位(vacancy)的數量。
本發明之實施例係考量在形成每個介電層後、形成所有的介電層後,或在形成各介電層和一些未曝光之介電層之後,進行紫外光曝光。本發明之實施例係考量在製程中的任何時點對各層進行紫外線曝光。更甚者,本發明可對各介電層曝光一次或是多次。根據一實施例,紫外線曝光是一涵蓋寬範圍之紫外線波長的寬光譜曝光。在一實施例中,紫外線曝光使用之紫外線波長範圍約200nm至約450nm,或更進一步約200nm至約250nm。在一實施例中,紫外線曝光之時間約2分鐘至約2小時,或更進一步約3分鐘至約5分鐘,或更進一步約200秒。在一實施例中,紫外線曝光時之壓力約為2torr至15torr。在一些實施例中,基板和紫外光間之間距可以約為200 miles至1000 miles。氣體流量例如Ar氣之流量約2000 sccm,He氣之流量約40000 sccm。其它製程參數可由本技術領域之通常知識者進行例行之實驗得到。
根據一實施例,介電層在進行紫外光曝光後係僅含少量電荷。在一實施例中,含少量電荷之介電層具有一總電荷,其致橫越介電層之平均壓降小於0.2V。在一測試之實施例中,在進行紫外光曝光前,介電層具有一總電荷,其致橫越介電層之平均壓降為3.28V,最大壓降為3.54V,最小壓降為2.42V。在紫外光曝光之後,介電層之平均壓降為0.156V,最大壓降為0.189V,最小壓降為0.116V。在另一實施例中,在紫
外光曝光之後,介電層之平均壓降為0.181V,最大壓降為0.467V,最小壓降為0.107V。
第3圖揭示本發明一實施例在第2圖之影像感測器基板10在翻轉和接合一載板41後之剖面圖。如第3圖所示,影像感測器基板10係用來形成背照射影像感測器。在形成第2圖中所揭示之層間介電層26、28、30和32和鈍化層34、36之後,將影像感測器基板10翻轉,並接合至載板41上,其中載板41可以是矽、玻璃或類似的材料。影像感測器基板10之前側係面向載板41。影像感測器基板10和載板41之接合可使用各種的接合技術。在一實施例中,適合之接合技術可包括黏著接合、真空接合、陽極接合或類似的技術。載板41可提供足夠的機械支撐,以承受薄化製程之研磨步驟。
對影像感測器基板10之背面進行薄化製程。在一實施例中,基板10係進行薄化,直到移除重摻雜P型基板,且暴露輕摻雜P型磊晶層。一薄基板10可允許更多的光穿過基板10,且射入鑲嵌在基板中的感光二極體12,而不會被基板10吸收。本發明可使用適合之技術進行薄化製程,例如研磨、拋光及/或化學蝕刻。
形成一薄之P+層42於基板10之背部。薄之P+層42可形成於薄化之基板的背部,以增加光子轉換成電子之數量。用來形成P+層42之P+離子佈植製程可導致晶體缺陷(crystal defect)。為修復晶體缺陷和和活化佈植之P+離子,可於影像感測器基板10之背面進行一雷射退火製程。
形成一抗反射塗佈層44(ARC)於P+層42上方。抗反
射塗佈層44可以是氮化矽或類似的材料,其可以化學氣相製程或類似之技術形成。形成一彩色濾光層46於抗反射塗佈層44上方。彩色濾光層46可用來允許特定波長的光穿過,而反射其它波長的光,藉以使影像感測器決定感光二極體12接收光之顏色。彩色濾光層46可變更為紅色、綠色和藍色濾光層。另外,彩色濾光層46可以使用其它顏色之組合,例如青綠色、黃色和品紅色。彩色濾光層之顏色的數量亦可變化。彩色濾光層46可包括顏料或染料之材料,例如丙烯酸(acrylic)之材料。舉例來說,添加顏料或染料之聚甲基丙烯酸甲酯(PMMA)或甲基丙烯酸缩水甘油酯(PGMS)是適合形成彩色濾光層46之材料。然而,本發明可使用其它適合之材料。彩色濾光層46可以任何適合之方法形成。
形成微透鏡層48於彩色濾光層46上方。微透鏡層48可以任何可圖案化且形成透鏡的材料形成,例如高穿透之丙烯酸聚合物。在一實施例中,可使用液態之材料和旋轉塗佈之技術形成微透鏡層48。此方法已發現為可製作出大體上平坦之表面和大體上均勻厚度之微透鏡層48,藉以提供微透鏡較大的均勻度。本發明另可使用其它沉積技術,例如化學氣相沉積法(CVD)、物理氣相沉積法(PVD)或類似之方法。
第4圖揭示本發明一實施例在第2圖之影像感測器基板10前側後續之製程,形成前側照射影像感測器之剖面圖。形成抗反射層44於第二鈍化層36上。抗反射層44可與上述第3圖之抗反射層採用相同或相似的材料,且以相同或相似的製程形成。形成一彩色濾光層46於抗反射層44上方,且形成一微透
鏡層48於彩色濾光層46上方。彩色濾光層46和微透鏡層48可與上述第3圖之彩色濾光層和微透鏡層採用相同或相似的材料,且以相同或相似的製程形成。
第5圖揭示本發明一實施例形成影像感測器之方法。在步驟60,形成一介電層於影像感測器基板上方。介電層可以是光阻保護層20(RPL)、蝕刻停止層22(ESL)、層間介電層24(ILD)、金屬間介電層26、28、30和32(IMD)或鈍化層34、36。介電層中可具有例如接觸、插塞及/或金屬化圖案之構件。在步驟62,如關於第2圖所討論的,以紫外光對介電層進行曝光。在步驟64,以例如Quantox進行量測,量測介電層之總電荷。在步驟66,如有需要,重複步驟60、62、64之任何步驟。舉例來說,若測得之總電荷不在需求之範圍內,再次進行步驟62,對介電層進行紫外光曝光。更甚者,可形成額外之介電層,且可在形成在介電層之後,立即對其進行紫外線曝光,或可形成全體介電層之後進行紫外線曝光。
第6A和6B圖顯示分別於紫外光曝光之前或之後以Quantox量測測得之結果。在第6A圖中,係以Quantox量測形成於影像感測器基板上介電層5個位置的總電荷。如圖所示,在進行紫外光照射之前,不同的位置Quantox量測到變動之累積電荷數值。在第6B圖中,在進行紫外光照射之後,不同的位置Quantox量測到較均勻之電荷,且累積之總電荷較低。
本發明一實施例揭示一種方法,包括:於一影像感測器基底之第一側形成一介電層,其中影像感測器基底包括一感光二極體;及以一紫外線對介電層進行曝光,其中在以紫
外線對介電層進行曝光之過程中,介電層上方沒有設置光阻。
本發明另一實施例揭示一種方法,包括:於一基底上形成一感光二極體;沉積一介電結構於基底之第一側;將介電層進行曝光至一寬光譜紫外線,其中寬光譜紫外線包括有數個波長的紫外線。
本發明另一實施例揭示一種結構,包括:一基底,包括一感光二極體;一含少量電荷介電層,位於基底之第一側,含少量電荷介電層之總電荷產生橫越含少量電荷介電層之平均壓降少於0.2V。
雖然本發明之較佳實施例說明如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
60、62、64、66‧‧‧步驟
Claims (14)
- 一種影像感測器之製作方法,包括:於一影像感測器基底之第一側形成一介電層,其中該影像感測器基底包括一感光二極體;接合該影像感測器基底之第一側至一載板,該介電層設置於該影像感測器基底和該載板之間;及於該接合之後,以一寬光譜紫外線對該介電層進行曝光,其中在以該寬光譜紫外線對該介電層進行曝光之過程中,該介電層上方沒有設置光阻。
- 如申請專利範圍第1項所述之影像感測器之製作方法,其中該寬光譜紫外線包括波長介於200nm至250nm之間的射線。
- 如申請專利範圍第1項所述之影像感測器之製作方法,其中複數個介電層係位於該介電層和該影像感測器基底間,且在以該寬光譜紫外線對該介電層曝光的過程中,該些介電層亦被該寬光譜紫外線曝光。
- 如申請專利範圍第1項所述之影像感測器之製作方法,更包括於該介電層上形成一彩色濾光層。
- 如申請專利範圍第1項所述之影像感測器之製作方法,更包括於該影像感測器基底之第二側形成一彩色濾光層和一透鏡,該第二側係相對於該第一側。
- 一種影像感測器之製作方法,包括:於一基底上形成一感光二極體;沉積一介電結構於該基底之第一側;接合該基底之第一側至一載板,該介電結構設置於該基底和 該載板之間;及於該接合之後,以一寬光譜紫外線對該介電結構進行曝光,其中該寬光譜紫外線為包括有數個波長的紫外線。
- 如申請專利範圍第6項所述之影像感測器之製作方法,其中該寬光譜紫外線為波長範圍為200nm~250nm之紫外線。
- 如申請專利範圍第6項所述之影像感測器之製作方法,其中該介電結構包括複數個介電層。
- 如申請專利範圍第6項所述之影像感測器之製作方法,其中將該介電層進行曝光至寬光譜紫外線的步驟中,沒有光阻位於該介電結構上。
- 一種影像感測器,包括:一基底,包括一感光二極體;及一含少量電荷介電層,位於該基底之第一側,該含少量電荷介電層之總電荷產生橫越該含少量電荷介電層之一平均壓降,該平均壓降少於0.2V。
- 如申請專利範圍第10項所述之影像感測器,更包括複數個含少量電荷介電層。
- 如申請專利範圍第10項所述之影像感測器,其中該含少量電荷介電層是一層間介電層或一金屬間介電層。
- 如申請專利範圍第10項所述之影像感測器,更包括:一彩色濾光層;及一透鏡,其中彩色濾光層係位於該含少量電荷介電層和該透鏡間。
- 如申請專利範圍第10項所述之影像感測器,更包括: 一彩色濾光層,位於該基底之第二側上,其中該第二側係相對於該第一側;及一透鏡,位於該彩色濾光層上。
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US8736006B1 (en) * | 2013-03-14 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside structure for a BSI image sensor device |
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US9887228B2 (en) | 2014-01-20 | 2018-02-06 | Himax Imaging, Inc. | Image sensor with oblique pick up plug and semiconductor structure comprising the same |
CN104867952B (zh) * | 2015-04-30 | 2018-08-24 | 中国电子科技集团公司第四十四研究所 | 提高硅基背照式图像传感器紫外光响应的方法 |
US9923003B2 (en) | 2015-06-30 | 2018-03-20 | Microsoft Technology Licensing, Llc | CMOS image sensor with a reduced likelihood of an induced electric field in the epitaxial layer |
US10014333B2 (en) * | 2015-08-26 | 2018-07-03 | Semiconductor Components Industries, Llc | Back-side illuminated pixels with interconnect layers |
US10418402B2 (en) * | 2017-11-30 | 2019-09-17 | Stmicroelectronics (Research & Development) Limited | Near ultraviolet photocell |
TWI646678B (zh) * | 2017-12-07 | 2019-01-01 | 晶相光電股份有限公司 | 影像感測裝置 |
CN108666333A (zh) * | 2018-05-02 | 2018-10-16 | 德淮半导体有限公司 | 减少背照式图像传感器暗电流的方法 |
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JP4779320B2 (ja) | 2004-08-10 | 2011-09-28 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
US8454750B1 (en) * | 2005-04-26 | 2013-06-04 | Novellus Systems, Inc. | Multi-station sequential curing of dielectric films |
US7482265B2 (en) | 2006-01-10 | 2009-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | UV curing of low-k porous dielectrics |
US10037905B2 (en) | 2009-11-12 | 2018-07-31 | Novellus Systems, Inc. | UV and reducing treatment for K recovery and surface clean in semiconductor processing |
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US7902618B2 (en) | 2008-11-17 | 2011-03-08 | Omni Vision Technologies, Inc. | Backside illuminated imaging sensor with improved angular response |
US8278690B2 (en) * | 2010-04-27 | 2012-10-02 | Omnivision Technologies, Inc. | Laser anneal for image sensors |
JP2012004401A (ja) | 2010-06-18 | 2012-01-05 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
US9123608B2 (en) * | 2011-12-09 | 2015-09-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside illuminated CMOS image sensor |
US9356059B2 (en) * | 2011-12-15 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | BSI image sensor chips and methods for forming the same |
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