CN102598317A - 多孔氮化物半导体上的高品质非极性/半极性半导体器件及其制造方法 - Google Patents

多孔氮化物半导体上的高品质非极性/半极性半导体器件及其制造方法 Download PDF

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CN102598317A
CN102598317A CN2010800466035A CN201080046603A CN102598317A CN 102598317 A CN102598317 A CN 102598317A CN 2010800466035 A CN2010800466035 A CN 2010800466035A CN 201080046603 A CN201080046603 A CN 201080046603A CN 102598317 A CN102598317 A CN 102598317A
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nitride semiconductor
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南玉铉
李东轩
俞根镐
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Seoul Viosys Co Ltd
Industry Academic Cooperation Foundation of Korea Polytechnic University
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Seoul Optodevice Co Ltd
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Abstract

提供了一种非极性/半极性半导体器件及其制造方法，该非极性/半极性半导体器件具有降低的氮化物半导体层的缺陷密度及提高的内部量子效率和光提取效率。用于制造半导体器件的方法在具有用于生长非极性或半极性氮化物半导体层的晶面的蓝宝石基底、SiC基底或Si基底上形成模板层和半导体器件结构。所述制造方法包括：在基底上形成氮化物半导体层；执行多孔表面改性，使得氮化物半导体层具有多个孔；通过在表面改性的氮化物半导体层上再生长氮化物半导体层来形成模板层；以及在模板层上形成半导体器件结构。

Description

多孔氮化物半导体上的高品质非极性/半极性半导体器件及其制造方法
技术领域
本发明涉及一种半导体光学器件及其制造方法，更具体地讲，涉及一种高品质非极性/半极性半导体器件及其制造方法。在高品质非极性/半极性半导体器件中，在能够生长非极性/半极性氮化物半导体层的蓝宝石晶面上形成非极性/半极性氮化物半导体晶体，从而不会在氮化物半导体层中出现在极性氮化物半导体层中产生的压电效应。此外，在形成在蓝宝石基底上方的模板层上的多孔GaN层上再生长InxAlyGa1-x-yN层(0≤x≤1，0≤y≤1，0≤x+y≤1)，以降低GaN层的缺陷密度并改善GaN层的内部量子效率和光提取效率。
背景技术
由于诸如GaN的第III-V主族氮化物半导体(也被简称为“氮化物半导体”)具有优异的物理和化学性质，所以近来已经将第III-V主族氮化物半导体看作诸如发光二极管(LED)、激光二极管(LD)和太阳能电池的半导体光学器件的主要材料。通常第III-V主族氮化物半导体由具有实验式InxAlyGa1-x-yN(0≤x≤1，0≤y≤1，0≤x+y≤1)的半导体材料构成。这种氮化物半导体光学器件应用为诸如移动电话的键盘、电子显示板和照明装置之类的各种产品的光源。
具体地讲，随着使用LED或LD的数字产品的发展，对具有更高亮度和更高可靠性的氮化物半导体光学器件的需求增加。例如，由于移动电话的发展趋势为更纤薄，所以要求用作移动电话的背光的侧视型LED要更亮更薄。然而，如果在使用C面(例如，(0001)面)作为蓝宝石晶面的蓝宝石基底上生长诸如极性GaN的氮化物半导体，则由于形成极化场而导致的压电效应会降低内部量子效率。
因此，需要在蓝宝石基底上形成非极性/半极性氮化物半导体。然而，由于适于使用非极性/半极性GaN等形成模板层的蓝宝石与形成在蓝宝石上的非极性/半极性氮化物半导体模板层之间的晶格失配以及构成元件之间的热膨胀系数的差异，会导致诸如线缺陷和面缺陷的晶体缺陷。这样的晶体缺陷对光学器件的可靠性(例如，抗静电放电(ESD))产生不良影响，并且还导致光学器件内的电流泄漏。结果，光学器件的量子效率会降低，从而导致光学器件的性能劣化。
已经进行各种尝试来减少氮化物半导体层的晶体缺陷。各种尝试中的一种就是利用选择性外延生长。然而，这些尝试需要高成本和复杂的工艺，诸如SiO2掩模沉积。另外，可通过在蓝宝石基底上形成低温缓冲层，然后在低温缓冲层上形成GaN来减少晶体缺陷。然而，这并不足以解决光学器件的晶体缺陷问题。因此，需要解决由于晶体缺陷而导致光学器件的亮度和可靠性劣化的问题。
发明内容
技术目的
本发明的一方面在于提出一种高品质的非极性/半极性半导体器件及其制造方法。在该高品质的非极性/半极性半导体器件中，在能够生长非极性/半极性氮化物半导体层的蓝宝石晶面上形成氮化物半导体晶体，从而消除在极性GaN氮化物半导体中产生的压电效应。另外，在形成在蓝宝石基底上方的模板层上的多孔GaN层上再生长InxAlyGa1-x-yN层(0≤x≤1，0≤y≤1，0≤x+y≤1)，从而改善表面形貌、减少GaN层的缺陷并改善GaN层的晶体质量。因此，可以提高半导体器件的内部量子效率和光提取效率。
技术方案
根据本发明的实施例，一种制造在具有用于生长非极性或半极性氮化物半导体层的晶面的基底上形成模板层和半导体器件结构的半导体器件的方法包括：在基底上形成氮化物半导体层；执行多孔表面改性，使得氮化物半导体层具有多个孔；通过在表面改性的氮化物半导体层上再生长氮化物半导体层来形成模板层；以及在模板层上形成半导体器件结构。
在通过以上描述的方法制造的半导体器件中，在多孔表面改性之前的氮化物半导体层或再生长的氮化物半导体层可包括InxAlyGa1-x-yN(0≤x≤1，0≤y≤1，0≤x+y≤1)、未掺杂的GaN层、n型掺杂的GaN层或p型掺杂的GaN层。
基底可包括蓝宝石基底、SiC基底或Si基底。
基底的晶面可包括A面、M面或R面。
可利用湿蚀刻溶液来执行氮化物半导体层的多孔表面改性。可通过金属有机化学气相沉积(MOCVD)工艺来执行氮化物半导体层的多孔表面改性之前的氮化物半导体层的生长以及氮化物半导体层的多孔表面改性之后的氮化物半导体层的再生长。
湿蚀刻溶液可包括含有氢氧化钾、氢氧化钠、硫酸、磷酸、硝酸或盐酸且浓度范围为0.001M至2M的溶液。
在氮化物半导体层的多孔表面改性过程中，可将具有氮化物半导体层的带隙以上的能量的光照射在氮化物半导体层的表面上。
此外，如果需要，可在GaN层的多孔表面改性过程中，通过外部电源将电流施加到基底。可改变用于表面改性的蚀刻溶液的温度。
半导体器件可包括具有位于n型氮化物半导体层和p型氮化物半导体层之间的活性层的发光二极管。
半导体器件可包括诸如发光二极管、激光二极管、光检测器或太阳能电池的光学器件，或者可以包括诸如晶体管的电子器件。
本发明的效果
根据以上阐述的半导体器件及其制造方法，在形成在蓝宝石基底的能够生长非极性/半极性氮化物半导体层的蓝宝石晶面上的多孔GaN层上再生长GaN层，然后在再生长的GaN层上形成氮化物半导体光学器件。因此，GaN层可具有低的晶体缺陷密度，从而提高半导体器件的可靠性和性能(例如，亮度)。
附图说明
图1示出了用于解释蓝宝石基底的晶面的蓝宝石晶体结构。
图2示出了用于解释半极性氮化物半导体层的半极性GaN晶体结构。
图3是用于解释根据本发明实施例的在蓝宝石基底上形成多孔GaN层的工艺和使GaN层再生长的工艺的剖视图。
图4是用于解释根据本发明实施例的多孔GaN层的侧向生长的视图。
图5是通过图3中的工艺形成的GaN层的扫描电子显微(SEM)照片。
图6是用于解释根据本发明实施例的半导体光学器件的结构的剖视图。
图7是用于解释根据本发明实施例的在使GaN层沿平行于M方向的方向再生长之前和之后的X射线衍射(XRD)测量结果的示图。
图8是用于解释根据本发明实施例的在使GaN层沿垂直于M方向的方向再生长之前和之后的X射线衍射(XRD)测量结果的示图。
图9是用于比较GaN层再生长之前和之后的半导体光学器件的光致发光(PL)强度的曲线图。
具体实施方式
下面将参照附图详细描述本发明的示例性实施例。提供这些实施例是为了使本公开将是彻底的和完整的，并将把本发明的范围充分地传达给本领域的技术人员。然而，本发明可以以很多不同的形式来实施，并不应该被解释为限于在此阐述的实施例。在整个附图和说明书中，将使用相同的标号表示相同的元件。
图1示出了用于解释蓝宝石基底的晶面的蓝宝石晶体结构。
通常，如图1所示，如果在使用C面(例如，(0001)面)作为蓝宝石晶面的蓝宝石基底上生长诸如极性GaN的氮化物半导体，则由于形成极化场而导致的压电效应会降低内部量子效率。
在本发明的实施例中，在蓝宝石基底上形成诸如LED、LD、光检测器或太阳能电池之类的氮化物半导体光学器件结构，并且使用图1中的A面(例如，(11-20)面)、M面(例如，(10-10)面)或R面(例如，(1-102)面)作为蓝宝石基底的晶面，从而可在上述晶面上生长非极性或半极性氮化物半导体层。如果需要，可使用C面作为蓝宝石基底的晶面，并且可在该晶面上形成非极性或半极性氮化物半导体层。
例如，在选择M面作为蓝宝石基底的晶面的情况下，可在如图2所示的对应晶面上形成沿垂直于(11-22)面的方向生长的半极性氮化物半导体层。在选择A面作为蓝宝石基底的晶面的情况下，可在对应晶面的离轴(off-axis)上形成沿预定方向生长的半极性氮化物半导体层。在选择R面作为蓝宝石基底的晶面的情况下，可在对应晶面的离轴上形成沿垂直于(11-20)面的方向生长的非极性氮化物半导体层。如上所述，可选择C面作为蓝宝石基底的晶面，并可在该晶面上形成预定的非极性或半极性氮化物半导体层。
即使在使用能够生长诸如非极性或半极性GaN的氮化物半导体层的蓝宝石基底的情况下，如果在蓝宝石基底上形成包括氮化物半导体层的模板层，则由于晶格失配和元件之间的热膨胀系数的差异也会导致诸如线缺陷和点缺陷之类的很多晶体缺陷。这样的晶体缺陷对光学器件的可靠性(例如，抗静电放电(ESD))产生不良影响，并且还导致电流泄漏。结果，可能会降低光学器件的量子效率，从而导致光学器件的性能劣化。在本发明的实施例中，当在能够生长非极性或半极性的氮化物半导体层的蓝宝石基底上形成模板层时，可通过执行表面改性以形成多孔GaN层并在表面改性的GaN层上再生长氮化物半导体层(例如，InxAlyGa1-x-yN层(0≤x≤1，0≤y≤1，0≤x+y≤1))来解决上述问题。
下面将对用于制造半导体光学器件的方法进行描述。为了形成非极性或半极性氮化物半导体层，半导体光学器件采用使用A面、M面或R面作为晶面的蓝宝石基底，并且在包括具有通过表面改性形成的孔的GaN层的模板层上形成半导体光学器件。半导体光学器件指诸如LED、LD、光检测器或太阳能电池之类的氮化物半导体光学器件。尽管将以LED作为半导体光学器件的示例进行描述，但是本发明不限于此。本发明还可以类似地应用于制造诸如LD、光检测器或太阳能电池之类的其它氮化物半导体光学器件的方法。而且，根据本发明的用于制造半导体光学器件的方法也可以类似地应用于用于制造诸如普通二极管或晶体管之类的半导体电子器件的方法。
图3是用于解释根据本发明实施例的在蓝宝石基底上形成多孔GaN层的工艺和再生长InxAlyGa1-x-yN层(0≤x≤1，0≤y≤1，0≤x+y≤1)的工艺的剖视图。
首先，准备能够生长非极性或半极性氮化物半导体层的蓝宝石基底110(S10)。
然后，在蓝宝石基底110上形成构成模板层的缓冲层111和GaN层112(S20)。缓冲层111可为低温氮化物半导体层，所述缓冲层111可具有实验式InxAlyGa1-x-yN(0≤x≤1，0≤y≤1，0≤x+y≤1)并在400℃至700℃的温度范围内的特定温度下形成为厚度为10至
Figure BDA0000153616980000051
GaN层112可为高温未掺杂GaN层，所述高温未掺杂GaN层可在高温下(例如，在800℃至1100℃的温度范围内的特定温度下)生长并形成为厚度为10至在这种情况下，GaN层112可为InxAlyGa1-x-yN(0≤x≤1，0≤y≤1，0≤x+y≤1)、掺杂有诸如Mg的杂质的p型掺杂GaN层或掺杂有诸如Si的杂质的n型掺杂GaN层。
可经诸如金属有机化学气相沉积(MOCVD)的真空沉积工艺来形成缓冲层111和GaN层112。如图5中的标号510所表示的，示出了如以上所形成的GaN层112的表面的SEM照片，在GaN层112中可包含诸如线缺陷或面缺陷的许多晶体缺陷(或位错)。
然后，对GaN层112进行表面改性以在GaN层112上形成多个孔(S30)。根据湿蚀刻溶液的浓度，将其上形成有GaN层112的蓝宝石基底110浸入到湿蚀刻溶液中几分钟至几十分钟，从而在GaN层112的表面上形成不规则的多个孔，其中，所述湿蚀刻溶液为例如酸溶液(例如，H2SO4溶液)或碱溶液(例如，KOH或NaOH)。按照这种方式，可对GaN层112进行表面改性以在GaN层112上形成多个孔。例如，作为用于表面改性以形成多孔的GaN层112的湿蚀刻溶液，可以使用含有氢氧化钾、氢氧化钠、硫酸、磷酸、硝酸或盐酸且浓度范围为0.001M至2M的溶液。此外，可将紫外光或激光束照射到GaN层112的表面上，从而可在GaN层112的表面上快速形成多个孔，由此实现多孔表面改性。在这种情况下，具有GaN的带隙以上能量的紫外光或激光束可使GaN层112活化，以有助于多孔表面改性。如果需要，可将外部电流施加到形成有GaN层112的基底上。在一些情况下，也可以改变蚀刻溶液的温度。如图5中的标号520所指示的，示出了表面改性的GaN层112的表面的SEM照片，可以看出在表面改性的GaN层112的表面上形成大量的孔。
同时，尽管已经描述了用于表面改性以形成多孔GaN层112的湿蚀刻工艺作为示例，但是本发明不限于此。在一些情况下，可通过诸如反应离子蚀刻(RIE)工艺的干蚀刻工艺对GaN层112进行表面改性，以在GaN层112上形成多孔。
在执行表面改性形成具有不规则的孔的GaN层112之后，经诸如金属有机化学气相沉积(MOCVD)的真空沉积工艺再生长InxAlyGa1-x-yN层(0≤x≤1，0≤y≤1，0≤x+y≤1)。再生长的InxAlyGa1-x-yN层可为未掺杂的GaN层。在一些情况下，再生长的InxAlyGa1-x-yN层可为掺杂有诸如Mg的杂质的p型掺杂层或掺杂有诸如Si的杂质的n型掺杂层。
在GaN层的再生长过程中，在再生长之前在GaN层112上生长InxAlyGa1-x-yN层(0≤x≤1，0≤y≤1，0≤x+y≤1)，然后在如图4所示的孔内侧向再生长InxAlyGa1-x-yN层(0≤x≤1，0≤y≤1，0≤x+y≤1)。因此，可减少缺陷。再生长的InxAlyGa1-x-yN层113可为高温未掺杂层，所述再生长的InxAlyGa1-x-yN层113可在高温下(例如，在800℃至1100℃的温度范围内的特定温度下)生长并可形成为以预定的厚度覆盖整个孔(S50)。再生长的InxAlyGa1-x-yN层113可形成为
Figure BDA0000153616980000071
至
Figure BDA0000153616980000072
的厚度。如图5中的标号530所指示的，示出了再生长的InxAlyGa1-x-yN层113的表面的SEM照片，可以看出与再生长之前的GaN层112(见图5中的510)相比，诸如线缺陷或面缺陷的多种晶体缺陷(或位错)减少，因此，以均匀且精细的结构实现了晶体生长。
图6是用于解释根据本发明实施例的半导体光学器件100的结构的剖视图。
参照图6，根据本发明实施例的半导体光学器件100包括蓝宝石基底110、模板层120和LED层130。模板层120和LED层130形成在蓝宝石基底110上。
蓝宝石基底110具有A面、M面或R面，在A面、M面或R面上可生长非极性或半极性氮化物半导体层。
如以上参照图3所述，模板层120包括缓冲层111和GaN层112。此外，模板层120还包括通过在执行表面改性使得GaN层112具有多个孔之后再生长GaN层而形成的InxAlyGa1-x-yN层113。缓冲层111可为低温氮化物半导体层，该缓冲层111可具有实验式InxAlyGa1-x-yN(0≤x≤1，0≤y≤1，0≤x+y≤1)并在400℃至700℃的温度范围内的特定温度下形成为
Figure BDA0000153616980000073
至的厚度。再生长之前的GaN层112和再生长的InxAlyGa1-x-yN层113中的每个可在800℃至1100℃的温度范围内的特定温度下形成
Figure BDA0000153616980000075
至
Figure BDA0000153616980000076
的厚度，并可为未掺杂层。
因此，如图5中的标号510所表示的，在再生长之前的GaN层112中存在大量晶体缺陷。相反，如图5中的标号530所表示的，当根据本发明实施例形成包括表面改性之后再生长的InxAlyGa1-x-yN层113的模板层120时，晶体缺陷显著减少。晶体缺陷的减少是由于孔内侧向晶体生长所致。晶体缺陷减少的均匀的非极性或半极性氮化物半导体层可从图7和图8的XRD测量结果中得到验证。
图7是用于解释根据本发明实施例的在GaN层沿平行于M方向的方向再生长之前和之后的XRD测量结果的示图。如从图7中的XRD强度可看出的，在再生长之前的GaN层112的情况下，半峰全宽(FWHM)值在平行于M方向的方向上为大约1213arcsec(弧度秒)。在多孔表面改性之后再生长的InxAlyGa1-x-yN层113的情况(再生长之后)下，FWHM值减小到在平行于M方向的方向上为大约1026arcsec。这是当使用R面作为蓝宝石晶面并沿垂直于A面的方向形成非极性GaN层时所获得的结果。
图8是用于解释根据本发明实施例的在GaN层沿垂直于M方向的方向再生长之前和之后的XRD测量结果的示图。如从图8中的XRD强度可看出的，在再生长之前的GaN层112的情况下，FWHM值在垂直于M方向的方向上为大约1425arcsec。在多孔表面改性之后再生长的InxAlyGa1-x-yN层113的情况(再生长之后)下，FWHM值减小到在垂直于M方向的方向上为大约1278arcsec。这是当使用R面作为蓝宝石晶面并沿垂直于A面的方向形成非极性GaN层时所获得的结果。
如上所述，在具有根据本发明实施例的多孔表面改性之后再生长的InxAlyGa1-x-yN层113的结构中获得的FWHM值比在仅具有再生长之前的GaN层112的结构中获得的FWHM值小得多。这表示在多孔表面改性之后使GaN层再生长的结构中结晶程度高。
在形成晶体缺陷显著减少并且结晶程度得到改善的模板层120，然后在该模板层120上形成诸如LED、LD、光检测器或太阳能电池的半导体光学器件结构的情况下，能够抑制像现有技术的结构中的在极性氮化物半导体层中出现的电流泄漏。而且，光学器件中的电子空穴复合率可增大，从而提高光学器件的量子效率。结果，可提高光学器件的亮度。
例如，在LED层130形成在模板层120上的情况下，LED层130可具有活性层132和133设置于n型氮化物半导体层131和p型氮化物半导体层134之间的结构，如图6所示。
可通过使掺杂有诸如Si的杂质的GaN层生长为大约2微米的厚度来形成n型氮化物半导体层131。
活性层132和133可包括多量子阱(MQW)层132和电子阻挡层(EBL)133。具体地讲，可通过交替地层叠GaN障碍层(大约7.5纳米)和In0.15Ga0.85N量子阱层(大约2.5纳米)若干次(例如，5次)来形成MQW层132。可利用Al0.12Ga0.88N层(大约20纳米)来形成电子阻挡层133。
MQW层132的InGaN量子阱层和GaN障碍层可以以大约1×1019/cm3的Si掺杂剂浓度被掺杂，电子阻挡层133可以以大约5×1019/cm3的Mg掺杂剂浓度被掺杂。尽管已经将In0.15Ga0.85N层描述为InGaN量子阱层的示例，但是本发明不限于此。类似于InxGa1-xN(0＜x＜1)，In和Ga的比率可改变。另外，尽管已经将A10.12Ga0.88N层描述为电子阻挡层133的示例，但是本发明不限于此。类似于AlxGa1-xN(0＜x＜1)，Al和Ga的比率可改变。此外，MQW层132的InGaN量子阱层和GaN障碍层可用O、S、C、Ge、Zn、Cd和Mg中的至少一种以及Si进行掺杂。
可通过使以大约5×1019/cm3的Mg掺杂剂浓度掺杂的GaN层生长为厚度为大约100纳米来形成p型氮化物半导体层134。
用于施加电压的电极141和142可分别形成在n型氮化物半导体层131和p型氮化物半导体层134上。完成的LED可安装在预定的封装基底上并用作单独的光学器件。
图9是用于比较再生长GaN层之前和之后的半导体光学器件的PL强度的曲线图。
参照图9，在使用R面作为蓝宝石晶面、在垂直于A面的方向上形成非极性GaN层以及在非极性GaN层上形成LED的结构中，在再生长之前的GaN层112的情况下的PL强度低。相反，在根据本发明实施例的在多孔表面改性之后再生长InxAlyGa1-x-yN层113的情况(再生长之后)下，在对应的可见光波长中的PL强度较高，是大约2.5倍以上。
如上所述，可在模板层120上不仅形成LED层130还形成其它半导体光学器件结构(诸如LD、光检测器和太阳能电池)或其它半导体电子器件(诸如普通二极管或晶体管)，如图6所示。可在活性层132和133等处抑制压电效应。因此，可提高电子-空穴复合率和量子效率，从而有助于器件性能(例如，亮度)改善。
尽管上文已经描述蓝宝石基底作为示例，但是这里可以使用能够生长氮化物半导体的各种基底。例如，除了蓝宝石基底之外，这里还可以使用SiC基底或Si基底。
尽管已经参照具体实施例描述了本发明的实施例，但是将明白的是，在不脱离如权利要求书中限定的本发明的精神和范围的情况下，可以做出各种改变和变型。

Claims (11)

1.一种制造半导体器件的方法，在所述方法中，在具有用于生长非极性或半极性氮化物半导体层的晶面的基底上形成模板层和半导体器件结构，所述方法包括：
在基底上形成氮化物半导体层；
执行多孔表面改性，使得氮化物半导体层具有多个孔；
通过在表面改性的氮化物半导体层上再生长氮化物半导体层来形成模板层；以及
在模板层上形成半导体器件结构。
2.一种通过权利要求1的方法制造的半导体器件。
3.根据权利要求2所述的半导体器件，其中，在多孔表面改性之前的氮化物半导体层或再生长的氮化物半导体层包括InxAlyGa1-x-yN、未掺杂的GaN层、n型掺杂的GaN层或p型掺杂的GaN层，其中，0≤x≤1，0≤y≤1，0≤x+y≤1。
4.根据权利要求2所述的半导体器件，其中，基底包括蓝宝石基底、SiC基底或Si基底。
5.根据权利要求2所述的半导体器件，其中，基底的晶面包括A面、M面或R面。
6.根据权利要求2所述的半导体器件，其中，
利用湿蚀刻溶液来执行氮化物半导体层的多孔表面改性；以及
通过金属有机化学气相沉积工艺来执行氮化物半导体层的多孔表面改性之前的氮化物半导体层的生长以及氮化物半导体层的多孔表面改性之后的氮化物半导体层的再生长。
7.根据权利要求6所述的半导体器件，其中，湿蚀刻溶液包括含有氢氧化钾、氢氧化钠、硫酸、磷酸、硝酸或盐酸且浓度范围为0.001M至2M的溶液。
8.根据权利要求2所述的半导体器件，其中，通过干蚀刻工艺来执行氮化物半导体层的多孔表面改性。
9.根据权利要求2所述的半导体器件，其中，在氮化物半导体层的多孔表面改性过程中，将具有氮化物半导体层的带隙以上的能量的光照射在氮化物半导体层的表面上。
10.根据权利要求2所述的半导体器件，其中，半导体器件包括具有位于n型氮化物半导体层和p型氮化物半导体层之间的活性层的发光二极管。
11.根据权利要求2所述的半导体器件，其中，半导体器件包括光学器件或电子器件，所述光学器件包括发光二极管、激光二极管、光检测器或太阳能电池，所述电子器件包括晶体管。
CN2010800466035A 2009-10-16 2010-08-27 多孔氮化物半导体上的高品质非极性/半极性半导体器件及其制造方法 Pending CN102598317A (zh)

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