JP4993435B2 - 窒化物半導体発光素子の製造方法 - Google Patents
窒化物半導体発光素子の製造方法 Download PDFInfo
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- JP4993435B2 JP4993435B2 JP2006068703A JP2006068703A JP4993435B2 JP 4993435 B2 JP4993435 B2 JP 4993435B2 JP 2006068703 A JP2006068703 A JP 2006068703A JP 2006068703 A JP2006068703 A JP 2006068703A JP 4993435 B2 JP4993435 B2 JP 4993435B2
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- Prior art keywords
- nitride semiconductor
- void
- semiconductor layer
- layer
- light emitting
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- 239000004065 semiconductor Substances 0.000 title claims description 117
- 150000004767 nitrides Chemical class 0.000 title claims description 114
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000011800 void material Substances 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 34
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 9
- 238000011282 treatment Methods 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 description 28
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 239000000523 sample Substances 0.000 description 20
- 238000000605 extraction Methods 0.000 description 15
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 11
- 239000011777 magnesium Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000000149 argon plasma sintering Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- Led Devices (AREA)
Description
ステップS10において、マグネシウム(Mg)を添加したp型アルミガリウムナイトライド(AlGaN)層を成長させる。TMGを8.1μmol/min、トリメチルアルミニウム(TMA)を7.56μmol/min、NH3を4.4LM供給し、水素と窒素の混合雰囲気下で、基板温度を870℃にして5分間、厚さ40nmまでp型AlGaN層を成長させる。添加するMgのGaNに対する分子(原子)数の比Mg/GaNは0.0184である。
2 低温窒化物半導体層
3 ボイド形成層
4 ボイド窒化物半導体層
5 ボイド
6 n型窒化物半導体層
7 発光層
8 p型窒化物半導体層
9 n型電極
10 p型電極
11 サブマウント
12 絶縁膜
13 カソード引き出し電極
14 アノード引き出し電極
15 共晶電極
Claims (7)
- (a)基板上に多孔性のボイド窒化物半導体層を少なくとも1層形成する工程と、
(b)前記ボイド窒化物半導体層の上に少なくとも1層の発光素子形成用窒化物半導体層を形成する工程と
を含み、
前記工程(a)は、
(a−1)第1窒化物半導体層を形成する工程と、
(a−2)前記第1窒化物半導体層を加熱処理することにより、多数の島状ないしポラス状のボイド形成層を形成する工程と、
(a−3)前記ボイド形成層の上に第2窒化物半導体層を形成することにより、ボイドを形成する工程と
を含み、
工程(a−1)〜(a−3)を1サイクルとして少なくとも1層のボイド窒化物半導体層を形成する窒化物半導体発光素子の製造方法。 - 前記工程(a−1)で形成される第1窒化物半導体層は、エピタキシャル層を成長できる温度に比べて低い温度で形成されて結晶性が低い請求項1に記載の窒化物半導体発光素子の製造方法。
- 前記加熱処理の時間が2分〜40分である請求項1または2に記載の窒化物半導体発光素子の製造方法。
- 前記加熱処理の時間が5分〜35分である請求項1または2に記載の窒化物半導体発光素子の製造方法。
- 前記第1窒化物半導体層の厚さが200nm〜400nmである請求項1〜4のいずれか1項に記載の窒化物半導体発光素子の製造方法。
- 前記ボイド窒化物半導体層中のボイドの大きさが150nm〜300nmである請求項1〜5のいずれか1項に記載の窒化物半導体発光素子の製造方法。
- 前記ボイド窒化物半導体層のボイド密度が1E+8個/cm 2 〜1E+9個/cm 2 である請求項1〜6のいずれか1項に記載の窒化物半導体発光素子の製造方法。
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JP2007250611A JP2007250611A (ja) | 2007-09-27 |
JP4993435B2 true JP4993435B2 (ja) | 2012-08-08 |
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101137911B1 (ko) * | 2007-12-18 | 2012-05-03 | 삼성코닝정밀소재 주식회사 | 질화갈륨 기판의 제조 방법 |
KR101082788B1 (ko) | 2009-10-16 | 2011-11-14 | 한국산업기술대학교산학협력단 | 다공성 질화물 반도체 상의 고품질 비극성/반극성 반도체 소자 및 그 제조 방법 |
CN102376830B (zh) * | 2010-08-19 | 2015-07-08 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
US9653313B2 (en) | 2013-05-01 | 2017-05-16 | Sensor Electronic Technology, Inc. | Stress relieving semiconductor layer |
US10032956B2 (en) | 2011-09-06 | 2018-07-24 | Sensor Electronic Technology, Inc. | Patterned substrate design for layer growth |
CN104247053B (zh) * | 2012-03-23 | 2017-03-08 | 夏普株式会社 | 半导体发光元件、半导体发光元件的制造方法、半导体发光装置及基板 |
EP2992562B1 (en) * | 2013-05-01 | 2024-07-03 | Sensor Electronic Technology Inc. | Stress relieving semiconductor layer |
US10460952B2 (en) | 2013-05-01 | 2019-10-29 | Sensor Electronic Technology, Inc. | Stress relieving semiconductor layer |
JP2014123765A (ja) * | 2014-02-27 | 2014-07-03 | Sumitomo Electric Ind Ltd | ウエハ生産物、窒化ガリウム系半導体光素子 |
KR102300718B1 (ko) * | 2014-04-24 | 2021-09-09 | 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소 | 자외선 발광 다이오드 및 그것을 구비한 전기 기기 |
JP2015216352A (ja) * | 2014-04-24 | 2015-12-03 | 国立研究開発法人理化学研究所 | 紫外発光ダイオードおよびそれを備える電気機器 |
JP7224020B2 (ja) * | 2015-10-15 | 2023-02-17 | スージョウ レキン セミコンダクター カンパニー リミテッド | 半導体素子、半導体素子パッケージ、およびこれを含む照明システム |
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JP2001223165A (ja) * | 2000-02-10 | 2001-08-17 | Hitachi Cable Ltd | 窒化物半導体及びその製造方法 |
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