JP7224020B2 - 半導体素子、半導体素子パッケージ、およびこれを含む照明システム - Google Patents
半導体素子、半導体素子パッケージ、およびこれを含む照明システム Download PDFInfo
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- H01L33/40—Materials therefor
Description
Claims (10)
- 基板と、
前記基板上に配置されるバッファー層と、
前記バッファー層上に配置されて第1導電型半導体層、第2導電型半導体層および前記第1導電型半導体層と前記第2導電型半導体層との間に配置されて紫外線光を放出する活性層を含む発光構造物と、
前記バッファー層内に配置される複数のエアーボイドと、
を含み、
前記エアーボイドのそれぞれは、前記基板表面を基準として互いに異なる少なくとも2つの傾斜面が形成され、
前記エアーボイドの少なくとも2つの傾斜面は、前記発光構造物と対向し、
前記基板は、凹凸パターンを含み、
前記バッファー層の一部は、前記凹凸パターンの凹に提供され、
前記エアーボイドの幅は、前記基板の凹凸の凹の幅の半分以下であり、
前記凹凸の凸の幅は、前記凹凸の凹の幅の2倍以上であり、
前記凹凸の高さは、前記エアーボイドの幅より大きく、前記エアーボイドの高さより小さく、
前記エアーボイドは、前記凹に提供された前記バッファー層の一部の上に配置され、
前記エアーボイドは、前記凹凸パターンと離隔し、
前記エアーボイドは、前記第1導電型半導体層に隣接するように配置される第1領域と、前記基板に隣接するように配置される第2領域とを含み、
前記第1領域は、前記第2領域から前記第1導電型半導体層方向に行くほど幅が減少し、前記傾斜面が形成される三角形の断面形状を有し、
前記第2領域は、一定な幅の四角形の断面形状を有する、半導体素子。 - 前記エアーボイドと対向配置される活性層の他側には、反射層をさらに含む、請求項1に記載の半導体素子。
- 前記基板と前記エアーボイドとの間の第1離隔距離は、200nmないし300nmであり、前記基板と前記エアーボイドの第1領域の終端との第2離隔距離は800nmないし900nmである、請求項1または請求項2に記載の半導体素子。
- 前記凹凸の凹の幅は、0.5μmであり、凸の幅は1.2μmであり、前記凹凸の高さは1.2μmであり、前記エアーボイドの高さは3μmである、請求項1ないし請求項3のいずれか一項に記載の半導体素子。
- 基板と、
前記基板の一側に配置されたバッファー層と、
前記バッファー層の一側に配置され、第1導電型半導体層、活性層および第2導電型半導体層を含む発光構造物と、
前記基板に対向して配置されたサブマウントと、
前記発光構造物と前記サブマウントとの間に配置され、前記第1導電型半導体層と電気的に連結される第1バンプと、
前記発光構造物と前記サブマウントとの間に配置され、前記第2導電型半導体層と電気的に連結される第2バンプと、
を含み、
前記バッファー層は、複数のエアーボイドを含み、
前記エアーボイドのそれぞれは、少なくとも2つの傾斜面を有し、
前記基板は、凹凸パターンを含み、
前記バッファー層の一部は、前記凹凸パターンの凹に提供され、
前記エアーボイドの幅は、前記基板の凹凸の凹の幅の半分以下であり、
前記凹凸の凸の幅は、前記凹凸の凹の幅の2倍以上であり、
前記凹凸の高さは、前記エアーボイドの幅より大きく、前記エアーボイドの高さより小さく、
前記エアーボイドは、前記凹に提供された前記バッファー層の一部の上に配置され、
前記エアーボイドは、前記凹凸パターンと離隔し、
前記エアーボイドは、前記第1導電型半導体層に隣接するように配置される第1領域と、前記基板に隣接するように配置される第2領域とを含み、
前記第1領域は、前記第2領域から前記第1導電型半導体層方向に行くほど幅が減少し、前記傾斜面が形成される三角形の断面形状を有し、
前記第2領域は、一定な幅の四角形の断面形状を有する、半導体素子パッケージ。 - 前記サブマウントの下面の上に配置される反射層を含み、
前記傾斜面は、前記反射層と対向する、請求項5に記載の半導体素子パッケージ。 - 前記基板と前記エアーボイドとの間の第1離隔距離は、200nmないし300nmである、請求項5または請求項6に記載の半導体素子パッケージ。
- 前記基板と前記エアーボイドの第1領域の終端との第2離隔距離は800nmないし900nmである、請求項5ないし請求項7のいずれか一項に記載の半導体素子パッケージ。
- 前記エアーボイドは、互いに異なる高さと幅を有する大きさで形成され、その大きさは全体面積の±30%範囲内で形成される、請求項5ないし請求項8のいずれか一項に記載の半導体素子パッケージ。
- 前記サブマウントと前記バンプとの間にそれぞれ配置された絶縁層をさらに含み、前記絶縁層は分散ブラッグ反射層を含む、請求項5ないし請求項9のいずれか一項に記載の半導体素子パッケージ。
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PCT/KR2016/011576 WO2017065566A1 (ko) | 2015-10-15 | 2016-10-14 | 반도체 소자, 반도체 소자 패키지, 및 이를 포함하는 조명 시스템 |
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US20200411724A1 (en) * | 2019-06-27 | 2020-12-31 | Lumileds Llc | Nanocone arrays for enhancing light outcoupling and package efficiency |
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JP2007250611A (ja) | 2006-03-14 | 2007-09-27 | Stanley Electric Co Ltd | 窒化物半導体発光素子およびその製造方法 |
WO2011155010A1 (ja) | 2010-06-07 | 2011-12-15 | 創光科学株式会社 | エピタキシャル成長用テンプレートの作製方法及び窒化物半導体装置 |
WO2014069235A1 (ja) | 2012-11-02 | 2014-05-08 | 独立行政法人理化学研究所 | 紫外発光ダイオードおよびその製造方法 |
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KR20180061373A (ko) | 2018-06-07 |
EP3364465A4 (en) | 2018-10-10 |
CN108352425B (zh) | 2022-02-11 |
CN108352425A (zh) | 2018-07-31 |
US20180315887A1 (en) | 2018-11-01 |
JP2018530924A (ja) | 2018-10-18 |
WO2017065566A1 (ko) | 2017-04-20 |
EP3364465A1 (en) | 2018-08-22 |
KR102271159B1 (ko) | 2021-07-01 |
EP3364465B1 (en) | 2019-12-18 |
US10340417B2 (en) | 2019-07-02 |
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