CN111864019B - 一种具有嵌入式散射层的倒装发光二极管及其制备方法 - Google Patents
一种具有嵌入式散射层的倒装发光二极管及其制备方法 Download PDFInfo
- Publication number
- CN111864019B CN111864019B CN202010664524.6A CN202010664524A CN111864019B CN 111864019 B CN111864019 B CN 111864019B CN 202010664524 A CN202010664524 A CN 202010664524A CN 111864019 B CN111864019 B CN 111864019B
- Authority
- CN
- China
- Prior art keywords
- layer
- electrode
- type
- nitride material
- material layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010664524.6A CN111864019B (zh) | 2020-07-10 | 2020-07-10 | 一种具有嵌入式散射层的倒装发光二极管及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010664524.6A CN111864019B (zh) | 2020-07-10 | 2020-07-10 | 一种具有嵌入式散射层的倒装发光二极管及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111864019A CN111864019A (zh) | 2020-10-30 |
CN111864019B true CN111864019B (zh) | 2021-11-30 |
Family
ID=72983996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010664524.6A Active CN111864019B (zh) | 2020-07-10 | 2020-07-10 | 一种具有嵌入式散射层的倒装发光二极管及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111864019B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112563377A (zh) * | 2020-12-09 | 2021-03-26 | 武汉大学 | 生长在具有异质材料阵列的衬底上的倒装发光二极管芯片 |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1759469A (zh) * | 2003-03-07 | 2006-04-12 | 住友化学株式会社 | 氮化镓单晶基板及其制造方法 |
CN101859789A (zh) * | 2009-04-07 | 2010-10-13 | 璨扬投资有限公司 | 具有增加光取出效率的交流发光装置及其制造方法 |
CN102484125A (zh) * | 2009-08-28 | 2012-05-30 | 加利福尼亚大学董事会 | 通过在活性装置上结合结构化材料而具有嵌入式空隙结构的发光装置 |
CN102668135A (zh) * | 2010-06-24 | 2012-09-12 | 首尔Opto仪器股份有限公司 | 发光二极管 |
KR20130041642A (ko) * | 2011-10-17 | 2013-04-25 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
KR20140104717A (ko) * | 2013-02-21 | 2014-08-29 | 삼성전자주식회사 | 반도체 발광소자 및 그 제조방법 |
CN104269481A (zh) * | 2014-10-21 | 2015-01-07 | 山东元旭光电有限公司 | 具有嵌入式空气空隙的氮化镓二极管及其制备方法 |
CN105405944A (zh) * | 2010-01-15 | 2016-03-16 | 皇家飞利浦电子股份有限公司 | 包括光抽取结构的iii-v发光器件 |
CN108110105A (zh) * | 2018-01-31 | 2018-06-01 | 广东工业大学 | 一种紫外led芯片、紫外led芯片的制作方法及一种紫外led |
CN108352425A (zh) * | 2015-10-15 | 2018-07-31 | Lg 伊诺特有限公司 | 半导体器件、半导体器件封装和包括其的照明系统 |
CN109244197A (zh) * | 2018-08-29 | 2019-01-18 | 武汉大学 | 一种倒装结构发光二极管芯片及其制备方法 |
CN109378367A (zh) * | 2018-10-30 | 2019-02-22 | 广东工业大学 | 一种发光二极管及其制作方法 |
CN109686825A (zh) * | 2017-10-19 | 2019-04-26 | 三星电子株式会社 | 发光装置及其制造方法 |
CN110416378A (zh) * | 2018-04-27 | 2019-11-05 | 三星电子株式会社 | 半导体发光装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8460949B2 (en) * | 2008-12-30 | 2013-06-11 | Chang Hee Hong | Light emitting device with air bars and method of manufacturing the same |
JP2011146597A (ja) * | 2010-01-15 | 2011-07-28 | Sony Corp | 発光素子および表示装置 |
CN109980058A (zh) * | 2019-02-28 | 2019-07-05 | 江苏大学 | 一种具有空气孔光子晶体结构的高出光效率二极管 |
-
2020
- 2020-07-10 CN CN202010664524.6A patent/CN111864019B/zh active Active
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1759469A (zh) * | 2003-03-07 | 2006-04-12 | 住友化学株式会社 | 氮化镓单晶基板及其制造方法 |
CN101859789A (zh) * | 2009-04-07 | 2010-10-13 | 璨扬投资有限公司 | 具有增加光取出效率的交流发光装置及其制造方法 |
CN102484125A (zh) * | 2009-08-28 | 2012-05-30 | 加利福尼亚大学董事会 | 通过在活性装置上结合结构化材料而具有嵌入式空隙结构的发光装置 |
CN105405944A (zh) * | 2010-01-15 | 2016-03-16 | 皇家飞利浦电子股份有限公司 | 包括光抽取结构的iii-v发光器件 |
CN102668135A (zh) * | 2010-06-24 | 2012-09-12 | 首尔Opto仪器股份有限公司 | 发光二极管 |
KR20130041642A (ko) * | 2011-10-17 | 2013-04-25 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
KR20140104717A (ko) * | 2013-02-21 | 2014-08-29 | 삼성전자주식회사 | 반도체 발광소자 및 그 제조방법 |
CN104269481A (zh) * | 2014-10-21 | 2015-01-07 | 山东元旭光电有限公司 | 具有嵌入式空气空隙的氮化镓二极管及其制备方法 |
CN108352425A (zh) * | 2015-10-15 | 2018-07-31 | Lg 伊诺特有限公司 | 半导体器件、半导体器件封装和包括其的照明系统 |
CN109686825A (zh) * | 2017-10-19 | 2019-04-26 | 三星电子株式会社 | 发光装置及其制造方法 |
CN108110105A (zh) * | 2018-01-31 | 2018-06-01 | 广东工业大学 | 一种紫外led芯片、紫外led芯片的制作方法及一种紫外led |
CN110416378A (zh) * | 2018-04-27 | 2019-11-05 | 三星电子株式会社 | 半导体发光装置 |
CN109244197A (zh) * | 2018-08-29 | 2019-01-18 | 武汉大学 | 一种倒装结构发光二极管芯片及其制备方法 |
CN109378367A (zh) * | 2018-10-30 | 2019-02-22 | 广东工业大学 | 一种发光二极管及其制作方法 |
Non-Patent Citations (1)
Title |
---|
Improved light output power of LEDs with embedded air voidsstructure and SiO2current blocking layer;Shengjun Zhou 等;《Applied Surface Science》;20140315;第252-258页 * |
Also Published As
Publication number | Publication date |
---|---|
CN111864019A (zh) | 2020-10-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10749075B2 (en) | Semiconductor light-emitting device | |
US8674375B2 (en) | Roughened high refractive index layer/LED for high light extraction | |
US8124985B2 (en) | Semiconductor light emitting device and method for manufacturing the same | |
US10249789B2 (en) | Light emitting diode chip and fabrication method | |
CN102456799B (zh) | 半导体发光器件及其制造方法 | |
CN108922950B (zh) | 一种高亮度倒装led芯片及其制作方法 | |
JP2010500774A (ja) | 発光ダイオードの外部発光効率の改善 | |
CN111433921B (zh) | 一种发光二极管 | |
JP2006108698A (ja) | フリップチップ発光デバイス用のコンタクト及び全方向反射ミラー | |
KR20100099286A (ko) | 반도체 발광 장치를 위한 콘택트 | |
WO2008083562A1 (fr) | Type de diode électro-luminescente comprenant une structure à couche fenêtre d'étalement courant et d'anti-réflexion lumineuse | |
KR20150139194A (ko) | 발광 다이오드 및 그 제조 방법 | |
TW202339302A (zh) | 用於電流注入之led晶片的接觸結構 | |
US11764332B2 (en) | Semiconductor light-emitting device | |
CN109638131B (zh) | 一种dbr倒装芯片的制作方法 | |
KR101064011B1 (ko) | 발광소자 및 그 제조방법 | |
TW202029529A (zh) | 發光元件及其製造方法 | |
TW202029533A (zh) | 發光元件及其製造方法 | |
WO2012058961A1 (zh) | 发光二极管及其制造方法 | |
CN111864019B (zh) | 一种具有嵌入式散射层的倒装发光二极管及其制备方法 | |
CN116779634B (zh) | 一种高压倒装结构的紫外led芯片及其制作方法 | |
US8735923B2 (en) | Semiconductor light emitting device and manufacturing method thereof | |
CN112366262B (zh) | 红光发光二极管芯片及其制作方法 | |
US20130214309A1 (en) | Light emitting diode and manufacturing method thereof, light emitting device | |
US20210036049A1 (en) | Light emitting device and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhou Shengjun Inventor after: Zhao Jie Inventor before: Zhou Shengjun Inventor before: Zhao Jie |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230106 Address after: No. 412, 4th floor, building 4, No. 588 Shuhui Road, Qingyang District, Chengdu, Sichuan 610000 Patentee after: Chengdu Feiyou Trading Co.,Ltd. Address before: 430072 No. 299 Bayi Road, Wuchang District, Hubei, Wuhan Patentee before: WUHAN University |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230116 Address after: In the park, No. 1, Chemical Avenue, Huayuan Street, Guixi City, Yingtan City, Jiangxi Province, 335000 Patentee after: Guixi crossing Photoelectric Technology Co.,Ltd. Address before: 710000 Room 31401, Unit 3, Unit 14, Jiatian International Building No. 1, 216 Taibai South Road, Yanta District, Xi'an City, Shaanxi Province Patentee before: Xi'an Crossing Photoelectric Technology Co.,Ltd. Effective date of registration: 20230116 Address after: 710000 Room 31401, Unit 3, Unit 14, Jiatian International Building No. 1, 216 Taibai South Road, Yanta District, Xi'an City, Shaanxi Province Patentee after: Xi'an Crossing Photoelectric Technology Co.,Ltd. Address before: No. 412, 4th floor, building 4, No. 588 Shuhui Road, Qingyang District, Chengdu, Sichuan 610000 Patentee before: Chengdu Feiyou Trading Co.,Ltd. |