WO2011046292A3 - 다공성 질화물 반도체 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법 - Google Patents

다공성 질화물 반도체 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법 Download PDF

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WO2011046292A3
WO2011046292A3 PCT/KR2010/005764 KR2010005764W WO2011046292A3 WO 2011046292 A3 WO2011046292 A3 WO 2011046292A3 KR 2010005764 W KR2010005764 W KR 2010005764W WO 2011046292 A3 WO2011046292 A3 WO 2011046292A3
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nitride semiconductor
semiconductor device
layer
semipolar
semiconductor layer
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French (fr)
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WO2011046292A2 (ko
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남옥현
이동헌
유근호
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Seoul Viosys Co Ltd
Industry Academic Cooperation Foundation of Korea Polytechnic University
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Industry Academic Cooperation Foundation of Korea Polytechnic University
Seoul Optodevice Co Ltd
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Priority to CN2010800466035A priority Critical patent/CN102598317A/zh
Priority to US13/502,241 priority patent/US9153737B2/en
Publication of WO2011046292A2 publication Critical patent/WO2011046292A2/ko
Publication of WO2011046292A3 publication Critical patent/WO2011046292A3/ko
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1278—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising nitrides, e.g. GaN
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    • H01S5/00—Semiconductor lasers
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
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Abstract

질화물 반도체층의 결함 밀도를 줄이고 내부양자효율과 광추출 효율을 향상시킨 고품질 비극성/반극성 반도체 소자 및 그 제조 방법이 개시된다. 상기 반도체 소자 제조 방법은, 비극성 또는 반극성 질화물 반도체층의 성장을 위한 결정면을 갖는 사파이어, SiC, 또는 Si기판 상에 템플레이트층과 반도체 소자 구조를 형성하는 반도체 소자의 제조 방법으로서, 상기 기판 위에 질화물 반도체층을 형성하고 상기 질화물 반도체층을 다공성으로 표면 개질한 후, 상기 표면 개질된 질화물 반도체층 위로 질화물 반도체층을 재성장한 상기 템플레이트층을 형성하고, 상기 템플레이트층 위에 상기 반도체 소자 구조를 형성한다.
PCT/KR2010/005764 2009-10-16 2010-08-27 다공성 질화물 반도체 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법 Ceased WO2011046292A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2010800466035A CN102598317A (zh) 2009-10-16 2010-08-27 多孔氮化物半导体上的高品质非极性/半极性半导体器件及其制造方法
US13/502,241 US9153737B2 (en) 2009-10-16 2010-08-27 High-quality non-polar/semi-polar semiconductor device on porous nitride semiconductor and manufacturing method thereof

Applications Claiming Priority (2)

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KR1020090098521A KR101082788B1 (ko) 2009-10-16 2009-10-16 다공성 질화물 반도체 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법
KR10-2009-0098521 2009-10-16

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WO2011046292A3 true WO2011046292A3 (ko) 2011-06-30

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US (1) US9153737B2 (ko)
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WO2011046292A2 (ko) 2011-04-21
KR101082788B1 (ko) 2011-11-14
US20120205665A1 (en) 2012-08-16
KR20110041611A (ko) 2011-04-22
CN102598317A (zh) 2012-07-18
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