WO2011046292A3 - 다공성 질화물 반도체 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법 - Google Patents

다공성 질화물 반도체 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법 Download PDF

Info

Publication number
WO2011046292A3
WO2011046292A3 PCT/KR2010/005764 KR2010005764W WO2011046292A3 WO 2011046292 A3 WO2011046292 A3 WO 2011046292A3 KR 2010005764 W KR2010005764 W KR 2010005764W WO 2011046292 A3 WO2011046292 A3 WO 2011046292A3
Authority
WO
WIPO (PCT)
Prior art keywords
nitride semiconductor
semiconductor device
layer
semipolar
semiconductor layer
Prior art date
Application number
PCT/KR2010/005764
Other languages
English (en)
French (fr)
Other versions
WO2011046292A2 (ko
Inventor
남옥현
이동헌
유근호
Original Assignee
서울옵토디바이스주식회사
한국산업기술대학교산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울옵토디바이스주식회사, 한국산업기술대학교산학협력단 filed Critical 서울옵토디바이스주식회사
Priority to CN2010800466035A priority Critical patent/CN102598317A/zh
Priority to US13/502,241 priority patent/US9153737B2/en
Publication of WO2011046292A2 publication Critical patent/WO2011046292A2/ko
Publication of WO2011046292A3 publication Critical patent/WO2011046292A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

질화물 반도체층의 결함 밀도를 줄이고 내부양자효율과 광추출 효율을 향상시킨 고품질 비극성/반극성 반도체 소자 및 그 제조 방법이 개시된다. 상기 반도체 소자 제조 방법은, 비극성 또는 반극성 질화물 반도체층의 성장을 위한 결정면을 갖는 사파이어, SiC, 또는 Si기판 상에 템플레이트층과 반도체 소자 구조를 형성하는 반도체 소자의 제조 방법으로서, 상기 기판 위에 질화물 반도체층을 형성하고 상기 질화물 반도체층을 다공성으로 표면 개질한 후, 상기 표면 개질된 질화물 반도체층 위로 질화물 반도체층을 재성장한 상기 템플레이트층을 형성하고, 상기 템플레이트층 위에 상기 반도체 소자 구조를 형성한다.
PCT/KR2010/005764 2009-10-16 2010-08-27 다공성 질화물 반도체 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법 WO2011046292A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2010800466035A CN102598317A (zh) 2009-10-16 2010-08-27 多孔氮化物半导体上的高品质非极性/半极性半导体器件及其制造方法
US13/502,241 US9153737B2 (en) 2009-10-16 2010-08-27 High-quality non-polar/semi-polar semiconductor device on porous nitride semiconductor and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090098521A KR101082788B1 (ko) 2009-10-16 2009-10-16 다공성 질화물 반도체 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법
KR10-2009-0098521 2009-10-16

Publications (2)

Publication Number Publication Date
WO2011046292A2 WO2011046292A2 (ko) 2011-04-21
WO2011046292A3 true WO2011046292A3 (ko) 2011-06-30

Family

ID=43876653

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005764 WO2011046292A2 (ko) 2009-10-16 2010-08-27 다공성 질화물 반도체 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법

Country Status (4)

Country Link
US (1) US9153737B2 (ko)
KR (1) KR101082788B1 (ko)
CN (1) CN102598317A (ko)
WO (1) WO2011046292A2 (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2529394A4 (en) 2010-01-27 2017-11-15 Yale University Conductivity based selective etch for gan devices and applications thereof
US9558954B2 (en) * 2010-04-22 2017-01-31 Luminus Devices, Inc. Selective wet etching and textured surface planarization processes
KR101393624B1 (ko) * 2012-01-27 2014-05-12 한국광기술원 적층결함이 제거된 반분극 질화물 소자의 제조방법
US20150084058A1 (en) * 2012-03-19 2015-03-26 Koninklijke Philips N.V. Light emitting device grown on a silicon substrate
KR101391960B1 (ko) * 2012-05-07 2014-05-12 한국산업기술대학교산학협력단 저결함 질화물 반도체층을 갖는 고품질 반도체 소자용 기판의 제조 방법
US9583353B2 (en) 2012-06-28 2017-02-28 Yale University Lateral electrochemical etching of III-nitride materials for microfabrication
KR101317106B1 (ko) * 2012-08-20 2013-10-11 전북대학교산학협력단 오믹 컨택 제조방법 및 이에 의하여 제조된 오믹 컨택
KR101372352B1 (ko) * 2012-09-07 2014-03-12 전북대학교산학협력단 ｐ-ＧａＮ 오믹 전극 제조방법 및 이에 의하여 제조된 ｐ-ＧａＮ 오믹 전극
KR101355086B1 (ko) * 2012-12-18 2014-01-27 한국광기술원 나노 필러 구조를 이용한 반극성 질화물층의 제조방법
CN104218128B (zh) * 2013-05-31 2018-12-14 晶元光电股份有限公司 具有高效率反射结构的发光元件
TW201530806A (zh) * 2014-01-29 2015-08-01 Rigidcrystal Technology Co Ltd 發光元件
JP6160501B2 (ja) * 2014-02-12 2017-07-12 豊田合成株式会社 半導体装置の製造方法
US11095096B2 (en) 2014-04-16 2021-08-17 Yale University Method for a GaN vertical microcavity surface emitting laser (VCSEL)
JP7016259B6 (ja) 2014-09-30 2023-12-15 イェール ユニバーシティー 多孔質窒化ガリウム層およびそれを含む半導体発光デバイス
US11018231B2 (en) 2014-12-01 2021-05-25 Yale University Method to make buried, highly conductive p-type III-nitride layers
WO2016187421A1 (en) * 2015-05-19 2016-11-24 Yale University A method and device concerning iii-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer
CN109148654B (zh) * 2018-08-30 2020-04-07 芜湖德豪润达光电科技有限公司 非极性面ⅲ族氮化物外延结构及其制备方法
WO2020095179A1 (en) * 2018-11-05 2020-05-14 King Abdullah University Of Science And Technology Optoelectronic semiconductor device
CN113745361A (zh) * 2021-07-20 2021-12-03 五邑大学 一种多孔GaN窄带紫外光电二极管及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001223165A (ja) * 2000-02-10 2001-08-17 Hitachi Cable Ltd 窒化物半導体及びその製造方法
JP2002050586A (ja) * 2000-08-03 2002-02-15 Hitachi Cable Ltd 半導体結晶の製造方法
JP2005085851A (ja) * 2003-09-05 2005-03-31 Hitachi Cable Ltd 窒化物系化合物半導体発光素子の製造方法
KR20050035565A (ko) * 2003-10-13 2005-04-19 삼성전기주식회사 실리콘 기판 상에 형성된 질화물 반도체 및 그 제조 방법
JP2007250611A (ja) * 2006-03-14 2007-09-27 Stanley Electric Co Ltd 窒化物半導体発光素子およびその製造方法
KR20070095181A (ko) * 2006-03-20 2007-09-28 삼성전기주식회사 Ⅲ족 질화물 반도체 박막 및 ⅲ족 질화물 반도체 발광소자

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176003A (en) * 1978-02-22 1979-11-27 Ncr Corporation Method for enhancing the adhesion of photoresist to polysilicon
JP2964941B2 (ja) * 1996-01-12 1999-10-18 日本電気株式会社 光デバイスの製造方法及び実装構造
KR100580751B1 (ko) * 2004-12-23 2006-05-15 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100695117B1 (ko) 2005-10-25 2007-03-14 삼성코닝 주식회사 ＧａＮ 제조방법
JP5250856B2 (ja) * 2006-06-13 2013-07-31 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
CN101054723A (zh) * 2007-02-07 2007-10-17 深圳市淼浩高新科技开发有限公司 一种r面蓝宝石晶体的生长方法
JP5165264B2 (ja) * 2007-03-22 2013-03-21 浜松ホトニクス株式会社 窒化物半導体基板
US8118934B2 (en) * 2007-09-26 2012-02-21 Wang Nang Wang Non-polar III-V nitride material and production method
KR101226077B1 (ko) * 2007-11-27 2013-01-24 삼성전자주식회사 측벽 스페이서 형성 방법 및 이를 이용한 반도체 소자의제조 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001223165A (ja) * 2000-02-10 2001-08-17 Hitachi Cable Ltd 窒化物半導体及びその製造方法
JP2002050586A (ja) * 2000-08-03 2002-02-15 Hitachi Cable Ltd 半導体結晶の製造方法
JP2005085851A (ja) * 2003-09-05 2005-03-31 Hitachi Cable Ltd 窒化物系化合物半導体発光素子の製造方法
KR20050035565A (ko) * 2003-10-13 2005-04-19 삼성전기주식회사 실리콘 기판 상에 형성된 질화물 반도체 및 그 제조 방법
JP2007250611A (ja) * 2006-03-14 2007-09-27 Stanley Electric Co Ltd 窒化物半導体発光素子およびその製造方法
KR20070095181A (ko) * 2006-03-20 2007-09-28 삼성전기주식회사 Ⅲ족 질화물 반도체 박막 및 ⅲ족 질화물 반도체 발광소자

Also Published As

Publication number Publication date
US9153737B2 (en) 2015-10-06
KR20110041611A (ko) 2011-04-22
CN102598317A (zh) 2012-07-18
WO2011046292A2 (ko) 2011-04-21
US20120205665A1 (en) 2012-08-16
KR101082788B1 (ko) 2011-11-14

Similar Documents

Publication Publication Date Title
WO2011046292A3 (ko) 다공성 질화물 반도체 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법
WO2011025290A3 (ko) 경사진 기판 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법
EP2472566A3 (en) Template, method for manufacturing the template and method for manufacturing vertical type nitride-based semiconductor light emitting device using the template
WO2011025291A3 (ko) 요철 패턴 기판 상의 고품질 비극성／반극성 반도체 소자 및 그 제조 방법
TW200735348A (en) Semiconductor heterostructure and method for forming a semiconductor heterostructure
SG145706A1 (en) Method and structure for fabricating iii-v nitride layers on silicon substrates
FR2977260B1 (fr) Procede de fabrication d'une couche epitaxiale epaisse de nitrure de gallium sur un substrat de silicium ou analogue et couche obtenue par ledit procede
MY147106A (en) Method for manufacturing epitaxial wafer
WO2009044638A1 (ja) ＧａＮエピタキシャル基板、半導体デバイス、ＧａＮエピタキシャル基板及び半導体デバイスの製造方法
DE602009000219D1 (de) Verfahren zur Bildung einer Quantentopfstruktur und Verfahren zur Herstellung eines lichtemittierenden Halbleiterelements
WO2013061047A3 (en) Silicon carbide epitaxy
KR20170137180A (ko) 다이아몬드-반도체 복합체 기판의 제조 방법
WO2010151857A3 (en) Method for forming iii-v semiconductor structures including aluminum-silicon nitride passivation
GB2467935B (en) Formation of thin layers of GaAs and germanium materials
WO2010027230A2 (ko) 질화물 박막 구조 및 그 형성 방법
WO2012051618A3 (en) Method for producing gallium nitride substrates for electronic and optoelectronic devices
EP2037013A3 (en) Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate
WO2010059419A3 (en) Method of forming a semiconductor layer
WO2011013354A3 (en) Method of producing microstructure of nitride semiconductor and photonic crystal prepared according to the method
JP2012094802A (ja) 窒化ガリウム層を有する多層構造基板及びその製造方法
CN102691102A (zh) 蓝宝石纳米碗阵列图形衬底的制作方法
TWI397618B (zh) 氮化物半導體模板及其製作方法
SG157315A1 (en) Method for fabricating semiconductor devices with shallow diffusion regions
WO2009072631A1 (ja) 窒化物半導体素子の製造方法および窒化物半導体素子
EP2468928A3 (en) Composition and manufacturing method

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201080046603.5

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10823534

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 13502241

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 10823534

Country of ref document: EP

Kind code of ref document: A2