CN102598244B - 具有增强的迁移率沟道的混合双box背栅绝缘体上硅晶片 - Google Patents
具有增强的迁移率沟道的混合双box背栅绝缘体上硅晶片 Download PDFInfo
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- CN102598244B CN102598244B CN201080048967.7A CN201080048967A CN102598244B CN 102598244 B CN102598244 B CN 102598244B CN 201080048967 A CN201080048967 A CN 201080048967A CN 102598244 B CN102598244 B CN 102598244B
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- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 38
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- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
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Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
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- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
Abstract
Description
Claims (24)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/613,574 US8587063B2 (en) | 2009-11-06 | 2009-11-06 | Hybrid double box back gate silicon-on-insulator wafers with enhanced mobility channels |
US12/613,574 | 2009-11-06 | ||
PCT/EP2010/066715 WO2011054852A1 (en) | 2009-11-06 | 2010-11-03 | Hybrid double box back gate silicon-on-insulator wafers with enhanced mobility channels |
Publications (2)
Publication Number | Publication Date |
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CN102598244A CN102598244A (zh) | 2012-07-18 |
CN102598244B true CN102598244B (zh) | 2014-11-05 |
Family
ID=43513861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201080048967.7A Active CN102598244B (zh) | 2009-11-06 | 2010-11-03 | 具有增强的迁移率沟道的混合双box背栅绝缘体上硅晶片 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8587063B2 (zh) |
CN (1) | CN102598244B (zh) |
DE (1) | DE112010004307B4 (zh) |
GB (1) | GB2487307B (zh) |
WO (1) | WO2011054852A1 (zh) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8431994B2 (en) * | 2010-03-16 | 2013-04-30 | International Business Machines Corporation | Thin-BOX metal backgate extremely thin SOI device |
US9087741B2 (en) | 2011-07-11 | 2015-07-21 | International Business Machines Corporation | CMOS with dual raised source and drain for NMOS and PMOS |
FR2980636B1 (fr) | 2011-09-22 | 2016-01-08 | St Microelectronics Rousset | Protection d'un dispositif electronique contre une attaque laser en face arriere, et support semiconducteur correspondant |
JP5695535B2 (ja) | 2011-09-27 | 2015-04-08 | 株式会社東芝 | 表示装置の製造方法 |
US20130175618A1 (en) | 2012-01-05 | 2013-07-11 | International Business Machines Corporation | Finfet device |
US8828851B2 (en) * | 2012-02-01 | 2014-09-09 | Stmicroeletronics, Inc. | Method to enable the formation of silicon germanium channel of FDSOI devices for PFET threshold voltage engineering |
US9105577B2 (en) * | 2012-02-16 | 2015-08-11 | International Business Machines Corporation | MOSFET with work function adjusted metal backgate |
US9709740B2 (en) | 2012-06-04 | 2017-07-18 | Micron Technology, Inc. | Method and structure providing optical isolation of a waveguide on a silicon-on-insulator substrate |
US8815694B2 (en) | 2012-12-03 | 2014-08-26 | International Business Machines Corporation | Inducing channel stress in semiconductor-on-insulator devices by base substrate oxidation |
US10109492B2 (en) * | 2013-02-25 | 2018-10-23 | Globalfoundries Inc. | Method of forming a high quality interfacial layer for a semiconductor device by performing a low temperature ALD process |
US8946819B2 (en) * | 2013-05-08 | 2015-02-03 | Globalfoundries Singapore Pte. Ltd. | Silicon-on-insulator integrated circuits with local oxidation of silicon and methods for fabricating the same |
US9490161B2 (en) | 2014-04-29 | 2016-11-08 | International Business Machines Corporation | Channel SiGe devices with multiple threshold voltages on hybrid oriented substrates, and methods of manufacturing same |
US9515181B2 (en) * | 2014-08-06 | 2016-12-06 | Qualcomm Incorporated | Semiconductor device with self-aligned back side features |
US9472575B2 (en) * | 2015-02-06 | 2016-10-18 | International Business Machines Corporation | Formation of strained fins in a finFET device |
US9564373B2 (en) * | 2015-02-27 | 2017-02-07 | International Business Machines Corporation | Forming a CMOS with dual strained channels |
US9633908B2 (en) * | 2015-06-16 | 2017-04-25 | International Business Machines Corporation | Method for forming a semiconductor structure containing high mobility semiconductor channel materials |
US9741620B2 (en) * | 2015-06-24 | 2017-08-22 | Invensas Corporation | Structures and methods for reliable packages |
US9606291B2 (en) | 2015-06-25 | 2017-03-28 | Globalfoundries Inc. | Multilevel waveguide structure |
US9559120B2 (en) * | 2015-07-02 | 2017-01-31 | International Business Machines Corporation | Porous silicon relaxation medium for dislocation free CMOS devices |
US9741625B2 (en) * | 2015-09-03 | 2017-08-22 | Globalfoundries Inc. | Method of forming a semiconductor device with STI structures on an SOI substrate |
CN106653676B (zh) * | 2015-11-03 | 2019-12-24 | 中芯国际集成电路制造(上海)有限公司 | 衬底结构、半导体器件以及制造方法 |
US10546929B2 (en) | 2017-07-19 | 2020-01-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Optimized double-gate transistors and fabricating process |
FR3069373A1 (fr) * | 2017-07-19 | 2019-01-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Transistors double grilles optimises et procede de fabrication |
US10658987B2 (en) * | 2017-12-18 | 2020-05-19 | Rambus Inc. | Amplifier circuit for cryogenic applications |
FR3083000A1 (fr) * | 2018-06-21 | 2019-12-27 | Soitec | Substrat pour capteur d'image de type face avant et procede de fabrication d'un tel substrat |
US10680065B2 (en) * | 2018-08-01 | 2020-06-09 | Globalfoundries Inc. | Field-effect transistors with a grown silicon-germanium channel |
US10903332B2 (en) * | 2018-08-22 | 2021-01-26 | International Business Machines Corporation | Fully depleted SOI transistor with a buried ferroelectric layer in back-gate |
FR3091010B1 (fr) * | 2018-12-24 | 2020-12-04 | Soitec Silicon On Insulator | Structure de type semi-conducteur pour applications digitales et radiofréquences, et procédé de fabrication d’une telle structure |
US11011411B2 (en) * | 2019-03-22 | 2021-05-18 | International Business Machines Corporation | Semiconductor wafer having integrated circuits with bottom local interconnects |
KR20220058042A (ko) | 2020-10-30 | 2022-05-09 | 삼성전자주식회사 | 반도체 웨이퍼 및 그 제조 방법 |
EP4075493A1 (en) | 2021-03-31 | 2022-10-19 | Samsung Electronics Co., Ltd. | Semiconductor device |
CN113471214B (zh) * | 2021-05-18 | 2023-09-19 | 中国科学院微电子研究所 | 一种多层绝缘体上硅锗衬底结构及其制备方法和用途 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1828833A (zh) * | 2005-01-18 | 2006-09-06 | 国际商业机器公司 | 半导体结构和制造半导体结构的方法 |
US7282425B2 (en) * | 2005-01-31 | 2007-10-16 | International Business Machines Corporation | Structure and method of integrating compound and elemental semiconductors for high-performance CMOS |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
FR2715502B1 (fr) | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Structure présentant des cavités et procédé de réalisation d'une telle structure. |
JPH10223900A (ja) | 1996-12-03 | 1998-08-21 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
US5882987A (en) | 1997-08-26 | 1999-03-16 | International Business Machines Corporation | Smart-cut process for the production of thin semiconductor material films |
US6057212A (en) | 1998-05-04 | 2000-05-02 | International Business Machines Corporation | Method for making bonded metal back-plane substrates |
US6093623A (en) | 1998-08-04 | 2000-07-25 | Micron Technology, Inc. | Methods for making silicon-on-insulator structures |
US6246094B1 (en) | 1998-10-20 | 2001-06-12 | Winbond Electronics Corporation | Buried shallow trench isolation and method for forming the same |
US6228691B1 (en) | 1999-06-30 | 2001-05-08 | Intel Corp. | Silicon-on-insulator devices and method for producing the same |
JP2001196566A (ja) | 2000-01-07 | 2001-07-19 | Sony Corp | 半導体基板およびその製造方法 |
US6602613B1 (en) | 2000-01-20 | 2003-08-05 | Amberwave Systems Corporation | Heterointegration of materials using deposition and bonding |
US6576957B2 (en) | 2000-12-31 | 2003-06-10 | Texas Instruments Incorporated | Etch-stopped SOI back-gate contact |
US6596570B2 (en) | 2001-06-06 | 2003-07-22 | International Business Machines Corporation | SOI device with reduced junction capacitance |
US6566158B2 (en) | 2001-08-17 | 2003-05-20 | Rosemount Aerospace Inc. | Method of preparing a semiconductor using ion implantation in a SiC layer |
US6870225B2 (en) | 2001-11-02 | 2005-03-22 | International Business Machines Corporation | Transistor structure with thick recessed source/drain structures and fabrication process of same |
US6849518B2 (en) | 2002-05-07 | 2005-02-01 | Intel Corporation | Dual trench isolation using single critical lithographic patterning |
US7008857B2 (en) | 2002-08-26 | 2006-03-07 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom |
US7410904B2 (en) | 2003-04-24 | 2008-08-12 | Hewlett-Packard Development Company, L.P. | Sensor produced using imprint lithography |
US6927146B2 (en) | 2003-06-17 | 2005-08-09 | Intel Corporation | Chemical thinning of epitaxial silicon layer over buried oxide |
US7018873B2 (en) | 2003-08-13 | 2006-03-28 | International Business Machines Corporation | Method of making a device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gate |
US7205185B2 (en) | 2003-09-15 | 2007-04-17 | International Busniess Machines Corporation | Self-aligned planar double-gate process by self-aligned oxidation |
US7718231B2 (en) | 2003-09-30 | 2010-05-18 | International Business Machines Corporation | Thin buried oxides by low-dose oxygen implantation into modified silicon |
US20050275018A1 (en) | 2004-06-10 | 2005-12-15 | Suresh Venkatesan | Semiconductor device with multiple semiconductor layers |
US7326629B2 (en) | 2004-09-10 | 2008-02-05 | Agency For Science, Technology And Research | Method of stacking thin substrates by transfer bonding |
US7235812B2 (en) | 2004-09-13 | 2007-06-26 | International Business Machines Corporation | Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques |
US7179719B2 (en) | 2004-09-28 | 2007-02-20 | Sharp Laboratories Of America, Inc. | System and method for hydrogen exfoliation |
US7274073B2 (en) * | 2004-10-08 | 2007-09-25 | International Business Machines Corporation | Integrated circuit with bulk and SOI devices connected with an epitaxial region |
DE102004054564B4 (de) | 2004-11-11 | 2008-11-27 | Siltronic Ag | Halbleitersubstrat und Verfahren zu dessen Herstellung |
US7335932B2 (en) | 2005-04-14 | 2008-02-26 | International Business Machines Corporation | Planar dual-gate field effect transistors (FETs) |
US7605429B2 (en) * | 2005-04-15 | 2009-10-20 | International Business Machines Corporation | Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancement |
US7102166B1 (en) * | 2005-04-21 | 2006-09-05 | International Business Machines Corporation | Hybrid orientation field effect transistors (FETs) |
US7439108B2 (en) | 2005-06-16 | 2008-10-21 | International Business Machines Corporation | Coplanar silicon-on-insulator (SOI) regions of different crystal orientations and methods of making the same |
KR100655437B1 (ko) | 2005-08-09 | 2006-12-08 | 삼성전자주식회사 | 반도체 웨이퍼 및 그 제조방법 |
US7250656B2 (en) * | 2005-08-19 | 2007-07-31 | International Business Machines Corporation | Hybrid-orientation technology buried n-well design |
WO2007030368A2 (en) | 2005-09-07 | 2007-03-15 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures on insulators and their fabrication methods |
US20080001183A1 (en) | 2005-10-28 | 2008-01-03 | Ashok Kumar Kapoor | Silicon-on-insulator (SOI) junction field effect transistor and method of manufacture |
US7417288B2 (en) * | 2005-12-19 | 2008-08-26 | International Business Machines Corporation | Substrate solution for back gate controlled SRAM with coexisting logic devices |
US7732287B2 (en) | 2006-05-02 | 2010-06-08 | Honeywell International Inc. | Method of forming a body-tie |
US7439110B2 (en) * | 2006-05-19 | 2008-10-21 | International Business Machines Corporation | Strained HOT (hybrid orientation technology) MOSFETs |
US7436006B2 (en) * | 2006-05-19 | 2008-10-14 | International Business Machines Corporation | Hybrid strained orientated substrates and devices |
US7659579B2 (en) | 2006-10-06 | 2010-02-09 | International Business Machines Corporation | FETS with self-aligned bodies and backgate holes |
US8016941B2 (en) * | 2007-02-05 | 2011-09-13 | Infineon Technologies Ag | Method and apparatus for manufacturing a semiconductor |
FR2917235B1 (fr) | 2007-06-06 | 2010-09-03 | Soitec Silicon On Insulator | Procede de realisation de composants hybrides. |
JP2009064860A (ja) | 2007-09-05 | 2009-03-26 | Renesas Technology Corp | 半導体装置 |
JP5394043B2 (ja) | 2007-11-19 | 2014-01-22 | 株式会社半導体エネルギー研究所 | 半導体基板及びそれを用いた半導体装置、並びにそれらの作製方法 |
WO2009128776A1 (en) | 2008-04-15 | 2009-10-22 | Vallin Oerjan | Hybrid wafers with hybrid-oriented layer |
US20100176495A1 (en) | 2009-01-12 | 2010-07-15 | International Business Machines Corporation | Low cost fabrication of double box back gate silicon-on-insulator wafers |
US20100176482A1 (en) | 2009-01-12 | 2010-07-15 | International Business Machine Corporation | Low cost fabrication of double box back gate silicon-on-insulator wafers with subsequent self aligned shallow trench isolation |
US7943445B2 (en) * | 2009-02-19 | 2011-05-17 | International Business Machines Corporation | Asymmetric junction field effect transistor |
US8008142B2 (en) * | 2009-03-13 | 2011-08-30 | International Business Machines Corporation | Self-aligned Schottky diode |
US8193616B2 (en) * | 2009-06-29 | 2012-06-05 | Kabushiki Kaisha Toshiba | Semiconductor device on direct silicon bonded substrate with different layer thickness |
US8193032B2 (en) * | 2010-06-29 | 2012-06-05 | International Business Machines Corporation | Ultrathin spacer formation for carbon-based FET |
-
2009
- 2009-11-06 US US12/613,574 patent/US8587063B2/en active Active
-
2010
- 2010-11-03 DE DE112010004307.8T patent/DE112010004307B4/de not_active Expired - Fee Related
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- 2010-11-03 WO PCT/EP2010/066715 patent/WO2011054852A1/en active Application Filing
- 2010-11-03 CN CN201080048967.7A patent/CN102598244B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1828833A (zh) * | 2005-01-18 | 2006-09-06 | 国际商业机器公司 | 半导体结构和制造半导体结构的方法 |
US7282425B2 (en) * | 2005-01-31 | 2007-10-16 | International Business Machines Corporation | Structure and method of integrating compound and elemental semiconductors for high-performance CMOS |
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US8587063B2 (en) | 2013-11-19 |
US20110108943A1 (en) | 2011-05-12 |
DE112010004307B4 (de) | 2017-08-03 |
WO2011054852A1 (en) | 2011-05-12 |
GB201200820D0 (en) | 2012-02-29 |
GB2487307A (en) | 2012-07-18 |
GB2487307B (en) | 2014-02-12 |
DE112010004307T5 (de) | 2012-11-22 |
CN102598244A (zh) | 2012-07-18 |
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