CN102593275A - 制作发光二极管封装结构的方法以及发光二极管元件 - Google Patents
制作发光二极管封装结构的方法以及发光二极管元件 Download PDFInfo
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- CN102593275A CN102593275A CN2011101330039A CN201110133003A CN102593275A CN 102593275 A CN102593275 A CN 102593275A CN 2011101330039 A CN2011101330039 A CN 2011101330039A CN 201110133003 A CN201110133003 A CN 201110133003A CN 102593275 A CN102593275 A CN 102593275A
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- emitting diode
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Images
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510593586.1A CN105789408B (zh) | 2011-01-13 | 2011-05-18 | 制作发光二极管封装结构的方法以及发光二极管元件 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/005,731 US8653542B2 (en) | 2011-01-13 | 2011-01-13 | Micro-interconnects for light-emitting diodes |
US13/005,731 | 2011-01-13 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201510593586.1A Division CN105789408B (zh) | 2011-01-13 | 2011-05-18 | 制作发光二极管封装结构的方法以及发光二极管元件 |
Publications (2)
Publication Number | Publication Date |
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CN102593275A true CN102593275A (zh) | 2012-07-18 |
CN102593275B CN102593275B (zh) | 2015-11-25 |
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CN201110133003.9A Active CN102593275B (zh) | 2011-01-13 | 2011-05-18 | 制作发光二极管封装结构的方法以及发光二极管元件 |
CN201510593586.1A Active CN105789408B (zh) | 2011-01-13 | 2011-05-18 | 制作发光二极管封装结构的方法以及发光二极管元件 |
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CN201510593586.1A Active CN105789408B (zh) | 2011-01-13 | 2011-05-18 | 制作发光二极管封装结构的方法以及发光二极管元件 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8653542B2 (zh) |
KR (1) | KR101279225B1 (zh) |
CN (2) | CN102593275B (zh) |
TW (1) | TWI552387B (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013071687A1 (en) * | 2011-09-12 | 2013-05-23 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode(led)package having wavelength conversion member and wafer level fabrication method |
WO2015165048A1 (zh) * | 2014-04-29 | 2015-11-05 | 陈振贤 | 一种结合led外延结构与led封装基板为一体的垂直式led阵列元件 |
CN109037262A (zh) * | 2017-06-09 | 2018-12-18 | 美商晶典有限公司 | 微发光二极管显示模块的制造方法 |
CN109244100A (zh) * | 2017-07-10 | 2019-01-18 | 英属开曼群岛商錼创科技股份有限公司 | 显示装置 |
CN110323211A (zh) * | 2018-03-28 | 2019-10-11 | 华立捷科技股份有限公司 | 发光芯片封装结构及封装方法 |
CN110494993A (zh) * | 2018-03-14 | 2019-11-22 | 京东方科技集团股份有限公司 | 将多个微型发光二极管转移至目标基板的方法、阵列基板及其显示设备 |
CN111463332A (zh) * | 2019-01-18 | 2020-07-28 | 群创光电股份有限公司 | 具有发光二极管封装体的电子装置 |
CN111630734A (zh) * | 2017-12-15 | 2020-09-04 | 欧司朗Oled股份有限公司 | 用于制造光电子半导体组件的方法和光电子半导体组件 |
CN112714952A (zh) * | 2018-09-21 | 2021-04-27 | 脸谱科技有限责任公司 | 包括贯穿硅通孔的三维电路的堆叠 |
CN116885084A (zh) * | 2023-09-07 | 2023-10-13 | 元旭半导体科技(无锡)有限公司 | 一种自带封装基板的led芯片及其制备方法 |
Families Citing this family (41)
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US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
JP4686625B2 (ja) * | 2009-08-03 | 2011-05-25 | 株式会社東芝 | 半導体発光装置の製造方法 |
US8610161B2 (en) * | 2010-10-28 | 2013-12-17 | Tsmc Solid State Lighting Ltd. | Light emitting diode optical emitter with transparent electrical connectors |
DE102011012924A1 (de) * | 2011-03-03 | 2012-09-06 | Osram Opto Semiconductors Gmbh | Träger für eine optoelektronische Struktur und optoelektronischer Halbleiterchip mit solch einem Träger |
CN103415935B (zh) * | 2011-03-14 | 2016-09-14 | 皇家飞利浦有限公司 | 具有重新分布用于倒装芯片安装的垂直接触件的led |
US8803269B2 (en) * | 2011-05-05 | 2014-08-12 | Cisco Technology, Inc. | Wafer scale packaging platform for transceivers |
WO2013010389A1 (zh) * | 2011-07-15 | 2013-01-24 | 中国科学院半导体研究所 | 发光二极管封装结构及其制造方法 |
US8604491B2 (en) | 2011-07-21 | 2013-12-10 | Tsmc Solid State Lighting Ltd. | Wafer level photonic device die structure and method of making the same |
DE102011052605B4 (de) * | 2011-08-11 | 2014-07-10 | Infineon Technologies Austria Ag | Verfahren zur Herstellung einer Halbleitervorrichtung |
US9490239B2 (en) * | 2011-08-31 | 2016-11-08 | Micron Technology, Inc. | Solid state transducers with state detection, and associated systems and methods |
US20150187993A1 (en) * | 2012-06-14 | 2015-07-02 | Sang Jeong An | Semiconductor light-emitting device and method for manufacturing the same |
KR20140010521A (ko) * | 2012-07-12 | 2014-01-27 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
CN104508841B (zh) * | 2012-07-26 | 2018-05-22 | 安相贞 | 半导体发光器件 |
KR101956101B1 (ko) * | 2012-09-06 | 2019-03-11 | 엘지이노텍 주식회사 | 발광소자 |
CN103681644B (zh) * | 2012-09-14 | 2016-08-17 | 晶元光电股份有限公司 | 具有改进的热耗散和光提取的高压led |
US9444398B2 (en) * | 2013-01-25 | 2016-09-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor structure and fabricating process for the same |
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CN102593275B (zh) | 2015-11-25 |
CN105789408A (zh) | 2016-07-20 |
KR20120082322A (ko) | 2012-07-23 |
US20120181568A1 (en) | 2012-07-19 |
US20140159096A1 (en) | 2014-06-12 |
TWI552387B (zh) | 2016-10-01 |
KR101279225B1 (ko) | 2013-06-26 |
TW201230407A (en) | 2012-07-16 |
US8653542B2 (en) | 2014-02-18 |
CN105789408B (zh) | 2019-01-08 |
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