CN110494993B - 将多个微型发光二极管转移至目标基板的方法、阵列基板及其显示设备 - Google Patents

将多个微型发光二极管转移至目标基板的方法、阵列基板及其显示设备 Download PDF

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CN110494993B
CN110494993B CN201880000158.5A CN201880000158A CN110494993B CN 110494993 B CN110494993 B CN 110494993B CN 201880000158 A CN201880000158 A CN 201880000158A CN 110494993 B CN110494993 B CN 110494993B
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substrate
emitting diodes
light emitting
bonding contacts
micro
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CN110494993A (zh
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黄冠
霍轶杰
刘芳
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Abstract

本申请公开了一种用于将多个微型发光二极管(微型LED)转移至目标基板的方法。所述方法包括：提供具有多个微型LED的阵列的第一基板；提供具有包括多个接合触点的接合层的目标基板；向多个接合触点施加电势；将多个微型LED与具有电势的多个接合触点对准；以及将第一基板中的多个微型LED转移至目标基板上。

Description

将多个微型发光二极管转移至目标基板的方法、阵列基板及 其显示设备
技术领域
本发明涉及显示技术，更具体地，涉及一种用于将多个微型发光二极管转移至目标基板的方法、具有通过所述方法转移的多个微型发光二极管的阵列基板、以及显示设备。
背景技术
近年来，提出和开发了小型化的电光器件，包括微型发光二极管(微型LED)。基于微型LED的显示面板具有高亮度、高对比度、快速响应以及低功耗的优点。基于微型LED的显示技术在显示领域中获得了广泛的应用，包括智能电话和智能手表。
发明内容
一方面，本发明提供了一种用于将多个微型发光二极管(微型LED)转移至目标基板的方法，包括：提供具有多个微型LED的阵列的第一基板；提供具有接合层的目标基板，该接合层包括多个接合触点；向多个接合触点施加电势；将多个微型LED与具有电势的多个接合触点对准；以及将第一基板中的多个微型LED转移至目标基板上。
可选地，多个微型LED中的每一个包括微型p-n二极管和位于所述微型p-n二极管上的金属化块；并且将多个微型LED与多个接合触点对准包括将金属化块与被施加有电势的多个接合触点中的一个对准，金属化块置于微型p-n二极管和多个接合触点中的一个之间。
可选地，将多个微型LED与多个接合触点对准包括放置第一基板和目标基板以使得第一基板和目标基板彼此面对；以及朝向彼此地移动第一基板和目标基板。
可选地，在朝向彼此地移动第一基板和目标基板期间向多个接合触点施加电势。
可选地，向多个接合触点施加电势包括向公共地连接至多个接合触点的信号线施加电势。
可选地，目标基板包括多个薄膜晶体管的阵列，每个薄膜晶体管包括与多个接合触点中的一个电连接的漏极、与公共电极电连接的源极、以及栅极；其中向公共地连接至多个接合触点的信号线施加电势包括分别向多个薄膜晶体管的多个栅极施加多个栅极扫描信号，从而导通多个薄膜晶体管；以及向与多个薄膜晶体管的多个源极电连接的公共电极施加电势，从而向多个接合触点施加电势。
可选地，第一基板是生长基板。
可选地，第一基板是柔性载体基板；所述方法还包括在生长基板上制作多个微型LED；以及将生长基板中的多个微型LED转移至第一基板上。
可选地，在将第一基板中的多个微型LED转移至目标基板上之前，所述方法还包括调整第一基板中的多个微型LED的第一间距以使得第一间距与目标基板中的多个接合触点的第二间距相匹配。
可选地，将多个微型LED转移至目标基板上包括从第一基板剥离多个微型LED。
可选地，将多个微型LED转移至目标基板上包括通过激光剥离从第一基板剥离多个微型LED。
可选地，在将多个微型LED转移至目标基板上之后，所述方法还包括将多个微型LED分别焊接至多个接合触点上。
可选地，将多个微型LED分别焊接至多个接合触点上通过回流焊接进行。
可选地，将多个微型LED分别焊接至多个接合触点上通过激光辅助焊接进行。
可选地，所述电势为正电势。
可选地，在将多个微型LED转移至目标基板上之后，所述方法还包括远离目标基板地移动第一基板。
在另一方面，本发明提供了一种阵列基板，其包括通过本文描述的方法转移的多个微型LED。
在另一方面，本发明提供了一种显示设备，其包括本文描述的阵列基板。
附图说明
以下附图仅为根据所公开的各种实施例的用于示意性目的的示例，而不旨在限制本发明的范围。
图1A至图1F示出了根据本公开的一些实施例中的将多个微型发光二极管转移至目标基板的过程。
图2示出了根据本公开的一些实施例中的向目标基板中的多个接合触点施加电势的过程。
图3是示出根据本公开的一些实施例中的在将多个微型发光二极管转移至目标基板的过程期间第一基板和目标基板的结构的示意图。
图4A和图4B示出了根据本公开的一些实施例中的对多个微型发光二极管与多个接合触点进行电场辅助对准。
图5是示出根据本公开的一些实施例中的具有通过转移方法转移的多个微型LED的阵列基板的结构的示意图。
具体实施方式
现在将参照以下实施例更具体地描述本公开。需注意，以下对一些实施例的描述仅针对示意和描述的目的而呈现于此。其不旨在是穷尽性的或者受限为所公开的确切形式。
在制造微型发光二极管(微型LED)显示面板时，需要将每个微型LED从生长基板转移至目标基板。考虑到显示面板包括数千个至数百万个微型LED，取放转移过程(pick-and-place transfer process)是极其花费时间的，因此不适于大规模制造微型LED显示面板。对取放转移的一种改进是使用打印头来一次转移多个微型LED。然而，使用打印头转移大量微型LED的过程相当复杂且花费时间。此外，在取放转移或利用打印头的转移过程中，频繁地出现微型LED与目标基板中的接合触点对不准，导致显示面板的缺陷。
因此，本公开特别提供了一种用于将多个微型发光二极管转移至目标基板的方法、具有通过所述方法转移的多个微型LED的阵列基板、以及显示设备，其基本上避免了由于相关技术的局限和缺点所导致的问题中的一个或多个。在一方面，本公开提供了一种用于将多个微型发光二极管转移至目标基板的方法。在一些实施例中，所述方法包括：提供具有多个微型LED的阵列的第一基板；提供具有包括多个接合触点的接合层的目标基板；向多个接合触点施加电势；将多个微型LED与具有电势的多个接合触点对准；以及将第一基板中的多个微型LED转移至目标基板上。
图1A至图1F示出了根据本公开的一些实施例中的将多个微型发光二极管转移至目标基板的过程。参照图1A，一些实施例中的该方法包括：提供具有第一基底基板100上的多个微型LED 11的阵列的第一基板1。参照图1B，一些实施例中的该方法还包括：提供具有第二基底基板200上的包括多个接合触点210的接合层21的目标基板2。参照图1C，一些实施例中的该方法还包括放置第一基板1和目标基板2以使得第一基板1和目标基板2彼此面对；以及朝向彼此地移动第一基板1和目标基板2。参照图1D，一些实施例中的该方法还包括向多个接合触点210施加电势(例如，如图1D中的正电荷所指示的正电势)，以及将多个微型LED 11与具有电势的多个接合触点210对准。参照图1E，一些实施例中的该方法还包括将第一基板1中的多个微型LED 11转移至目标基板2上。参照图1F，一些实施例中的该方法还包括远离目标基板2地移动第一基板1，从而形成阵列基板3。阵列基板3包括转移至多个接合触点210的多个微型LED 11。
可选地，施加至多个接合触点210的电势为正电势(例如，大于1V，大于5V，以及大于10V)。可选地，施加至多个接合触点210的电势为负电势(例如，小于-1V，小于-5V，以及小于-10V)。
在该方法中，通过施加至接合层21的电势来辅助多个微型LED 11与多个接合触点210的对准。多个接合触点210上的电势在对准过程中使得多个微型LED 11极化，从而在多个接合触点210和(极化了的)多个微型LED 11之间产生吸引力。该吸引力极大地增强了对准过程的准确性和可靠性，实现了高效和准确地将多个微型LED 11从第一基板1转移至目标基板2。
在一些实施例中，多个微型LED 11中的每一个包括微型p-n二极管110和位于所述微型p-n二极管110上的金属化块120。将多个微型LED 11与多个接合触点210对准的步骤包括将金属化块120与被施加有电势的多个接合触点210中的一个对准，金属化块120在对准过程期间置于微型p-n二极管110和多个接合触点210中的一个之间。可选地，在整个对准过程期间向接合层21施加电势。可选地，在朝向彼此地移动第一基板1和目标基板2期间执行向多个接合触点210施加电势的步骤。可选地，在朝向彼此地移动第一基板1和目标基板2的步骤之前执行向多个接合触点210施加电势的步骤。可选地，在朝向彼此地移动第一基板1和目标基板2的步骤之前执行向多个接合触点210施加电势的步骤，并且在朝向彼此地移动第一基板1和目标基板2的步骤中始终维持多个接合触点210处的电势，直到完成对准过程为止。
在一些实施例中，微型p-n二极管110包括具有与光谱中的特定区域对应的带隙的复合半导体。可选地，微型p-n二极管110包括一个或多个基于II-VI材料(例如，ZnSe)或III-V氮化物材料(例如，GaN、AlN、InN及它们的合金)的层。可选地，在第一基底基板100上形成微型p-n二极管110。可选地，第一基底基板100是生长基板。可选地，第一基底基板100是柔性载体基板。可选地，生长基板由硅、SiC、GaAs、GaN和蓝宝石(Al2O3)中的一者或它们的组合制成。可选地，第一基底基板100是蓝宝石生长基板，并且微型p-n二极管110由GaN形成。
在一些实施例中，第一基板1包括一金属化层12，其包括多个微型p-n二极管110中的多个金属化块120。可选的，金属化层12包括电极层并且可选地包括阻挡层。在一个示例中，电极层与微型p-n二极管110的p掺杂GaN层欧姆接触。可选地，电极层包括高功函数金属，比如Ni、Au、Ag、Pd和Pt。可选地，电极层由反射材料制成。可选地，电极层由透明材料制成。阻挡层用于防止杂质扩散至微型p-n二极管110，例如，用于防止接合层的组分扩散至微型p-n二极管110。可选地，阻挡层包括Pd、Pt、Ni、Ta、Ti和TiW。
可选地，金属化层12的厚度在约0.1μm至约20μm的范围内，例如，在约0.1μm至约0.2μm的范围内，在约0.2μm至约0.5μm的范围内，在约0.5μm至约1μm的范围内，在约1μm至约2μm的范围内，在约2μm至约5μm的范围内，在约5μm至约10μm的范围内，在约10μm至约15μm的范围内以及在约15μm至约20μm的范围内。
各种适当材料和各种适当制造方法可以用于形成接合层21。适当接合层材料的示例包括铟、锡、金、银、钼、铝、以及它们的叠层或合金。可选地，接合层21的厚度在约0.1μm至约5μm的范围内，例如，在约0.1μm至约0.2μm的范围内，在约0.2μm至约0.5μm的范围内，在约0.5μm至约1μm的范围内，在约1μm至约2μm的范围内，在约2μm至约3μm的范围内，在约3μm至约4μm的范围内以及在约4μm至约5μm的范围内。
在一些实施例中，向接合层21施加电势的步骤包括向公共地连接至多个接合触点210的信号线施加电势。图2示出了根据本公开的一些实施例中的向目标基板中的多个接合触点施加电势的过程。参照图2，通过公共地连接至多个接合触点210的信号线SL向多个接合触点210施加电势V。在一个示例中，多个微型LED 11被转移至目标基板以制作无源矩阵微型LED显示面板。可选地，通过公共地连接至多个接合触点210的公共电极信号线向多个接合触点210施加电势。
图3是示出根据本公开的一些实施例中的在将多个微型发光二极管转移至目标基板的过程期间第一基板和目标基板的结构的示意图。参照图3，目标基板2包括多个薄膜晶体管TFT的阵列。多个薄膜晶体管TFT中的每一个包括与多个接合触点210中的一个电连接的漏极D、与公共电极220电连接的源极S、以及与栅线GL电连接的栅极G。在一些实施例中，向公共地连接至多个接合触点210的信号线施加电势的步骤包括分别向多个薄膜晶体管TFT的多个栅极施加多个栅极扫描信号，从而导通多个薄膜晶体管TFT；以及向与多个薄膜晶体管TFT的多个源极电连接的公共电极220施加电势，从而向多个接合触点210施加电势。可选地，公共电极220是阴极。
图4A和图4B示出了根据本公开的一些实施例中的对多个微型发光二极管与多个接合触点进行电场辅助对准。参照图4A，施加至多个接合触点210中的一个接合触点的电势形成了电场E，该电场E使得多个金属化块120中的一个金属化块极化。电场E在多个金属化块120中的该一个金属化块中引起极化电荷分布。在一个示例中，如图4A所示，电势是正电势。电场E在多个金属化块120中的该一个金属化块中引起极化电荷分布，使得负电荷在多个金属化块120中的该一个金属化块的靠近多个接合触点210中的该一个接合触点的第一侧累积，并且使得正电荷在多个金属化块120中的该一个金属化块的远离多个接合触点210中的该一个接合触点的第二侧累积。多个金属化块120中的该一个金属化块的累积有负电荷第一侧被吸引至多个接合触点210中的该一个接合触点。由于多个金属化块120中的该一个金属化块与多个接合触点210中的该一个接合触点之间的这种吸引力，它们彼此对准。
参照图4B，多个金属化块120中的该一个金属化块与多个接合触点210中的该一个接合触点未对准。由于电场E的分布，多个金属化块120中的该一个金属化块受到两个力：将多个金属化块120中的该一个金属化块拉向多个接合触点210中的该一个接合触点的第一力Fd，以及将多个金属化块120中的该一个金属化块与多个接合触点210中的该一个接合触点相对彼此重新对准的第二力Fc。
在一些实施例中，将多个微型LED 11转移至目标基板2上的步骤包括从第一基板1剥离多个微型LED 11。各种适当的剥离方法可以用于从第一基板1剥离多个微型LED 11。在一些实施例中，可执行激光剥离工艺来从第一基板1分离多个微型LED 11(参见图1E)。该激光剥离工艺使用准直高能UV激光束(例如，266nm)。可选地，激光剥离工艺是准分子激光剥离工艺。在一些实施例中，可执行化学剥离工艺来从第一基板1分离多个微型LED 11。在一些实施例中，可执行机械剥离工艺来从第一基板1分离多个微型LED 11。在一些实施例中，从第一基板1剥离多个微型LED 11的步骤包括激光剥离工艺、化学剥离工艺程和机械剥离工艺中的一者或其组合。可选地，随后将多个微型LED 11浸入溶池(例如，丙酮溶池)，从而进一步地从第一基板1分离多个微型LED 11。
在一些实施例中，在将多个微型LED 11转移至目标基板2上之后，所述方法还包括将多个微型LED 11分别焊接至多个接合触点210上。可选地，将多个微型LED 11分别焊接至多个接合触点210上的步骤通过回流焊接进行。可选地，将多个微型LED 11分别焊接至多个接合触点210上的步骤通过激光辅助焊接执行，在激光辅助焊接中，激光辐射被多个接合触点210吸收，从而将多个微型LED 11分别焊接至多个接合触点210上。可选地，将多个微型LED 11分别焊接至多个接合触点210上的步骤通过激光焊接进行。可选地，将多个微型LED11分别焊接至多个接合触点210上的步骤通过红外焊接进行。
在一些实施例中,第一基板1是生长基板,并且多个微型LED 11被直接地转移至目标基板2从而形成具有多个微型LED 11的阵列基板。
在一些实施例中，第一基板1是载体基板，例如，柔性载体基板。相应地，在将多个微型LED 11从第一基板1转移至目标基板2之前，一些实施例中的该方法还包括在生长基板上制造多个微型LED 11；以及将生长基板中的多个微型LED 11转移至第一基板1。
在一些实施例中，在将第一基板1中的多个微型LED 11转移至目标基板2之前，所述方法还包括调整第一基板1中的多个微型LED 11的第一间距以使得第一间距与目标基板2中的多个接合触点210的第二间距相匹配。可选地，通过拉伸第一基板1(例如，柔性载体基板)来调整第一基板1中的多个微型LED 11的第一间距。
在另一方面，本公开提供了一种阵列基板，其具有通过本文描述的方法转移的多个微型LED。图5是示出根据本公开的一些实施例中的具有通过转移方法转移的多个微型LED的阵列基板的结构的示意图。参照图5，一些实施例中的阵列基板3包括第二基底基板200、第二基底基板200上的具有多个接合触点210的接合层21、具有多个金属化块120且位于接合层21的远离第二基底基板200的一侧的金属化层12、以及位于金属化层12的远离接合层21的一侧的多个微型p-n二极管110。
在另一方面，本公开提供了一种显示设备，其具有本文描述的阵列基板或通过本文描述的方法制造的阵列基板。适当显示设备的示例包括但不限于：电子纸、移动电话、平板计算机、电视、监视器、笔记本计算机、数字相框、GPS等。
出于示意和描述目的已示出对本发明实施例的上述描述。其并非旨在穷举或将本发明限制为所公开的确切形式或示例性实施例。因此，上述描述应当被认为是示意性的而非限制性的。显然，许多修改和变形对于本领域技术人员而言将是显而易见的。选择和描述这些实施例是为了解释本发明的原理和其最佳方式的实际应用，从而使得本领域技术人员能够理解本发明适用于特定用途或所构思的实施方式的各种实施例及各种变型。本发明的范围旨在由所附权利要求及其等同形式限定，其中除非另有说明，否则所有术语以其最宽的合理意义解释。因此，术语“发明”、“本发明”等不一定将权利范围限制为具体实施例，并且对本发明示例性实施例的参考不隐含对本发明的限制，并且不应推断出这种限制。本发明仅由随附权利要求的精神和范围限定。此外，这些权利要求可涉及使用跟随有名词或元素的“第一”、“第二”等术语。这种术语应当理解为一种命名方式而非意在对由这种命名方式修饰的元素的数量进行限制，除非给出具体数量。所描述的任何优点和益处不一定适用于本发明的全部实施例。应当认识到的是，本领域技术人员在不脱离随附权利要求所限定的本发明的范围的情况下可以对所描述的实施例进行变化。此外，本公开中没有元件和组件是意在贡献给公众的，无论该元件或组件是否明确地记载在随附权利要求中。

Claims (12)

1.一种用于将多个微型发光二极管转移至目标基板的方法，包括：
提供具有所述多个微型发光二极管的阵列的第一基板；
提供具有接合层的目标基板，所述接合层包括多个接合触点；
向所述多个接合触点施加电势；
将所述多个微型发光二极管与具有所述电势的所述多个接合触点对准；以及
将所述第一基板中的所述多个微型发光二极管转移至所述目标基板上；
将所述多个微型发光二极管与所述多个接合触点对准包括：
放置所述第一基板和所述目标基板以使得所述第一基板和所述目标基板彼此面对；以及
朝向彼此地移动所述第一基板和所述目标基板；
在朝向彼此地移动所述第一基板和所述目标基板期间向所述多个接合触点施加所述电势；
向所述多个接合触点施加所述电势包括：向公共地连接至所述多个接合触点的信号线施加所述电势；
所述目标基板包括多个薄膜晶体管的阵列，每个薄膜晶体管包括与所述多个接合触点中的一个电连接的漏极、与公共电极电连接的源极、以及栅极；
其中，向公共地连接至所述多个接合触点的所述信号线施加所述电势包括：
分别向所述多个薄膜晶体管的多个栅极施加多个栅极扫描信号，从而导通所述多个薄膜晶体管；以及
向与所述多个薄膜晶体管的多个源极电连接的所述公共电极施加所述电势，从而向所述多个接合触点施加所述电势。
2.根据权利要求1所述的方法，其中，所述多个微型发光二极管中的每一个包括微型p-n二极管和位于所述微型p-n二极管上的金属化块；并且
将所述多个微型发光二极管与所述多个接合触点对准包括将所述金属化块与被施加有所述电势的所述多个接合触点中的一个对准，所述金属化块置于所述微型p-n二极管和所述多个接合触点中的一个之间。
3.根据权利要求1所述的方法，其中，所述第一基板是生长基板。
4.根据权利要求1所述的方法，其中，所述第一基板是柔性载体基板；
所述方法还包括：
在生长基板上制作所述多个微型发光二极管；以及
将所述生长基板中的所述多个微型发光二极管转移至所述第一基板上。
5.根据权利要求4所述的方法，其中，在将所述第一基板中的所述多个微型发光二极管转移至所述目标基板上之前，还包括：
调整所述第一基板中的所述多个微型发光二极管的第一间距，以使得所述第一间距与所述目标基板中的所述多个接合触点的第二间距相匹配。
6.根据权利要求1所述的方法，其中，将所述多个微型发光二极管转移至所述目标基板上包括从所述第一基板剥离所述多个微型发光二极管。
7.根据权利要求1所述的方法，其中，将所述多个微型发光二极管转移至所述目标基板上包括通过激光剥离从所述第一基板剥离所述多个微型发光二极管。
8.根据权利要求1所述的方法，其中，在将所述多个微型发光二极管转移至所述目标基板上之后，还包括将所述多个微型发光二极管分别焊接至所述多个接合触点上。
9.根据权利要求8所述的方法，其中，将所述多个微型发光二极管分别焊接至所述多个接合触点上通过回流焊接进行。
10.根据权利要求8所述的方法，其中，将所述多个微型发光二极管分别焊接至所述多个接合触点上通过激光辅助焊接进行。
11.根据权利要求1所述的方法，其中，所述电势是正电势。
12.根据权利要求1所述的方法，其中，在将所述多个微型发光二极管转移至所述目标基板上之后，还包括远离所述目标基板地移动所述第一基板。
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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11424214B1 (en) * 2019-10-10 2022-08-23 Meta Platforms Technologies, Llc Hybrid interconnect for laser bonding using nanoporous metal tips
TWI740484B (zh) * 2020-05-04 2021-09-21 宏碁股份有限公司 顯示裝置與其製造方法
JP2022000676A (ja) * 2020-06-19 2022-01-04 株式会社ジャパンディスプレイ 表示装置の製造方法
GB2596533B (en) * 2020-06-29 2023-02-15 Plessey Semiconductors Ltd Hybrid microdisplay
US11973054B2 (en) * 2021-05-06 2024-04-30 Stroke Precision Advanced Engineering Co., Ltd. Method for transferring electronic device
CN114141930A (zh) * 2021-11-22 2022-03-04 惠州华星光电显示有限公司 发光二极管的转移方法、发光基板以及显示面板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6156626A (en) * 1999-02-27 2000-12-05 Philips Electronics North America Corp. Electromigration bonding process and system
CN102593275A (zh) * 2011-01-13 2012-07-18 台湾积体电路制造股份有限公司 制作发光二极管封装结构的方法以及发光二极管元件
CN106165218A (zh) * 2014-02-10 2016-11-23 天空激光二极管有限公司 可制造的激光二极管
CN107369647A (zh) * 2017-08-29 2017-11-21 京东方科技集团股份有限公司 一种led阵列基板及其制备方法、显示装置

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002253875A1 (en) * 2001-01-22 2002-09-04 Nanopierce Technologies, Inc. Optical device module and method of fabrication
WO2002088812A1 (de) * 2001-04-30 2002-11-07 Infineon Technologies Ag Anordnung zur detektion von optischen signalen eines planaren optischen schaltkreises
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
US6927382B2 (en) * 2002-05-22 2005-08-09 Agilent Technologies Optical excitation/detection device and method for making same using fluidic self-assembly techniques
US7476557B2 (en) * 2004-03-29 2009-01-13 Articulated Technologies, Llc Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
US7654816B2 (en) 2004-10-07 2010-02-02 Hewlett-Packard Development Company, L.P. Lithographic mask alignment
US20080047939A1 (en) * 2006-08-25 2008-02-28 Stefan Hummelt Process and apparatus for joining at least two elements
WO2008049006A2 (en) * 2006-10-17 2008-04-24 Fry's Metals, Inc. Materials for use with interconnects of electrical devices and related methods
KR101519038B1 (ko) * 2007-01-17 2015-05-11 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 프린팅­기반 어셈블리에 의해 제조되는 광학 시스템
CN101521251A (zh) * 2008-02-28 2009-09-02 杭州士兰明芯科技有限公司 一种垂直结构的发光二极管制造方法
US20120119241A1 (en) * 2010-11-17 2012-05-17 Luminus Devices, Inc. Etendue and Light Extraction System and Method
WO2012158709A1 (en) * 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Thermally managed led arrays assembled by printing
US8791530B2 (en) * 2012-09-06 2014-07-29 LuxVue Technology Corporation Compliant micro device transfer head with integrated electrode leads
CN102969311B (zh) * 2012-11-27 2015-02-11 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
US9391042B2 (en) * 2012-12-14 2016-07-12 Apple Inc. Micro device transfer system with pivot mount
US9314930B2 (en) * 2012-12-14 2016-04-19 LuxVue Technology Corporation Micro pick up array with integrated pivot mount
US10224460B2 (en) * 2014-06-18 2019-03-05 X-Celeprint Limited Micro assembled LED displays and lighting elements
JP6626504B2 (ja) 2014-10-28 2019-12-25 アナログ ディヴァイスィズ インク 転写印刷方法
CN107431107B (zh) 2015-04-01 2020-07-24 歌尔股份有限公司 微发光二极管的转移方法、制造方法、装置和电子设备
EP3271951B1 (en) * 2015-05-21 2019-03-20 Goertek Inc. Transferring method, manufacturing method of micro-led
US10224308B2 (en) 2015-07-14 2019-03-05 Goertek, Inc. Transferring method, manufacturing method, device and electronic apparatus of micro-LED
CN105493257A (zh) 2015-07-14 2016-04-13 歌尔声学股份有限公司 倒装裸片的组装方法、制造方法、装置和电子设备
WO2017028206A1 (en) 2015-08-18 2017-02-23 Goertek.Inc Repairing method, manufacturing method, device and electronic apparatus of micro-led
WO2017034268A1 (ko) * 2015-08-21 2017-03-02 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
JP6288009B2 (ja) 2015-08-31 2018-03-07 日亜化学工業株式会社 発光装置の製造方法
KR102393374B1 (ko) 2015-08-31 2022-05-03 삼성디스플레이 주식회사 표시 장치 및 상기 표시 장치의 제조 방법
TWI581355B (zh) * 2015-11-06 2017-05-01 友達光電股份有限公司 轉置微元件的方法
US10068888B2 (en) * 2015-12-21 2018-09-04 Hong Kong Beida Jade Bird Display Limited Making semiconductor devices with alignment bonding and substrate removal
US20170215280A1 (en) 2016-01-21 2017-07-27 Vuereal Inc. Selective transfer of micro devices
TWM521008U (zh) * 2016-01-27 2016-05-01 Lite On Technology Corp 車燈裝置及其發光模組
JP2017157724A (ja) 2016-03-02 2017-09-07 デクセリアルズ株式会社 表示装置及びその製造方法、並びに発光装置及びその製造方法
EP3440714A1 (en) 2016-04-04 2019-02-13 Glo Ab Through backplane laser irradiation for die transfer
US10121710B2 (en) * 2016-06-14 2018-11-06 Innolux Corporation Methods for manufacturing a display device
WO2018030695A1 (ko) * 2016-08-11 2018-02-15 주식회사 루멘스 엘이디 모듈 및 그 제조방법
KR102631259B1 (ko) * 2016-09-22 2024-01-31 삼성디스플레이 주식회사 디스플레이 장치
US10217729B2 (en) * 2016-09-30 2019-02-26 Intel Corporation Apparatus for micro pick and bond
KR20190019745A (ko) * 2017-08-18 2019-02-27 주식회사 루멘스 발광소자 및 그 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6156626A (en) * 1999-02-27 2000-12-05 Philips Electronics North America Corp. Electromigration bonding process and system
CN102593275A (zh) * 2011-01-13 2012-07-18 台湾积体电路制造股份有限公司 制作发光二极管封装结构的方法以及发光二极管元件
CN106165218A (zh) * 2014-02-10 2016-11-23 天空激光二极管有限公司 可制造的激光二极管
CN107369647A (zh) * 2017-08-29 2017-11-21 京东方科技集团股份有限公司 一种led阵列基板及其制备方法、显示装置

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