CN102576790B - 光电子部件 - Google Patents

光电子部件 Download PDF

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Publication number
CN102576790B
CN102576790B CN201080044010.5A CN201080044010A CN102576790B CN 102576790 B CN102576790 B CN 102576790B CN 201080044010 A CN201080044010 A CN 201080044010A CN 102576790 B CN102576790 B CN 102576790B
Authority
CN
China
Prior art keywords
carrier
optoelectronic
semiconductor chip
optoelectronic semiconductor
optoelectronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080044010.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN102576790A (zh
Inventor
K.米勒
G.施帕特
S.赫尔曼
E.K.M.京特
H.布鲁纳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN102576790A publication Critical patent/CN102576790A/zh
Application granted granted Critical
Publication of CN102576790B publication Critical patent/CN102576790B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Device Packages (AREA)
CN201080044010.5A 2009-09-30 2010-08-31 光电子部件 Expired - Fee Related CN102576790B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102009047878.7 2009-09-30
DE102009047878 2009-09-30
DE102009051746.4 2009-11-03
DE102009051746A DE102009051746A1 (de) 2009-09-30 2009-11-03 Optoelektronisches Bauelement
PCT/EP2010/062733 WO2011039023A1 (de) 2009-09-30 2010-08-31 Optoelektronisches bauelement

Publications (2)

Publication Number Publication Date
CN102576790A CN102576790A (zh) 2012-07-11
CN102576790B true CN102576790B (zh) 2016-08-03

Family

ID=43662656

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080044010.5A Expired - Fee Related CN102576790B (zh) 2009-09-30 2010-08-31 光电子部件

Country Status (8)

Country Link
US (1) US8853732B2 (https=)
EP (1) EP2483937B1 (https=)
JP (1) JP2013506976A (https=)
KR (1) KR20120091173A (https=)
CN (1) CN102576790B (https=)
DE (1) DE102009051746A1 (https=)
TW (1) TW201126775A (https=)
WO (1) WO2011039023A1 (https=)

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* Cited by examiner, † Cited by third party
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DE102011105010A1 (de) * 2011-06-20 2012-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung
DE102012200416B4 (de) 2012-01-12 2018-03-01 Osram Opto Semiconductors Gmbh Optoelektronisches modul und verfahren zur herstellung eines optoelektronischen moduls
DE102012101463A1 (de) * 2012-02-23 2013-08-29 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und derart hergestelltes optoelektronisches Bauelement
DE102012108160A1 (de) 2012-09-03 2014-03-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102014101489B4 (de) * 2014-02-06 2023-03-02 Pictiva Displays International Limited Verfahren zur Herstellung einer optoelektronischen Anordnung
DE102014101492A1 (de) 2014-02-06 2015-08-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102015208704A1 (de) * 2015-05-11 2016-11-17 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102015114010A1 (de) * 2015-08-24 2017-03-02 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Verfahren zum Betrieb eines optoelektronischen Bauelements
DE102015118433A1 (de) * 2015-10-28 2017-05-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
KR102487685B1 (ko) * 2015-11-10 2023-01-16 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 구비한 조명 장치
DE102016104383A1 (de) * 2016-03-10 2017-09-14 Osram Opto Semiconductors Gmbh Verfahren und optoelektronische Leuchtvorrichtung zum Beleuchten eines Gesichts einer Person sowie Kamera und mobiles Endgerät
DE102016108682A1 (de) 2016-05-11 2017-11-16 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102018101582B4 (de) * 2018-01-24 2022-10-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlung emittierende Vorrichtung
KR102567568B1 (ko) * 2018-04-06 2023-08-16 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자 패키지
EP3591345B1 (de) * 2018-07-02 2020-11-11 Dr. Johannes Heidenhain GmbH Verfahren zur herstellung einer lichtquelle für eine sensoreinheit einer positionsmesseinrichtung sowie eine positionsmesseinrichtung

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CN1761079A (zh) * 2004-08-31 2006-04-19 丰田合成株式会社 光发射装置和光发射元件
WO2006054616A1 (en) * 2004-11-22 2006-05-26 Matsushita Electric Industrial Co., Ltd. Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
US20070221935A1 (en) * 2006-03-24 2007-09-27 Advanced Optoelectronic Technology Inc. Package structure of light-emitting diode
US20070272940A1 (en) * 2003-06-27 2007-11-29 Lee Kong W Semiconductor device with a light emitting semiconductor die
US20080258168A1 (en) * 2007-04-18 2008-10-23 Samsung Electronics Co, Ltd. Semiconductor light emitting device packages and methods

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TWI289944B (en) 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
JP2002335020A (ja) 2001-05-10 2002-11-22 Nichia Chem Ind Ltd 発光装置
JP4876356B2 (ja) 2001-09-05 2012-02-15 ソニー株式会社 回路素子内蔵基板の製造方法、並びに電気回路装置の製造方法
US8455994B2 (en) * 2002-01-31 2013-06-04 Imbera Electronics Oy Electronic module with feed through conductor between wiring patterns
DE10233050B4 (de) * 2002-07-19 2012-06-14 Osram Opto Semiconductors Gmbh Lichtquelle auf LED-Basis für die Erzeugung von Licht unter Ausnutzung des Farbmischprinzips
JP2004363279A (ja) * 2003-06-04 2004-12-24 Sony Corp 光電変換装置の製造方法、並びにその製造に用いる疑似ウェーハの製造方法
JP4458804B2 (ja) * 2003-10-17 2010-04-28 シチズン電子株式会社 白色ｌｅｄ
JP2005322722A (ja) * 2004-05-07 2005-11-17 Korai Kagi Kofun Yugenkoshi 発光ダイオード
JP2008504698A (ja) 2004-06-30 2008-02-14 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 発光ダイオード装置、光学式記録装置および少なくとも１つの発光ダイオードをパルス状に作動させる方法
WO2006005062A2 (en) * 2004-06-30 2006-01-12 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
JP2006100787A (ja) 2004-08-31 2006-04-13 Toyoda Gosei Co Ltd 発光装置および発光素子
DE102004050371A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer drahtlosen Kontaktierung
JP2006313825A (ja) * 2005-05-09 2006-11-16 Sony Corp 表示装置および表示装置の製造方法
US7754507B2 (en) 2005-06-09 2010-07-13 Philips Lumileds Lighting Company, Llc Method of removing the growth substrate of a semiconductor light emitting device
CN100472830C (zh) * 2005-08-25 2009-03-25 夏普株式会社 半导体发光器件制造方法
TWI418054B (zh) * 2006-08-08 2013-12-01 Ｌｇ電子股份有限公司 發光裝置封裝與製造此封裝之方法
KR101271225B1 (ko) * 2006-10-31 2013-06-03 삼성디스플레이 주식회사 발광 다이오드 칩 및 발광 다이오드 광원 모듈의 제조 방법
TWI320608B (en) * 2006-12-06 2010-02-11 Chipmos Technologies Inc Light emitting chip package and light source module
KR100947454B1 (ko) * 2006-12-19 2010-03-11 서울반도체 주식회사 다단 구조의 열전달 슬러그 및 이를 채용한 발광 다이오드패키지
DE102007022947B4 (de) * 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
JP5158472B2 (ja) 2007-05-24 2013-03-06 スタンレー電気株式会社 半導体発光装置
DE102007030129A1 (de) 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
JP2009049267A (ja) * 2007-08-22 2009-03-05 Toshiba Corp 半導体発光素子及びその製造方法
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Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
US20070272940A1 (en) * 2003-06-27 2007-11-29 Lee Kong W Semiconductor device with a light emitting semiconductor die
CN1761079A (zh) * 2004-08-31 2006-04-19 丰田合成株式会社 光发射装置和光发射元件
WO2006054616A1 (en) * 2004-11-22 2006-05-26 Matsushita Electric Industrial Co., Ltd. Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
US20070221935A1 (en) * 2006-03-24 2007-09-27 Advanced Optoelectronic Technology Inc. Package structure of light-emitting diode
US20080258168A1 (en) * 2007-04-18 2008-10-23 Samsung Electronics Co, Ltd. Semiconductor light emitting device packages and methods

Also Published As

Publication number Publication date
DE102009051746A1 (de) 2011-03-31
US20120248492A1 (en) 2012-10-04
EP2483937A1 (de) 2012-08-08
KR20120091173A (ko) 2012-08-17
TW201126775A (en) 2011-08-01
CN102576790A (zh) 2012-07-11
JP2013506976A (ja) 2013-02-28
US8853732B2 (en) 2014-10-07
EP2483937B1 (de) 2019-01-09
WO2011039023A1 (de) 2011-04-07

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Granted publication date: 20160803