CN102569305A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN102569305A CN102569305A CN2012100204442A CN201210020444A CN102569305A CN 102569305 A CN102569305 A CN 102569305A CN 2012100204442 A CN2012100204442 A CN 2012100204442A CN 201210020444 A CN201210020444 A CN 201210020444A CN 102569305 A CN102569305 A CN 102569305A
- Authority
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- China
- Prior art keywords
- film
- conducting
- metal silicide
- gate electrode
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims description 81
- 239000002184 metal Substances 0.000 claims description 80
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 229920005591 polysilicon Polymers 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 238000003860 storage Methods 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 33
- 238000009792 diffusion process Methods 0.000 description 19
- 239000011229 interlayer Substances 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 15
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- 238000002955 isolation Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 239000010410 layer Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- MFHHXXRRFHXQJZ-UHFFFAOYSA-N NONON Chemical compound NONON MFHHXXRRFHXQJZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229940090044 injection Drugs 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006251599A JP4364225B2 (ja) | 2006-09-15 | 2006-09-15 | 半導体装置およびその製造方法 |
JP251599/2006 | 2006-09-15 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101821814A Division CN101145560B (zh) | 2006-09-15 | 2007-09-14 | 半导体器件的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102569305A true CN102569305A (zh) | 2012-07-11 |
CN102569305B CN102569305B (zh) | 2015-03-25 |
Family
ID=38834983
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101185276A Active CN101794790B (zh) | 2006-09-15 | 2007-09-14 | 半导体器件及其制造方法 |
CN201210020445.7A Active CN102522406B (zh) | 2006-09-15 | 2007-09-14 | 半导体器件及其制造方法 |
CN2007101821814A Active CN101145560B (zh) | 2006-09-15 | 2007-09-14 | 半导体器件的制造方法 |
CN201210020444.2A Active CN102569305B (zh) | 2006-09-15 | 2007-09-14 | 半导体器件及其制造方法 |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101185276A Active CN101794790B (zh) | 2006-09-15 | 2007-09-14 | 半导体器件及其制造方法 |
CN201210020445.7A Active CN102522406B (zh) | 2006-09-15 | 2007-09-14 | 半导体器件及其制造方法 |
CN2007101821814A Active CN101145560B (zh) | 2006-09-15 | 2007-09-14 | 半导体器件的制造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8143662B2 (zh) |
EP (1) | EP1901346B1 (zh) |
JP (1) | JP4364225B2 (zh) |
KR (1) | KR100895757B1 (zh) |
CN (4) | CN101794790B (zh) |
TW (3) | TWI441284B (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4364225B2 (ja) * | 2006-09-15 | 2009-11-11 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP2008294220A (ja) * | 2007-05-24 | 2008-12-04 | Toshiba Corp | 半導体メモリ装置 |
JP2011035228A (ja) * | 2009-08-04 | 2011-02-17 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
KR20110101967A (ko) * | 2010-03-10 | 2011-09-16 | 삼성전자주식회사 | 반도체 소자 및 이를 제조하는 방법 |
JP5839807B2 (ja) * | 2011-02-09 | 2016-01-06 | キヤノン株式会社 | 固体撮像装置の製造方法 |
US8794075B2 (en) * | 2011-08-11 | 2014-08-05 | Nxp, B.V. | Multilayered NONON membrane in a MEMS sensor |
US8847302B2 (en) * | 2012-04-10 | 2014-09-30 | Sandisk Technologies Inc. | Vertical NAND device with low capacitance and silicided word lines |
US8969153B2 (en) | 2013-07-01 | 2015-03-03 | Sandisk Technologies Inc. | NAND string containing self-aligned control gate sidewall cladding |
CN104752359B (zh) * | 2013-12-30 | 2017-12-29 | 中芯国际集成电路制造(上海)有限公司 | 存储器件及其形成方法 |
CN105355599B (zh) * | 2014-08-18 | 2018-09-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体存储器件及其制备方法、电子装置 |
TWI555213B (zh) | 2014-09-04 | 2016-10-21 | 力晶科技股份有限公司 | 快閃記憶體閘極結構及其製作方法 |
CN105990117A (zh) * | 2015-02-04 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | 一种降低栅电阻的方法 |
WO2016194211A1 (ja) * | 2015-06-04 | 2016-12-08 | 株式会社 東芝 | 半導体記憶装置及びその製造方法 |
US9673207B2 (en) * | 2015-08-20 | 2017-06-06 | Sandisk Technologies Llc | Shallow trench isolation trenches and methods for NAND memory |
US9876019B1 (en) | 2016-07-13 | 2018-01-23 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with programmable memory and methods for producing the same |
CN106992183B (zh) * | 2017-04-24 | 2020-01-24 | 上海华力微电子有限公司 | 一种电荷捕获型非易失存储器及其制作方法 |
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US5726479A (en) * | 1995-01-12 | 1998-03-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having polysilicon electrode minimization resulting in a small resistance value |
JP2000150681A (ja) * | 1998-11-16 | 2000-05-30 | Toshiba Corp | 半導体装置 |
US6074915A (en) * | 1998-08-17 | 2000-06-13 | Taiwan Semiconductor Manufacturing Company | Method of making embedded flash memory with salicide and sac structure |
US6383882B1 (en) * | 2000-08-21 | 2002-05-07 | Samsung Electronics Co., Ltd. | Method for fabricating MOS transistor using selective silicide process |
JP2003234421A (ja) * | 2002-02-06 | 2003-08-22 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置およびその製造方法 |
US20040043594A1 (en) * | 2002-09-02 | 2004-03-04 | Thorsten Kammler | Semiconductor device having a polysilicon line structure with increased metal silicide portions and method for forming the polysilicon line structure of a semiconductor device |
CN1591837A (zh) * | 2003-09-01 | 2005-03-09 | 海力士半导体有限公司 | 用于制造闪存器件的方法 |
US20050218460A1 (en) * | 2004-03-19 | 2005-10-06 | Takehiro Hasegawa | Semiconductor integrated circuit device with a stacked gate including a floating gate and a control gate |
US20050236661A1 (en) * | 2000-09-26 | 2005-10-27 | Michiharu Matsui | Nonvolatile semiconductor memory device having element isolating region of trench type |
US20060001073A1 (en) * | 2003-05-21 | 2006-01-05 | Jian Chen | Use of voids between elements in semiconductor structures for isolation |
US20060065913A1 (en) * | 2004-09-28 | 2006-03-30 | Makoto Sakuma | Semiconductor device with double barrier film |
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TW387151B (en) * | 1998-02-07 | 2000-04-11 | United Microelectronics Corp | Field effect transistor structure of integrated circuit and the manufacturing method thereof |
JP4012341B2 (ja) | 1999-07-14 | 2007-11-21 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JP2002280463A (ja) * | 2001-03-16 | 2002-09-27 | Toshiba Corp | 半導体装置及びその製造方法 |
US6372640B1 (en) * | 2001-07-31 | 2002-04-16 | Macronix International Co., Ltd. | Method of locally forming metal silicide layers |
JP4309078B2 (ja) * | 2001-08-10 | 2009-08-05 | 株式会社東芝 | 半導体装置及びその製造方法 |
US20030030123A1 (en) * | 2001-08-10 | 2003-02-13 | Masayuki Ichige | Semiconductor memory device equipped with memory transistor and peripheral transistor and method of manufacturing the same |
EP1506580B1 (en) * | 2002-05-08 | 2010-07-21 | Nxp B.V. | Floating gate memory cells with increased coupling ratio |
JP2004039943A (ja) | 2002-07-05 | 2004-02-05 | Renesas Technology Corp | 半導体装置の製造方法 |
JPWO2004112139A1 (ja) | 2003-06-10 | 2006-09-28 | 富士通株式会社 | 半導体装置とその製造方法 |
JP2005026380A (ja) | 2003-06-30 | 2005-01-27 | Toshiba Corp | 不揮発性メモリを含む半導体装置及びその製造方法 |
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JP2007027666A (ja) * | 2005-07-21 | 2007-02-01 | Toshiba Corp | 不揮発性半導体記憶装置 |
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JP4364225B2 (ja) * | 2006-09-15 | 2009-11-11 | 株式会社東芝 | 半導体装置およびその製造方法 |
-
2006
- 2006-09-15 JP JP2006251599A patent/JP4364225B2/ja active Active
-
2007
- 2007-09-13 TW TW096134252A patent/TWI441284B/zh active
- 2007-09-13 TW TW100129607A patent/TWI495047B/zh active
- 2007-09-13 EP EP07017977.5A patent/EP1901346B1/en active Active
- 2007-09-13 US US11/854,814 patent/US8143662B2/en active Active
- 2007-09-13 TW TW100129605A patent/TWI467704B/zh active
- 2007-09-14 CN CN2010101185276A patent/CN101794790B/zh active Active
- 2007-09-14 CN CN201210020445.7A patent/CN102522406B/zh active Active
- 2007-09-14 KR KR1020070093561A patent/KR100895757B1/ko active IP Right Grant
- 2007-09-14 CN CN2007101821814A patent/CN101145560B/zh active Active
- 2007-09-14 CN CN201210020444.2A patent/CN102569305B/zh active Active
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2011
- 2011-07-22 US US13/188,803 patent/US20110272755A1/en not_active Abandoned
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5726479A (en) * | 1995-01-12 | 1998-03-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having polysilicon electrode minimization resulting in a small resistance value |
US6074915A (en) * | 1998-08-17 | 2000-06-13 | Taiwan Semiconductor Manufacturing Company | Method of making embedded flash memory with salicide and sac structure |
JP2000150681A (ja) * | 1998-11-16 | 2000-05-30 | Toshiba Corp | 半導体装置 |
US6383882B1 (en) * | 2000-08-21 | 2002-05-07 | Samsung Electronics Co., Ltd. | Method for fabricating MOS transistor using selective silicide process |
US20050236661A1 (en) * | 2000-09-26 | 2005-10-27 | Michiharu Matsui | Nonvolatile semiconductor memory device having element isolating region of trench type |
JP2003234421A (ja) * | 2002-02-06 | 2003-08-22 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置およびその製造方法 |
US20040043594A1 (en) * | 2002-09-02 | 2004-03-04 | Thorsten Kammler | Semiconductor device having a polysilicon line structure with increased metal silicide portions and method for forming the polysilicon line structure of a semiconductor device |
US20060001073A1 (en) * | 2003-05-21 | 2006-01-05 | Jian Chen | Use of voids between elements in semiconductor structures for isolation |
CN1591837A (zh) * | 2003-09-01 | 2005-03-09 | 海力士半导体有限公司 | 用于制造闪存器件的方法 |
US20050218460A1 (en) * | 2004-03-19 | 2005-10-06 | Takehiro Hasegawa | Semiconductor integrated circuit device with a stacked gate including a floating gate and a control gate |
US20060065913A1 (en) * | 2004-09-28 | 2006-03-30 | Makoto Sakuma | Semiconductor device with double barrier film |
Also Published As
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JP4364225B2 (ja) | 2009-11-11 |
TW201203467A (en) | 2012-01-16 |
EP1901346B1 (en) | 2015-11-18 |
CN102569305B (zh) | 2015-03-25 |
US20080067575A1 (en) | 2008-03-20 |
TWI441284B (zh) | 2014-06-11 |
CN102522406B (zh) | 2015-05-06 |
CN101794790B (zh) | 2012-03-28 |
TW201203468A (en) | 2012-01-16 |
TW200832620A (en) | 2008-08-01 |
TWI495047B (zh) | 2015-08-01 |
US20110272755A1 (en) | 2011-11-10 |
CN101794790A (zh) | 2010-08-04 |
CN102522406A (zh) | 2012-06-27 |
KR20080025339A (ko) | 2008-03-20 |
CN101145560A (zh) | 2008-03-19 |
US8143662B2 (en) | 2012-03-27 |
KR100895757B1 (ko) | 2009-04-30 |
JP2008072061A (ja) | 2008-03-27 |
CN101145560B (zh) | 2012-11-21 |
EP1901346A3 (en) | 2008-07-23 |
TWI467704B (zh) | 2015-01-01 |
EP1901346A2 (en) | 2008-03-19 |
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