CN102473745A - 太阳能电池用透明导电性基板及太阳能电池 - Google Patents

太阳能电池用透明导电性基板及太阳能电池 Download PDF

Info

Publication number
CN102473745A
CN102473745A CN2010800336671A CN201080033667A CN102473745A CN 102473745 A CN102473745 A CN 102473745A CN 2010800336671 A CN2010800336671 A CN 2010800336671A CN 201080033667 A CN201080033667 A CN 201080033667A CN 102473745 A CN102473745 A CN 102473745A
Authority
CN
China
Prior art keywords
oxide layer
solar cell
transparent conductive
conductive substrate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800336671A
Other languages
English (en)
Chinese (zh)
Inventor
松井雄志
南谦一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of CN102473745A publication Critical patent/CN102473745A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
CN2010800336671A 2009-07-30 2010-07-29 太阳能电池用透明导电性基板及太阳能电池 Pending CN102473745A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2009-177702 2009-07-30
JP2009177702 2009-07-30
JP2010154101 2010-07-06
JP2010-154101 2010-07-06
PCT/JP2010/062850 WO2011013775A1 (ja) 2009-07-30 2010-07-29 太陽電池用透明導電性基板および太陽電池

Publications (1)

Publication Number Publication Date
CN102473745A true CN102473745A (zh) 2012-05-23

Family

ID=43529427

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800336671A Pending CN102473745A (zh) 2009-07-30 2010-07-29 太阳能电池用透明导电性基板及太阳能电池

Country Status (8)

Country Link
US (1) US20120125432A1 (enExample)
EP (1) EP2461373A1 (enExample)
JP (1) JPWO2011013775A1 (enExample)
KR (1) KR20120037952A (enExample)
CN (1) CN102473745A (enExample)
IN (1) IN2012DN01227A (enExample)
TW (1) TW201117391A (enExample)
WO (1) WO2011013775A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012182161A (ja) * 2011-02-28 2012-09-20 Ulvac Japan Ltd 薄膜太陽電池、及び薄膜太陽電池の製造方法
JPWO2012169602A1 (ja) * 2011-06-08 2015-02-23 旭硝子株式会社 透明導電膜付き基板
US10964811B2 (en) * 2019-08-09 2021-03-30 Micron Technology, Inc. Transistor and methods of forming transistors
CN120500079A (zh) 2019-08-09 2025-08-15 美光科技公司 晶体管及形成晶体管的方法
US11024736B2 (en) 2019-08-09 2021-06-01 Micron Technology, Inc. Transistor and methods of forming integrated circuitry
WO2021131113A1 (ja) * 2019-12-24 2021-07-01 パナソニックＩｐマネジメント株式会社 太陽電池
US11637175B2 (en) 2020-12-09 2023-04-25 Micron Technology, Inc. Vertical transistors
CN115117022A (zh) * 2022-03-03 2022-09-27 晶科能源(海宁)有限公司 光伏电池及其形成方法、光伏组件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027229A1 (ja) * 2003-08-29 2005-03-24 Asahi Glass Company, Limited 透明導電膜付き基体およびその製造方法
CN101310391A (zh) * 2005-11-17 2008-11-19 旭硝子株式会社 太阳能电池用透明导电性基板及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4460108B2 (ja) 1999-05-18 2010-05-12 日本板硝子株式会社 光電変換装置用基板の製造方法
JP2002260448A (ja) 2000-11-21 2002-09-13 Nippon Sheet Glass Co Ltd 導電膜、その製造方法、それを備えた基板および光電変換装置
EP1624494A4 (en) 2003-05-13 2007-10-10 Asahi Glass Co Ltd TRANSPARENT CONDUCTIVE SUBSTRATE FOR A SOLAR BATTERY AND METHOD FOR THE PRODUCTION THEREOF
JP2009177702A (ja) 2008-01-28 2009-08-06 Nec Corp 情報通信システム、端末、アクセス装置、加入者情報収容装置、サービスプロファイル送信方法及びプログラム
JP2010154101A (ja) 2008-12-24 2010-07-08 Olympus Imaging Corp 撮像装置および撮像装置用プログラム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027229A1 (ja) * 2003-08-29 2005-03-24 Asahi Glass Company, Limited 透明導電膜付き基体およびその製造方法
CN101310391A (zh) * 2005-11-17 2008-11-19 旭硝子株式会社 太阳能电池用透明导电性基板及其制造方法

Also Published As

Publication number Publication date
EP2461373A1 (en) 2012-06-06
TW201117391A (en) 2011-05-16
KR20120037952A (ko) 2012-04-20
IN2012DN01227A (enExample) 2015-04-10
WO2011013775A1 (ja) 2011-02-03
JPWO2011013775A1 (ja) 2013-01-10
US20120125432A1 (en) 2012-05-24

Similar Documents

Publication Publication Date Title
CN102473745A (zh) 太阳能电池用透明导电性基板及太阳能电池
CN100595933C (zh) 太阳能电池用透明导电性基板的制造方法
CN104969362B (zh) 带表面电极的透明导电玻璃基板及其制造方法、以及薄膜太阳能电池及其制造方法
JPWO2008099524A1 (ja) 光電変換装置及びその製造方法
WO2001065612A1 (en) Photoelectric device
CN102473750A (zh) 晶体硅系太阳能电池及其制造方法
JPWO2009142187A1 (ja) 薄膜光電変換装置とその製造方法
TW201012773A (en) Transparent conductive film substrate and solar cell using the substrate
CN102473742A (zh) 太阳能电池用透明导电性基板及太阳能电池
JP4713819B2 (ja) 薄膜光電変換装置用基板及びそれを用いた薄膜光電変換装置
US20130098435A1 (en) Hybrid contact for and methods of formation of photovoltaic devices
JP5291633B2 (ja) シリコン系薄膜光電変換装置およびその製造方法
JP2005347490A (ja) 透明導電性酸化物膜付き基体およびその製造方法ならびに光電変換素子
JP5243697B2 (ja) 光電変換装置用透明導電膜とその製造方法
JP2016127179A (ja) 薄膜太陽電池およびその製造方法
TW201340134A (zh) 附透明導電性氧化物膜之基體
JPWO2006046397A1 (ja) 薄膜光電変換装置用基板およびそれを用いた集積型薄膜光電変換装置
JP5469298B2 (ja) 光電変換装置用透明導電膜、及びその製造方法
JP2003229584A (ja) 光電変換装置用ガラス基板およびそれを用いた光電変換装置
KR101784439B1 (ko) 박막 태양전지
JP2014241311A (ja) 薄膜太陽電池モジュール
TW201308359A (zh) 附透明導電性氧化物膜之基體
JP5613296B2 (ja) 光電変換装置用透明導電膜、光電変換装置、およびそれらの製造方法
JP5489664B2 (ja) 薄膜太陽電池およびその製造方法
JP2014063819A (ja) 光電変換装置および光電変換装置の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120523