CN102473710B - 叉指状竖直平行电容器 - Google Patents
叉指状竖直平行电容器 Download PDFInfo
- Publication number
- CN102473710B CN102473710B CN201080036668.1A CN201080036668A CN102473710B CN 102473710 B CN102473710 B CN 102473710B CN 201080036668 A CN201080036668 A CN 201080036668A CN 102473710 B CN102473710 B CN 102473710B
- Authority
- CN
- China
- Prior art keywords
- metal wire
- interdigitated
- type
- metal
- interdigitated configuration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 476
- 229910052751 metal Inorganic materials 0.000 claims abstract description 476
- 239000000758 substrate Substances 0.000 claims description 22
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 17
- 239000010931 gold Substances 0.000 claims description 17
- 229910052737 gold Inorganic materials 0.000 claims description 17
- 230000005611 electricity Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 230000010354 integration Effects 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 8
- 238000010276 construction Methods 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 description 11
- 239000003989 dielectric material Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- AUEPDNOBDJYBBK-UHFFFAOYSA-N [Si].[C-]#[O+] Chemical compound [Si].[C-]#[O+] AUEPDNOBDJYBBK-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- -1 poly (arylene ether Chemical compound 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/548,484 US8378450B2 (en) | 2009-08-27 | 2009-08-27 | Interdigitated vertical parallel capacitor |
US12/548,484 | 2009-08-27 | ||
PCT/US2010/046742 WO2011031512A2 (en) | 2009-08-27 | 2010-08-26 | Interdigitated vertical parallel capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102473710A CN102473710A (zh) | 2012-05-23 |
CN102473710B true CN102473710B (zh) | 2016-05-25 |
Family
ID=43623599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080036668.1A Expired - Fee Related CN102473710B (zh) | 2009-08-27 | 2010-08-26 | 叉指状竖直平行电容器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8378450B2 (zh) |
JP (1) | JP5657002B2 (zh) |
CN (1) | CN102473710B (zh) |
DE (1) | DE112010003418B4 (zh) |
GB (1) | GB2485693B (zh) |
TW (1) | TW201140785A (zh) |
WO (1) | WO2011031512A2 (zh) |
Families Citing this family (29)
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US8432662B2 (en) * | 2009-01-30 | 2013-04-30 | Headway Technologies, Inc. | Ceramic capacitor and method of manufacturing same |
US8462482B2 (en) * | 2009-01-30 | 2013-06-11 | Headway Technologies, Inc. | Ceramic capacitor and method of manufacturing same |
JP5621357B2 (ja) * | 2010-06-30 | 2014-11-12 | 富士通セミコンダクター株式会社 | 半導体装置 |
JP5569354B2 (ja) * | 2010-11-17 | 2014-08-13 | 富士通セミコンダクター株式会社 | キャパシタおよび半導体装置 |
US8493708B2 (en) * | 2011-02-21 | 2013-07-23 | International Business Machines Corporation | Capacitor structure |
DE102011053536B4 (de) * | 2011-09-12 | 2019-06-19 | X-Fab Semiconductor Foundries Ag | Halbleiterbauelement mit einem Metallisierungssystem |
JP2015514315A (ja) * | 2012-03-22 | 2015-05-18 | カリフォルニア インスティチュート オブ テクノロジー | 細長体を有する導電性素子のアレイを具えるマイクロ・ナノスケールキャパシタ |
US9250148B2 (en) | 2012-03-22 | 2016-02-02 | California Institute Of Technology | Multi-directional environmental sensors |
US9269492B2 (en) * | 2012-10-02 | 2016-02-23 | Qualcomm Incorporated | Bone frame, low resistance via coupled metal oxide-metal (MOM) orthogonal finger capacitor |
US8901710B2 (en) * | 2013-02-27 | 2014-12-02 | International Business Machines Corporation | Interdigitated capacitors with a zero quadratic voltage coefficient of capacitance or zero linear temperature coefficient of capacitance |
US9059305B2 (en) * | 2013-03-04 | 2015-06-16 | International Business Machines Corporation | Planar qubits having increased coherence times |
JP6133688B2 (ja) * | 2013-05-27 | 2017-05-24 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
EP3008739A4 (en) | 2013-06-10 | 2017-01-11 | California Institute of Technology | Systems and methods for implementing high-temperature tolerant supercapacitors |
US20140367827A1 (en) * | 2013-06-17 | 2014-12-18 | Qualcomm Incorporated | Metal capacitor with inner first terminal and outer second terminal |
CN103337491B (zh) * | 2013-06-26 | 2016-01-27 | 中国科学院计算技术研究所 | 一种用于全向连接的金属电容及布图方法 |
US9202785B2 (en) * | 2013-11-08 | 2015-12-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three dimensional integrated circuit capacitor having vias |
CN104319098B (zh) * | 2014-09-17 | 2017-04-05 | 中国科学院物理研究所 | 叉指电容的制备方法及形成相邻的蒸镀图案的方法 |
US9520358B2 (en) | 2014-10-30 | 2016-12-13 | Qualcomm Incorporated | Via structure for optimizing signal porosity |
US20160343796A1 (en) * | 2015-05-22 | 2016-11-24 | Mediatek Inc. | Capacitor structure and method for forming the same |
US9520461B1 (en) * | 2015-08-28 | 2016-12-13 | Texas Instruments Incorporated | Integrated circuit with lateral flux capacitor |
JP6360229B2 (ja) * | 2017-04-20 | 2018-07-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10269490B2 (en) | 2017-05-01 | 2019-04-23 | Qualcomm Incorporated | Metal-oxide-metal capacitor using vias within sets of interdigitated fingers |
US11489038B2 (en) * | 2017-08-29 | 2022-11-01 | Micron Technology, Inc. | Capacitors having vertical contacts extending through conductive tiers |
US10163758B1 (en) * | 2017-10-30 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method for the same |
EP3514828B1 (en) * | 2018-01-19 | 2021-08-25 | Socionext Inc. | Semiconductor integrated circuitry |
WO2020056705A1 (zh) * | 2018-09-21 | 2020-03-26 | 华为技术有限公司 | 一种集成电路 |
US10692967B1 (en) | 2018-12-04 | 2020-06-23 | Analog Devices, Inc. | High density self-routing metal-oxide-metal capacitor |
CN110164878B (zh) * | 2019-06-10 | 2022-05-03 | 惠科股份有限公司 | 阵列基板及其制备方法 |
TWI831224B (zh) * | 2022-05-26 | 2024-02-01 | 瑞昱半導體股份有限公司 | 金屬氧化物金屬電容結構 |
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JP2008226998A (ja) * | 2007-03-09 | 2008-09-25 | Matsushita Electric Ind Co Ltd | 半導体集積回路 |
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-
2009
- 2009-08-27 US US12/548,484 patent/US8378450B2/en not_active Expired - Fee Related
-
2010
- 2010-08-26 JP JP2012526966A patent/JP5657002B2/ja not_active Expired - Fee Related
- 2010-08-26 TW TW099128669A patent/TW201140785A/zh unknown
- 2010-08-26 GB GB1201195.3A patent/GB2485693B/en not_active Expired - Fee Related
- 2010-08-26 WO PCT/US2010/046742 patent/WO2011031512A2/en active Application Filing
- 2010-08-26 DE DE112010003418.4T patent/DE112010003418B4/de not_active Expired - Fee Related
- 2010-08-26 CN CN201080036668.1A patent/CN102473710B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2485693B (en) | 2014-05-28 |
US8378450B2 (en) | 2013-02-19 |
JP2013503487A (ja) | 2013-01-31 |
GB2485693A (en) | 2012-05-23 |
GB201201195D0 (en) | 2012-03-07 |
DE112010003418B4 (de) | 2018-09-20 |
WO2011031512A2 (en) | 2011-03-17 |
TW201140785A (en) | 2011-11-16 |
JP5657002B2 (ja) | 2015-01-21 |
US20110049674A1 (en) | 2011-03-03 |
DE112010003418T5 (de) | 2012-08-23 |
WO2011031512A3 (en) | 2011-06-23 |
CN102473710A (zh) | 2012-05-23 |
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Effective date of registration: 20171108 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171108 Address after: American New York Patentee after: Core USA second LLC Address before: New York grams of Armand Patentee before: International Business Machines Corp. |
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