CN102439723B - 三维层叠的非易失性存储部件 - Google Patents

三维层叠的非易失性存储部件 Download PDF

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Publication number
CN102439723B
CN102439723B CN201080023587.8A CN201080023587A CN102439723B CN 102439723 B CN102439723 B CN 102439723B CN 201080023587 A CN201080023587 A CN 201080023587A CN 102439723 B CN102439723 B CN 102439723B
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CN
China
Prior art keywords
transistor
memory
rsm
unit
region
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Expired - Fee Related
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CN201080023587.8A
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English (en)
Chinese (zh)
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CN102439723A (zh
Inventor
X·王
Y·陆
H·李
H·刘
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Seagate Technology LLC
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Seagate Technology LLC
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Publication of CN102439723A publication Critical patent/CN102439723A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/74—Array wherein each memory cell has more than one access device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN201080023587.8A 2009-04-16 2010-04-09 三维层叠的非易失性存储部件 Expired - Fee Related CN102439723B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/425,084 2009-04-16
US12/425,084 US8054673B2 (en) 2009-04-16 2009-04-16 Three dimensionally stacked non volatile memory units
PCT/US2010/030466 WO2010120634A1 (en) 2009-04-16 2010-04-09 Three dimensionally stacked non-volatile memory units

Publications (2)

Publication Number Publication Date
CN102439723A CN102439723A (zh) 2012-05-02
CN102439723B true CN102439723B (zh) 2014-10-01

Family

ID=42337128

Family Applications (1)

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CN201080023587.8A Expired - Fee Related CN102439723B (zh) 2009-04-16 2010-04-09 三维层叠的非易失性存储部件

Country Status (5)

Country Link
US (2) US8054673B2 (enExample)
JP (1) JP5619871B2 (enExample)
KR (1) KR101437533B1 (enExample)
CN (1) CN102439723B (enExample)
WO (1) WO2010120634A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2934711B1 (fr) * 2008-07-29 2011-03-11 Commissariat Energie Atomique Dispositif memoire et memoire cbram a fiablilite amelioree.
US8054673B2 (en) * 2009-04-16 2011-11-08 Seagate Technology Llc Three dimensionally stacked non volatile memory units
US8294488B1 (en) * 2009-04-24 2012-10-23 Adesto Technologies Corporation Programmable impedance element circuits and methods
WO2013147743A1 (en) * 2012-03-26 2013-10-03 Intel Corporation Three dimensional memory control circuitry
US20130258750A1 (en) * 2012-03-30 2013-10-03 International Business Machines Corporation Dual-cell mtj structure with individual access and logical combination ability
US9281044B2 (en) 2013-05-17 2016-03-08 Micron Technology, Inc. Apparatuses having a ferroelectric field-effect transistor memory array and related method
US10043852B2 (en) * 2015-08-11 2018-08-07 Toshiba Memory Corporation Magnetoresistive memory device and manufacturing method of the same
JP2019160368A (ja) * 2018-03-13 2019-09-19 東芝メモリ株式会社 半導体記憶装置
US11784251B2 (en) * 2019-06-28 2023-10-10 Intel Corporation Transistors with ferroelectric spacer and methods of fabrication
CN112465128B (zh) * 2020-11-30 2024-05-24 光华临港工程应用技术研发(上海)有限公司 神经元网络单元
US11489111B2 (en) * 2021-03-29 2022-11-01 International Business Machines Corporation Reversible resistive memory logic gate device
US20250006282A1 (en) * 2023-06-28 2025-01-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method for manufacturing the same

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0179799B1 (ko) * 1995-12-29 1999-03-20 문정환 반도체 소자 구조 및 그 제조방법
TW587252B (en) * 2000-01-18 2004-05-11 Hitachi Ltd Semiconductor memory device and data processing device
JP2002217381A (ja) * 2000-11-20 2002-08-02 Toshiba Corp 半導体記憶装置及びその製造方法
JP3844117B2 (ja) * 2001-06-27 2006-11-08 インターナショナル・ビジネス・マシーンズ・コーポレーション メモリセル、記憶回路ブロック、データの書き込み方法及びデータの読み出し方法
JP4336758B2 (ja) * 2001-11-12 2009-09-30 日本電気株式会社 メモリ装置
JP2003258207A (ja) * 2002-03-06 2003-09-12 Sony Corp 磁気ランダムアクセスメモリおよびその動作方法およびその製造方法
KR100437458B1 (ko) * 2002-05-07 2004-06-23 삼성전자주식회사 상변화 기억 셀들 및 그 제조방법들
US6828689B2 (en) * 2002-07-08 2004-12-07 Vi Ci Civ Semiconductor latches and SRAM devices
JP4355136B2 (ja) * 2002-12-05 2009-10-28 シャープ株式会社 不揮発性半導体記憶装置及びその読み出し方法
JP2005166896A (ja) * 2003-12-02 2005-06-23 Toshiba Corp 磁気メモリ
US7402855B2 (en) * 2004-05-06 2008-07-22 Sidense Corp. Split-channel antifuse array architecture
US7315466B2 (en) * 2004-08-04 2008-01-01 Samsung Electronics Co., Ltd. Semiconductor memory device and method for arranging and manufacturing the same
KR100593450B1 (ko) * 2004-10-08 2006-06-28 삼성전자주식회사 수직하게 차례로 위치된 복수 개의 활성 영역들을 갖는피이. 램들 및 그 형성방법들.
KR100640641B1 (ko) * 2004-10-26 2006-10-31 삼성전자주식회사 적층된 메모리 셀을 구비하는 반도체 메모리 장치 및적층된 메모리 셀의 형성 방법
US8179711B2 (en) * 2004-10-26 2012-05-15 Samsung Electronics Co., Ltd. Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell
US7453716B2 (en) * 2004-10-26 2008-11-18 Samsung Electronics Co., Ltd Semiconductor memory device with stacked control transistors
KR100827653B1 (ko) * 2004-12-06 2008-05-07 삼성전자주식회사 상변화 기억 셀들 및 그 제조방법들
JP4466853B2 (ja) * 2005-03-15 2010-05-26 セイコーエプソン株式会社 有機強誘電体メモリ及びその製造方法
US20090039407A1 (en) * 2005-03-17 2009-02-12 Vora Madhukar B Vertically integrated flash EPROM for greater density and lower cost
US7978561B2 (en) * 2005-07-28 2011-07-12 Samsung Electronics Co., Ltd. Semiconductor memory devices having vertically-stacked transistors therein
KR100690914B1 (ko) * 2005-08-10 2007-03-09 삼성전자주식회사 상변화 메모리 장치
US7345899B2 (en) * 2006-04-07 2008-03-18 Infineon Technologies Ag Memory having storage locations within a common volume of phase change material
JP5227536B2 (ja) * 2006-04-28 2013-07-03 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
US7606055B2 (en) * 2006-05-18 2009-10-20 Micron Technology, Inc. Memory architecture and cell design employing two access transistors
JP4157571B2 (ja) * 2006-05-24 2008-10-01 株式会社東芝 スピン注入磁気ランダムアクセスメモリ
KR100748557B1 (ko) * 2006-05-26 2007-08-10 삼성전자주식회사 상변화 메모리 장치
JP4987616B2 (ja) * 2006-08-31 2012-07-25 株式会社東芝 磁気ランダムアクセスメモリ及び抵抗ランダムアクセスメモリ
JP5091495B2 (ja) * 2007-01-31 2012-12-05 株式会社東芝 磁気ランダムアクセスメモリ
US7898009B2 (en) * 2007-02-22 2011-03-01 American Semiconductor, Inc. Independently-double-gated transistor memory (IDGM)
US20090185410A1 (en) * 2008-01-22 2009-07-23 Grandis, Inc. Method and system for providing spin transfer tunneling magnetic memories utilizing unidirectional polarity selection devices
US8054673B2 (en) * 2009-04-16 2011-11-08 Seagate Technology Llc Three dimensionally stacked non volatile memory units

Also Published As

Publication number Publication date
JP5619871B2 (ja) 2014-11-05
US20120039113A1 (en) 2012-02-16
US8054673B2 (en) 2011-11-08
KR101437533B1 (ko) 2014-11-03
CN102439723A (zh) 2012-05-02
US20100265749A1 (en) 2010-10-21
WO2010120634A1 (en) 2010-10-21
KR20120014150A (ko) 2012-02-16
US8482957B2 (en) 2013-07-09
JP2012524407A (ja) 2012-10-11

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Granted publication date: 20141001

Termination date: 20170409