CN102386149A - 用于接触电子元件的接触件和方法 - Google Patents

用于接触电子元件的接触件和方法 Download PDF

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Publication number
CN102386149A
CN102386149A CN2011102645430A CN201110264543A CN102386149A CN 102386149 A CN102386149 A CN 102386149A CN 2011102645430 A CN2011102645430 A CN 2011102645430A CN 201110264543 A CN201110264543 A CN 201110264543A CN 102386149 A CN102386149 A CN 102386149A
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peroxide
sintering
acid
lotion
structure member
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CN102386149B (zh
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M·舍费尔
W·施米特
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Heraeus Deutschland GmbH and Co KG
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Heraeus Materials Technology GmbH and Co KG
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    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/102—Metallic powder coated with organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/105—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing inorganic lubricating or binding agents, e.g. metal salts
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    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/16—Metallic particles coated with a non-metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
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Abstract

本发明涉及一种用于连接至少两个元件的方法，其中采用一种烧结预成型制品。该烧结预成型制品包括具有表面的载体，该表面具有至少一个结构部件，结构部件含有强化的膏体，其中，强化的膏体含有：(a)金属颗粒，金属颗粒具有涂层，涂层含有至少一种有机化合物；以及(b)至少一种烧结助剂，烧结助剂选自组：(b1)有机过氧化物、(b2)无机过氧化物、(b3)无机酸、(b4)具有1-4个碳原子的有机酸的盐、(b5)具有1-4个碳原子的有机酸的酯以及(b6)羰基络合物；并且载体的具有强化膏体的表面与该膏体的成分不发生反应。

Description

用于接触电子元件的接触件和方法
技术领域
本发明涉及烧结预成型制品和使用该烧结预成型制品连接至少两个元件的方法。
背景技术
在电力电子学领域中，对于至少两个元件的连接具有特殊要求，例如使基板与电子元件相连接，电子元件诸如为LED或非常薄的硅芯片，这些电子元件具有较高的压力和温度敏感度。
由于上述原因，基板与这样的压力和温度敏感的元件通常使用粘接方法进行连接。适宜的导电胶中通常含有银颗粒、热固性聚合物和反应性稀释剂。然而这种粘接技术具有以下缺点，即，由此形成基板和元件之间的接触位置仅具有不充分的导热性以及导电性。
为了解决上述问题，建议使元件与基板通过烧结处理而连接在一起。
在这种烧结方法中，通常采用膏体，该膏体由待烧结的金属粉末和溶剂构成。
对此，文献DE 34 14 065C2公开了：(i)在电子元件或基板的连接表面上涂覆上上述膏体；(ii)将元件组装在基板上，其中，膏体设置于元件和基板之间；(iii)将溶剂从如此制成的复合结构中除去；(iv)对该复合结构进行烧结处理。
采用上述烧结方法实现了电子元件与基板的可靠连接。然而其缺点在于，先制成由电子元件和基板构成的复合结构，之后才将溶剂除去。因为在该复合结构中，含有溶剂的膏体已经与电子元件和基板的待连接表面形成接触，所以不能实现简单而快速的排气，从而使复合结构必须经过长时间的干燥处理。
为了解决上述问题，根据EP 0 242 626B1公开的方案：将膏体涂覆在电子元件或基板的待连接表面上，然后直接进行干燥处理。在干燥之后，再将元件安装在基板上，其中，干燥后的膏体设置于电子元件和基板之间。接下来，再对由此制成的复合结构进行烧结处理。
DE 10 2004 019 567B3公开了上述方法的一种扩展方案。这里建议将膏体作为涂层涂覆在载体薄膜上，并且进行干燥处理。然后，在由干燥后的膏体构成的涂层上安装一个或多个元件。接下来，对由元件、干燥后的膏体涂层和载体薄膜构成的复合结构进行压力冲击，从而提高干燥后的膏体和元件之间的粘合力，由此使干燥后的膏体粘合在元件上，并由此能够从载体薄膜上取下。之后，可以使元件通过干燥后的膏体在基板上定位，对由基板、元件和置于二者之间的经干燥的膏体涂层构成的复合结构进行烧结处理。
从经济的角度看，上述方法是具有优势的，因为该方法实现了多个元件的合理的、至少部分同时进行的操作，以及还实现了烧结涂层的结构化设计。
然而其缺点在于，这种烧结方法与其它惯用的烧结方法一样，或者需要较高的过程压力(例如大于30MPa)，或者需要较高的过程温度(高于250℃)。这些条件通常导致待连接元件的损坏，进而惯用的烧结方法在许多应用情况中都被排除。
DE 10 2007 046 901A1公开了一种烧结技术，通过该烧结技术实现了：构成用于电力电子学领域的非常良好的导电、导热的连接层。在这种烧结方法中采用金属膏，除了酒精溶剂之外，该金属膏还含有银化合物，该银化合物在300℃的条件下分解出银元素。该金属膏使过程压力减小到小于3bar，而且过程温度降低到低于250℃。该烧结技术在基板与压力和温度敏感的元件的连接过程中实现了较大的质量飞跃。
当然，对于许多的应用情况一直期望能够使过程温度进一步降低。由此使待连接元件的负载更小，以及因此使用于电力电子领域的元件的质量进一步提高。此外，在进一步降低过程温度的同时，还显著地节省能源成本。
发明内容
因此，本发明的目的在于，提供一种用于连接至少两个元件的方法，该方法实现了对于多个元件过程经济而具有优势的、至少部分同时进行的操作，实现了烧结涂层的结构化设计，以及实现了将烧结温度降低至低于250℃。
上述目的通过用于连接至少两个元件的方法来实现，该方法中：
(i)制备烧结预成型制品，其包括具有表面的载体，该表面具有至少一个结构部件，该结构部件含有强化的膏体，其中，该强化的膏体含有：(a)金属颗粒，该金属颗粒具有涂层，该涂层含有至少一种有机化合物；以及(b)至少一种烧结助剂，该烧结助剂选自组：(b1)有机过氧化物、(b2)无机过氧化物、(b3)无机酸、(b4)具有1-4个碳原子的有机酸的盐、(b5)具有1-4个碳原子的有机酸的酯以及(b6)羰基络合物；并且前述载体的具有强化膏体的表面与该膏体的成分不发生反应。
(ii)至少使第一元件设有一待连接表面，使第二元件设有一待连接表面；
(iii)使烧结预成型制品的载体表面上的至少一个结构部件与第一元件的待连接表面相接触，以获得由第一元件和至少一个结构部件构成的组装结构，该组装结构与载体相接触；
(iv)使该由第一元件和至少一个结构部件构成的组装结构与载体分离；
(v)使第二元件的待连接表面与所述由第一元件和至少一个结构部件构成的组装结构的至少一个结构部件相接触，以获得由第一元件、第二元件以及于二者之间设置的结构部件构成的烧结组装结构；并且
(vi)对该烧结组装结构进行烧结处理。
在前述方法中采用一种烧结预成型制品，其包括具有表面的载体，该表面具有至少一个结构部件，该结构部件含有强化的膏体，其特征在于，该强化的膏体含有：
(a)金属颗粒，该金属颗粒具有涂层，该涂层含有至少一种有机化合物；以及
(b)至少一种烧结助剂，该烧结助剂选自组：(b1)有机过氧化物、(b2)无机过氧化物、(b3)无机酸、(b4)具有1-4个碳原子的有机酸的盐、(b5)具有1-4个碳原子的有机酸的酯以及(b6)羰基络合物；并且
前述载体的具有强化膏体的表面与该膏体的成分不发生反应。
在本发明的方法中，使至少两个元件彼此连接。
优选使多个元件相邻地、例如于一个平面中固定在另一元件上。
对于元件的定义并不受限制。广义上说，元件可以理解为能够彼此相互连接的物体。
根据一个优选的实施方案，一方面待连接的元件指的是电子元件，另一方面待连接的元件指的是基板。
根据一个特别优选的实施方案，根据本发明，通过采用本发明烧结预成型制品的方法，使多个电子元件相邻地、例如于一个平面中固定在一块基板上。
一般情况下，电子元件理解为可以是电子组装结构的一部分。根据一个优选的实施方案，电子元件理解为是不可进一步拆分的零件，该零件可以用作是电路的构件。电子元件例如可以为主动元件和被动元件。根据特别的实施方案，电子元件可以用于电力电子学领域中。根据一个优选的实施方案，电子元件选自组：二极管(例如LEDs(Light Emitting Diodes，发光二极管))、晶体管(例如IGBTs(Insulated-Gate Bipolar Transistors，绝缘栅双极晶体管))、集成电路、半导体芯片、裸芯片(Dies)、电阻器、感应器、电容器、线圈和散热器。
一般情况下，基板理解为可以与电子元件连接的实体。根据一个优选的实施方案，基板选自组：引线框架、DCB基板(直接铜键合基板)和陶瓷基板。
根据一个优选的实施方案，以下由电子元件和基板组成的组对可以彼此连接：LED/引线框架、LED/陶瓷基板、Die/引线框架、Die/陶瓷基板、IGBT/引线框架、IGBT/陶瓷基板、IGBT/DCB基板、集成电路/引线框架、集成电路/陶瓷基板、集成电路/DCB基板、感应器/引线框架、感应器/陶瓷基板、散热器(优选铜或铝散热器)/DCB、散热器(优选铜或铝散热器)/陶瓷基板、散热器/引线框架、电容器(优选钽电容，优选在非储能状态(inZustand)下)/引线框架。
待连接元件可以分别包括至少一个金属化层。金属化层例如可以具有纯金属或金属合金。如果金属化层具有纯金属，那么该纯金属选自组：铜、银、金、钯和铂。如果金属化层具有金属合金，那么该金属合金优选含有以下至少一种金属：银、金、镍、钯和铂。金属化层还可以具有多层结构。根据另一个优选实施方案，金属化层还含有玻璃。
根据本发明，至少两个元件的连接可以理解为第一元件在第二元件上的固定。在本文中，“在……上(auf)”仅指：第一元件的表面与第二元件的表面相连接，其中，并没有涉及到两个元件的相对位置、或含有至少两个元件的组装结构的相对位置。
对于本发明的方法，首先提供一种烧结预成型制品。
广义上说，烧结预成型制品可以理解为这样一种组装结构，通过其可以以简单的方式在两个元件的表面上施加一种膏体，这种膏体应用于本发明的烧结方法。
这种烧结预成型制品包括具有表面的载体，该表面具有至少一个结构部件，该结构部件含有强化的膏体。
载体的表面由这样的材料构成，该材料相对于膏体的成分以及膏体本身不发生反应，特别具有化学惰性。
在本发明的范围内，载体表面的材料是不发生反应的，也就是不具有可烧结性。若使载体表面的材料不具有可烧结性，那么这样构成，即，在载体表面的材料和膏体中所含的金属颗粒之间不发生扩散过程。相应地优选，在25℃和1013hPa的条件下，于载体表面材料和膏体成分之间不产生相互作用，由此不需要用于容纳膏体的载体以及用于烧结过程的膏体。此外，载体表面可以由这样的材料构成，该材料使强化的膏体便于从载体处脱落。
根据一个优选的实施方案，载体表面的材料设计成：在载体表面的材料和膏体中所含的金属颗粒之间不发生扩散过程，但是在载体表面的材料和强化的膏体之间产生相互粘附作用。
由于载体表面材料相对于膏体的成分以及膏体本身不发生反应，所以确保了，在进行本发明方法的过程中，由第一元件和至少一个结构部件构成的组装结构便于从载体上脱落。
根据一个优选的实施方案，载体选自组：非金属材料、金属陶瓷和在表面具有氧化层的金属材料。
作为非金属材料，特别可以采用聚合物、玻璃和非金属陶瓷。根据一个优选的实施方案，载体由聚酯、聚酰亚胺或聚醚砜制成。
金属陶瓷可以理解为含有至少一种金属的陶瓷。例如用于载体的金属陶瓷可以采用氧化铝陶瓷。
在表面具有氧化层的金属材料优选为能够在大气氧气中钝化的金属。对此特别采用铝、镍和铁。
根据本发明，该载体具有表面，该表面具有至少一个结构部件，该结构部件含有强化的膏体。
根据本发明，该至少一个结构部件位于载体的表面上。
根据一个优选的实施方案，该载体具有表面，该表面具有多个结构部件，这些结构部件含有强化的膏体。多个结构部件根据限定条件而具有一定的结构。这些结构部件可以具有相同或不同的几何形状。此外，各个结构部件还可以均匀或不均匀设置。优选，结构部件在载体上间隔地相邻设置，即设置在一个平面上。
结构部件的数量和几何形状以及结构部件在载体上的组装结构没有其它限制。然而优选，结构部件的数量和几何形状以及结构部件在载体上的组装结构可以这样选择：使由结构部件生成的式样对应于这样的式样，即，通过该式样，使例如在一个平面上各个相邻的元件可以固定在另一个元件上。
例如，可以使多个电子元件、例如半导体芯片与一块基板、例如引线框架相连接。通常情况下，这种引线框架具有接触位置，这些接触位置设置用于与半导体芯片形成连接。在这种情况下，烧结预成型制品可以这样设计，即，使含有强化膏体的结构部件在载体的表面上设置成一种式样，该式样对应于引线框架上的接触位置的式样。这种结构部件在载体上的组装结构确保实现了，使接下来与半导体芯片组装在一起的结构部件能够转载至引线框架的接触位置上，并且使半导体芯片位于引线框架上的对应于该半导体芯片的接触位置上。
位于载体表面上的结构部件含有强化的膏体。
膏体这样设计，即，在低于250℃的温度条件下膏体能够实现元件的稳定连接。
本发明所采用的膏体含有金属颗粒(a)。
在本发明的范围内，金属颗粒不仅限于纯金属颗粒。而是，金属颗粒还可以包括所有含金属成分的颗粒。这样金属成分优选相对于金属颗粒的重量占有至少50重量百分比，还更优选占有至少70重量百分比，特别优选至少90重量百分比，以及尤其特别优选至少95重量百分比。特别地，金属颗粒的概念还指的是由金属合金构成的颗粒，或金属间相的颗粒。此外，金属颗粒还包括这样的颗粒，即，该颗粒含有至少两层，该至少两层可以具有不同的金属、金属合金或金属间相。对此，这样的金属颗粒还可以指的是相同或不同的金属颗粒。特别是，在膏体中可以含有不同金属颗粒的混合物。
在本发明的范围内，金属的概念指的是这样一种元素，该元素在元素周期表中与硼处于相同周期、而且在硼的左边，与硅处于相同周期、而且在硅的左边，与锗处于相同周期、而且在锗的左边，以及与锑处于相同周期、而且在锑的左边；还指的是原子量大于55的所有元素。
根据一个特别优选的实施方案，膏体含有金属颗粒，该金属颗粒的纯度为至少95重量百分比，还优选至少98重量百分比，更优选至少99重量百分比，以及尤其优选至少99.9重量百分比。
根据另一个优选的实施方案，金属选自组：铜、银、镍和铝。根据一个特别优选的实施方案，金属为银或铜。根据一个更优选的实施方案，金属为银。
如果本发明采用的膏体含具有金属合金的金属颗粒，那么该金属合金优选含有以下至少一种金属：铝、镍、铜、银、金、钯和铂。根据一个特别优选的实施方案，金属合金包括以下至少两种金属：铝、镍、铜、银、金、钯和铂。而且还可以优选，选自铝、镍、铜、银、金、钯和铂的金属含量占金属合金的至少90重量百分比，还优选至少95重量百分比，特别优选至少99重量百分比，以及尤其特别优选100重量百分比。这种合金例如可以是这样的合金，该合金含有：铜和银；铜、银和金；铜和金；银和金；银和钯；铂和钯；或，镍和钯。
如果本发明的膏体含有包括至少两层的金属颗粒，该至少两层具有不同的金属、金属合金或金属间相，那么在此优选，由金属、金属合金或金属间相构成的颗粒含有至少一种以下金属：铝、镍、铜、银、金、钯和铂，其中，使颗粒被材料不同的涂层包围，涂层的材料由金属、金属合金或金属间相构成，涂层的材料含有至少一种以下金属：铝、镍、铜、银、金、钯和铂。还特别优选采用镀银的铜颗粒。
金属颗粒可以具有不同结构。例如，金属颗粒可以具有片状或球形(球状)结构。根据一个特别优选的实施方案，金属颗粒具有片状结构。然而并不排除，所采用的金属颗粒中以其次的比例还可以具有其它形状。但是优选，至少70重量百分比、还优选至少80重量百分比、更优选至少90重量百分比、或100重量百分比的颗粒具有片状结构。
如果金属颗粒具有球形结构，那么金属颗粒的平均粒径优选为0.1-20μm，更优选为1-15μm，以及尤其优选2-10μm。根据本发明，平均粒径可以理解为至少百分之90的颗粒具有在给定的范围内的粒径。例如，平均粒径为0.1-20μm表示至少百分之90的颗粒的粒径都在0.1-20μm的范围内，而少于百分之10的颗粒的粒径小于0.1μm或大于20μm。
根据本发明，金属颗粒具有涂层。
根据本发明，颗粒的涂层可以理解为在颗粒表面上的粘附层。根据本发明，粘附层指的是不会由于引力作用而脱离金属颗粒的涂层。
根据本发明，金属颗粒的涂层含有至少一种涂层化合物。该至少一种涂层化合物是有机化合物。
该至少一种涂层化合物优选指的是以下化合物中的一种：脂肪酸、脂肪酸盐和脂肪酸酯。该涂层化合物应该防止膏体中含有的金属颗粒的凝聚，并且使膏体稳定。
本发明采用的涂层化合物优选选自组：饱和化合物、单不饱和化合物、多不饱和化合物以及它们的混合物。
此外，还优选涂层化合物选自组：支链支链型化合物、直线型化合物以及它们的混合物。
涂层化合物优选具有8-28、还优选12-24以及特别优选12-18个碳原子。
根据一个优选的实施方案，涂层化合物指的是单脂肪酸，单脂肪酸盐，单脂肪酸酯以及它们的混合物。
作为脂肪酸盐优选这样的盐，该盐的阴离子成分是去质子的脂肪酸，该盐的阳离子成分选自组：铵离子、单烃基铵离子(Monoalkylammoniumionen)、二烃基铵离子(Dialkylammoniumionen)、三烃基铵离子(Trialkylammoniumionen)、锂离子、钠离子、钾离子、铜离子和铝离子。
优选脂肪酸酯从相应的脂肪酸中衍生出来，其中，酸单体的羟基被烷基、特别是甲基、乙基、丙基或丁基代替。
根据一个优选的实施方案，至少一种涂层化合物选自组：羊脂酸(辛酸)、羊蜡酸(癸酸)、月桂酸(十二烷酸)、肉豆蔻酸(十四烷酸)、棕榈酸(十六烷酸)、硬脂酸(十八烷酸)、它们的混合物、以及对应的酯和盐及其混合物。
根据一个特别优选的实施方案，至少一种涂层化合物选自组：月桂酸(十二烷酸)、硬脂酸(十八烷酸)、硬脂酸钠、硬脂酸钾、硬脂酸铝、硬脂酸铜，棕榈酸钠和棕榈酸钾。
本发明所采用的金属颗粒均为市售。本发明所采用的涂层化合物可以通过惯用的和现有技术的方法涂覆在金属颗粒的表面上。
例如实现了，该涂层化合物、特别是上述硬脂酸或棕榈酸酯在溶剂中悬浮，并且使悬浮的涂层化合物在球磨机中通过金属颗粒进行研磨。研磨之后，对用涂层化合物涂层的金属颗粒进行干燥，接着进行除尘。
优选至少一种涂层化合物的成分选自组：脂肪酸、脂肪酸盐和脂肪酸酯，该涂层化合物相对于涂层总重量占有至少80重量百分比，还优选至少90重量百分比，特别优选至少95重量百分比，尤其特别优选至少99重量百分比以及特别是100重量百分比。
根据一个优选的实施方案，涂层化合物的含量相对于被涂层的金属颗粒的重量占有0.05-3重量百分比，还优选0.07-2.5重量百分比以及特别优选0.1-2.2重量百分比。
“涂层度(Coatinggrad)”定义为涂层化合物质量与金属颗粒表面积的比值，该涂层度优选为每平方米(m2)金属颗粒表面的涂层化合物的质量是0.00005-0.03g，更优选是0.0001-0.02g以及还更优选是0.0005-0.02g。
根据本发明，膏体含有至少一种烧结助剂。该烧结助剂优选能够确保在低于250℃的条件下进行烧结的同时还实现涂层化合物的燃尽，从而在低于250℃的条件下实现烧结。特别适宜的烧结助剂确保在低于250℃的条件下或者直接、或者间接地通过中间形成的化合物而实现涂层化合物的燃尽。
根据本发明，烧结助剂选自组：(b1)有机过氧化物、(b2)无机过氧化物、(b3)无机酸、(b4)具有1-4个碳原子的有机酸的盐、(b5)具有1-4个碳原子的有机酸的酯以及(b6)羰基络合物。
根据一个实施方案，作为烧结助剂所采用的有机过氧化物(b1)、无机过氧化物(b2)和无机酸(b3)均为氧化剂。
氧化剂可以理解为这样的物质，即，其能够氧化其它的物质并且由此自身还原。氧化剂可以吸收电子，因此氧化剂还是电子受体。优选根据一个实施方案，烧结助剂还是氧传递体。因此指的是一种可以释放氧气的物质。该化合物可以用作烧结助剂，这是因为，该化合物含有至少一个氧原子，以及膏体的金属颗粒上的涂层化合物的燃烧可以在低于250℃的条件下进行。
(b1)有机过氧化物、(b2)无机过氧化物和(b3)无机酸可以用作烧结助剂的适用性源于这样的事实，即，如果对膏体中含有的颗粒优选用脂肪酸进行涂层，那么对于采用该膏体的元件的烧结是有利的。如果金属颗粒没有涂层，那么金属颗粒就会在金属膏体中凝聚，而且在烧结过程的早期阶段会产生金属颗粒的聚集。由此常导致待连接元件之间的不均匀的接触位置。
令人意想不到的是，涂层的金属颗粒竟然还可以将烧结温度降低到低于250℃。只要在金属颗粒表面上具有涂层化合物，那么一方面避免了金属颗粒的凝聚。另一方面还使金属颗粒的表面不用于烧结过程，从而使金属颗粒不会进行烧结。
在传统的烧结方法中，在烧结过程中通常用于烧结的温度远高于250℃的情况下，涂层化合物才会燃尽。在涂层化合物燃尽之后才得到用于烧结过程的金属颗粒的表面。因此，采用传统的涂层的金属颗粒在温度远高于250℃的情况下才能实现烧结过程。
令人意想不到的是，(b1)有机过氧化物、(b2)无机过氧化物和(b3)无机酸确保在温度低于250℃的条件下实现涂层化合物的燃尽。这些烧结助剂指的是含氧的氧化剂，该氧化剂确保在温度低于250℃的条件下除去残留在金属颗粒上的涂层化合物。因此，在在温度低于250℃的条件下得到用于烧结过程的金属颗粒的表面。同样令人意想不到的是，尽管使涂层化合物能够在低于250℃的条件下燃尽，这并不会导致金属颗粒的凝聚，而且形成了待连接元件之间的均匀稳定的连接位置。
此外还令人意想不到的是，位于涂层以下的金属颗粒表面通常一部分会氧化。这样的金属氧化层对于烧结所需的扩散过程产生影响，并因此而使扩散过程变缓。出于这种原因，在烧结过程中，表面氧化的金属颗粒在传统的方式下必须使用远高于250℃的过程温度条件。
根据本发明，在涂层化合物燃尽的过程中另外还生成一氧化碳。在烧结过程中释放的一氧化碳是一种还原剂，并且作为还原剂能够使金属颗粒表面上的金属氧化物还原。金属氧化物的除去确保实现无障碍的扩散，并由此实现扩散速度的提高。此外，在金属氧化物的还原过程中还就地产生活性金属，这样的活性金属进一步利于烧结过程。此外，在烧结过程中还原的金属能够填充金属颗粒的金属原子之间的空隙，并且使待连接元件之间的接触位置的孔隙度显著降低。由此实现非常稳定的、并具有导热性和导电性的接触位置。
在本发明的范围内，(b1)有机过氧化物可以理解为这样的化合物，该化合物含有过氧化阴离子O2 2-或过氧化基-O-O-、以及至少一种有机残基，该有机残基直接与过氧化基相连。在本发明的范围内，只要存在至少一种直接与过氧化基相连的有机残基，有机过氧化物由此还可以含有无机残基，该无机残基直接与过氧化基相连。这种连接优选为共价性质的连接。
有机残基优选可以理解为，其含有至少一个碳原子，其中，该碳原子直接与过氧化基相连，优选通过共价键与过氧化基相连。
根据一个优选的实施方案，本发明采用的有机过氧化物指的是氢过氧化物以及过氧羧酸和过氧羧酸盐。过氧羧酸从羧酸衍生而来，其中优选，羧酸单元的羟基被过氧化羟基代替。氢过氧化物反过来又形式上来自醚和醇，其中，使烷基、烯基或芳基彼此相连的氧桥，或与氢原子相连的氧桥，被过氧化基代替。
本发明所采用的有机过氧化物具有至少一个过氧化基。由此该有机过氧化物还可以具有两个或多个过氧化基。
在本发明采用的有机过氧化物中，有机残基可以是相同或不同的。
有机残基可以本身携带杂原子。在这种情况下，杂原子优选为氧原子、氮原子或卤素原子。如果有机残基含有卤素原子，那么优选为氟原子、氯原子、溴原子或碘原子。该杂原子可以是一个功能基团的一部分。作为功能基团优选采用羧基基团、酯基、酮基、醛基、羟基、氨基、酰胺基、偶氮基、亚胺基、腈基或氰基基团。
有机过氧化物的有机残基优选具有1-20、更优选2-15以及还更优选2-10个碳原子。
有机残基可以是支链支链型或直线型。
有机残基还可以指的是脂肪基团或芳香基团。
在采用脂肪基的情况下，有机残基还可以具有环状残基。环状残基的环优选由4-8个原子构成，其中，原子可以优选为碳原子。然而，环状残基的环还可以含有杂原子，优选含有一个或多个氮原子或氧原子。
在采用芳香基的情况下，有机残基可以具有芳香基团，该芳香基团优选具有5或6个碳原子。
有机残基可以是饱和或不饱和的。因此，在有机残基中可以含有多重化合键、优选含有双键、但也可以是三键。
有机过氧化物还可以含有至少一个无机残基，该无机残基直接与过氧化基团连接。
根据本发明，无机残基可以理解为，其与有机过氧化物的过氧化基团连接，其中，该连接不是通过碳原子来实现。
无机残基与有机过氧化物的过氧化基团的连接原理上可以通过除了碳原子以外的所有原子来实现。该连接优选通过氢原子或杂原子来实现。作为杂原子可以优选金属原子或氮原子。
如果杂原子直接与过氧化基团连接，那么杂原子可以是这样的残基的一部分，该残基除了含有杂原子还含有其它原子。其它原子可以优选指的是碳原子、氢原子或其它杂原子。作为其它杂原子可以优选氮原子、氧原子、磷原子和卤素原子，卤素原子诸如为氟原子、氯原子、溴原子或碘原子。
作为能够直接与过氧化基团连接的金属原子优选元素周期表中的第一、第二和第三组金属。因此根据一个优选的实施方案，使锂原子、钠原子、钾原子、铍原子、镁原子、钙原子、锶原子、硼原子或铝原子与过氧化基团连接。
通过杂原子与过氧化基团连接的无机残基可以优选是铵基。还可以优选，使铵基的一个或多个氢原子被有机或无机残基替换。优选铵基的一个或多个氢原子被烷基基团代替。该烷基基团可以是支链型或直线型，但是优选为直线型。代替铵基的一个或多个氢原子的烷基优选具有1-10、更优选1-6以及还更优选1-4个碳原子。代替铵基的一个或多个氢原子的烷基基团可以是相同或不同的。
优选无机残基是铵基、单甲基铵基、二甲基铵基、三甲基铵基、单乙基铵基、二乙基铵基、三乙基铵基、单丙基铵基、二丙基铵基、三丙基铵基、单异丙基铵基、二异丙基铵基、三异丙基铵基、单丁基铵基、二丁基铵基和三丁基铵基。
本发明采用的有机过氧化物可以是环状有机过氧化物。特别是有机过氧化物的过氧化基团本身可以是环状系统的一部分。
本发明采用的有机过氧化物优选具有低于200℃的分解温度。然而在本文中，令人意想不到的是，分解温度高于200℃的有机过氧化物由于金属膏中含有的金属而实现低于200℃的分解温度。这是由于，金属膏中含有的金属使有机过氧化物的分解得到催化。
同样可以优选，本发明采用的有机过氧化物在室温(20℃)和大气压(1013hPa)条件下是液体。
在特别优选的实施方案中，有机过氧化物指的是这样一种化合物，其选自组：二异丁酰基过氧化物、过氧新癸酸枯烯酯、过氧新癸酸1，1，3，3-四甲基丁酯、过氧二碳酸二正丙酯、过氧新癸酸叔戊酯、过氧二碳酸二(2-乙基己)酯、过氧新癸酸叔丁酯、过氧二碳酸二正丁酯、过氧新戊酸1，1，3，3-四甲基丁酯、过氧新庚酸叔丁酯、过氧新戊酸叔戊酯、过氧新戊酸叔丁酯、二(3，5，5-三甲基己酰基)过氧化物、过氧化-2-乙基己酸叔丁酯、过氧异丁酸叔丁酯、1，1-二(叔丁基过氧基)-3，3，5-三甲基环己烷、1，1-二(叔丁基过氧基)-环己烷、过氧化-3，5，5-三甲基己酸叔丁酯、2，2-二(叔丁基过氧基)-丁烷、过氧化异丙基碳酸叔丁酯、过氧乙酸叔丁酯、2，5-二甲基-2，5-二(2-乙基己酰基过氧基)-己烷、过氧化-2-乙基己酸1，1，3，3-四甲基丁酯、过氧化-2-乙基己酸叔戊酯、过氧化二乙基醋酸叔丁酯、过氧化-2-乙基己基碳酸叔戊酯、过氧化-2-乙基己基碳酸叔丁酯、过氧苯甲酸叔丁酯、二叔戊基过氧化物、2，5-二甲基-2，5-二(叔丁基过氧基)-己烷、叔丁基枯基过氧化物、2，5-二甲基-2，5-二(叔丁基过氧基)-3-己炔、二叔丁基过氧化物、3，6，9-三乙基-3，6，9-三甲基-1，4，7-三过氧壬烷(triperoxonan)、二异丙基苯单过氧化氢、萜烷过氧化氢、枯烯过氧化氢、二枯基过氧化物、以及1，1，3，3-四甲基丁基过氧化氢。
此外，作为烧结助剂还可以采用(b2)无机过氧化物。
在本发明的范围内，无机过氧化物可以理解为这样的化合物，该化合物含有过氧化阴离子O2 2-或过氧化基-O-O-、以及纯粹的无机残基。在本发明的范围内，无机过氧化物优选为所有不是有机过氧化物的过氧化物。根据本发明，无机残基指的是通过除了碳原子以外的原子直接与过氧化基团连接的基团。
通过无机过氧化物的过氧化基团连接的两个无机残基可以是相同或不同的。
通过过氧化基团的连接，优选可以采用一个或多个氢原子和/或一个或多个杂原子来实现。杂原子优选为金属原子、硼原子或氮原子。
如果杂原子直接与过氧化基团连接，那么杂原子可以是这样的残基的一部分，这样的残基除了杂原子以外还含有其它原子。根据一个优选的实施方案，其它原子指的是碳原子、氢原子或其它杂原子。作为其它杂原子可以优选氮原子、氧原子、磷原子和卤素原子，卤素原子特别为氟原子、氯原子、溴原子或碘原子。
优选能够直接与过氧化基团连接的金属原子是元素周期表中的第一、第二和第三组金属。因此可以优选使锂原子、钠原子、钾原子、铍原子、镁原子、钙原子、锶原子、硼原子或铝原子与过氧化基团连接。
优选地，通过杂原子与无机过氧化物的过氧化基团连接的至少一个无机残基是铵基。如果在无机过氧化物中通过一个过氧化基团连接两个铵基，那么这两个铵基可以是相同或不同的。
可以优选，铵基残基的一个或数个氢原子通过有机或无机基团取代。在这种情况下，优选铵基残基的一个或多个氢原子通过烷基代替。烷基基团可以支链的或直线的，但是优选是直线型的。取代了铵基残基的一个或多个氢原子的烷基基团具有优选1-10个，还优选1-6个，更优选1-4个碳原子。取代铵基残基的一个或多个氢原子的烷基基团可以是相同或不同的。
优选无机残基是铵基、单甲基铵基、二甲基铵基、三甲基铵基、单乙基铵基、二乙基铵基、三乙基铵基、单丙基铵基、二丙基铵基、三丙基铵基、单异丙基铵基、二异丙基铵基、三异丙基铵基、单丁基铵基、二丁基铵基和三丁基铵基。
无机过氧化物还可以是一种过硼酸盐(Peroxoborat)。根据本发明，过硼酸盐可以理解为至少一个氧原子被过氧化基团代替的硼酸盐。根据本发明，硼酸盐/酯是硼酸的盐或酯。过硼酸盐还可以优选作为水合物存在。此外，过硼酸盐还可以指的是具有环形阴离子的过氧化盐。
优选的过硼酸盐为过硼酸铵、过硼酸烷铵和过硼酸碱金属盐。
根据本发明，过硼酸烷铵理解为，在该分子中，铵基单元的一个或多个氢原子被一个或多个烷基基团代替。烷基基团可以是支链型或直线形。优选烷基基团具有1-10个碳原子、更优选1-6个碳原子以及还更优选1-4个碳原子。
优选过硼酸碱金属盐为过硼酸锂、过硼酸钾和过硼酸钠。
本发明采用的无机过氧化物优选具有不高于200℃的分解温度。
此外，还可以优选本发明采用的无机过氧化物在室温(20℃)和大气压(1013hPa)条件下是液体。
根据一个特别优选的实施方案，作为无机过氧化物可以采用：氢过氧化物、过氧化铵(Ammoniumperoxid)、单甲基过氧化铵、二甲基过氧化铵、三甲基过氧化铵、单乙基过氧化铵、二乙基过氧化铵、三乙基过氧化铵、单丙基过氧化铵、二丙基过氧化铵、三丙基过氧化铵、单异丙基过氧化铵、二异丙基过氧化铵、三异丙基过氧化铵、单丁基过氧化铵、二丁基过氧化铵和三丁基过氧化铵、过氧化锂、过氧化钠、过氧化钾、过氧化镁、过氧化钙、过氧化钡、过硼酸铵、过硼酸锂、过硼酸钾或过硼酸钠。
根据一个特别优选的实施方案，无机过氧化物指的是过氧化氢、过氧化铵、过氧化钠和过硼酸铵。
此外，作为本发明采用的膏体中含有的烧结助剂可以使用(b3)无机酸。
优选无机酸指的是含氧的无机酸。
根据另一个优选的实施方案，作为无机酸可以采用磷酸。磷酸通常理解为是具有至少一个磷原子的无机酸。
优选，本发明作为烧结助剂所采用的磷酸可以是邻磷酸、二磷酸、偏磷酸和多聚磷酸。
根据又一个优选的实施方案，至少一种烧结助剂还指的是：(b4)具有1-4个碳原子的有机酸的盐、(b5)具有1-4个碳原子的有机酸的酯或(b6)羰基络合物。这些烧结助剂显然确保使干扰烧结过程的金属氧化物还原，该金属氧化物可以存在于膏体中含有的金属颗粒的表面上。出于这样的原因，作为烧结助剂还可以采用这样的化合物，这些化合物在烧结过程中释放出还原剂。还原剂优选为一氧化碳。具有1-4个碳原子的有机酸的盐、具有1-4个碳原子的有机酸的酯和羰基络合物可以用作烧结助剂，因为它们显然可以在烧结过程中释放出一氧化碳，并由于金属氧化物的还原实现了在温度低于250℃的条件下形成对应的金属，其中，金属氧化物包含在膏体中含有的金属颗粒的表面上。
(b4)具有1-4个碳原子的有机酸的盐、(b5)具有1-4个碳原子的有机酸的酯和(b6)羰基络合物能够用作烧结助剂的适用性同理可以追溯到前述说明内容中，对于采用膏体的元件烧结一方面优势在于，在膏体中含有的颗粒优选用脂肪酸涂层，以避免颗粒的凝聚，而另一方面该涂层还导致，使不低于250℃的烧结温度降低。根据该实施例采用的、可以用作烧结助剂的化合物的适用性也同理可以追溯到前述说明内容中，位于涂层下方的金属颗粒表面通常至少部分氧化，而这一点会对烧结所需的扩散过程产生影响。
根据本发明，具有1-4个碳原子的有机酸的盐、具有1-4个碳原子的有机酸的酯和羰基络合物能够用作烧结助剂，这是因为它们在烧结过程中能够释放出一氧化碳，或在它们的燃烧过程中产生一氧化碳。在烧结过程中释放的一氧化碳是还原剂，并且作为还原剂能够使位于金属颗粒表面上的金属氧化物还原。金属氧化物的去除实现了不受妨碍的扩散，以及由此使扩散速度随之提高。另外，在金属氧化物的还原过程中，还就地生成活性金属，这样的活性金属又进一步利于烧结过程。此外，在烧结过程中，该活性金属可以填充位于金属颗粒的金属原子之间的空隙，并且由此使待连接元件之间的接触位置的孔隙度显著降低。由此实现非常稳定的、并具有导热性和导电性的接触位置。
由于至今尚未明确的原因，具有1-4个碳原子的有机酸的盐、具有1-4个碳原子的有机酸的酯和羰基络合物还显示出这样的优势：在银颗粒上含有的涂层化合物的燃尽能够在温度低于250℃的条件下进行。由此实现了，在温度低于250℃的条件下金属颗粒的表面能够同于烧结过程。
根据本发明，作为烧结助剂可以采用(b4)具有1-4个碳原子的有机酸的盐。
根据一个优选的实施方案，采用这样的有机酸盐，其中的有机酸含有1-3个碳原子。
在本发明的范围内，有机酸是具有至少一个羧酸基团的有机化合物。该有机酸能够用以下化学式表示：
R-COOH    化学式(I)
其中，R表示一个有机残基。
相应地，根据本发明，有机酸盐是这样的化合物，该化合物含有至少一种阴离子成分，该阴离子成分具有至少一个具有羧酸基团的单元，以一个质子分裂出去的形式，并且该化合物具有作为阳离子成分的与质子不同的阳离子类型。因此，有机化合物的盐用以下化学式表示：
R-COOX    化学式(II)
其中，X表示任一阳离子成分。
根据本发明，R表示一个有机残基，其具有1-3个碳原子。
在本发明的范围内可以优选，盐在金属膏中不以游离形式存在。相应地，在本发明的一个实施方案中，作为烧结助剂采用具有1-4个碳原子的有机酸盐，作为在本发明膏体中含有的溶剂优选采用非质子溶剂。
具有1-4个碳原子的有机酸可以优选为单酸或二元酸。有机酸可以是单质子酸或多质子酸、特别是二质子酸。
有机酸除了至少一个羧酸基团以外还可以具有至少一个其它功能的基团。这样的功能基团例如可以是另一个羧基基团、酯基、酮基、醛基、羟基、氨基、酰胺基、亚胺基、腈基、氰基基团或卤素原子，卤素原子特别为氟原子、氯原子或溴原子。
有机酸除了形式上在至少一个羧酸单元的C＝O-基团中存在的双键以外，还含有其它的双键。
优选作为烧结助剂采用由酸衍生的盐，该酸选自组：醋酸、碳酸、甲酸、乳酸和草酸。
本发明采用的盐的阳离子成分可以优选采用金属阳离子。
金属阳离子优选为对氧亲和力高的金属的阳离子。假设，在烧结过程中这样的金属能够与氧键合，并由此这样实现反应平衡：通过由烧结助剂释放出的一氧化碳与位于金属颗粒表面上的金属氧化物的反应而在产物一侧生成二氧化碳和金属。
优选金属阳离子为：镁、铝、铜(I)、铜(II)、银(I)、银(II)、锰(III)、铁(II)、铁(III)、钴(II)和锡(II)。
根据一个特别优选的实施方案，作为烧结助剂采用的、有机酸具有1-4个碳原子的至少一种有机酸盐选自组：乙酸铜(II)、乙酸铁(II)、乙酸锡(II)、碳酸铁(II)、碳酸铜(II)、甲酸镁、甲酸铝、甲酸铁(II)、甲酸锡(II)、甲酸铜(II)、甲酸银(II)、甲酸锰(III)、乳酸铜(II)、乳酸银(I)、草酸铁(II)、草酸铁(III)和草酸钴(II)。
当然还可以根据本发明的实施方案，金属膏作为具有1-4个碳原子的有机酸的盐含有铜、银、金、镍、钯或铂的碳酸盐、乳酸盐或甲酸盐，特别含有碳酸银、乳酸银、甲酸银或乳酸铜。
根据本发明，作为烧结助剂还可以采用(b5)具有1-4个碳原子的有机酸的酯。
本发明采用的酯从具有1-4个碳原子的有机酸衍生而来，这种有机酸优选是与上文所述有机酸盐类似的、具有1-4个碳原子的有机酸。
因此，本发明采用的酯优选为单酯或多酯、特别是二酯。
在本发明的范围内，酯代表这样一种化合物，在该化合物中，具有1-4个碳原子的有机酸的至少一个羧酸单元的氢根据化学式由一个有机基团来代替。
因此，酯是这样的化合物，该化合物用上述化学式(II)来表示，然而其中，基X表示一个有机基团。
如果作为酯采用具有1-4个碳原子的有机酸二酯，那么根据化学式两个羧酸单元的氢原子或一个二质子酸的一个羧酸单元的氢原子被有机基团代替。这些有机基团可以是相同或不同的。
根据本发明，至少一个有机基团在具有1-4个碳原子的有机酸的至少一个羧酸单元中代替至少一个氢原子，优选每个基团具有1-10个、更优选1-7以及还更优选1-4个碳原子。
这种有机酸可以是支链型或直线型，但是优选为直线型。
有机基团可以携带杂原子。杂原子特别为氧、氮和卤素，卤素诸如为氟、氯、溴或碘。然而还可以优选，有机基团不携带杂原子。
如果有机基团中具有杂原子，那么该杂原子可以是一个功能基团的一部分。这些功能基团例如为羧基基团、酯基、酮基、醛基、氨基、酰胺基、偶氮基、亚胺基、腈基或氰基基团。
有机基团可以是脂肪基团或芳香基团。优选有机基团为脂肪基团。
根据一个特别优选的实施方案，脂肪基团是一个烷基基团。该烷基基团优选具有1-10、更优选1-7以及还更优选1-4个碳原子。根据一个实施方案，烷基基团是直线型的。优选烷基基团不含杂原子。特别优选烷基基团为甲基、乙基、丙基和丁基基团。
因此，本发明采用的具有1-4个碳原子的有机酸的酯优选选自组：甲基酯、乙基酯、丙基酯和丁基酯。
根据该实施例，本发明的具有1-4个碳原子的有机酸的酯指的是这样的化合物，该化合物可以用化学式(II)来表示，其中，基X表示一个烷基基团，优选为甲基、乙基、丙基和丁基基团。
因此特别优选，具有1-4个碳原子的有机酸的酯为乙酸甲酯、乙酸乙酯、乙酸丙酯、乙酸丁酯、碳酸二甲酯、碳酸二乙酯、碳酸二丙酯、碳酸二丁酯、碳酸甲乙酯、碳酸甲丙酯、碳酸甲丁酯、碳酸乙丙酯、碳酸乙丁酯、甲酸甲酯、甲酸乙酯、甲酸丙酯、甲酸丁酯、乳酸甲酯、乳乙酸酯、乳酸丙酯、乳酸丁酯、草酸二甲酯、草酸二乙酯、草酸二丙酯、草酸二丁酯。
根据本发明，作为烧结助剂还可以采用(b6)羰基络合物。
根据本发明，羰基络合物理解为含有羰基基团的金属络合物，其中，至少有一个CO-分子并列连接在至少一个金属原子上。
除了至少一个CO-分子以外，羰基络合物还可以具有其它的配合基。其它的配合基可以是元素配合基或分子配合基。
配合基可以是单齿或多齿的。
优选元素配合基是氢和卤素。卤素优选为氟、氯、溴和碘。
优选分子配合基是氧化氮、氰化物和有机配合基。
有机配合基优选指的是离子或不饱和配合基。
有机配合基是具有至少一个碳原子的有机配合基。优选具有至少一个碳原子的有机配合基指的是具有2-20、特别优选2-16以及还尤其优选2-12个碳原子的有机配合基。
有机配合基可以是支链型或直线型。
有机配合基还可以是饱和、或单不饱和、或多不饱和的。
有机配合基还可以具有环形结构。在该环形结构中还可以含有至少一个杂原子。该至少一个杂原子可以优选为氮或氧。
有机配合基还可以指的是芳香配合基。
作为离子配合基可以优选采用烷基配合基，优选为直线型烷基配合基、例如甲基配合基，或环戊二烯基。
作为不饱和有机配合基可以优选为烯烃、共轭或非共轭的二烯和烯丙基。根据本发明，有机基团还可以设为π-烯丙基和芳香烃-过渡金属络合物。
本发明采用的羰基络合物可以含有一个或多个金属原子。如果羰基络合物具有多个金属原子，那么这些金属原子可以是相同或不同的。
羰基络合物的金属优选采用这样的金属，该金属对氧具有较高的亲和力。
优选羰基络合物具有至少一种过渡金属元素，也就是指元素周期表中的3-11组元素。
根据本发明还可以优选，本发明采用的金属羰基的至少一种金属是选自组：钒、钼、钨、锰、铁、钌、锇(Osram)、钴和镍。
根据优选的实施方式，羰基络合物涉及羰基金属。
在本发明的范围，羰基金属是这样的化合物，该化合物为单核或多核配位化合物，在该化合物中，一氧化碳分子配位地与金属原子相连。
根据本发明，羰基金属可以包括一个或多个金属原子。
羰基金属中所包含的金属原子可以是相同或不同的。
羰基金属原子优选涉及过渡金属元素，即元素周期表中的3-11组元素。
根据优选的实施方式，本发明所采用的羰基金属的至少一种金属涉及这样的金属，其选自组：钒、钼、钨、锰、铁、钌、锇(Osram)、钴和镍。
羰基金属可以电荷中性或作为盐而存在。这里的盐可以是单价或多价盐。
根据一个特别优选的实施方案，本发明作为烧结助剂采用的金属络合物选自组：六羰基钒(V(CO)6)、六羰基钼(Mo(CO)6)、六羰基钨(W(CO)6)、十羰基二锰(Mn2(CO)10)、甲基环戊二烯基三羰基锰((CH3C5H4)Mn(CO)3)、五羰基铁(Fe(CO)5)、九羰基二铁(Fe2(CO)9)、十二羰基三铁(Fe3(CO)12)、四羰基高铁酸二氢(II)(H2[Fe(CO)4])、二羰基二碘铁(Fe(CO)2I2)、羰基五氰基高铁酸三钾(K3[Fe(CN)5CO])、1，2-双(六甲基苯)-四羰基二铁(0)(C12H18Fe(CO)4FeC12H18)、十五羰基碳化五铁(Fe5C(CO)15)、五羰基钌(Ru(CO)5)、九羰基二钌(Ru2(CO)9)、十二羰基三钌(Ru3(CO)12)、十六羰基六钌(Ru6(CO)16)、五羰基锇(Os(CO)5)、十二羰基三锇(Os3(CO)12)、十六羰基五锇(Os5(CO)16)、十八羰基六锇(Os6(CO)18)、八羰基二锇(Os2(CO)8)、十二羰基四锇(Os4(CO)12)、十六羰基六锇(Co6(CO)16)、四羰基镍(Ni(CO)4)、四羰基高铁酸二钠(Na2[Fe(CO)4])。
因此，通过采用上述的烧结助剂可以明显降低进行烧结时的过程温度。在此令人意想不到的是，即使涂层化合物的燃烧在温度低于250℃的条件下进行，也不会造成金属颗粒的凝聚，而且在待连接的元件之间形成均匀稳定的接触位置。
根据一个特别优选的实施方案，烧结助剂与金属颗粒涂层中含有的有机化合物(涂层化合物)的摩尔比在1∶1至150∶1的范围内，更优选在3∶1至100∶1的范围内，还更优选在5∶1至80∶1的范围内，以及特别在10∶1至80∶1的范围内。根据本发明，烧结助剂与涂层化合物的摩尔比表示的是：(i)膏体中含有烧结助剂的物质总量与(ii)金属颗粒涂层中含有的涂层化合物的物质总量的商。如果膏体例如含有作为烧结助剂的甲酸铝0.025mol和甲酸铜0.015mol，而作为唯一的涂层化合物含硬脂酸钾0.0008mol，那么烧结助剂与涂层化合物的摩尔比就为50∶1。
在本发明的优选范围内，烧结助剂与涂层化合物的比还具有其它有利的影响。由此一方面确保实现：在烧结过程中，作为涂层化合物燃烧的产物生成足够的一氧化碳，用于金属氧化物的还原。另一方面，烧结助剂的含量还不会高到使烧结过程受到损害。如前文所述，根据本发明还可以优选，涂层中金属颗粒所含有的有机化合物指的是游离的脂肪酸、脂肪酸盐或脂肪酸酯，这种化合物优选具有10-24个碳原子，更优选具有12-18个碳原子。
上述影响能够导致：通过所采用的烧结助剂可以实现，使烧结温度降低到低于250℃，并且此外还在通过烧结处理待连接的元件之间实现稳定、导热以及导电良好的接触位置。
根据一个优选的实施方案，膏体含有至少一种金属前体。
在本发明的范围内，金属前体可以理解为这样的化合物，该化合物在温度低于250℃、存在有含在膏体中的金属颗粒的条件下而分解成金属前体的金属。优选然后，在使用金属前体的情况下，可以在烧结过程中就地生成金属。可以以简单的方式了解到，一种化合物是否指的是优选实施例中金属前体。那么例如可以使含有待测试化合物的膏体在具有银表面的基板上析出，在250℃的条件下加热，并且在该温度条件下保持20分钟。然后检测，在该条件下待测试的化合物是否分解出金属。对此例如可以在测试之前，先对含有金属的膏体组分的含量进行调节，并由此计算出金属的理论值。在测试之后，在基板上析出的材料的量可以进行重量测定。该在基板上析出的材料的量对应于金属的理论值，其中，要考虑到其它测量误差，根据该优选实施方案，经测试的化合物指的是金属前体。
根据另一个优选的实施方案，金属前体具有金属，该金属还含在金属颗粒中。根据一个特别优选的实施方案，金属前体在此具有金属银或铜。
可以优选，作为金属前体采用金属碳酸盐、金属乳酸盐、金属甲酸盐、金属柠檬酸盐、金属氧化物或金属脂肪酸盐，优选该脂肪酸盐具有6-24个碳原子。
在特别的实施方案中，作为金属前体采用碳酸银、乳酸银(I)、甲酸银(II)、柠檬酸银、氧化银(例如AgO或Ag2O)、乳酸铜(II)、硬脂酸铜、氧化铜(例如Cu2O或CuO)或氧化金(例如Au2O或AuO)。
根据一个特别优选的实施方案，金属前体选自组：碳酸银和氧化银。
如果可以，金属前体在膏体中优选以颗粒形式存在，特别优选呈片状结构。
采用在烧结过程中就地生成金属的金属前体可以实现，就地生成的金属在烧结过程中能够封住膏体中含有的金属颗粒之间的空隙。以这种方式能够使待连接元件之间的接触位置的孔隙度降低。
至少在强化状态下，膏体还含有至少一种化合物，该化合物可以用作溶剂。对此考虑传统的用于金属膏的溶剂。例如作为溶剂可以采用：α-松油醇((R)-(+)-α-松油醇、(S)-(-)-α-松油醇或外消旋物)、β-松油醇、γ-松油醇、δ-松油醇、前述松油醇混合物、N-甲基-2-吡咯烷酮、乙二醇、二甲基乙酰胺、1-十三醇、2-十三醇、3-十三醇、4-十三醇、5-十三醇、6-十三醇、异十三醇、二元酯(优选戊二酸二甲酯、己二酸二甲酯或琥珀酸二甲酯、或它们的混合物)、甘油、二甘醇、三甘醇或它们的混合物。
此外，膏体还可以含有至少一种聚合物，以满足对膏体特征的需求。而且另一方面，优势还在于：膏体不含有聚合物或聚合物含量很少，这是因为，聚合物、特别是热固性塑料通常在高于250℃的条件下才能燃尽，并因此对于膏体的烧结能力产生不利影响。这一点同样特别适用于热固性塑料或它的原料。热固性塑料的原料可以理解为这样的化合物，该化合物在具有其它膏体成分的情况下可以硬化成热固性塑料。由此，这种热固性塑料或它的原料的平均重量的分子量通常小于700。根据一个优选的实施方案，平均重量的分子量小于700的聚合物含量相对于膏体的总重量不超过6重量百分比。
此外，在金属膏中可以含有其它成分，例如惯用的分散剂、表面活性剂、消泡剂、粘合剂或粘度控制剂。
本发明采用的膏体优选涂覆在载体的表面上，以形成至少一个结构部件。在此，位于载体表面上的该结构部件首先不含有强化的膏体，接下来再对膏体进行强化。
在此，膏体在载体表面上的涂覆这样实现：在载体表面上提供所希望的样式，这种样式由含有膏体的结构部件构成。
在此，膏体在载体表面上的涂覆可以通过惯用的方法来实现。优选膏体通过印刷方式、例如筛网印刷或打字蜡纸印刷进行涂覆。
优选由膏体构成的各个结构部件之间的距离这样选择：形成一种样式，该样式适合于使随后在烧结预成型制品上相邻设置的元件在烧结过程之后设置于待连接的元件上。
涂覆的膏体的几何形状优选这样选择：在膏体强化后得到这样的结构部件，该结构部件能够与一个元件这样组装在一起，即，使该元件表面的所希望的区域与膏体形成接触。由此实现了，与结构部件组装在一起的元件的仅一部分表面或整个表面与该结构部件形成接触。
所涂覆的膏体的厚度优选与待连接元件的尺寸相适应。例如要将第一半导体芯片与引线框架的处于凹陷部(Aussparung)的第一接触面连接，并且将第二半导体芯片与引线框架的不处于凹陷部的第二接触面连接，那么可以使第一半导体芯片与引线框架的第一接触面连接的结构部件通过将膏体以较大的厚度进行涂覆而形成，该涂覆厚度大于使第二半导体芯片与引线框架的第二接触面连接的结构部件的涂覆厚度。由此提供了这样一种结构，该结构根据待连接元件的距离而具有不同高度的结构部件。
膏体的涂覆厚度没有其它限制。通常的涂覆厚度在10-300μm的范围内，优选在10-200μm的范围内以及特别优选在20-50μm的范围内。
对本发明采用的膏体进行强化处理，从而在载体表面上形成至少一个结构部件。在本发明的范围内，使膏体这样强化，即，使膏体具有坚硬结构，由此在重力条件下使膏体不受变形影响。
膏体的强化优选通过除去室温条件下膏体的液体成分来实现，特别是除去溶剂。为了除去室温条件下的液体成分，优选对膏体进行干燥处理。
相应地，干燥处理可以理解为除去含在膏体中的至少一种溶剂。溶剂的除去可以量化实现。另一方面也有可能，溶剂残留物保留在膏体中。
根据一个优选的实施方案，在干燥处理中，相对于膏体中原始的溶剂重量，至少99.5重量百分比、更优选至少99.7重量百分比以及还更优选至少99.9重量百分比的溶剂被除去。
优选，强化的膏体相对于干燥后的膏体重量含有不多于0.5重量百分比的溶剂，更优选不多于0.4重量百分比，还更优选不多于0.3重量百分比，特别优选不多于0.2重量百分比以及尤其特别优选不多于0.1重量百分比。
特别优选，强化的膏体相对于干燥后的膏体重量含有不多于0.5重量百分比的下述化合物，更优选不多于0.4重量百分比，还更优选不多于0.3重量百分比，特别优选不多于0.2重量百分比以及尤其特别优选不多于0.1重量百分比；其中，该化合物在25℃和气压1013hPa的条件下是液体。
根据一个优选的实施方案，强化的膏体相对于强化膏体的重量含有75-95重量百分比的金属颗粒、0.1-15重量百分比的烧结助剂、0-0.5重量百分比的溶剂、0-12重量百分比的金属前体以及0-10重量百分比的其它成分。
根据一个特别优选的实施方案，强化的膏体相对于强化膏体的重量含有80-95重量百分比的金属颗粒、2-15重量百分比的烧结助剂、0-0.3重量百分比的溶剂、0-12重量百分比的金属前体以及0-10重量百分比的其它成分。
根据一个更特别优选的实施方案，强化的膏体相对于强化膏体的重量含有80-95重量百分比的金属颗粒、3-15重量百分比的烧结助剂、0-0.1重量百分比的溶剂、0-12重量百分比的金属前体以及0-10重量百分比的其它成分。
在一定条件下对膏体进行强化，特别是对膏体进行干燥，该条件确保使膏体不会完全烧结。因此要求，强化的膏体具有至少一个残留活性，用于随后进行的烧结处理。然而由此还可以具有优势的是：用于干燥的条件选择还能够使膏体部分烧结。这样例如可以实现，使膏体的稳定性以及膏体在基板上的粘附性得到提高。膏体的稳定性以及膏体在基板上的粘附性通过至少一种有机化合物明显得到提高，该有机化合物作为涂层位于金属颗粒上。由此可以得到，在温度升高时，少量的涂层化合物脱落并用作膏体的金属颗粒之间、或膏体的金属颗粒与载体之间的粘合剂。
膏体的干燥处理优选在一定的温度、气压、空气湿度和时间条件下进行，这些条件适合于将溶剂从膏体中尽可能地除去，而不需要在干燥处理之后在膏体内部完全进行烧结处理。
优选，干燥处理在温度低于200℃以及更优选低于150℃、例如约为120℃的条件下优选进行3-60分钟。为进行干燥处理可以采用惯用的干燥设备。
在膏体的强化过程中通常导致膏体的孔隙度升高。令人意想不到的是，当强化的膏体的孔隙度升高时，能够以特别简单的方式实现由膏体构成的结构部件在待组装元件上的连接。孔隙度在此理解为相对于强化膏体的体积的孔隙体积份额。根据一个优选的实施方案，强化膏体的孔隙度优选为至少20体积百分比，更优选至少40体积百分比，还更优选至少60体积百分比，特别优选至少80体积百分比以及尤其特别优选至少90体积百分比。强化膏体的孔隙度能够以简单的方式通过膏体中含有溶剂的量和种类、干燥时间和干燥温度得到调节。
此外还可以在含有强化膏体的至少一个结构部件上覆盖上薄膜。该薄膜可以特别用于防止结构部件受损，例如由于机械应力造成的损坏。优选该薄膜覆盖住烧结预成型制品的载体表面上的、整个的、由各个结构部件形成的结构。薄膜例如可以是由聚合物构成的薄膜或是一张纸。如果薄膜覆盖在至少一个结构部件上，那么在进行本发明方法的同时除去该薄膜。首先将薄膜除去，之后再使烧结预成型制品表面上的含有强化膏体的至少一个结构部件与第一元件的待连接表面形成接触。
根据本发明，使至少两个元件相互连接。这些元件各自具有至少一个待连接的表面。元件的待连接表面在此理解为该元件的、要与另一元件的表面通过烧结相连接的表面。
至少两个待连接元件在此表示为第一元件和第二元件。“第一”和“第二”在此用于在概念上区分待连接的元件。特别是由此对于元件的类型和形状没有特别要求。
为实现连接，使烧结预成型制品的载体表面上的至少一个结构部件与第一元件的待连接表面形成接触。因此，通过在烧结预成型制品的载体表面上的至少一个结构部件与第一元件的待连接表面的接触，实现了该第一元件与至少一个结构部件的组装结构，该组装结构与载体形成接触。该组装结构与载体经由至少一个结构部件相接触，其中，通常由于粘附力确保该组装结构粘合在载体上。
优选在烧结预成型制品的载体表面上设有多个结构部件。在这种情况下优选烧结预成型制品的载体表面上的多个结构部件、特别优选烧结预成型制品的载体表面上的所有结构部件都配设有元件，其中包括第一元件。优选在每个结构部件上都设有另一个元件。相应地，优选烧结预成型制品的载体表面上的多个结构部件、特别优选烧结预成型制品的载体表面上的所有结构部件相互独立地设有元件。这些元件优选相邻地设置在一个平面上。
根据一个优选的实施方案，第一元件与设置在烧结预成型制品的载体表面上的至少一个结构部件这样形成接触，即，使在第一元件上当前存在的金属化层与结构部件形成接触。如果多个结构部件相邻地与多个结构部件形成接触，那么同理接触优选这样来实现，即，可以使在单个元件上的金属化层与结构部件形成接触。
根据一个优选的实施方案，至少一个结构部件与第一元件的待连接表面的接触、优选多个结构部件与单个元件的待连接表面的相互独立的接触通过压制来实现。一方面，由此可以使具有结构部件的烧结预成型制品压制在第一元件的待连接表面上，从而使该结构部件和第一元件的待连接表面相互连接。另一方面，还可以使第一元件的待连接表面压制在烧结预成型制品的至少一个结构部件上。
这种压制方法不需要特别的措施。优选该压制方法在低于烧结温度的条件下、并且更优选在低于200℃的条件下进行，例如在100-200℃的温度范围内进行。在此可以优选，使至少设有第一元件的烧结预成型制品加热到所需要的压制温度。压制处理可以在适度的压力条件下进行，优选压力至少为0.1N/mm2，更优选压力至少为0.5N/mm2，还更优选压力至少为1.0N/mm2，以及特别优选压力至少为2N/mm2。为实现压制处理，可以采用惯用的冲压装置或压制装置。
优选压制处理这样实现，在至少一个结构部件和第一元件之间实现粘合设置，这种粘合设置实现了：将由第一元件和至少一个结构部件构成的组装结构从烧结预成型制品的载体上简单拆除。
至少一个结构部件和第一元件的待连接表面形成接触之后，由此形成与载体形成接触的、优选粘合在载体上的组装结构，该组装结构具有至少一个结构部件和至少第一元件，其中，可能在第一元件表面上含有的金属化层与结构部件形成接触。
然后，使由第一元件和至少一个结构部件构成的组装结构从载体上除去。对此一方面，可以使载体从烧结预成型制品的至少一个结构部件上拆去，该载体覆盖住位于至少第一元件上的至少一个结构部件。接下来优选使载体从烧结预成型制品的所有结构部件上除去。另一方面，还可以使由第一元件和至少一个结构部件构成的组装结构从载体上拆除。该方案可以实现，是因为第一元件和至少一个结构部件之间的粘合力大于组装结构和载体之间的粘合力。
在将由第一元件和至少一个结构部件构成的组装结构从载体上除去之后，与第一元件连接的结构部件用于与第二元件形成接触。如果在烧结预成型制品上具有多个结构部件，那么在将组装结构从载体上拆去之后，相应地，多个带有元件的结构部件用于与第二元件形成接触。
接下来，根据本发明，第二元件的待连接表面与由第一元件和至少一个结构部件构成的组装结构的至少一个结构部件形成接触，从而提供这样的烧结组装结构，其由第一元件、第二元件和位于二者之间的结构部件构成。
根据一个优选的结构方案，第二元件的待连接表面与至少一个结构部件这样形成接触，即，使可能存在于第二元件的表面上的金属化层与至少一个结构部件形成接触。因此，优选实现了这样的烧结组装结构，其具有第一元件、第二元件和位于二者之间的结构部件，第一元件具有金属化层，第二元件也具有金属化层，其中，第一元件的金属化层和第二元件的金属化层经由结构部件彼此相连。
根据另一个优选的结构方案，还可以使第二元件的待连接表面具有至少一个结构部件。该结构部件例如可以这样形成：在此制备所述的烧结预成型制品，使烧结预成型制品的载体表面上的至少一个结构部件与第二元件的待连接表面相接触，然后使由第二元件和结构部件构成的组装结构从烧结预成型制品的载体上除去。根据该实施例，第一元件和第二元件都具有至少一个结构部件。第一元件和第二元件的结构部件能够最终相接触，从而形成这样的烧结组装结构，其由第一元件、第二元件和位于二者之间的结构部件构成。在这种情况下，一部分结构部件来自烧结预成型制品与第一元件的接触构造，而另一部结构部件来自烧结预成型制品与第二元件的接触构造。接下来，如果从第二元件的表面来说，由此还包括这样的情况：根据前述实施方案，该第二元件已经具有一个结构部件。因此在本发明的方法中，第二元件的待连接表面能够与由第一元件和至少一个结构部件构成的组装结构的至少一个结构部件、又通过另一个结构部件而形成接触，该另一个结构部件是由第二元件和该结构部件构成的组装结构的一部分。
第二元件的待连接表面与至少一个结构部件的接触优选通过压制来实现。一方面由此实现了，将具有第一元件和结构部件的组装结构压制在第二元件的待连接表面上，从而使第一元件经由结构部件与第二元件的待连接表面相连接。另一方面还可以，将第二元件的待连接表面压制在与第一元件相连接的结构部件上。
对于压制方法不需要特别的措施。优选该压制方法在低于烧结温度的条件下、并且更优选在低于200℃的条件下进行，例如在100-200℃的温度范围内进行。在此可以优选，在形成接触之前，首先将由第一元件和至少一个结构部件构成的组装结构加热到100-200℃的温度范围。同样可以优选，在形成接触之前，首先将第二元件加热到100-200℃的温度范围。特别可以优选，在形成接触之前，将由第一元件和至少一个结构部件构成的组装结构以及第二元件都加热到100-200℃的温度范围。压制处理可以在适度的压力条件下进行，优选压力至少为0.1N/mm2，更优选压力至少为0.5N/mm2，还更优选压力至少为1.0N/mm2，以及特别优选压力至少为2N/mm2。为实现压制处理，可以采用惯用的冲压装置或压制装置。
最后对由第一元件、第二元件和位于二者之间的结构部件构成的烧结组装结构进行烧结处理。
烧结处理指的是低温烧结处理。根据本发明，低温烧结处理可以理解为这样的烧结处理，即，优选烧结温度低于250℃，更优选温度低于220℃，还更优选温度低于200℃，以及特别优选温度低于180℃。
烧结中的过程压力优选低于30MPa，更优选低于5MPa，以及还更优选低于1MPa。由于采用本发明的膏体实现了，烧结处理甚至可以不需要过程压力就能进行，也就是过程压力为0MPa。
烧结时间取决于过程压力，并且优选位于2-45分钟范围。
根据本发明，烧结处理可以在一定气氛中进行，并没有其它限制。然而优选烧结处理在含氧的气氛中进行。
烧结处理在惯用的适于烧结的装置中进行，其中，优选可以对前述的过程参数进行调节。
前述用于连接至少两个元件的方法实现了：对于多个元件的过程经济的、具有优势的且至少部分同时进行的操作；烧结层的结构化设置；以及使烧结温度降低到低于250℃。
从过程经济的角度上看，本发明的方法特别具有优势，因为连接的建立是通过使用已经强化的膏体来实现的。因此根据本发明，直接在烧结之前，不需要对膏体进行干燥。由此能够显著缩短了过程时间。此外，在用户端不需要应用膏体。用户端膏体的应用，通常需要特别的应用装置，其中，常会生成含贵金属的废物。根据本发明，在用户端，既避免了废物清除和废物处理的问题，又避免了对应用设备的耗费工本的清洗问题。
根据本发明，因为在元件的接触之前，首先对膏体进行强化，所以在元件经由结构部件的接触过程中形成非常均质化的无孔洞的涂层。由此能够显著改善所形成连接的可靠性。
使各个结构部件在烧结预成型制品的载体上预先确定尺寸，以及可以制成不同的几何形状和厚度，由此实现了，元件的接触面的连接，即使是这些接触面不在一个平面上也能实现。因此特别还可以使弯曲的引线框架或槽型的引线框架与对应的元件相连接。
通过对厚度、几何形状、成分和结构部件或结构的体积进行整体设计，可以实现待连接元件之间的接触层的可重复的性能，这些元件用于本发明方法的应用中，在这些应用中对精度要求很高。
本发明的显著优势在于，对于烧结处理所需的温度可以通过采用含在强化膏体中的烧结助剂大幅度降低。
具体实施方式
实施例1：
通过搅拌由以下组分构成的混合物而制成均相的金属膏，这些金属膏用膏体1-4表示：
Figure BSA00000570353400331
膏体1-4在单独的试验中各自作为限定的结构部件分别覆盖有50μm厚的聚酯薄膜，然后在100℃的温度条件下干燥10分钟，以获得烧结预成型制品1-4，该烧结预成型制品各自包括具有结构部件的载体(聚酯薄膜)，这些结构部件由所制备的膏体1-4构成。
接下来，将芯片以2MPa的压力压装在各个烧结预成型制品1-4的结构部件上，这些芯片具有镍银金属合金和25mm2的表面积。由此实现芯片和结构部件的组装结构，该组装结构与载体形成接触。随后，将由芯片和结构部件构成的组装结构从载体上取走，而后安装在直接铜键合(Direct Copper Bonded，DCB)基板的镍金金属合金上。然后，由DCB基板、芯片和位于其间的结构部件构成的三明治式组装结构在200℃的温度、10Mp的压力条件下烧结2分钟。
实施例1的结论：
在实施例1中获得的位于DCB基板和芯片之间的接触层的剪切强度由传统的剪切测试来测定。
在下表中对剪切测试的结果进行汇总：
Figure BSA00000570353400332
Figure BSA00000570353400341
由此得出，甲酸铝的添加导致：采用烧结预成型制品获得的、芯片和基板之间的接触层的剪切强度的明显提高。通过共同添加甲酸铝和碳酸银实现仍然稳定的连接。
实施例2：
通过搅拌由以下组分构成的混合物而制成均相的金属膏，这些金属膏用膏体5和6表示：
Figure BSA00000570353400342
膏体5和6用于制成烧结预成型制品(烧结预成型制品5和6)，这些烧结预成型制品又用于将芯片和基板固定在一起。在此，进行类似前述实施例1的步骤，但是其中，所采用的芯片的表面积为100mm2。
实施例2的结论：
在实施例2中获得的位于DCB基板和芯片之间的接触层的剪切强度由传统的剪切测试来测定。
由此得出，采用烧结预成型制品6制成的接触层的剪切强度明显高于采用烧结预成型制品5获得的接触层的剪切强度。因而，在此添加本发明的烧结助剂还能够对芯片和基板之间所形成的接触层的稳定性产生积极影响。

Claims (15)

1.一种烧结预成型制品，其包括具有表面的载体，该表面具有至少一个结构部件，所述结构部件含有强化的膏体，其特征在于，所述强化的膏体含有
(a)金属颗粒，所述金属颗粒具有涂层，所述涂层含有至少一种有机化合物；以及
(b)至少一种烧结助剂，所述烧结助剂选自组：(b1)有机过氧化物、(b2)无机过氧化物、(b3)无机酸、(b4)具有1-4个碳原子的有机酸的盐、(b5)具有1-4个碳原子的有机酸的酯以及(b6)羰基络合物；并且
所述载体的具有强化膏体的表面与该膏体的成分不发生反应。
2.根据权利要求1所述的烧结预成型制品，其特征在于，所述金属颗粒为银颗粒。
3.根据权利要求1或2所述的烧结预成型制品，其特征在于，所述涂层的至少一种有机化合物选自组：脂肪酸、脂肪酸盐、脂肪酸酯。
4.根据权利要求1至3中任意一项所述的烧结预成型制品，其特征在于，所述烧结助剂与涂层中所含的有机化合物的摩尔比在1∶1至150∶1的范围内。
5.根据权利要求1至4中任意一项所述的烧结预成型制品，其特征在于，所述有机过氧化物选自组：二异丁酰基过氧化物、过氧新癸酸枯烯酯、过氧新癸酸1，1，3，3-四甲基丁酯、过氧二碳酸二正丙酯、过氧新癸酸叔戊酯、过氧二碳酸二(2-乙基己)酯、过氧新癸酸叔丁酯、过氧二碳酸二正丁酯、过氧新戊酸1，1，3，3-四甲基丁酯、过氧新庚酸叔丁酯、过氧新戊酸叔戊酯、过氧新戊酸叔丁酯、二(3，5，5-三甲基己酰基)过氧化物、过氧化-2-乙基己酸叔丁酯、过氧异丁酸叔丁酯、1，1-二(叔丁基过氧基)-3，3，5-三甲基环己烷、1，1-二(叔丁基过氧基)-环己烷、过氧化-3，5，5-三甲基己酸叔丁酯、2，2-二(叔丁基过氧基)-丁烷、过氧化异丙基碳酸叔丁酯、过氧乙酸叔丁酯、2，5-二甲基-2，5-二(2-乙基己酰基过氧基)-己烷、过氧化-2-乙基己酸1，1，3，3-四甲基丁酯、过氧化-2-乙基己酸叔戊酯、过氧化二乙基醋酸叔丁酯、过氧化-2-乙基己基碳酸叔戊酯、过氧化-2-乙基己基碳酸叔丁酯、过氧苯甲酸叔丁酯、二叔戊基过氧化物、2，5-二甲基-2，5-二(叔丁基过氧基)-己烷、叔丁基枯基过氧化物、2，5-二甲基-2，5-二(叔丁基过氧基)-3-己炔、二叔丁基过氧化物、3，6，9-三乙基-3，6，9-三甲基-1，4，7-三过氧壬烷(triperoxonan)、二异丙基苯单过氧化氢、萜烷过氧化氢、枯烯过氧化氢、二枯基过氧化物、以及1，1，3，3-四甲基丁基过氧化氢。
6.根据权利要求1至4中任意一项所述的烧结预成型制品，其特征在于，所述无机过氧化物选自组：过氧化氢、过氧化铵、过氧化锂、过氧化钠、过氧化钾、过氧化镁、过氧化钙、过氧化钡和过硼酸盐。
7.根据权利要求1至4中任意一项所述的烧结预成型制品，其特征在于，所述无机酸为磷酸。
8.根据权利要求1至4中任意一项所述的烧结预成型制品，其特征在于，所述盐选自组：醋酸盐、碳酸盐、甲酸盐、乳酸盐和草酸盐。
9.根据权利要求1至4中任意一项所述的烧结预成型制品，其特征在于，所述盐选自组：甲酸镁、甲酸铝、甲酸铁(II)、甲酸锌(II)、甲酸铜(II)、甲酸银(II)和甲酸锰(III)。
10.根据权利要求1至4中任意一项所述的烧结预成型制品，其特征在于，所述盐选自组：乳酸铜(II)和乳酸银(II)。
11.根据权利要求1至4中任意一项所述的烧结预成型制品，其特征在于，所述酯选自组：甲酸甲酯、甲酸乙酯、甲酸丙酯和甲酸丁酯。
12.根据权利要求1至4中任意一项所述的烧结预成型制品，其特征在于，所述羰基络合物选自组：羰基金属。
13.根据权利要求1至12中任意一项所述的烧结预成型制品，其特征在于，在至少一种含有强化膏体的结构部件上覆盖有薄膜。
14.用于连接至少两个元件的方法，其中，
(i)制备根据权利要求1-13中任意一项所述的烧结预成型制品；
(ii)至少使第一元件设有一待连接表面，使第二元件设有一待连接表面；
(iii)使烧结预成型制品的载体表面上的至少一个结构部件与第一元件的待连接表面相接触，以获得由第一元件和至少一个结构部件构成的组装结构，该组装结构与载体相接触；
(iv)使该组装结构与载体分离；
(v)使第二元件的待连接表面与所述由第一元件和至少一个结构部件构成的组装结构的至少一个结构部件相接触，以获得由第一元件、第二元件以及于二者之间设置的结构部件构成的烧结组装结构；并且
(vi)对该烧结组装结构进行烧结处理。
15.根据权利要求14所述的方法，其特征在于，在第五步(v)中，使第二元件的待连接表面与所述由第一元件和至少一个结构部件构成的组装结构的至少一个结构部件经由另一结构部件而形成接触，该另一结构部件是由第二元件和该结构部件构成的组装结构的一部分。
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