CN101662080A - 对用于无压力低温烧结处理的金属膏体的孔隙的控制 - Google Patents

对用于无压力低温烧结处理的金属膏体的孔隙的控制 Download PDF

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Publication number
CN101662080A
CN101662080A CN200910171259A CN200910171259A CN101662080A CN 101662080 A CN101662080 A CN 101662080A CN 200910171259 A CN200910171259 A CN 200910171259A CN 200910171259 A CN200910171259 A CN 200910171259A CN 101662080 A CN101662080 A CN 101662080A
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metal
lotion
weight
solvent
percentage
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沃尔夫冈·施密特
米夏埃尔·舍费尔
汉斯-维尔纳·哈格多恩
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WC Heraus GmbH and Co KG
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WC Heraus GmbH and Co KG
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

一种对用于无压力低温烧结处理的金属膏体的孔隙的控制。本发明能够实现，在元器件的接触面之间产生非常紧固的层，该层有足够的弹性，以至于能够持续地经受机械及热的应变载荷。这由此而实现，即控制相应触点的孔隙。为此而提出一种金属膏体，其包含重量百分比70－90％的金属粉末、重量百分比1－20％的可吸热分解的金属化合物以及重量百分比5－20％的沸点220℃以上的溶剂，其中，金属膏体可放热地凝结成金属连接部。

Description

对用于无压力低温烧结处理的金属膏体的孔隙的控制
技术领域
本发明涉及一种针对压力-及温度敏感的元器件(例如LED或非常薄的硅片)的焊接技术。
背景技术
在粘结压力-及温度敏感的部件时，触点会不利于导热性及导电性。
传统的低温烧结由于其中所使用的较高的200Bar以上的压力而被淘汰。另外，因为在此会根据压力大小要确定出生产的功率模块的性能以及在实际烧结之前必须进行干燥步骤，所以需要很高的运作成本。
根据未公开的文献DE 10 2007 046 901能够实现用于功率电子领域的导电性及导热性良好的连接层。其中，在较低的处理压力中形成多孔的层。
发明内容
本发明的目的在于，要在接触面之间形成多个非常坚固的层，这些层要有足够的弹性，以使得能够经受持续的机械载荷及热应变载荷，并且在凝结的时候可以保持较低的温度和处理压力。
这样因此而实现，可控制相应的触点的孔隙。利用特别是基于银或铜构成的絮片或粉末可以填充大约83％的体积，也就是说会保留大约17％的孔隙。对于最佳的最高连接稳固性的孔隙则关系到待连接的元器件的材料和应用环境。根据本发明，触点的孔隙可以提高或降低。然而，优选的是降低触点的孔隙。通过根据本发明的方法，不仅能够实现触点孔隙的降低，而且还可以确保孔隙均匀地被降低。
为了控制触点的孔隙，接触面之间的金属膏体(尤其是银或铜膏体)放热地凝结。这种金属膏体的凝结优选在低温烧结处理的范围内通过现场形成的金属实现，该金属促成了在所使用的金属膏体的金属颗粒之间空隙的封闭。在此，现场金属的形成通过包含在金属膏体中的金属化合物的分解来实现。为了实现金属膏体尽可能高效的凝结，将延长放热的凝结过程。这种延长通过一种沸点220℃以上的有机溶剂来促成。通过这种延长效应为现场形成的金属保留了很多的时间，以使得金属颗粒之间的空隙得到填充。通过这种方式能够在非常低的处理压力下制造非常稠密的连接层(触点)，该连接层对于孔隙来看与由吸热凝结系统构成的在200Bar下制造的银层非常相似。
根据本发明的目的通过独立权利要求所述的特征部分来实现。从属权利要求描述了优选的实施方式。
相应地，通过本发明提出了一种金属膏体，相对于该金属膏体的重量其包含重量百分比70-90％的金属粉末、重量百分比1-20％的可吸热分解的金属化合物以及重量百分比5-20％的沸点220℃以上的溶剂，其中，金属膏体可放热地凝结成金属连接部。
优选地，相对于该金属膏体的重量，在金属膏体中所包含的金属粉末的重量百分比为72-88％，优选为75-85％，更为优选的为77-85％。
相对于该金属膏体的重量，可吸热分解的金属化合物的成分，其重量百分比为3-18％，优选为4-15％，更为优选的为5-10％。
在根据本发明的金属膏体中，相对于该金属膏体的重量，沸点220℃以上的溶剂的重量百分比为9-20％，优选为10-20％，更为优选的为11-20％，例如可以是12-20％，或也可以是14-20％。
除了金属粉末、可吸热分解的金属化合物以及沸点220℃以上的溶剂，在金属膏体中也可以存在其他的组分。例如优选可以在金属膏体中存在其他的溶剂，例如该溶剂的沸点在220℃以下。在此合适的溶剂是松油醇、N-甲基-2-吡咯烷酮、乙二醇、二甲乙酰胺或者无支链或有支链的C5-C9乙醇。这些另外的组分在金属膏体中相对于该金属膏体的重量可以例如是0-25％的重量百分比。当然也可以不考虑，即除了金属粉末、可吸热分解的金属化合物以及沸点220℃以上的溶剂，在金属膏体中包含其他的组分。尤其可以不考虑，即除了金属粉末、可吸热分解的金属化合物以及沸点220℃以上的溶剂，在金属膏体中包含其他的溶剂。
在本发明的范畴内，对于金属粉末基本上可以使用任何金属粉末。作为金属膏体组分进行描述的概念“金属粉末”，根据本发明也可以理解为不同金属粉末的混合物，例如不同组合物金属粉末的混合物。根据本发明所使用的金属粉末优选包含颗粒，该颗粒具有至少一种金属(例如基础形态)，和/或至少一种合金。在金属和/或金属化合物上可以优选的是，金属粉末的颗粒重量百分比至少为80％，优选为90％，更为优选的是95％，以至于例如是至少99％或100％。
所使用的金属粉末的颗粒可以例如具有至少一种金属，该金属可以从以下一组金属中选出，这组金属分别是铜、银、金、镍、钯、铂、铝。
所使用的金属粉末的颗粒为代替或添加多种金属可以具有至少一种金属合金。合金可以例如是一种铜-或贵金属化合物。合金优选可以是一种通常使用在硬钎料中的合金。该合金优选包含至少两种金属，这些金属可以从以下一组金属中选出，这组金属分别是铜、银、金、镍、钯、铂、铝。元素组(铜、银、金、镍、钯、铂、铝)中元素成分在合金中的重量百分比为至少90％，优选为至少95％，以至于例如为100％。该合金可以例如是一种由Cu/Ag、Cu/Ag/Au、Cu/Au、Ag/Au、Ag/Pd、Pt/Pd或Ni/Pd构成的合金。在本发明的范畴内，大小范围为0.1-10μm，优选为0.3-3μm的粒子金属粉末或絮片金属粉末被证明尤其适用。
基本上每种可吸热分解的金属化合物都能够作为可在本发明中使用的可吸热分解的金属化合物。作为金属膏体组分进行描述的概念“可吸热分解的金属化合物”，根据本发明也可以理解为不同的可吸热分解的金属化合物的混合物，例如不同组合物的可吸热分解的金属化合物的混合物。根据本发明，可吸热分解的金属化合物应当理解成一种金属化合物，其热分解优选是在惰性气体蒸汽下的一种吸热过程。在这种热分解中，从金属化合物中可以释放出金属。根据优选的实施例，可吸热分解的金属化合物具有一种也包含在金属粉末中的金属。优选地，可吸热分解的金属化合物具有作为金属的铜、银、金、镍、钯或铂。作为可吸热分解的金属化合物优选地可以是用于上述金属的碳酸、乳酸、甲酸、柠檬酸、氧化物或脂肪酸盐(C6至C24-脂肪酸)。根据本发明的可吸热分解的金属化合物例如是碳酸银、乳酸银、甲酸银、柠檬酸银、氧化银(例如Ag2O)、乳酸铜、硬脂酸铜、氧化铜(例如Cu2O或CuO)或氧化金(例如Au2O或AuO)。包含在金属粉末中的可吸热分解的金属化合物具有一个优选400℃以下，更优选350℃以下并且更为优选300℃以下的分解温度。大小范围为0.1-10μm，优选为0.3-3μm的粒子构成的粉末或絮片被证明尤其适用。
根据本发明，在金属膏体中包含一种沸点为220℃以上的溶剂。优选地，该溶剂的沸点为250℃以上。根据一个优选实施例，包含在金属膏体中的沸点为220℃以上的溶剂是一种沸点为220℃以上的可吸热分解的溶剂。根据本发明，可吸热分解的溶剂应优选理解成一种溶剂，该溶剂从金属膏体中剔除是一种吸热的过程。优选的一种情况是，该溶剂可以在通过在此描述的金属膏体进行烧结处理时而未完全化解地，也就是未进行反应地从金属膏体中排除。在本发明的范畴内，概念“沸点220℃以上的溶剂”也可以认定为沸点220℃以上的多种不同溶剂的混合物。沸点220℃以上的溶剂中可以是1-十三醇、2-十三醇、3-十三醇、4-十三醇、5-十三醇、6-十三醇、异十三烷醇、二元酯(例如戊二酸、醋酸或琥珀酸的二甲酸或者以上混合物)、甘油、二甘醇、三甘醇、或者以上混合物。
根据本发明，金属膏体可以放热地凝结金属连接。这将说明，在金属膏体为金属连接进行凝结是一种放热过程。
根据优选实施例，根据本发明的金属膏体可以无需输氧地放热凝结成金属连接部。根据本发明无需输氧意味着，凝结可以在无氧大气环境下进行。根据本发明，无氧大气环境应理解为氧气含量少于1％的大气环境。
另外优选地，金属膏体具有至少50％体积百分比的固体成分。
根据本发明，金属膏体也可以实施成悬胶(体)的形式。在这种情况下优选可以是，除了金属粉末、可吸热分解的金属化合物以及沸点220℃以上的溶剂之外还包含有另一种溶剂。这另一种溶剂可以是一种沸点220℃以下的溶剂。另一种溶剂成分的重量百分比为优选10-50％。金属膏体、可吸热分解的金属化合物及沸点220℃以上的溶剂的重量比例之和在这种情况下优选为50-90％。优选的可以是，在悬胶中相对于金属膏体、可吸热分解的金属化合物及沸点220℃以上的溶剂的重量比例之和(例如为50-90％)，悬胶包含重量百分比为70-90％的上述金属粉末、重量百分比为1-20％的上述可吸热分解的金属化合物及重量百分比为5-20％的上述沸点220℃以上的溶剂。然而也可以优选的是，在悬胶中沸点220℃以上的溶剂的成分更高一些。在这种情况下如有需要可以放弃使用沸点220℃以下的溶剂。根据优选的实施例，悬胶包含重量百分比为35-81％(优选50-70％)的金属粉末、重量百分比为0.5-18％(优选3-15％)的可吸热分解的金属化合物及重量百分比为2.5-47％(优选5-10％)的沸点220℃以上的溶剂、以及重量百分比为0-50％(优选0-20％)的另一种溶剂。
本发明还提出一种方法，用于相互焊接相对的，尤其是相叠的接触面，在该方法中，相叠的接触面通过根据本发明的金属膏体或根据本发明的悬胶彼此连接，并且金属膏体或悬胶放热地凝结。
接触面通过其间设置的金属膏体放热的凝结而进行焊接，根据本发明优选通过低温烧结处理来实现。
待相互焊接的接触面优选是至少两个待焊接的元器件的组成部分。
因此，本发明还涉及一种方法，用于连接至少两个元器件，该元器件通过根据本发明的金属膏体或悬胶彼此连接，并且其中金属膏体或悬胶放热地凝结。待连接的元器件在此相叠地设置。这样的布局也被称为三明治布局。特别的是，这些待连接的元器件没有相邻地设置在一种共用载体上。
相应地，在本发明的范畴内也提出了上述金属膏体的应用，用于连接相叠设置的元器件，相对于一个构件来看优选是三明治布局。
在下文中，概念“金属膏体”处于便于阅读的考虑而可以包括有一种悬胶。
待连接的元器件可以例如是模块和/或基板。
根据一个优选的实施例，根据本发明至少两个模块、至少两个基板或至少一个模块和至少一个基板彼此连接。
模块可以例如是一个LED(发光二极管)、一个印模、一个二极管、一个IGBT(绝缘栅双极晶体管)、一个IC(集成电路)、一个传感器、一个散热体(例如铝质散热体或铜质散热体)或其他的被动元器件(例如一个电阻、电容或线圈)。
基板可以例如是引线框、陶瓷基板或DCB(覆铜)基板。
根据多个优选的实施例，本发明涉及LED与引线框的连接，LED与陶瓷基板的连接，印模、二极管、IGBT和IC中一种模块与引线框、陶瓷基板或DCB基板中一种基板的连接，传感器与引线框或陶瓷基板的连接，DC基板或陶瓷基板与铜质-或铝质散热体的连接，或者引线框与散热体的连接。根据本发明也可以优选三明治结构中的单独元件彼此连接。例如这种三明治结构可以具有一个包括(i)LED或芯片、(ii)引线框和(iii)散热体的结构，其中优选地是，引线框一方面与LED或芯片连接，并且另一方面通过金属膏体与散热体连接。另外，三明治结构可以包括一种结构，在该结构中二极管位于在两个散热体之间，其中优选地是，两个散热体中的每个通过金属膏体与二极管的另一接触面连接。
根据本发明，接触面理解为元器件的这些通过根据本发明的金属膏体进行接触的表面。
待焊接的元器件(优选也就是模块和基板)的各个表面可以包括一种金属层。该金属层可以包含一个相应的接触面或者包含在金属层表面上的接触面。
根据一个优选的实施例，金属层具有至少一种元素，该元素可从以下一组元素中选出，其分别是铜、银、金、钯、铂。金属层也可以由这些元素构成。
再者，金属层具有合金，其包含至少两种元素，该元素可从以下一组元素中选出，其分别是铜、银、金、钯、铂。这些元素在合金中的成分的重量百分比为90％，优选为至少95％，更为优选的是99％，甚至例如到100％。优选地，这样的合金包含至少两种元素，该元素可从以下一组元素中选出，其分别是银、钯、铂。金属层具有该合金，该合金的重量百分比为95％，优选为至少99％，更为优选的是100％。
金属层也可以具有一个多层的结构。例如可以优选的是，待焊接的元器件的至少一个表面包括例如多个层，这些层具有上述元素和/或合金。根据一个优选实施例，元器件(例如DCB基板)的至少一个表面具有一个铜层，在该铜层上设置有一个由镍制成的层。有可能在镍层上还设置有一个由金制成的层。镍层的厚度为优选1-2μm，并且金涂层的厚度为优选0.05-0.3μm。另一方面优选也可以是，元器件的一个表面包括一个由银或金制成的层并且其上还包括一个由钯或铂制成的层。根据另一优选的实施例，各个层除了所述的元素或合金之外也包含有一种玻璃。也可以优选是，多个层是(i)玻璃和(ii)元素或合金构成的混合物。
联系上文例如可以优选的是，LED具有由银制成的金属层或由镍和金构成的涂层，芯片具有由银制成的金属层或由镍和金构成的涂层，引线框具有由铜或银制成的金属层或由镍和金构成的涂层，DCB基板具有由铜或银制成的金属层或由镍和金构成的涂层，陶瓷基板具有由银、金、钯、铂、银-钯合金或银-铂合金制成的金属层，并且散热体具有由铜、银制成的金属层或由镍和金构成的涂层。
在根据本发明的方法的范畴内，待焊接的元器件通过根据本发明的金属膏体彼此连接。
为此首先制造出一种结构，该结构包括两个元器件，这两个元器件通过根据本发明的金属膏体彼此连接。优选这样来进行涂层，即首先将元器件表面涂敷金属膏体并且其他元器件以其表面放置在金属膏体上。
金属膏体可以例如通过传统的方法涂在元器件表面上，例如通过印刷方法(例如丝网印刷或模板印刷)、配比技术、喷涂技术、通过焊脚传递(Pintransfer)或浸泡来实现。
从而，该元器件的涂有金属膏体的表面与待连接的元器件的表面通过金属膏体形成连接。因此，在待焊接的元器件之间具有层状的金属膏体。根据本发明，元器件的对立的通过金属膏体形成接触的表面是两个元器件的接触面。
待焊接的元器件的潮湿层厚度，其在烧结处理之前被测量作为待连接的元器件的对立接触面之间的间距，该间距优选为在20-200μm的范围内。优选的潮湿层厚度关系到所选的涂敷方法。如果金属膏体借助子丝网印刷方法进行涂敷，则潮湿层厚度优选为20-50μm。如果金属膏体通过模板印刷进行涂敷，则优选的潮湿层厚度在50-200μm的范围内。
相应地在低温烧结处理之前要对所获得的结构进行干燥。干燥温度优选为50-100℃。应当理解的是，干燥时间将关系到每种组分及构件大小。另一方面，干燥也可以直接在元器件的至少一个表面涂敷有金属膏体之后且在待连接的元器件进行接触之前进行。
由至少两个元器件构成且通过金属膏体彼此连接的结构，随后进行一种低温烧结处理。由此而实现了所述的金属膏体的放热的凝结。
根据本发明，低温烧结处理应理解成一种烧结处理，该处理过程优选在230-350℃的范围内，更为优选在250-300℃的范围内进行。
在此，处理压力优选在0-200bar的范围内，更为优选为1-50bar。
烧结时间关系到处理压力并且优选为2-45分钟。在处理压力为0-2bar(例如0bar)时，烧结时间优选为2-45分钟；在处理压力为5-15bar(例如10bar)时，烧结时间优选为15-30分钟；在处理压力为40-60bar(例如50bar)时，烧结时间优选为10-20分钟；在处理压力为180-200bar(例如200bar)时，烧结时间优选为2-5分钟。
根据本发明，在待连接的元器件之间的触点的孔隙可以有效地控制。因为元器件对温度、压力和时间具有不同的灵敏度，从而必须通过金属膏体来控制孔隙。
这种控制尤其可以通过在所设金属膏体中的沸点220℃以上的溶剂的成分来实现。
在金属膏体中沸点220℃以上的溶剂的成分越高，在低温烧结处理中放热凝结过程所需的时间则越长。因此，在金属膏体中通过低温烧结处理而从可吸热分解的金属化合物中现场产生的金属需要更多的时间，以便于能够填充所设的金属膏体的金属颗粒之间的空隙。这样就能够得到降低待连接元器件之间的触点孔隙的目的。
另一方面，触点的孔隙通过降低沸点220℃以上的溶剂在金属膏体中的成分也会被提高。
因此，根据本发明使用一种金属膏体来控制在低温烧结处理中待连接的元器件之间触点的孔隙，该金属膏体包括金属粉末、可吸热分解的金属化合物以及沸点220℃以上的溶剂。
优选的，金属膏体是前述金属膏体，其包含70-90％重量百分比的金属粉末、1-20％重量百分比的可吸热分解的金属化合物以及5-20％重量百分比的沸点220℃以上的溶剂。
相应地也提出一种方法，以控制两个元器件之间触点的孔隙，其中包括两个通过金属膏体而彼此连接的元器件的结构要进行低温烧结处理，其特征在于，金属膏体包括金属粉末、可吸热分解的金属化合物以及沸点220℃以上的溶剂，并且沸点220℃以上的溶剂的成分要这样设置，以使得能实现触点所期望的孔隙。
通过所述的方法可以制造一种构件，其包括至少两个相叠(尤其是三明治结构中的)设置的元器件，这些元器件通过放热凝结的金属膏体(上述限定的)彼此连接。因此，根据本发明，构件具有接触面，该接触面通过凝结的金属膏体或悬胶(以上所述的)而连接。
根据本发明，金属膏体或悬胶的金属被凝结，该金属膏体除了作为主要成分的金属粉末之外还包含可吸热分解的金属化合物及可吸热剔除的溶剂，其中凝结最终通过金属化合物的吸热分解来控制。
优选地，在通过对立的金属面借助于连接膏体而产生触点时，膏体在金属化合物分解时放热而转化成一种低孔隙的固体，该连接膏体具有金属颗粒以及一种可分解的金属化合物，该金属选自银、铜、铝、镍和钯。
金属化合物的放热反应可以通过有机溶剂的存在而在时间上进行控制，该有机溶剂的沸点在220℃以上，尤其在250℃以上。
在此，放热反应可以维持10秒到10分钟的时间。
根据本发明而设计，即溶剂在金属化合物分解时被剔除。另一方面也可以在溶剂剔除时进行金属化合物的分解。
因此，根据本发明由此而降低所产生的焊接层或连接层(尤其是基于银或铜的)的孔隙，即在絮片或粉末颗粒之间现场生成的金属，尤其是银或铜来填满空隙。在根据本发明的改进方案中，放热的处理被延长，从而空隙继续被封闭。放热反应在时间上的延迟通过有机的溶剂来生效，该溶剂具有较高的沸点。使用这种溶剂能够控制孔隙。沸点200℃以下的溶剂在此不作考虑。这样的溶剂蒸发过快，以至于放热反应将急速地进行。沸点在220℃以上的溶剂可以将放热反应延长到10秒以上。沸点在250℃以上的溶剂可以将放热反应延长至10分钟。在此，银缓慢的形成与有机组分缓慢的蒸发相辅相成地促使气孔规则地减少并且由此而提高凝结效果。在此根据本发明提出一种金属膏体，其具有：1-20％，尤其是2-10％重量百分比的可吸热分解的金属化合物(尤其是银化合物，例如Ag2CO3)；5-20％重量百分比，尤其是9-20％重量百分比的沸点在220℃以上(尤其在250℃)的溶剂(例如TDA)；0-10％重量百分比的用于银膏体的通用辅料，例如松油醇；以及至少60％银颗粒。
膏体的主要组分是相应的金属(尤其是银或铜的)颗粒，该金属颗粒在特定的使用膏体时将相互焊接成一种紧密的金属结构。在过高的金属颗粒成分中，例如在重量百分比90％以上的银颗粒中，膏体属性将会丧失。在过低的金属颗粒成分中，例如在重量百分比60％以下的银颗粒中，焊接点的孔隙会过大。为了使得金属颗粒，尤其是银颗粒交织成网，在以差热分析(DTA)放热显现处理中使用到可吸热分解的金属化合物，尤其是银化合物。从吸热的金属(尤其是银)化合物中产生的金属(尤其是银)将连接金属(尤其是银或铜)粒子，并且填充金属(尤其是银或铜)粒子之间的空隙。在膏体中吸热金属化合物过少，例如其成本为重量百分比小于1％的银化合物时，会不足以减少焊接层的气孔并且由此而实现的稳固度不能达到根据本发明所要求的质量。在吸热的化合物成分过高时，例如银化合物的成分在重量百分比20％以上时，放热反应仍将难以控制并且会构成危险，即基于一种瞬间快速的反应而使得气孔没能充分填充，或者另一方面反应时间会非正常地持续过长，以至于对于批量生产的处理是非经济的。当高温沸腾的溶剂成分太少时，尤其是少于重量百分比5％时，放热反应过程将未能充分地延长，以至于不能可控地减少气孔。如果相对而言高温沸腾的溶剂作为主要组分，则在足够减少孔隙时将难以剔除该溶剂。
颗粒大小为μm单位的铜、贵金属、镍或铝的絮片及颗粒都适合于作为金属颗粒，并且尤其是像Cu/Ag、Cu/Ag/Au、Cu/Au、Ag/Au、Ag/Pd、Pt/Pd和Ni/Pd所构成的易于相溶的混合物。含银的混合物优选是无镍的。当从金属化合物中释放的金属有效地与颗粒的金属进行相溶时，颗粒与金属化合物所构成的系统是完全适用的。优选地，由金属化合物释放的金属在放热凝结时相溶金属颗粒而不会产生新的相。易于分解的金属化合物在远低于其金属熔点时则适合于作为吸热分解的金属化合物。这种情况适合于贵金属化合物。其中，无论其是否有毒或者其毒性是否是能接受的，都要留意铜化合物。优选地，可分解的金属化合物在高温沸腾的溶剂被剔除时仍在进行分解。使用有机溶剂可以使得分解温度在400℃以下，尤其在350℃以下。对于特别敏感的半导体技术应用，将使用分解温度在300℃以下的金属化合物。在分解温度在300℃以下时通常替换为软焊法。
颗粒在存放时不会凝聚。因此，纳米颗粒通常并非有利，尽管优选是尽可能小的颗粒。0.2-10μm，优选0.3-3μm大小的颗粒，特别是具有较大表面粗糙度的圆柱状颗粒(絮片)被证明是合适的。
根据本发明的放热凝结，相比许多烧结方法能够在保护气体下实施。在与膏体连接时，待连接部件的金属表面在保护气体下不会被氧化。因此，通过膏体可实现有效的焊点。在电子元器件上通过膏体在保护气体下产生的金属层能够无需后续处理地进行连接，尤其是可以粘合。对于根据本发明的放热凝结不需要氧气源。
附图说明
在下文中，本发明将根据附图进行描述。
图1通过一个流程图详细说明了本发明的原理，本发明相对于已知的银膏体的烧结处理而无需银化合物。
图2a-d示出了高温沸腾的溶剂在放热凝结峰值区域上的影响。
具体实施方式
图1示出了凝结过程，其中银和碳酸银被混合并且通过溶剂处理成膏体。设置在膏体的银颗粒之中的碳酸盐在250℃无压力的情况下被分解成银和CO2，其中被反应出的银填充银颗粒之间的空隙并且固定银颗粒。通过这种方式，银连接产生很少的孔隙。相应地，银被固定到基板表面上。相对于已知的、在焊接技术中产生具有大约17Vol.％孔隙的银体来看，根据本发明的孔隙被限制在10Vol.％。
根据图2a-d，放热凝结的持续时间将通过膏体中高温沸腾的溶剂成分进行控制。放热凝结的放缓将促使少孔的焊点进一步具有良好的机械、导电及导热性能。
由重量百分比78％的银、重量百分比5％的碳酸银及重量百分比17％的松油醇(沸点为219℃)构成的膏体在保护气体下进行的差热分析中(图2a)显示出吸热峰值在200℃。该膏体对于机械性能来说不会凝聚成不可负重的多孔堆。
由重量百分比83％的银、重量百分比5％的碳酸银及重量百分比12％的松油醇(沸点为219℃)构成的膏体在保护气体下进行的差热分析中(图2b)显示出在吸热峰值后在200℃的放热峰值。该膏体对于机械性能来说也不会凝聚成不可负重的多孔堆。
由重量百分比83％的银、重量百分比5％的碳酸银、重量百分比10％的松油醇(沸点为219℃)及重量百分比2％的1-十三醇(十三(烷)醇：TDA沸点为274-280℃)构成的膏体在保护气体下进行的差热分析中(图2c)相对于(图2b)进行置换并且压缩的峰值在200℃。该膏体对于机械性能来说也不会凝聚成不可负重的多孔堆。
由重量百分比83％的银、重量百分比5％的碳酸银、重量百分比12％的1-十三醇(TDA沸点为274-280℃)构成的膏体在保护气体下进行的差热分析中(图2d)将导致200℃以下的放热峰值。膏体在此会凝聚为机械性能坚固且少孔的堆体。该堆体能够承受在功率电子领域中的机械及热的应变载荷，尤其是LED附上、连接非常小的4×4mm的芯片时。孔隙可以通过在膏体中高温沸腾的溶剂量的变化进行控制，并且为此而可以对一些特殊的应用进行设置。
本发明将通过以下实施例进行诠释：
实施例1：
包含重量百分比83％的银、重量百分比5％的碳酸银、重量百分比12％的1-十三醇的金属膏体通过配比技术印刷在引线框表面。接下来，面积8mm2的印模安置在金属膏体上。潮湿层厚度为50μm。随后，所获得的结构在100℃下经过20分钟进行干燥。烧结过程在0bar的处理压力下且处理温度为250℃持续进行45分钟。
实施例2
包含重量百分比83％的银、重量百分比5％的碳酸银、重量百分比12％的1-十三醇的金属膏体通过配比技术涂敷在引线框表面。接下来，面积9.2mm2的印模安置在金属膏体上。潮湿层厚度为50μm。随后，所获得的结构在100℃下经过20分钟进行干燥。烧结过程在0bar的处理压力下且处理温度为250℃持续进行45分钟。

Claims (10)

1.一种金属膏体，其包含重量百分比70-90％的金属粉末、重量百分比1-20％的可吸热分解的金属化合物以及重量百分比5-20％的沸点220℃以上的溶剂，其中，所述金属膏体可放热地凝结成金属连接部。
2.根据权利要求1所述的金属膏体，其特征在于，所述金属膏体包含重量百分比为11-20％的沸点220℃以上的溶剂。
3.根据权利要求1或2所述的金属膏体，其特征在于，所述可吸热分解的金属化合物是一种铜-或贵金属化合物。
4.根据权利要求1-3中任一项所述的金属膏体，其特征在于，所述金属粉末大多数具有银或铜或金或钯或铂。
5.根据权利要求1-4中任一项所述的金属膏体，其特征在于，所述金属膏体能够无需提供氧气地放热凝结成所述金属连接部。
6.根据权利要求1-5中任一项所述的金属膏体，其特征在于，所述金属膏体为悬胶(体)的形式。
7.一种方法，用于相互焊接相对的接触面，其特征在于，所述接触面通过根据权利要求1-6中任一项所述的金属膏体相互连接，并且所述金属膏体放热地凝结。
8.根据权利要求7所述的方法，其特征在于，包含在所述金属膏体中的溶剂的沸点为250℃以上。
9.根据权利要求8所述的方法，其特征在于，包含在所述金属膏体中的所述金属化合物的分解温度为400℃以下，优选为350℃以下，特别优选为300℃以下。
10.一种构件，其具有多个相叠设置的元器件，所述这些元器件通过根据权利要求1-6中任一项所述的金属膏体连接。
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