CN102333904B - 溅射压电材料 - Google Patents

溅射压电材料 Download PDF

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Publication number
CN102333904B
CN102333904B CN2010800093928A CN201080009392A CN102333904B CN 102333904 B CN102333904 B CN 102333904B CN 2010800093928 A CN2010800093928 A CN 2010800093928A CN 201080009392 A CN201080009392 A CN 201080009392A CN 102333904 B CN102333904 B CN 102333904B
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CN
China
Prior art keywords
piezoelectric
piezoelectric material
seed layer
layer
chamber
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CN2010800093928A
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English (en)
Chinese (zh)
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CN102333904A (zh
Inventor
李有明
杰弗里·比克迈尔
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Fujifilm Corp
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Fujifilm Corp
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Publication of CN102333904A publication Critical patent/CN102333904A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14201—Structure of print heads with piezoelectric elements
    • B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1607—Production of print heads with piezoelectric elements
    • B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Micromachines (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
CN2010800093928A 2009-02-26 2010-02-23 溅射压电材料 Active CN102333904B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/393,644 2009-02-26
US12/393,644 US8164234B2 (en) 2009-02-26 2009-02-26 Sputtered piezoelectric material
PCT/US2010/025012 WO2010099091A1 (en) 2009-02-26 2010-02-23 Sputtered piezoelectric material

Publications (2)

Publication Number Publication Date
CN102333904A CN102333904A (zh) 2012-01-25
CN102333904B true CN102333904B (zh) 2013-08-07

Family

ID=42630346

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800093928A Active CN102333904B (zh) 2009-02-26 2010-02-23 溅射压电材料

Country Status (6)

Country Link
US (2) US8164234B2 (enExample)
EP (1) EP2401414B1 (enExample)
JP (1) JP2012519378A (enExample)
KR (1) KR101312485B1 (enExample)
CN (1) CN102333904B (enExample)
WO (1) WO2010099091A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9441769B2 (en) 2009-02-20 2016-09-13 Swagelok Company Method of assembling conduit fitting with attached torque collar
JP5399970B2 (ja) * 2010-03-31 2014-01-29 パナソニック株式会社 強誘電体デバイスの製造方法
FR2976126B1 (fr) * 2011-06-01 2014-05-09 Commissariat Energie Atomique Composant electrique comprenant un materiau de structure perovskite et des electrodes optimisees et procede de fabrication
US10266936B2 (en) 2011-10-17 2019-04-23 The United States Of America As Represented By The Secretary Of The Army Process for making lead zirconate titanate (PZT) layers and/or platinum electrodes and products thereof
CN104245324B (zh) * 2012-07-25 2016-10-12 惠普发展公司，有限责任合伙企业 压电致动器和制造压电致动器的方法
WO2014021850A1 (en) * 2012-07-31 2014-02-06 Hewlett-Packard Development Company, L.P. Thin film stack
JP2015065430A (ja) * 2013-08-27 2015-04-09 三菱マテリアル株式会社 ＰＮｂＺＴ薄膜の製造方法
JP6519735B2 (ja) * 2014-03-24 2019-05-29 セイコーエプソン株式会社 圧電素子及び圧電素子応用デバイス
KR101865347B1 (ko) * 2016-06-10 2018-06-07 주식회사 모다이노칩 음향 출력 장치
WO2017213415A1 (ko) * 2016-06-10 2017-12-14 주식회사 모다이노칩 음향 출력 장치
JP7193334B2 (ja) * 2018-12-19 2022-12-20 エスアイアイ・プリンテック株式会社 ヘッドチップ、液体噴射ヘッド、液体噴射記録装置およびヘッドチップの製造方法
CN112853286A (zh) 2019-11-12 2021-05-28 应用材料公司 压电膜的物理气相沉积
JP7667052B2 (ja) 2021-09-27 2025-04-22 富士フイルム株式会社 圧電積層体及び圧電素子
JP7667051B2 (ja) * 2021-09-27 2025-04-22 富士フイルム株式会社 圧電積層体及び圧電素子
US12550616B2 (en) * 2022-08-17 2026-02-10 Fujifilm Dimatix, Inc. Process of epitaxial grown PZT film and method of making a PZT device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040004237A1 (en) * 2002-07-03 2004-01-08 Glen Fox Method for producing crystallographically textured electrodes for textured PZT capacitors
CN1661827A (zh) * 2004-01-27 2005-08-31 松下电器产业株式会社 压电元件及其制造方法、以及喷墨头和喷墨式记录装置
US20080074471A1 (en) * 2006-09-15 2008-03-27 Fujifilm Corporation Perovskite oxide, process for producing the perovskite oxide, piezoelectric body, piezoelectric device, and liquid discharge device
US7456548B2 (en) * 2006-05-09 2008-11-25 Canon Kabushiki Kaisha Piezoelectric element, piezoelectric actuator, and ink jet recording head

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH068509B2 (ja) * 1985-09-17 1994-02-02 勝 岡田 強誘電体薄膜の製造方法
JPH04285025A (ja) * 1991-03-14 1992-10-09 Toshiba Corp 圧電単結晶の単一分域化方法
JP3047316B2 (ja) * 1994-11-11 2000-05-29 富士ゼロックス株式会社 エピタキシャル強誘電体薄膜素子およびその作製方法
US6502928B1 (en) * 1998-07-29 2003-01-07 Seiko Epson Corporation Ink jet recording head and ink jet recording apparatus comprising the same
US6576546B2 (en) * 1999-12-22 2003-06-10 Texas Instruments Incorporated Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications
JP4182329B2 (ja) * 2001-09-28 2008-11-19 セイコーエプソン株式会社 圧電体薄膜素子およびその製造方法、ならびにこれを用いた液体吐出ヘッド及び液体吐出装置
DE10231471A1 (de) * 2001-09-29 2003-06-26 Ceramtec Ag Piezokeramische Werkstoffe auf der Basis von Blei-Zirkonat-Titanat (PZT) mit valenzkompensierten Ag-haltigen Komplexen
KR101137643B1 (ko) * 2003-10-10 2012-04-19 후지필름 디마틱스, 인크. 박막을 구비한 프린트 헤드
JP2005209912A (ja) * 2004-01-23 2005-08-04 Seiko Epson Corp 圧電素子及び液体噴射ヘッド並びに圧電素子の製造方法
US7399067B2 (en) * 2004-02-27 2008-07-15 Canon Kabushiki Kaisha Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and ink jet recording head
JP4709544B2 (ja) * 2004-05-31 2011-06-22 セイコーエプソン株式会社 前駆体組成物、前駆体組成物の製造方法、強誘電体膜の製造方法、圧電素子、半導体装置、圧電アクチュエータ、インクジェット式記録ヘッド、およびインクジェットプリンタ
JP4431891B2 (ja) * 2004-12-28 2010-03-17 セイコーエプソン株式会社 圧電素子、圧電アクチュエーター、圧電ポンプ、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、薄膜圧電共振子、周波数フィルタ、発振器、電子回路、および電子機器
JP4091641B2 (ja) * 2006-04-07 2008-05-28 富士フイルム株式会社 圧電素子とその製造方法、及びインクジェット式記録ヘッド
JP2007314368A (ja) * 2006-05-25 2007-12-06 Fujifilm Corp ペロブスカイト型酸化物、強誘電素子、圧電アクチュエータ、及び液体吐出装置
JP5251031B2 (ja) * 2006-09-08 2013-07-31 セイコーエプソン株式会社 圧電素子、液体噴射ヘッド、液体噴射装置、センサー
JP5290551B2 (ja) * 2006-09-15 2013-09-18 富士フイルム株式会社 ペロブスカイト型酸化物とその製造方法、圧電体、圧電素子、液体吐出装置
JP5367242B2 (ja) * 2007-03-22 2013-12-11 富士フイルム株式会社 強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置
EP1973177B8 (en) * 2007-03-22 2015-01-21 FUJIFILM Corporation Ferroelectric film, process for producing the same, ferroelectric device, and liquid discharge device
JP2009152235A (ja) * 2007-12-18 2009-07-09 Panasonic Corp 強誘電体積層構造及びその製造方法、電界効果トランジスタ及びその製造方法、並びに強誘電体キャパシタ及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040004237A1 (en) * 2002-07-03 2004-01-08 Glen Fox Method for producing crystallographically textured electrodes for textured PZT capacitors
CN1661827A (zh) * 2004-01-27 2005-08-31 松下电器产业株式会社 压电元件及其制造方法、以及喷墨头和喷墨式记录装置
US7456548B2 (en) * 2006-05-09 2008-11-25 Canon Kabushiki Kaisha Piezoelectric element, piezoelectric actuator, and ink jet recording head
US20080074471A1 (en) * 2006-09-15 2008-03-27 Fujifilm Corporation Perovskite oxide, process for producing the perovskite oxide, piezoelectric body, piezoelectric device, and liquid discharge device

Also Published As

Publication number Publication date
EP2401414B1 (en) 2020-06-03
EP2401414A4 (en) 2013-10-09
CN102333904A (zh) 2012-01-25
EP2401414A1 (en) 2012-01-04
JP2012519378A (ja) 2012-08-23
US8164234B2 (en) 2012-04-24
US20120177815A1 (en) 2012-07-12
WO2010099091A1 (en) 2010-09-02
KR20110120342A (ko) 2011-11-03
KR101312485B1 (ko) 2013-10-01
US20100213795A1 (en) 2010-08-26

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