KR101312485B1 - 스퍼터링된 압전 재료 - Google Patents

스퍼터링된 압전 재료 Download PDF

Info

Publication number
KR101312485B1
KR101312485B1 KR1020117022188A KR20117022188A KR101312485B1 KR 101312485 B1 KR101312485 B1 KR 101312485B1 KR 1020117022188 A KR1020117022188 A KR 1020117022188A KR 20117022188 A KR20117022188 A KR 20117022188A KR 101312485 B1 KR101312485 B1 KR 101312485B1
Authority
KR
South Korea
Prior art keywords
piezoelectric material
piezoelectric
seed layer
layer
crystal orientation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020117022188A
Other languages
English (en)
Korean (ko)
Other versions
KR20110120342A (ko
Inventor
요우밍 리
제프리 버크마이어
Original Assignee
후지필름 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지필름 가부시키가이샤 filed Critical 후지필름 가부시키가이샤
Publication of KR20110120342A publication Critical patent/KR20110120342A/ko
Application granted granted Critical
Publication of KR101312485B1 publication Critical patent/KR101312485B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14201—Structure of print heads with piezoelectric elements
    • B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1607—Production of print heads with piezoelectric elements
    • B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Micromachines (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
KR1020117022188A 2009-02-26 2010-02-23 스퍼터링된 압전 재료 Expired - Fee Related KR101312485B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/393,644 2009-02-26
US12/393,644 US8164234B2 (en) 2009-02-26 2009-02-26 Sputtered piezoelectric material
PCT/US2010/025012 WO2010099091A1 (en) 2009-02-26 2010-02-23 Sputtered piezoelectric material

Publications (2)

Publication Number Publication Date
KR20110120342A KR20110120342A (ko) 2011-11-03
KR101312485B1 true KR101312485B1 (ko) 2013-10-01

Family

ID=42630346

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117022188A Expired - Fee Related KR101312485B1 (ko) 2009-02-26 2010-02-23 스퍼터링된 압전 재료

Country Status (6)

Country Link
US (2) US8164234B2 (enExample)
EP (1) EP2401414B1 (enExample)
JP (1) JP2012519378A (enExample)
KR (1) KR101312485B1 (enExample)
CN (1) CN102333904B (enExample)
WO (1) WO2010099091A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9441769B2 (en) 2009-02-20 2016-09-13 Swagelok Company Method of assembling conduit fitting with attached torque collar
JP5399970B2 (ja) * 2010-03-31 2014-01-29 パナソニック株式会社 強誘電体デバイスの製造方法
FR2976126B1 (fr) * 2011-06-01 2014-05-09 Commissariat Energie Atomique Composant electrique comprenant un materiau de structure perovskite et des electrodes optimisees et procede de fabrication
US10266936B2 (en) 2011-10-17 2019-04-23 The United States Of America As Represented By The Secretary Of The Army Process for making lead zirconate titanate (PZT) layers and/or platinum electrodes and products thereof
CN104245324B (zh) * 2012-07-25 2016-10-12 惠普发展公司，有限责任合伙企业 压电致动器和制造压电致动器的方法
WO2014021850A1 (en) * 2012-07-31 2014-02-06 Hewlett-Packard Development Company, L.P. Thin film stack
JP2015065430A (ja) * 2013-08-27 2015-04-09 三菱マテリアル株式会社 ＰＮｂＺＴ薄膜の製造方法
JP6519735B2 (ja) * 2014-03-24 2019-05-29 セイコーエプソン株式会社 圧電素子及び圧電素子応用デバイス
KR101865347B1 (ko) * 2016-06-10 2018-06-07 주식회사 모다이노칩 음향 출력 장치
WO2017213415A1 (ko) * 2016-06-10 2017-12-14 주식회사 모다이노칩 음향 출력 장치
JP7193334B2 (ja) * 2018-12-19 2022-12-20 エスアイアイ・プリンテック株式会社 ヘッドチップ、液体噴射ヘッド、液体噴射記録装置およびヘッドチップの製造方法
CN112853286A (zh) 2019-11-12 2021-05-28 应用材料公司 压电膜的物理气相沉积
JP7667052B2 (ja) 2021-09-27 2025-04-22 富士フイルム株式会社 圧電積層体及び圧電素子
JP7667051B2 (ja) * 2021-09-27 2025-04-22 富士フイルム株式会社 圧電積層体及び圧電素子
US12550616B2 (en) * 2022-08-17 2026-02-10 Fujifilm Dimatix, Inc. Process of epitaxial grown PZT film and method of making a PZT device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070262678A1 (en) 2006-05-09 2007-11-15 Canon Kabushiki Kaisha Piezoelectric element, piezoelectric actuator, and ink jet recording head
US20080074471A1 (en) 2006-09-15 2008-03-27 Fujifilm Corporation Perovskite oxide, process for producing the perovskite oxide, piezoelectric body, piezoelectric device, and liquid discharge device

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH068509B2 (ja) * 1985-09-17 1994-02-02 勝 岡田 強誘電体薄膜の製造方法
JPH04285025A (ja) * 1991-03-14 1992-10-09 Toshiba Corp 圧電単結晶の単一分域化方法
JP3047316B2 (ja) * 1994-11-11 2000-05-29 富士ゼロックス株式会社 エピタキシャル強誘電体薄膜素子およびその作製方法
US6502928B1 (en) * 1998-07-29 2003-01-07 Seiko Epson Corporation Ink jet recording head and ink jet recording apparatus comprising the same
US6576546B2 (en) * 1999-12-22 2003-06-10 Texas Instruments Incorporated Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications
JP4182329B2 (ja) * 2001-09-28 2008-11-19 セイコーエプソン株式会社 圧電体薄膜素子およびその製造方法、ならびにこれを用いた液体吐出ヘッド及び液体吐出装置
DE10231471A1 (de) * 2001-09-29 2003-06-26 Ceramtec Ag Piezokeramische Werkstoffe auf der Basis von Blei-Zirkonat-Titanat (PZT) mit valenzkompensierten Ag-haltigen Komplexen
US6728093B2 (en) * 2002-07-03 2004-04-27 Ramtron International Corporation Method for producing crystallographically textured electrodes for textured PZT capacitors
KR101137643B1 (ko) * 2003-10-10 2012-04-19 후지필름 디마틱스, 인크. 박막을 구비한 프린트 헤드
JP2005209912A (ja) * 2004-01-23 2005-08-04 Seiko Epson Corp 圧電素子及び液体噴射ヘッド並びに圧電素子の製造方法
EP1560279B1 (en) * 2004-01-27 2007-08-22 Matsushita Electric Industrial Co., Ltd. Piezoelectric element and method for manufacturing the same, and ink jet head and ink jet recording apparatus using the piezoelectric element
US7399067B2 (en) * 2004-02-27 2008-07-15 Canon Kabushiki Kaisha Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and ink jet recording head
JP4709544B2 (ja) * 2004-05-31 2011-06-22 セイコーエプソン株式会社 前駆体組成物、前駆体組成物の製造方法、強誘電体膜の製造方法、圧電素子、半導体装置、圧電アクチュエータ、インクジェット式記録ヘッド、およびインクジェットプリンタ
JP4431891B2 (ja) * 2004-12-28 2010-03-17 セイコーエプソン株式会社 圧電素子、圧電アクチュエーター、圧電ポンプ、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、薄膜圧電共振子、周波数フィルタ、発振器、電子回路、および電子機器
JP4091641B2 (ja) * 2006-04-07 2008-05-28 富士フイルム株式会社 圧電素子とその製造方法、及びインクジェット式記録ヘッド
JP2007314368A (ja) * 2006-05-25 2007-12-06 Fujifilm Corp ペロブスカイト型酸化物、強誘電素子、圧電アクチュエータ、及び液体吐出装置
JP5251031B2 (ja) * 2006-09-08 2013-07-31 セイコーエプソン株式会社 圧電素子、液体噴射ヘッド、液体噴射装置、センサー
JP5290551B2 (ja) * 2006-09-15 2013-09-18 富士フイルム株式会社 ペロブスカイト型酸化物とその製造方法、圧電体、圧電素子、液体吐出装置
JP5367242B2 (ja) * 2007-03-22 2013-12-11 富士フイルム株式会社 強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置
EP1973177B8 (en) * 2007-03-22 2015-01-21 FUJIFILM Corporation Ferroelectric film, process for producing the same, ferroelectric device, and liquid discharge device
JP2009152235A (ja) * 2007-12-18 2009-07-09 Panasonic Corp 強誘電体積層構造及びその製造方法、電界効果トランジスタ及びその製造方法、並びに強誘電体キャパシタ及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070262678A1 (en) 2006-05-09 2007-11-15 Canon Kabushiki Kaisha Piezoelectric element, piezoelectric actuator, and ink jet recording head
US7456548B2 (en) * 2006-05-09 2008-11-25 Canon Kabushiki Kaisha Piezoelectric element, piezoelectric actuator, and ink jet recording head
US20080074471A1 (en) 2006-09-15 2008-03-27 Fujifilm Corporation Perovskite oxide, process for producing the perovskite oxide, piezoelectric body, piezoelectric device, and liquid discharge device

Also Published As

Publication number Publication date
EP2401414B1 (en) 2020-06-03
EP2401414A4 (en) 2013-10-09
CN102333904A (zh) 2012-01-25
EP2401414A1 (en) 2012-01-04
JP2012519378A (ja) 2012-08-23
US8164234B2 (en) 2012-04-24
CN102333904B (zh) 2013-08-07
US20120177815A1 (en) 2012-07-12
WO2010099091A1 (en) 2010-09-02
KR20110120342A (ko) 2011-11-03
US20100213795A1 (en) 2010-08-26

Similar Documents

Publication Publication Date Title
KR20110120342A (ko) 스퍼터링된 압전 재료
JP5836754B2 (ja) 圧電体素子及びその製造方法
JP5836755B2 (ja) 圧電体素子及び液体吐出ヘッド
CN112928200B (zh) 一种锆钛酸铅压电薄膜及其制备方法与应用
JP5790759B2 (ja) 強誘電体薄膜およびその製造方法
TWI683461B (zh) 壓電薄膜元件
TWI699439B (zh) 壓電薄膜元件
WO2024202319A1 (ja) 圧電積層体、圧電積層体の製造方法、及び圧電素子
JP4998652B2 (ja) 強誘電体薄膜、強誘電体薄膜の製造方法、圧電体素子の製造方法
CN106463608B (zh) Pzt薄膜层叠体和pzt薄膜层叠体的制造方法
WO2021096884A1 (en) Fabrication of piezoelectric device with pmnpt layer
Sakata et al. Sputtered high| d/sub 31/| coefficient PZT thin film for microactuators
US20260052905A1 (en) Process of epitaxial grown pzt film and method of making a pzt device
WO2022070521A1 (ja) 圧電膜付き基板及び圧電素子
WO2025005883A1 (en) An electromechanical responsive film
WO2024202318A1 (ja) 圧電積層体、圧電積層体の製造方法、及び圧電素子
CN119403138A (zh) 半导体结构及其制备方法、芯片
JPWO2011062050A1 (ja) 圧電体薄膜の製造方法、圧電体薄膜及び圧電体素子

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20160818

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20170823

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20180904

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20250924

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

H13 Ip right lapsed

Free format text: ST27 STATUS EVENT CODE: N-4-6-H10-H13-OTH-PC1903 (AS PROVIDED BY THE NATIONAL OFFICE); TERMINATION CATEGORY : DEFAULT_OF_REGISTRATION_FEE

Effective date: 20250924

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20250924