CN102301455A - 包含形成图案的结构区域的化学机械平坦化垫 - Google Patents

包含形成图案的结构区域的化学机械平坦化垫 Download PDF

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Publication number
CN102301455A
CN102301455A CN2010800057226A CN201080005722A CN102301455A CN 102301455 A CN102301455 A CN 102301455A CN 2010800057226 A CN2010800057226 A CN 2010800057226A CN 201080005722 A CN201080005722 A CN 201080005722A CN 102301455 A CN102301455 A CN 102301455A
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CN
China
Prior art keywords
region
pad
chemical mechanical
mechanical planarization
continuous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800057226A
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English (en)
Chinese (zh)
Inventor
保罗·莱弗瑞
阿努波·马修
斯科特·欣·乔
吴光伟
大卫·亚当·韦尔斯
奥斯卡·K·苏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innopad Inc
Original Assignee
Innopad Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innopad Inc filed Critical Innopad Inc
Publication of CN102301455A publication Critical patent/CN102301455A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2010800057226A 2009-01-27 2010-01-27 包含形成图案的结构区域的化学机械平坦化垫 Pending CN102301455A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14755109P 2009-01-27 2009-01-27
US61/147,551 2009-01-27
PCT/US2010/022189 WO2010088246A1 (en) 2009-01-27 2010-01-27 Chemical-mechanical planarization pad including patterned structural domains

Publications (1)

Publication Number Publication Date
CN102301455A true CN102301455A (zh) 2011-12-28

Family

ID=42395974

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800057226A Pending CN102301455A (zh) 2009-01-27 2010-01-27 包含形成图案的结构区域的化学机械平坦化垫

Country Status (8)

Country Link
US (2) US8435099B2 (enExample)
EP (1) EP2382651A4 (enExample)
JP (1) JP5543494B2 (enExample)
KR (1) KR101587808B1 (enExample)
CN (1) CN102301455A (enExample)
SG (1) SG173452A1 (enExample)
TW (1) TWI517230B (enExample)
WO (1) WO2010088246A1 (enExample)

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CN103522165A (zh) * 2012-06-29 2014-01-22 三岛光产株式会社 研磨垫成型模具的制造方法、研磨垫成型模具及研磨垫
CN103753382A (zh) * 2014-01-06 2014-04-30 成都时代立夫科技有限公司 一种抛光垫及其制备方法
CN113442057A (zh) * 2020-03-25 2021-09-28 罗门哈斯电子材料Cmp控股股份有限公司 带有具有设计的开放空隙空间的突起结构的cmp抛光垫
CN115816291A (zh) * 2022-12-09 2023-03-21 万华化学集团电子材料有限公司 一种具有改善边缘效应的化学机械抛光垫、制备方法及其应用

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JP6067481B2 (ja) * 2013-05-23 2017-01-25 株式会社東芝 研磨パッド、研磨方法、および研磨パッドの製造方法
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
TWI548481B (zh) * 2014-11-17 2016-09-11 三芳化學工業股份有限公司 拋光墊及其製造方法
KR20230169424A (ko) 2015-10-30 2023-12-15 어플라이드 머티어리얼스, 인코포레이티드 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
US11813712B2 (en) 2019-12-20 2023-11-14 Applied Materials, Inc. Polishing pads having selectively arranged porosity
US11806829B2 (en) 2020-06-19 2023-11-07 Applied Materials, Inc. Advanced polishing pads and related polishing pad manufacturing methods
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ

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US20080085661A1 (en) * 2006-07-19 2008-04-10 Innopad, Inc. Polishing Pad Having Micro-Grooves On The Pad Surface
US20080318505A1 (en) * 2004-11-29 2008-12-25 Rajeev Bajaj Chemical mechanical planarization pad and method of use thereof
US20090011679A1 (en) * 2007-04-06 2009-01-08 Rajeev Bajaj Method of removal profile modulation in cmp pads

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JPH0811050A (ja) * 1994-06-28 1996-01-16 Sony Corp 研磨布及びこれを用いた半導体装置の製造方法
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US5533923A (en) * 1995-04-10 1996-07-09 Applied Materials, Inc. Chemical-mechanical polishing pad providing polishing unformity
JPH0922886A (ja) * 1995-07-06 1997-01-21 Disco Abrasive Syst Ltd 複合研磨布
US5888121A (en) 1997-09-23 1999-03-30 Lsi Logic Corporation Controlling groove dimensions for enhanced slurry flow
KR19990081117A (ko) * 1998-04-25 1999-11-15 윤종용 씨엠피 패드 컨디셔닝 디스크 및 컨디셔너, 그 디스크의 제조방법, 재생방법 및 세정방법
WO2001015861A1 (en) * 1999-08-27 2001-03-08 Asahi Kasei Kabushiki Kaisha Polishing pad and polisher
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JP2001315056A (ja) * 1999-12-22 2001-11-13 Toray Ind Inc 研磨用パッドおよびそれを用いた研磨装置及び研磨方法
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US20070015448A1 (en) * 2003-08-07 2007-01-18 Ppg Industries Ohio, Inc. Polishing pad having edge surface treatment
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JP3769581B1 (ja) * 2005-05-18 2006-04-26 東洋ゴム工業株式会社 研磨パッドおよびその製造方法
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US6168508B1 (en) * 1997-08-25 2001-01-02 Lsi Logic Corporation Polishing pad surface for improved process control
US20080318505A1 (en) * 2004-11-29 2008-12-25 Rajeev Bajaj Chemical mechanical planarization pad and method of use thereof
US20080085661A1 (en) * 2006-07-19 2008-04-10 Innopad, Inc. Polishing Pad Having Micro-Grooves On The Pad Surface
US20090011679A1 (en) * 2007-04-06 2009-01-08 Rajeev Bajaj Method of removal profile modulation in cmp pads

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103522165A (zh) * 2012-06-29 2014-01-22 三岛光产株式会社 研磨垫成型模具的制造方法、研磨垫成型模具及研磨垫
CN103522165B (zh) * 2012-06-29 2016-12-28 三岛光产株式会社 研磨垫成型模具的制造方法、研磨垫成型模具及研磨垫
CN103753382A (zh) * 2014-01-06 2014-04-30 成都时代立夫科技有限公司 一种抛光垫及其制备方法
CN103753382B (zh) * 2014-01-06 2016-04-27 成都时代立夫科技有限公司 一种抛光垫及其制备方法
CN113442057A (zh) * 2020-03-25 2021-09-28 罗门哈斯电子材料Cmp控股股份有限公司 带有具有设计的开放空隙空间的突起结构的cmp抛光垫
CN113442057B (zh) * 2020-03-25 2023-12-15 罗门哈斯电子材料Cmp控股股份有限公司 带有具有设计的开放空隙空间的突起结构的cmp抛光垫
CN115816291A (zh) * 2022-12-09 2023-03-21 万华化学集团电子材料有限公司 一种具有改善边缘效应的化学机械抛光垫、制备方法及其应用

Also Published As

Publication number Publication date
US20130244548A1 (en) 2013-09-19
SG173452A1 (en) 2011-09-29
KR20110124227A (ko) 2011-11-16
KR101587808B1 (ko) 2016-01-22
US9162341B2 (en) 2015-10-20
TW201034792A (en) 2010-10-01
TWI517230B (zh) 2016-01-11
EP2382651A4 (en) 2013-01-16
US8435099B2 (en) 2013-05-07
JP2012516247A (ja) 2012-07-19
JP5543494B2 (ja) 2014-07-09
US20100221985A1 (en) 2010-09-02
WO2010088246A1 (en) 2010-08-05
EP2382651A1 (en) 2011-11-02

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Application publication date: 20111228

RJ01 Rejection of invention patent application after publication