KR101587808B1 - 패턴화된 구조적 도메인들을 포함하는 화학-기계적 평탄화 패드 - Google Patents

패턴화된 구조적 도메인들을 포함하는 화학-기계적 평탄화 패드 Download PDF

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KR101587808B1
KR101587808B1 KR1020117018544A KR20117018544A KR101587808B1 KR 101587808 B1 KR101587808 B1 KR 101587808B1 KR 1020117018544 A KR1020117018544 A KR 1020117018544A KR 20117018544 A KR20117018544 A KR 20117018544A KR 101587808 B1 KR101587808 B1 KR 101587808B1
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KR20110124227A (ko
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폴 리페브레
아눕 매튜
스캇 씬 치아오
광웨이 우
데이비드 애덤 웰스
오스카 케이. 슈
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에프엔에스테크 주식회사
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020117018544A 2009-01-27 2010-01-27 패턴화된 구조적 도메인들을 포함하는 화학-기계적 평탄화 패드 Active KR101587808B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14755109P 2009-01-27 2009-01-27
US61/147,551 2009-01-27

Publications (2)

Publication Number Publication Date
KR20110124227A KR20110124227A (ko) 2011-11-16
KR101587808B1 true KR101587808B1 (ko) 2016-01-22

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KR1020117018544A Active KR101587808B1 (ko) 2009-01-27 2010-01-27 패턴화된 구조적 도메인들을 포함하는 화학-기계적 평탄화 패드

Country Status (8)

Country Link
US (2) US8435099B2 (enExample)
EP (1) EP2382651A4 (enExample)
JP (1) JP5543494B2 (enExample)
KR (1) KR101587808B1 (enExample)
CN (1) CN102301455A (enExample)
SG (1) SG173452A1 (enExample)
TW (1) TWI517230B (enExample)
WO (1) WO2010088246A1 (enExample)

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JP6067481B2 (ja) * 2013-05-23 2017-01-25 株式会社東芝 研磨パッド、研磨方法、および研磨パッドの製造方法
CN103753382B (zh) * 2014-01-06 2016-04-27 成都时代立夫科技有限公司 一种抛光垫及其制备方法
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
TWI548481B (zh) * 2014-11-17 2016-09-11 三芳化學工業股份有限公司 拋光墊及其製造方法
KR20230169424A (ko) 2015-10-30 2023-12-15 어플라이드 머티어리얼스, 인코포레이티드 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
US11813712B2 (en) 2019-12-20 2023-11-14 Applied Materials, Inc. Polishing pads having selectively arranged porosity
US20210299816A1 (en) * 2020-03-25 2021-09-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp polishing pad with protruding structures having engineered open void space
US11806829B2 (en) 2020-06-19 2023-11-07 Applied Materials, Inc. Advanced polishing pads and related polishing pad manufacturing methods
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN115816291A (zh) * 2022-12-09 2023-03-21 万华化学集团电子材料有限公司 一种具有改善边缘效应的化学机械抛光垫、制备方法及其应用

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JP2006140240A (ja) * 2004-11-11 2006-06-01 Renesas Technology Corp 研磨パッド、研磨装置及び半導体装置の製造方法

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Publication number Publication date
US20130244548A1 (en) 2013-09-19
CN102301455A (zh) 2011-12-28
SG173452A1 (en) 2011-09-29
KR20110124227A (ko) 2011-11-16
US9162341B2 (en) 2015-10-20
TW201034792A (en) 2010-10-01
TWI517230B (zh) 2016-01-11
EP2382651A4 (en) 2013-01-16
US8435099B2 (en) 2013-05-07
JP2012516247A (ja) 2012-07-19
JP5543494B2 (ja) 2014-07-09
US20100221985A1 (en) 2010-09-02
WO2010088246A1 (en) 2010-08-05
EP2382651A1 (en) 2011-11-02

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