TWI517230B - 化學機械平面化墊體及其形成與使用方法 - Google Patents

化學機械平面化墊體及其形成與使用方法 Download PDF

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Publication number
TWI517230B
TWI517230B TW099102226A TW99102226A TWI517230B TW I517230 B TWI517230 B TW I517230B TW 099102226 A TW099102226 A TW 099102226A TW 99102226 A TW99102226 A TW 99102226A TW I517230 B TWI517230 B TW I517230B
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TW
Taiwan
Prior art keywords
domain
chemical mechanical
mechanical planarization
pad
planarization pad
Prior art date
Application number
TW099102226A
Other languages
English (en)
Chinese (zh)
Other versions
TW201034792A (en
Inventor
保羅 利菲瑞
亞奴普 馬修
史考特 新 喬
吳光偉
大衛 亞當 威爾斯
奧斯卡Ｋ 許
Original Assignee
音諾帕德股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 音諾帕德股份有限公司 filed Critical 音諾帕德股份有限公司
Publication of TW201034792A publication Critical patent/TW201034792A/zh
Application granted granted Critical
Publication of TWI517230B publication Critical patent/TWI517230B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW099102226A 2009-01-27 2010-01-27 化學機械平面化墊體及其形成與使用方法 TWI517230B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14755109P 2009-01-27 2009-01-27

Publications (2)

Publication Number Publication Date
TW201034792A TW201034792A (en) 2010-10-01
TWI517230B true TWI517230B (zh) 2016-01-11

Family

ID=42395974

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099102226A TWI517230B (zh) 2009-01-27 2010-01-27 化學機械平面化墊體及其形成與使用方法

Country Status (8)

Country Link
US (2) US8435099B2 (enExample)
EP (1) EP2382651A4 (enExample)
JP (1) JP5543494B2 (enExample)
KR (1) KR101587808B1 (enExample)
CN (1) CN102301455A (enExample)
SG (1) SG173452A1 (enExample)
TW (1) TWI517230B (enExample)
WO (1) WO2010088246A1 (enExample)

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JP6067481B2 (ja) * 2013-05-23 2017-01-25 株式会社東芝 研磨パッド、研磨方法、および研磨パッドの製造方法
CN103753382B (zh) * 2014-01-06 2016-04-27 成都时代立夫科技有限公司 一种抛光垫及其制备方法
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
TWI548481B (zh) * 2014-11-17 2016-09-11 三芳化學工業股份有限公司 拋光墊及其製造方法
KR20230169424A (ko) 2015-10-30 2023-12-15 어플라이드 머티어리얼스, 인코포레이티드 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
US11813712B2 (en) 2019-12-20 2023-11-14 Applied Materials, Inc. Polishing pads having selectively arranged porosity
US20210299816A1 (en) * 2020-03-25 2021-09-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp polishing pad with protruding structures having engineered open void space
US11806829B2 (en) 2020-06-19 2023-11-07 Applied Materials, Inc. Advanced polishing pads and related polishing pad manufacturing methods
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN115816291A (zh) * 2022-12-09 2023-03-21 万华化学集团电子材料有限公司 一种具有改善边缘效应的化学机械抛光垫、制备方法及其应用

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Also Published As

Publication number Publication date
US20130244548A1 (en) 2013-09-19
CN102301455A (zh) 2011-12-28
SG173452A1 (en) 2011-09-29
KR20110124227A (ko) 2011-11-16
KR101587808B1 (ko) 2016-01-22
US9162341B2 (en) 2015-10-20
TW201034792A (en) 2010-10-01
EP2382651A4 (en) 2013-01-16
US8435099B2 (en) 2013-05-07
JP2012516247A (ja) 2012-07-19
JP5543494B2 (ja) 2014-07-09
US20100221985A1 (en) 2010-09-02
WO2010088246A1 (en) 2010-08-05
EP2382651A1 (en) 2011-11-02

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