CN102299079B - 制造具有散热器和半导体芯片的树脂模制装配件的半导体模块的方法 - Google Patents
制造具有散热器和半导体芯片的树脂模制装配件的半导体模块的方法 Download PDFInfo
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- CN102299079B CN102299079B CN201110173760.9A CN201110173760A CN102299079B CN 102299079 B CN102299079 B CN 102299079B CN 201110173760 A CN201110173760 A CN 201110173760A CN 102299079 B CN102299079 B CN 102299079B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 150
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 229920005989 resin Polymers 0.000 claims abstract description 264
- 239000011347 resin Substances 0.000 claims abstract description 264
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 97
- 239000002826 coolant Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000004806 packaging method and process Methods 0.000 claims description 149
- 229920005992 thermoplastic resin Polymers 0.000 claims description 91
- 230000009477 glass transition Effects 0.000 claims description 15
- -1 polybutylene terephthalate Polymers 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 11
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 8
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000004677 Nylon Substances 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims description 5
- 239000004743 Polypropylene Substances 0.000 claims description 5
- 229920001778 nylon Polymers 0.000 claims description 5
- 229920001568 phenolic resin Polymers 0.000 claims description 5
- 239000005011 phenolic resin Substances 0.000 claims description 5
- 229920000573 polyethylene Polymers 0.000 claims description 5
- 229920001155 polypropylene Polymers 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 229920005749 polyurethane resin Polymers 0.000 claims description 5
- 229920001169 thermoplastic Polymers 0.000 abstract description 7
- 239000004416 thermosoftening plastic Substances 0.000 abstract description 7
- 230000005611 electricity Effects 0.000 description 32
- 239000002184 metal Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 20
- 230000001771 impaired effect Effects 0.000 description 11
- 238000001816 cooling Methods 0.000 description 9
- 238000007789 sealing Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000003507 refrigerant Substances 0.000 description 7
- 239000000498 cooling water Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 208000034189 Sclerosis Diseases 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/117—Stacked arrangements of devices
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
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- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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- H01L23/4012—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws for stacked arrangements of a plurality of semiconductor devices
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- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- General Physics & Mathematics (AREA)
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
本发明提供制造包括树脂模制封装体和冷却剂通路的半导体模块的方法。所述树脂模制封装体由热固性树脂制成的模件和热塑性树脂制成的模件构成。树脂模制封装体通过制造热塑性树脂制成的模件、放置热塑性树脂制成的模件和由功率半导体芯片、散热器、端子等构成的半导体子装配件,然后形成热固性树脂制成的模件形成。具体而言,热固性树脂制成的模件在热塑性树脂制成的模件之后形成,从而在热固性树脂制成的模件完全硬化之前产生热固性树脂制成的模件对热塑性树脂制成的模件的高度粘合,以在热固性树脂制成的模件和热塑性树脂制成的模件之间牢固形成粘合界面。这使得粘合界面产生气隙的风险最小化并避免冷却剂泄漏到树脂模制封装体之外。
Description
技术领域
本发明一般性涉及制造半导体模块的方法,所述半导体模块配备有功率半导体芯片和散热器的树脂模制封装体,所述散热器用以从功率半导体芯片散热,其可具有用作逆变器上臂(即高侧器件)或下臂(即低侧器件)之一的单个功率半导体芯片例如IGBT或功率MOSFET被树脂模制成的一合一结构,或者具有分别用作上臂和下臂的两个功率半导体芯片被树脂模制成的二合一结构。
背景技术
一种通常的半导体模块配备有树脂模制封装体,其中设置有半导体芯片和用于将半导体芯片产生的热散发的散热器。作为用于这种模制件的树脂材料,通常使用热固性树脂如环氧树脂以改善封装体的耐热性。
然而热固性树脂在硬化后难以破裂。因此,当热固性树脂的任何一部分损坏时,昂贵的半导体芯片也必须废弃。
近年来,随着对环境问题的日益关注,重复使用半导体芯片的需要日益增加。
日本专利首次公开2006-165534教导了一种半导体模块,其由堆叠的树脂模制封装体和冷却剂通路构成。在各树脂模制封装体中,埋入功率半导体芯片和散热器。当一个树脂模制封装体变得有缺陷时,半导体模块可拆分以仅将有缺陷的封装体移除并通过将其替换成新的来重新使用。
然而,当从半导体模块中移除树脂模制封装体时,封装体的表面易于受损。不希望替换这种树脂模制封装体本身。这种受损使得模制件品质劣化,并导致即使埋入封装体中的功率半导体芯片操作正常也需要将封装体抛弃。
如上述公开中教导的半导体模块可通过用一个新的树脂模制封装体来替换损坏的树脂模制封装体以再次使用。然而,当一个树脂模制封装体的功率半导体芯片工作正常,而其树脂模件在拆分树脂模制封装体的堆叠时被划伤,则通常需要更换树脂模制封装体。然而,即使其功率半导体芯片工作正常,该树脂模制封装体也要移除。这对于有限资源的利用效率而言是不利的。
为了解决上述问题,本申请的发明人致力于研究当任何一个树脂模制封装体被划伤时还能够再次使用功率半导体芯片的半导体模块结构。具体而言,树脂模制封装体由热固性树脂制主体和热塑性树脂制外壳构成。热固性树脂制主体具有埋入其中的装配件如功率半导体芯片等。热塑性树脂制外壳包围在热固性树脂制主体的外周并且具有形成于其中的冷却剂通路。该结构使得如果一个树脂模制封装体被划伤,那么能够将其从半导体模块中分离并且加热软化以移除热塑性树脂制外壳,由此只将其中设置有功率半导体芯片的热固性树脂制主体从树脂模制封装体中取出。通过将热固性树脂制主体置于模具中和将热塑性树脂注入模具中以在热固性树脂制主体周围再次形成热塑性树脂制外壳,可重建树脂模制封装体。这使得在树脂模制封装体的表面被划伤时还能再次使用功率半导体芯片。这对于在分解半导体模块以取出另一个有缺陷的树脂模制封装体的过程中一个树脂模制封装体被划伤的情况非常有用。
然而,我们发现由两种树脂模制成的树脂模制封装体的上述结构:热固性树脂制主体和热塑性树脂制外壳存在下面问题。
在制成热固性树脂制主体之后形成热塑性树脂制外壳使得二者之间缺乏粘合性,可能导致在热塑性树脂制外壳和热固性树脂制主体之间的界面处出现气隙,从而导致冷却剂泄漏到热固性树脂制主体中的功率半导体芯片。
图10(a)和10(b)说明了由树脂模制封装体10的堆叠制成的半导体模块内这种冷却剂泄漏的实例。
各个树脂模制封装体10配备有与IGBT的集电极连接的正电端子15、与IGBT的发射极连接的负电端子16、以及用于感测给定参数的信号端子17。正电端子15、负电端子16和信号端子17部分地暴露在树脂模制封装体10外面。当热固性树脂制主体21和热塑性树脂制外壳22之间存在气隙时,如图10(b)中实线所示,可导致冷却剂从冷却剂通路泄漏到气隙中并且流出树脂模制封装体到达引线15和16以及信号端子17的暴露部分。如图10(a)中实线所示,这可导致正电端子15和负电端子16之间或者信号端子17中的漏电。
发明内容
因此,一个目的是提供改善结构的半导体模块,其配备有树脂模制封装体,并且设计为使埋入树脂模制封装体的功率半导体芯片能够再次使用,并且也使导致半导体模块中流动冷却剂泄漏的气隙产生的可能性最小化。
根据实施方案的一个方面,提供了一种制造半导体模块的方法,所述半导体模块可与用于电动机的逆变器一起应用并且包括树脂模制封装体和冷却剂通路。所述制造方法包括:(a)第一步骤,制备功率半导体芯片、第一散热器、第二散热器和电端子的半导体子装配件,所述功率半导体芯片具有彼此相反的第一和第二表面并且配备有与电端子连接的半导体功率器件;(b)第二步骤,形成限定树脂模制封装体外壳的热塑性树脂制成的模件;(c)第三步骤,将所述热塑性树脂制成的模件和所述半导体子装配件置于给定模具中,然后在热塑性树脂制成的模件内形成热固性树脂制成的模件,以制造作为树脂模制封装体的树脂模制装配件,在所述装配件中形成限定冷却剂的通路的冷却剂通路,所述第一散热器设置为与所述功率半导体芯片的所述第一表面连接,所述第二散热器设置为与所述功率半导体芯片的所述第二表面连接,各所述电端子具有从所述树脂模制装配件暴露出的部分,用于所述热固性树脂制成的模件的材料的玻璃化转变温度高于所述热塑性树脂制成的模件的材料的玻璃化转变温度;和(e)第四步骤,通过盖保持所述树脂模制封装体以完成所述半导体模块。
具体地,在热塑性树脂制成的模件之后制造热固性树脂制成的模件。这将导致在热固性树脂制成的模件完全硬化之前产生热固性树脂制成的模件对热塑性树脂制成的模件的高度粘合,从而在热固性树脂制成的模件和热塑性树脂制成的模件之间牢固形成粘合界面。这使得在粘合界面产生气隙的风险最小化并避免冷却剂泄漏到树脂模制封装体之外。
在实施方案的优选方式中,第三步骤将热固性树脂注入到其中已设置有所述热塑性树脂制成的模件和所述半导体子装配件的所述模具中以形成所述热固性树脂制成的模件。
第三步骤将热塑性树脂制成的模件置于远离模具内的半导体子装配件的电端子,并将热固性树脂也注入热塑性树脂制成的模件和电端子之间的气隙中。这也导致端子与树脂模制装配件之间的高度粘合性。
热固性树脂可为环氧树脂、酚醛树脂、硅树脂和聚氨酯树脂中的一种。
热塑性树脂可为聚亚苯基硫醚、聚对苯二甲酸丁二醇酯、尼龙、聚乙烯和聚丙烯中的一种。
根据本发明的另一方面,提供一种制造半导体模块的方法,所述半导体模块包括树脂模制封装体和冷却剂通路。所述制造方法包括:(a)第一步骤,制备功率半导体芯片、第一散热器、第二散热器和电端子的半导体子装配件,所述功率半导体芯片具有彼此相反的第一和第二表面并且配备有与电端子连接的半导体功率器件;(b)第二步骤,形成限定树脂模制封装体的外壳的热塑性树脂制成的模件;(c)第三步骤,将所述热塑性树脂制成的模件和所述半导体子装配件置于给定模具中,然后在热塑性树脂制成的模件内形成热固性树脂制成的模件,以制造作为一个树脂模制封装体的树脂模制装配件,在所述装配件中形成限定冷却剂的通路的冷却剂通路,所述第一散热器设置为与所述功率半导体芯片的所述第一表面连接,所述第二散热器设置为与所述功率半导体芯片的所述第二表面连接,各所述电端子具有暴露于所述树脂模制装配件之外的部分,用于所述热固性树脂制成的模件的材料的玻璃化转变温度高于所述热塑性树脂制成的模件的材料的玻璃化转变温度;(d)第四步骤,进行第一、第二和第三步骤以制造另一个树脂模制封装体;和(e)第五步骤,制造树脂模制封装体的堆叠作为封装体堆叠和通过盖保持所述封装体堆叠以完成所述半导体模块。
具体而言,在各树脂模制封装体中在热塑性树脂制成的模件之后制造热固性树脂制成的模件。这将导致在热固性树脂制成的模件完全硬化之前产生热固性树脂制成的模件对热塑性树脂制成的模件的高度粘合,从而在热固性树脂制成的模件和热塑性树脂制成的模件之间牢固形成粘合界面。这使得在粘合界面产生气隙的风险最小化并避免冷却剂泄漏到树脂模制封装体之外。
在实施方案的优选方式中,第三步骤将热固性树脂注入到其中已设置有所述热塑性树脂制成的模件和半导体子装配件的模具中以形成热固性树脂制成的模件。
第三步骤将热塑性树脂制成的模件置于远离模具内的半导体子装配件的电端子,并且将热固性树脂也注入到热塑性树脂制成的模件和电端子之间的气隙中。
热固性树脂可为环氧树脂、酚醛树脂、硅树脂和聚氨酯树脂中的一种。
热塑性树脂可为聚亚苯基硫醚、聚对苯二甲酸丁二醇酯、尼龙、聚乙烯和聚丙烯中的一种。
附图说明
通过以下详细说明和通过本发明优选实施方案的附图将更加全面理解本发明,然而,不能认为本发明受限于特定的实施方案,实施方案只是用作解释和理解的目的。
在附图中:
图1(a)是沿着图1(b)中线B-B′所取的垂直截面图,其示出根据第一实施方案的半导体模块;
图1(b)是沿着图1(a)中线A-A′所取的垂直截面图;
图2(a)是示出内置于图1的半导体模块中的一个树脂模制封装体的平面图;
图2(b)是沿着图2(a)中线C-C′所取的截面图;
图2(c)是沿着图2(a)中线D-D′所取的截面图;
图3(a)、3(b)、3(c)和3(d)是说明制造图2(a)至2(c)中所示的树脂模制封装体的一系列步骤的截面图;
图4(a)、4(b)和4(c)是说明制造图2(a)至2(c)中所示的树脂模制封装体的热固性树脂制成的模件的一系列步骤的截面图;
图5(a)、5(b)和5(c)是说明组装如图1所示半导体模块的一系列步骤的截面图;
图6是示出图2(a)至2(c)的树脂模制封装体的热固性树脂制成的模件和热塑性树脂制成的模件之间粘合界面的截面图;
图7是示出图2(a)至2(c)的树脂模制封装体的变化方案的横截面图
图8是示出根据第二实施方案的树脂模制封装体的截面图;
图9是示出根据第三实施方案的树脂模制封装体的截面图;
图10(a)是示出常规树脂模制封装体的平面图;和
图10(b)是示出配备有图10(a)的树脂模制封装体的常规半导体模块的垂直截面图。
具体实施方式
参照附图,其中在几个视图中的相同附图标记指代相同的部件,示出通过根据第一实施方案的制造方法制造的具有冷却机构的半导体模块1。
图1(a)和1(b)说明半导体模块1的垂直截面前视图和侧视图。图1(a)是沿着图1(b)中线B-B′截取的。图1(b)是沿着图1(a)的线A-A′截取的。
半导体模块1包括树脂模制封装体10的堆叠。各个树脂模制封装体10配备有功率半导体芯片11。树脂模制封装体10彼此基本上结构相同,为了公开的简明,下面的讨论将仅涉及一个树脂模制封装体10。
图2(a)至2(c)说明树脂模制封装体10的结构。图2(a)是树脂模制封装体10的正视图。图2(b)是沿着图2(a)中线C-C′所取的截面图。图2(c)是沿着图2(a)中线D-D′所取的截面图。
树脂模制封装体10还包括金属块12、散热器13和14、正电端子15、负电端子16和信号端子17。功率半导体芯片11、金属块12、散热器13和14、正电端子15、负电端子16和信号端子17通过树脂模制为单个树脂模制装配件20作为树脂模制封装体10。树脂模制封装体10是配备有单个功率半导体芯片11的1合1结构,但作为选择方案,也可设计为具有两个或更多个功率半导体芯片11。
在该实施方案中,功率半导体芯片11配备有半导体功率器件例如IGBT,其是垂直型的,其中电流在其厚度方向流动。功率半导体芯片11具有位于其第一表面和第二表面的一些类型的垫。具体而言,垫形成在与IGBT的栅极和发射极电连接的功率半导体芯片11的第一表面上,同时垫形成在与IGBT的集电极电连接的功率半导体芯片11的第二表面的整个区域上。
功率半导体芯片11为其中电流在其基底的横向方向流动的水平类型。
金属块12由热导率高的金属材料如铜或铝制成。金属块12胶接或机械焊接和电焊接到形成于功率半导体芯片11的第一表面的垫上并且与IGBT的发射极连接。金属块12置于功率半导体芯片11的第一表面上以确保功率半导体芯片11的第一表面和散热器14之间的间隙。
各个散热器13和14将功率半导体芯片11产生的热散发。散热器13也机械和电接合到在功率半导体芯片11第二表面上的垫,并且另外用作与IGBT的集电极接合的电引线。散热器14机械和电固定于金属块12,并且另外用作与IGBT的发射极接合的电引线。各个散热器13和14是由高热导率的金属材料如铜制成并且由指定厚度的方形金属板形成。远离功率半导体芯片11的各个散热器13和14的表面从树脂模制装配件20暴露于冷却剂,下文将详述。该各个散热器13和14的表面上设置有绝缘构件(未示出),用于使散热器13和14与冷却水隔离以避免电流从散热器13和14泄漏到冷却剂。
正电端子15与散热器13一体化形成作为其一部分或者焊接或焊合到其上,从而使其与固定至功率半导体芯片11第二表面的垫电连接并且导向IGBT的集电极。正电端子15的末端从树脂模制装配件20暴露用于与外部装置电连接。
负电端子16与散热器14一体化形成作为其一部分或者焊接或焊合到其上,从而使其与固定至功率半导体芯片11第一表面的垫电连接并且导向IGBT的发射极。负电端子16远离散热器14的一个末端从树脂模制装配件20暴露出用于与外部装置电连接。
信号端子17用于监测流过与IGBT的栅极连接的引线和IGBT本身的电流,并且还监测功率半导体芯片11的温度。信号端子17在其末端通过连接导线18与形成于功率半导体芯片11第一表面的垫电连接,并且其另一端还暴露于树脂模制装配件20之外用于与外部装置电连接。如上所述,功率半导体芯片11的第一表面和散热器18之间的空间由金属块12产生,因此能确保功率半导体芯片11与信号端子17的电连接而不会使连接导线18与散热器14有物理和电干扰。
根据如下步骤形成树脂模制装配件20。通过焊料将部件即功率半导体芯片11和金属端子组装到具有负电端子16的散热器13上(图3(a))。然后,通过导线18将功率半导体芯片11的第一表面上的信号垫与信号端子连接。然后,具有正电端子15的散热器14通过焊料连接(图3(b))。然后通过传递模塑机形成第一模件。树脂模制装配件20由两种模件制成:热固性树脂制主体21(即第一模件)和热塑性树脂制外壳22(即第二模件)。热固性树脂制主体21具有埋入其中的上述部件。热塑性树脂制外壳22作为框围绕热固性树脂制主体21的外周或作为热固性树脂制主体21的外周的壁。
热固性树脂制主体21是由例如环氧树脂、酚醛树脂、硅树脂或聚氨酯树脂制成并且包围或隔离树脂模制封装体10的部件。热固性树脂制主体21也成形为使得正电端子15、负电端子16和信号端子17的末端延伸到外面并且散热器13和14的主要表面也暴露在外。在树脂模制装配件20的部件中,仅热固性树脂制主体21以防水形式与树脂模制封装体10的部件隔离。热固性树脂制主体21为矩形并且具有两个长侧面,正电端子15和负电端子16从其中一个延伸,信号端子16从另一个延伸。其中设置树脂模制封装体10的部件的热固性树脂制主体21通常称为可再次使用的功率卡(power card)。
热塑性树脂制外壳22由例如聚亚苯基硫醚(PPS)、聚对苯二甲酸丁二醇酯、尼龙、聚乙烯或聚丙烯制成并且覆盖热固性树脂制主体21的外周,以使得正电端子15、负电端子16和信号端子17的末端和散热器13和14的表面暴露于其外。如图2(b)和2(c)所示,热塑性树脂制外壳22通过分离的两部分形成:上片221和下片222。上片221和下片222包围热固性树脂制主体22的外周壁的周围。热塑性树脂制外壳22中形成矩形窗口22a和22b,通过所述窗口使得散热器13和14的表面暴露到树脂模制封装体10之外。
如图1所示,热塑性树脂制外壳22限定用作冷却机构工作的冷却剂通路30的一部分,通过所述冷却机构冷却介质或制冷剂流动以冷却半导体模块1。具体而言,热塑性树脂制外壳22由封闭椭圆形板制成,其长侧表面与热固性树脂制主体21的长侧表面平行延伸。热塑性树脂制外壳22具有形成于其中的椭圆孔22c和凹陷22d。孔22c位于热塑性树脂制外壳22的部分中,如图2(a)清楚所示,其位于热固性树脂制主体21的相反端的外部,并且限定冷却剂通路30的部分。凹陷22d形成在相反的热塑性树脂制外壳22的主表面中。由图1可见,凹陷22d也可限定部分冷却剂通路30。具体而言,当树脂模制封装体10如图1所示堆叠为互相重叠时,热塑性树脂制块22的孔22c和凹陷22d完成冷却剂通路30。
热塑性树脂制外壳22在其外周边缘形成密封安装槽22e,其围绕凹陷22d延伸,如图1,2(b)和2(c)所示其中设有O型环42。当树脂模制封装体10如图1所示堆叠为互相重叠时,各个树脂模制封装体10的O型环42将置于与相邻的树脂模制封装体直接邻接以在其间产生密闭密封,以防止冷却水流经冷却剂通路30泄漏到树脂模件20之外。
如图1所示,半导体模块1还包括上盖40、下盖41和夹子43。
如图1可见,上盖40和下盖41置于树脂模制封装体10的堆叠的相反端。盖40由轮廓与各个树脂模制封装体10的树脂模制装配件20轮廓一致的板制成。当盖40置于树脂模制封装体10的堆叠的一端上时,在盖40的第二表面和最上方一个树脂模制封装体10的凹陷22d之间产生气隙。下盖41由轮廓与各个树脂模制封装体10的树脂模制装配件20的轮廓一致的板制成并且配备有两个管41a和41b。管41a和41b基本上垂直于下盖41延伸,并且与对齐以限定冷却剂通路30的树脂模制封装体10的孔22c连通。管41a用作冷却剂进口,而管41b用作冷却剂出口。下盖41中还形成有其中设有O型环42的密封安装槽41c。
O型环42设置于树脂模制封装体10的密封安装孔22e和下盖41的密封安装孔41c中,以在每相邻两个树脂模制封装体10之间和树脂模制封装体10与上盖40和下盖41之间产生密闭密封。
夹子43用作紧固件以将上盖40和下盖41与其中在槽22e和41c中设有O型环42的树脂模制封装体10的堆叠紧密连接,以完成半导体模块1。具体而言,如图1可见,各个夹子43夹住上盖40和下盖41,以将上盖40和下盖41与树脂模制封装体10的堆叠的装配件紧紧保持,从而在半导体模块1内完成冷却剂通路30。这种装配件在下文也称为模块装配件。夹子43是可拆卸的以用于拆分上盖40和下盖41以及树脂模制封装体10。各个夹子43在其末端具有钩。钩之间的间隙小于上盖40和下盖41与树脂模制封装体10的堆叠的模块装配件的厚度,因此各个夹子43的钩可以弹性地夹住上盖40和下盖41。各个夹子43可任选设计为用螺钉替代钩来保持模块装配件。
如上所述,在构建的半导体模块1中使用O型环42在树脂模制封装体10、上盖40和下盖41之间产生密闭密封,从而避免冷却剂从冷却剂通路30泄漏并且确保树脂模制封装体10的功率半导体芯片11冷却到所需程度。具体而言,如图1所示,各个树脂模制封装体10的管41a和两个孔22c之一限定进口流通路31,而各个树脂模制封装体10的管41b和另一个孔22c限定出口流通路32。在各个树脂模制封装体10的表面中形成的凹陷22c限定分支通路33。冷却水进入管41a,流经进口流通路31,分叉到分支通路33,然后通过管41b从出口流通路32排出。冷却水在分支通路33内与散热器13和14直接接触流动并且冷却它们,因此功率半导体芯片11产生的热将由冷却水吸收。
下面将参考图3(a)至6(c)描述半导体模块1的制造方法。
图3(a)中步骤
制备具有引线框的散热器13,引线框中正电端子15、负电端子16和信号端子17安置到位。其上制造有如IGBT和/或FWD的半导体功率器件的功率半导体芯片11被焊接到散热器13的表面上。信号端子17连接到形成在功率半导体芯片11表面上的垫,例如通过连接导线18导向半导体装置的栅极。金属块12焊接到功率半导体芯片11的表面。
图3(b)中步骤
将焊料置于金属块12和负电端子16的表面。具有引线框的散热器14置于焊料上然后与金属块12连接。图3(a)和3(b)的步骤形成由功率半导体芯片11、散热器13和14、金属块12,、正电端子15、负电端子16和信号端子17构成的半导体子装配件。
图3(c)中步骤
制备热塑性树脂制外壳22的上片221和下片222。上片221和下片222分别用模具制造。
图3(d)中的步骤
制备例如传递模塑机的模具的下部模板50。下模板51中形成轮廓与下片222的轮廓一致的空腔51a。下片222置于空腔51a中。如图3(a)和3(b)步骤中制造的,如上述步骤中制备的半导体部件的子装配件(即功率半导体芯片11、金属块12、具有引线框的散热器13和14、信号端子17等)置于下片222中。
图4(a)中的步骤
上片221置于下片222之上并彼此间具有给定间隔。上片221和下片222分别具有形成于其上或其部分中的钉和孔(未示出),其不干扰引线框和信号端子17。钉插入孔中将上片221和下片222相互定位。
图4(b)中步骤
制备模具的上模板52。上模板52置于下模板51上,在下模板51之上或之中设置有下片222和其它部件。当上模板52置于下模板51之上时,如图4(b)可见,形成轮廓与热固性树脂制主体21的轮廓一致的空腔。
图4(c)中步骤
通过在模具50中形成的树脂进口(未示出)将热固性树脂如环氧树脂注入空腔,从而模制热固性树脂制主体21。然后,拆分上模板52和下模板51以完成树脂模制封装体10。在该步骤中可移除散热器13和14的引线框。
从上述讨论显见,热固性树脂制主体21是在制造热塑性树脂制外壳22之后形成的。这将导致在热固性树脂制主体21硬化之前产生热固性树脂制主体21对热塑性树脂制外壳22的高度粘合性,从而在热固性树脂制主体21和热塑性树脂制外壳22之间形成紧密粘合界面。图6说明热固性树脂制主体21和热塑性树脂制外壳22之间的粘合界面23。如图6中实线所示的粘合界面23在热固性树脂制主体21和热塑性树脂制外壳22的相反外表面上整体延伸,从而确保其间的紧密物理连结而无任何间隙。
通过热固性树脂制主体21,热塑性树脂制外壳22远离正电端子15、负电端子16和信号端子17,换言之,正电端子15、负电端子16和信号端子17没有占据热固性树脂制主体21和热塑性树脂制外壳22之间的界面,从而确保热固性树脂制主体21和热塑性树脂制外壳22之间高度粘合。
图5(a)中步骤
制备多个均按照图3(a)至4(c)的步骤制备的树脂模制封装体10。例如,制备三个树脂模制封装体10。O型环42设置于各个树脂模制封装体10的热塑性树脂制外壳22的槽22e中。
图5(b)中步骤
制备上盖40和下盖41。O型环42安装在下盖41的密封安装槽41c中。上盖40置于封装体堆叠的相反端之一上,而下盖41置于封装体堆叠的另一端上。这样的装配件下文中也称为模块装配件。
图5(c)中的步骤
通过夹子43使得上述步骤中组装的封装体堆叠与上盖40和下盖41紧密地保持以完成半导体模块1,如图1所示。
如果半导体模块1的一个树脂模制封装体10在其制造和使用过程中损坏或破坏,其可通过如下方式替换。
从上盖40和下盖41与封装体堆叠的模块装配件移除夹子43。例如,通过使其钩发生弹性变形来实现夹子43移除。在夹子43是通过螺钉固定于模块装配件的情况下,通过松开螺钉实现夹子43移除。
如果一个树脂模制封装体10的树脂模制装配件20损坏或划伤,则操作者对其识别,拆分上盖40、树脂模制封装体10和下盖41并移除划伤的树脂模制封装体10。
受损的树脂模制封装体10放入热处理机如加热炉中,然后在基于玻璃化转变温度选择的、例如高于或等于热塑性树脂制外壳22的玻璃化转变温度(即软化温度)并低于热固性树脂制主体21的玻璃化转变温度(在该温度下,树脂受热导致其硬度和粘度突然下降而使其具有可流动性)的温度下加热。在热塑性树脂制外壳22由聚亚苯基硫醚制成和热固性树脂制主体21由环氧树脂制成的情况下,受损的树脂模制封装体10在高于或等于聚亚苯基硫醚的玻璃化转变温度和低于环氧树脂的玻璃化转变温度的温度120℃加热。玻璃化转变温度通常取决于树脂和填料的量。因此期望通过选择其树脂和填料的量,来确定热塑性树脂制外壳22或热固性树脂制主体21的玻璃化转变温度的值。
受损的树脂模制封装体10继续在热处理机中加热,使得仅热塑性树脂制主体22软化和从树脂模制封装体10移除,而仅留下功率卡(即热固性树脂制主体21)。注意热塑性树脂在上述温度下处于固体和液体之间的中间状态,因此不会自然消失,但可以通过推或拉将热塑性树脂制主体22从树脂模制封装体10容易地移除。
通过其封装装配件的由热固性树脂制主体21制成的功率卡置于与形成热塑性树脂制外壳22所用同一个模中。将热塑性树脂注入模中以形成热塑性树脂制外壳22来覆盖功率卡的外周,从而重建树脂模制封装体10。
重建的树脂模制封装体10和上述剩余的树脂模制封装体10用如上所述的相同方式堆叠。上盖40和下盖41置于封装体堆叠的相反两端并且用夹子43夹紧以重建半导体模块1。
这使得除了热塑性树脂制外壳22之外的树脂模制封装体10部分再次使用而不丢弃树脂模制封装体10的部件如功率半导体芯片11、散热器13和14等。
如上所述,树脂模制封装体10的重建通过将热塑性树脂注入其中已设置功率卡(即热固性树脂制主体21)的模中,以形成热塑性树脂制外壳22,这可导致热固性树脂制主体21和热塑性树脂制外壳22之间粘合性缺乏,导致尤其当冷却剂压力高时冷却剂从冷却剂通路30泄漏的问题。在这种情况下,如图3(a)至4(c)的步骤制造的树脂模制封装体10可取代受损树脂模制封装体10用于重建半导体模块1。受损的树脂模制封装体10可用作其它类型产品的功率卡。
从上述讨论显见,树脂模制封装体10的部件(例如功率半导体芯片11等)通过热固性树脂制主体21封装以确保其具有所需的耐热性能。另外,热固性树脂制主体21的外围被热塑性树脂制外壳22覆盖。热塑性树脂制外壳22限定了冷却剂通路30的一部分。在树脂模制封装体10组装成半导体模块1并用作冷却机构以从树脂模制封装体10消散热量时,完成冷却剂通路30。
如果一个树脂模制封装体10破损,则半导体模块1的结构允许其被另一个替换,从而可以再次使用半导体模块1。如果仅热塑性树脂制外壳22受损,则可以使其热软化并从树脂模制封装体10移除以保留热固性树脂制主体21(即功率卡)。可再次使用热固性树脂制主体12以重建树脂模制封装体10。这使得无需丢弃树脂模制封装体10的部件如功率半导体芯片11等。
如果一个树脂模制封装体10破损,并且另一个树脂模制封装体10的表面在拆分半导体模块1时受损或划伤,则树脂模制封装体10的结构使得其部件如功率半导体芯片11等可用于资源的再次利用。
如上所述,在制造热塑性树脂制外壳22之后形成热固性树脂制主体21。这将导致在热固性树脂制主体21硬化之前产生热固性树脂制主体21对热塑性树脂制外壳22的高度粘合,从而在热固性树脂制主体21和热塑性树脂制外壳22之间形成紧密连结而在其间无任何气隙。这避免冷却剂泄漏到热固性树脂制主体21。
图7说明树脂模制封装体10的变化方案。从图6可见,上述实施方案中的树脂模制封装体10设计为热固性树脂制主体21的外周表面与热塑性树脂制外壳22的外周表面齐平因而易于受损。图7的结构使这种问题最小化。具体而言,热固性树脂制主体21的外周表面位于热塑性树脂制外壳22的外周表面的径向内侧,从而使物理受损的风险最小化。
以下将描述根据第二实施方案的半导体模块1,其中散热器13和14的结构与第一实施方案不同。其它布置相同,故而此处省略其详细说明。
图8是说明构成第二实施方案的半导体模块1的一个树脂模制封装体10的横截面图。
树脂模制封装体10包括分别在散热器13和14的外主表面和外周上延伸的绝缘膜13a和14a。换言之,绝缘膜13a和14a包围散热器13和14的周围区域,从而散热器13和14不与树脂模制封装体10的部件电连接。
各个散热器13和14具有远离功率半导体芯片11并且暴露于冷却剂流以增强散热器13和14的冷却能力的主表面。当导电的水用作冷却剂时,可导致从散热器13和14漏电,导致相邻两个树脂模制封装体10的散热器13和14之间短路。为了避免该问题,将绝缘膜13a和14a固定于暴露在热固性树脂制主体21外的散热器13和14的区域。绝缘膜13a和14a的形成可通过利用喷涂技术实现。
绝缘膜13a和14a可任选仅在散热器13和14的外部主表面形成。
下面将描述根据第三实施方案的半导体模块1,其中冷却机构的结构与第二实施方案中不同。其它布置相同,因此此处省略其详细说明。
图9是说明构成第三实施方案的半导体模块1的一个树脂模制封装体10的横截面图。
树脂模制封装体10包括通过金属膜60分别设置在绝缘膜13a和14a的表面上的金属翅片散热器61。翅片散热器61暴露于流经冷却剂通路30的冷却剂以将来自散热器13和14的热传递到冷却剂。
金属膜60由例如铝制成。翅片散热器61也由例如铝制成。各个翅片散热器61可为具有多个钉(pin)的钉型,具有多个板的直型,或者具有多个扩口板的扩口(或波浪)型。
翅片散热器61增加与流经冷却剂通路30的冷却剂的接触表面积并且还用于产生冷却剂的湍流,从而增强冷却树脂模制封装体10的能力。
类似第二实施方案,树脂模制封装体10具有在散热器13和14的外主表面和外周表面包围的绝缘膜13a和14a,从而避免从散热器13和14漏电。
翅片散热器61可通过导电接合材料与绝缘膜13a和14a直接连接。然而,翅片散热器61与绝缘膜13a和14a的连结强度取决于翅片散热器61的形状而下降。使用金属膜60确保翅片散热器61与绝缘膜13a和14a所需程度的粘合。翅片散热器61可用超声波接合技术固定于金属膜60。金属膜60具有平的表面并且可利用导电接合材料直接粘到散热器13和14的绝缘膜13a和14a上。
虽然本发明从优选实施方案方面进行了公开以促进对其更好理解,但是应理解本发明可以多种方式实施而不背离本发明的原理。因此,本发明应理解为包括所有可能的实施方案以及对可具体化的所示实施方案进行变化的方案,而未背离由权利要求所述的本发明的原理。
例如,半导体模块1描述为用于驱动三相电动机的逆变器,但是可选用于其它类型的电学装置。
流经冷却剂通路30的冷却剂可为水或其它类型的冷却介质。
半导体模块1可制造为仅包括一个用夹子43紧密保持在上盖40和下盖41之间的树脂模制封装体10。
Claims (10)
1.一种制造包括树脂模制封装体和冷却剂通路的半导体模块的方法,包括:
第一步骤,制备功率半导体芯片、第一散热器、第二散热器和电端子的半导体子装配件,所述功率半导体芯片具有彼此相反的第一和第二表面并且配备有与所述电端子连接的半导体功率器件;
第二步骤,形成限定所述树脂模制封装体的外壳的热塑性树脂制成的模件;
第三步骤,将所述热塑性树脂制成的模件和所述半导体子装配件置于给定模具中,然后在所述热塑性树脂制成的模件内形成热固性树脂制成的模件,以制造作为树脂模制封装体的树脂模制装配件,在所述装配件中形成限定所述冷却剂的通路的冷却剂通路,所述第一散热器设置为与所述功率半导体芯片的第一表面连接,所述第二散热器设置为与所述功率半导体芯片的第二表面连接,各所述电端子具有从所述树脂模制装配件暴露出的部分,用于所述热固性树脂制成的模件的材料的玻璃化转变温度高于用于所述热塑性树脂制成的模件的材料的玻璃化转变温度;和
第四步骤,通过盖保持所述树脂模制封装体以完成所述半导体模块。
2.如权利要求1所述的方法,其中所述第三步骤将热固性树脂注入其内已设置有所述热塑性树脂制成的模件和所述半导体子装配件的所述模具中以形成所述热固性树脂制成的模件。
3.如权利要求1所述的方法,其中所述第三步骤将所述热塑性树脂制成的模件设置为远离所述模具内的所述半导体子装配件的所述电端子,并且将热固性树脂也注入到所述热塑性树脂制成的模件和所述电端子之间的气隙中。
4.如权利要求2所述的方法,其中所述热固性树脂为环氧树脂、酚醛树脂、硅树脂和聚氨酯树脂中的一种。
5.如权利要求3所述的方法,其中所述热塑性树脂为聚亚苯基硫醚、聚对苯二甲酸丁二醇酯、尼龙、聚乙烯和聚丙烯中的一种。
6.一种制造包括树脂模制封装体和冷却剂通路的半导体模块的方法,包括:
第一步骤,制备功率半导体芯片、第一散热器、第二散热器和电端子的半导体子装配件,所述功率半导体芯片具有彼此相反的第一和第二表面并且配备有与所述电端子连接的半导体功率器件;
第二步骤,形成限定所述树脂模制封装体的外壳的热塑性树脂制成的模件;
第三步骤,将所述热塑性树脂制成的模件和所述半导体子装配件置于给定模具中,然后在所述热塑性树脂制成的模件内形成热固性树脂制成的模件,以制造作为一个所述树脂模制封装体的树脂模制装配件,在所述装配件中形成限定所述冷却剂的通路的冷却剂通路,所述第一散热器设置为与所述树脂模制封装体的第一表面连接,所述第二散热器设置为与所述功率半导体芯片的第二表面连接,各所述电端子均具有暴露于所述树脂模制装配件之外的部分,用于所述热固性树脂制成的模件的材料的玻璃化转变温度高于用于所述热塑性树脂制成的模件的材料的玻璃化转变温度;
第四步骤,进行所述第一步骤、所述第二步骤和所述第三步骤以制造另一个所述树脂模制封装体;和
第五步骤,制造所述树脂模制封装体的堆叠作为封装体堆叠和通过盖保持所述封装体堆叠以完成所述半导体模块。
7.如权利要求6所述的方法,其中所述第三步骤将热固性树脂注入其内已设置有所述热塑性树脂制成的模件和所述半导体子装配件的所述模具中以形成所述热固性树脂制成的模件。
8.如权利要求6所述的方法,其中所述第三步骤将所述热塑性树脂制成的模件设置为远离所述模具内的所述半导体子装配件的所述电端子,并且将热固性树脂也注入到所述热塑性树脂制成的模件和所述电端子之间的气隙中。
9.如权利要求7所述的方法,其中所述热固性树脂为环氧树脂、酚醛树脂、硅树脂和聚氨酯树脂中的一种。
10.如权利要求8所述的方法,其中所述热塑性树脂为聚亚苯基硫醚、聚对苯二甲酸丁二醇酯、尼龙、聚乙烯和聚丙烯中的一种。
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