CN102233729B - 液体喷射头、液体喷射装置以及压电元件 - Google Patents
液体喷射头、液体喷射装置以及压电元件 Download PDFInfo
- Publication number
- CN102233729B CN102233729B CN201110087450.5A CN201110087450A CN102233729B CN 102233729 B CN102233729 B CN 102233729B CN 201110087450 A CN201110087450 A CN 201110087450A CN 102233729 B CN102233729 B CN 102233729B
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- Prior art keywords
- piezoelectric
- mole
- body layer
- piezoelectric body
- mol
- Prior art date
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- 239000007788 liquid Substances 0.000 title claims abstract description 97
- 239000011572 manganese Substances 0.000 claims abstract description 39
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 36
- FSAJRXGMUISOIW-UHFFFAOYSA-N bismuth sodium Chemical compound [Na].[Bi] FSAJRXGMUISOIW-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000006104 solid solution Substances 0.000 claims abstract description 7
- 229910002113 barium titanate Inorganic materials 0.000 claims description 17
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 17
- YPQJHZKJHIBJAP-UHFFFAOYSA-N [K].[Bi] Chemical compound [K].[Bi] YPQJHZKJHIBJAP-UHFFFAOYSA-N 0.000 claims description 13
- 230000005684 electric field Effects 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 3
- 239000012190 activator Substances 0.000 claims 2
- 229910052788 barium Inorganic materials 0.000 claims 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 2
- 239000010409 thin film Substances 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 153
- 239000000758 substrate Substances 0.000 description 34
- 229910002115 bismuth titanate Inorganic materials 0.000 description 31
- 230000000052 comparative effect Effects 0.000 description 26
- 239000000463 material Substances 0.000 description 23
- 239000010408 film Substances 0.000 description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000011734 sodium Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000007613 environmental effect Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000004549 pulsed laser deposition Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 239000002609 medium Substances 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000000018 DNA microarray Methods 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000882 Ca alloy Inorganic materials 0.000 description 1
- 208000016169 Fish-eye disease Diseases 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 241000877463 Lanio Species 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229940104825 bismuth aluminate Drugs 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- DHMGMTYGCBZFST-UHFFFAOYSA-N dibismuth;dioxido(dioxo)chromium Chemical compound [Bi+3].[Bi+3].[O-][Cr]([O-])(=O)=O.[O-][Cr]([O-])(=O)=O.[O-][Cr]([O-])(=O)=O DHMGMTYGCBZFST-UHFFFAOYSA-N 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- PDSAKIXGSONUIX-UHFFFAOYSA-N hexaaluminum;dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Bi+3].[Bi+3] PDSAKIXGSONUIX-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- UYLYBEXRJGPQSH-UHFFFAOYSA-N sodium;oxido(dioxo)niobium Chemical compound [Na+].[O-][Nb](=O)=O UYLYBEXRJGPQSH-UHFFFAOYSA-N 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8561—Bismuth-based oxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Coating Apparatus (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010092907A JP5585768B2 (ja) | 2010-04-14 | 2010-04-14 | 液体噴射ヘッド、液体噴射装置および圧電素子 |
| JP2010-092907 | 2010-04-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102233729A CN102233729A (zh) | 2011-11-09 |
| CN102233729B true CN102233729B (zh) | 2014-07-09 |
Family
ID=44787916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110087450.5A Active CN102233729B (zh) | 2010-04-14 | 2011-04-06 | 液体喷射头、液体喷射装置以及压电元件 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8636342B2 (enExample) |
| JP (1) | JP5585768B2 (enExample) |
| CN (1) | CN102233729B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010150126A (ja) * | 2008-11-18 | 2010-07-08 | Ngk Insulators Ltd | 圧電／電歪セラミックス組成物、圧電／電歪セラミックスの焼結体、圧電／電歪素子、圧電／電歪セラミックス組成物の製造方法及び圧電／電歪素子の製造方法 |
| AU2013245946A1 (en) | 2012-04-10 | 2014-11-27 | Eyenovia, Inc. | Spray ejector mechanisms and devices providing charge isolation and controllable droplet charge, and low dosage volume opthalmic administration |
| SG11201406716WA (en) | 2012-04-20 | 2015-03-30 | Eyenovia Inc | Spray ejector device and methods of use |
| US9463486B2 (en) | 2012-05-14 | 2016-10-11 | Eyenovia, Inc. | Laminar flow droplet generator device and methods of use |
| JP6240170B2 (ja) | 2012-05-15 | 2017-11-29 | アイノビア，インコーポレイティド | エジェクタ装置，並びにその方法，ドライバ，及び回路 |
| US9343650B2 (en) * | 2013-03-29 | 2016-05-17 | Fuji Chemical Co., Ltd. | Piezoelectric material, piezoelectric element, multilayered piezoelectric element, liquid ejection head, liquid ejection apparatus, ultrasonic motor, optical equipment, vibration apparatus, dust removing apparatus, imaging apparatus, and electronic equipment |
| JP6349738B2 (ja) * | 2013-03-29 | 2018-07-04 | Tdk株式会社 | 圧電組成物および圧電素子 |
| JP5761540B2 (ja) * | 2013-06-28 | 2015-08-12 | セイコーエプソン株式会社 | 圧電材料、圧電素子、液体噴射ヘッド、液体噴射装置、超音波センサー、圧電モーター及び発電装置 |
| JP5754660B2 (ja) | 2013-06-28 | 2015-07-29 | セイコーエプソン株式会社 | 圧電材料、圧電素子、液体噴射ヘッド、液体噴射装置、超音波センサー、圧電モーター及び発電装置 |
| JP2015038953A (ja) | 2013-06-28 | 2015-02-26 | セイコーエプソン株式会社 | 圧電材料、圧電素子、液体噴射ヘッド、液体噴射装置、超音波センサー、圧電モーター及び発電装置 |
| JP6398771B2 (ja) * | 2014-03-31 | 2018-10-03 | Tdk株式会社 | 圧電組成物および圧電素子 |
| CN104496468A (zh) * | 2014-11-27 | 2015-04-08 | 济南大学 | 一种降低钛酸铋钠基薄膜矫顽场及提高其耐压性的方法 |
| WO2016103515A1 (ja) * | 2014-12-26 | 2016-06-30 | セイコーエプソン株式会社 | 圧電材料の製造方法、並びにこれにより製造された圧電材料を用いた圧電素子、及び圧電素子応用デバイス |
| US10427981B2 (en) | 2014-12-26 | 2019-10-01 | Seiko Epson Corporation | Piezoelectric material, method of manufacturing the same, piezoelectric element, and piezoelectric element application device |
| JP6375955B2 (ja) * | 2015-01-08 | 2018-08-22 | Tdk株式会社 | 圧電組成物および圧電素子 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1745486A (zh) * | 2003-01-31 | 2006-03-08 | 佳能株式会社 | 压电元件 |
| CN1911665A (zh) * | 2005-08-09 | 2007-02-14 | 精工爱普生株式会社 | 致动器装置及其制造方法、液体喷射头以及液体喷射装置 |
| WO2009119322A1 (ja) * | 2008-03-26 | 2009-10-01 | Tdk株式会社 | 圧電磁器及び圧電磁器組成物 |
| CN101638004A (zh) * | 2008-07-28 | 2010-02-03 | 精工爱普生株式会社 | 液体喷射头和液体喷射装置及压电元件 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85100513B (zh) * | 1985-04-01 | 1987-08-19 | 中国科学院上海硅酸盐研究所 | 钛酸铋钠钡系超声用压电陶瓷材料 |
| JP4748291B2 (ja) * | 2001-01-10 | 2011-08-17 | Ｔｄｋ株式会社 | 積層体変位素子 |
| JP4708667B2 (ja) * | 2002-08-08 | 2011-06-22 | キヤノン株式会社 | アクチュエータおよび液体噴射ヘッド |
| JP4165347B2 (ja) * | 2003-06-25 | 2008-10-15 | セイコーエプソン株式会社 | 圧電素子の製造方法 |
| JP3994163B2 (ja) | 2003-09-26 | 2007-10-17 | 独立行政法人物質・材料研究機構 | Ｎｂｔ強誘電体薄膜の製造方法 |
| JP5127268B2 (ja) * | 2007-03-02 | 2013-01-23 | キヤノン株式会社 | 圧電体、圧電体素子、圧電体素子を用いた液体吐出ヘッド及び液体吐出装置 |
| JP4973931B2 (ja) * | 2007-03-27 | 2012-07-11 | Ｔｄｋ株式会社 | 圧電磁器組成物 |
| JP5253894B2 (ja) * | 2007-06-08 | 2013-07-31 | 富士フイルム株式会社 | 強誘電体膜、圧電素子、及び液体吐出装置 |
| JP5394765B2 (ja) * | 2008-03-31 | 2014-01-22 | 富士フイルム株式会社 | ペロブスカイト型酸化物膜、強誘電体、圧電素子、液体吐出装置 |
| JP5345868B2 (ja) * | 2008-03-31 | 2013-11-20 | 富士フイルム株式会社 | ペロブスカイト型酸化物膜、強誘電体、圧電素子、液体吐出装置 |
| JP5248168B2 (ja) * | 2008-04-01 | 2013-07-31 | セイコーエプソン株式会社 | 圧電材料および圧電素子 |
| CN101798214A (zh) * | 2010-03-03 | 2010-08-11 | 天津大学 | (Na1/2Bi1/2)TiO3/BaTiO3陶瓷介质材料及其电容器的制备方法 |
-
2010
- 2010-04-14 JP JP2010092907A patent/JP5585768B2/ja not_active Expired - Fee Related
-
2011
- 2011-04-06 CN CN201110087450.5A patent/CN102233729B/zh active Active
- 2011-04-06 US US13/081,158 patent/US8636342B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1745486A (zh) * | 2003-01-31 | 2006-03-08 | 佳能株式会社 | 压电元件 |
| CN1911665A (zh) * | 2005-08-09 | 2007-02-14 | 精工爱普生株式会社 | 致动器装置及其制造方法、液体喷射头以及液体喷射装置 |
| WO2009119322A1 (ja) * | 2008-03-26 | 2009-10-01 | Tdk株式会社 | 圧電磁器及び圧電磁器組成物 |
| CN101638004A (zh) * | 2008-07-28 | 2010-02-03 | 精工爱普生株式会社 | 液体喷射头和液体喷射装置及压电元件 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011222884A (ja) | 2011-11-04 |
| JP5585768B2 (ja) | 2014-09-10 |
| US20110254901A1 (en) | 2011-10-20 |
| US8636342B2 (en) | 2014-01-28 |
| CN102233729A (zh) | 2011-11-09 |
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