JP3994163B2 - Nbt強誘電体薄膜の製造方法 - Google Patents
Nbt強誘電体薄膜の製造方法 Download PDFInfo
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- JP3994163B2 JP3994163B2 JP2003336420A JP2003336420A JP3994163B2 JP 3994163 B2 JP3994163 B2 JP 3994163B2 JP 2003336420 A JP2003336420 A JP 2003336420A JP 2003336420 A JP2003336420 A JP 2003336420A JP 3994163 B2 JP3994163 B2 JP 3994163B2
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- Prior art keywords
- thin film
- nbt
- bismuth
- ferroelectric
- substrate
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- 239000010409 thin film Substances 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 19
- 229910052797 bismuth Inorganic materials 0.000 claims description 17
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 230000010287 polarization Effects 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910000416 bismuth oxide Inorganic materials 0.000 description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000005068 transpiration Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JHXKRIRFYBPWGE-UHFFFAOYSA-K bismuth chloride Chemical compound Cl[Bi](Cl)Cl JHXKRIRFYBPWGE-UHFFFAOYSA-K 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 150000002611 lead compounds Chemical class 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000003852 thin film production method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
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- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Inorganic Insulating Materials (AREA)
Description
J.Europ.Ceram.Soc.,21(2001)1299 日本セラミックス協会、「第15回秋季シンポジウム講演要旨集」、p.260、2002
(比較例1)
ターゲットとしてBi:Na:Ti=1.1:1.0:2.0の組成比をもつ、空気中1000℃焼成により作成した多結晶酸化物の単一ターゲットを用い、シリコン単結晶基板上に中間層としてMgO層を介して白金電極を形成した基板を用い、RFマグネトロンスパッタリング法によりNBT薄膜を形成した。スパッタガスには1Paのアルゴンを用い、基板温度は400℃とした。得られた薄膜を乾燥空気中で600℃で1時間、加熱処理し、上部電極として金電極を真空蒸着により作成した試料のヒステリシス特性を図2に示す。このビスマス蒸気中での加熱処理をしなかった薄膜はリーク電流が大きすぎ、残留分極値を評価できなかった。
Claims (1)
- 電極が形成された基板上に、Na、Bi、及びTiからなる金属又は酸化物をターゲットとしてスパッタリングにより薄膜を形成するNBT強誘電体薄膜の製造方法であって、0.4<Bi/Ti<0.8、0.2<Na/Ti<0.8である組成比の材料をターゲットとして、スパッタリング時に基板を加熱しないか、又は700℃以下で加熱して形成した薄膜を、ビスマス分圧が100Pa以下で0.0001Paより大きく、かつ酸素分圧が1kPa以上であるビスマスを含む酸化雰囲気中で、200℃以上、800℃以下で加熱することを特徴とするNBT強誘電体薄膜の製造方法。
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JP2005105295A JP2005105295A (ja) | 2005-04-21 |
JP3994163B2 true JP3994163B2 (ja) | 2007-10-17 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102006046979B8 (de) * | 2006-10-04 | 2008-08-28 | Siemens Ag | Verfahren zum Herstellen einer ferroelektrischen Dünnschicht des Wismut-Natrium-Titanat-Systems auf einem Substrat-, und Verwendung der ferroelektrischen Dünnschicht |
JP2011201741A (ja) * | 2010-03-26 | 2011-10-13 | Ngk Insulators Ltd | 圧電/電歪セラミックス、圧電/電歪セラミックスの製造方法、圧電/電歪素子及び圧電/電歪素子の製造方法 |
JP5585767B2 (ja) | 2010-04-14 | 2014-09-10 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置および圧電素子 |
JP5585768B2 (ja) | 2010-04-14 | 2014-09-10 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置および圧電素子 |
CN106000278B (zh) * | 2016-06-23 | 2020-05-29 | 陕西师范大学 | 一种铁磁性半导体吸附材料Na2Fe2Ti6O16的制备方法与应用 |
FR3078822B1 (fr) * | 2018-03-12 | 2020-02-28 | Soitec | Procede de preparation d’une couche mince de materiau ferroelectrique a base d’alcalin |
CN112341191B (zh) * | 2020-10-26 | 2022-02-22 | 同济大学 | 一种无铅高储能密度和高储能效率的陶瓷电介质及其制备方法 |
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JP4510966B2 (ja) * | 1999-11-19 | 2010-07-28 | 日本特殊陶業株式会社 | 圧電体セラミックス |
JP4070967B2 (ja) * | 2001-03-01 | 2008-04-02 | Tdk株式会社 | 圧電磁器 |
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