CN102222675B - 检测装置、制造该检测装置的方法和检测系统 - Google Patents

检测装置、制造该检测装置的方法和检测系统 Download PDF

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Publication number
CN102222675B
CN102222675B CN201110087328.8A CN201110087328A CN102222675B CN 102222675 B CN102222675 B CN 102222675B CN 201110087328 A CN201110087328 A CN 201110087328A CN 102222675 B CN102222675 B CN 102222675B
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Prior art keywords
electrode
switching element
conversion element
electrodes
space
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Chinese (zh)
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CN102222675A (zh
Inventor
望月千织
渡边实
石井孝昌
川锅润
藤吉健太郎
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
CN201110087328.8A 2010-04-13 2011-04-08 检测装置、制造该检测装置的方法和检测系统 Expired - Fee Related CN102222675B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010-092626 2010-04-13
JP2010092626 2010-04-13
JP2011-029087 2011-02-14
JP2011029087A JP2011238897A (ja) 2010-04-13 2011-02-14 検出装置及びその製造方法並びに検出システム

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CN102222675A CN102222675A (zh) 2011-10-19
CN102222675B true CN102222675B (zh) 2014-05-28

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US (1) US8785873B2 (enExample)
EP (1) EP2378554A3 (enExample)
JP (1) JP2011238897A (enExample)
CN (1) CN102222675B (enExample)
RU (1) RU2474922C2 (enExample)

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JP2012209421A (ja) * 2011-03-30 2012-10-25 Sony Corp 固体撮像装置及び電子機器
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JP6099035B2 (ja) * 2012-10-12 2017-03-22 Ｎｌｔテクノロジー株式会社 光電変換装置及びその製造方法並びにｘ線画像検出装置
JP2014236162A (ja) * 2013-06-04 2014-12-15 キヤノン株式会社 検出装置、その製造方法及び放射線検出システム
JP6232589B2 (ja) * 2013-06-24 2017-11-22 パナソニックＩｐマネジメント株式会社 固体撮像装置およびその製造方法
US10126437B1 (en) * 2017-05-15 2018-11-13 Prismatic Sensors Ab Detector for x-ray imaging
CN109742126B (zh) * 2019-01-11 2022-02-11 京东方科技集团股份有限公司 显示基板及其制备方法、显示面板、显示装置
CN115101550B (zh) * 2022-01-19 2025-08-26 友达光电股份有限公司 感测装置及其制造方法

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CN1294482A (zh) * 1999-11-02 2001-05-09 日东电工株式会社 电路板
CN101218680A (zh) * 2005-07-11 2008-07-09 佳能株式会社 转换设备、放射检测设备和放射检测系统
CN101682687A (zh) * 2007-07-19 2010-03-24 佳能株式会社 放射线检测设备和放射线成像系统

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Publication number Publication date
US20110248176A1 (en) 2011-10-13
JP2011238897A (ja) 2011-11-24
EP2378554A3 (en) 2013-11-13
RU2011114300A (ru) 2012-10-20
EP2378554A2 (en) 2011-10-19
US8785873B2 (en) 2014-07-22
CN102222675A (zh) 2011-10-19
RU2474922C2 (ru) 2013-02-10

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Granted publication date: 20140528