CN102216999A - 闪存的参考电压最优化 - Google Patents
闪存的参考电压最优化 Download PDFInfo
- Publication number
- CN102216999A CN102216999A CN2010800013533A CN201080001353A CN102216999A CN 102216999 A CN102216999 A CN 102216999A CN 2010800013533 A CN2010800013533 A CN 2010800013533A CN 201080001353 A CN201080001353 A CN 201080001353A CN 102216999 A CN102216999 A CN 102216999A
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- Prior art keywords
- voltage
- memory cell
- reference voltage
- module
- voltages
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- Read Only Memory (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18385909P | 2009-06-03 | 2009-06-03 | |
US61/183,859 | 2009-06-03 | ||
US12/791,430 | 2010-06-01 | ||
US12/791,430 US8159881B2 (en) | 2009-06-03 | 2010-06-01 | Reference voltage optimization for flash memory |
PCT/US2010/037155 WO2010141650A2 (en) | 2009-06-03 | 2010-06-03 | Reference voltage optimization for flash memory |
Publications (2)
Publication Number | Publication Date |
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CN102216999A true CN102216999A (zh) | 2011-10-12 |
CN102216999B CN102216999B (zh) | 2016-08-03 |
Family
ID=42985636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080001353.3A Expired - Fee Related CN102216999B (zh) | 2009-06-03 | 2010-06-03 | 闪存的参考电压最优化 |
Country Status (3)
Country | Link |
---|---|
US (5) | US8159881B2 (zh) |
CN (1) | CN102216999B (zh) |
WO (1) | WO2010141650A2 (zh) |
Cited By (7)
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CN105321571A (zh) * | 2014-07-23 | 2016-02-10 | 爱思开海力士有限公司 | 数据储存装置及其操作方法 |
CN106205731A (zh) * | 2016-06-27 | 2016-12-07 | 联想(北京)有限公司 | 信息处理方法及存储设备 |
CN106710631A (zh) * | 2015-11-18 | 2017-05-24 | 爱思开海力士有限公司 | 数据存储装置及其操作方法 |
CN107025945A (zh) * | 2016-01-12 | 2017-08-08 | 三星电子株式会社 | 使用非线性滤波方案的存储器系统及其读取方法 |
CN108761170A (zh) * | 2018-05-18 | 2018-11-06 | 广东工业大学 | 一种nand参考电压测量方法、系统、设备及存储介质 |
WO2023155284A1 (zh) * | 2022-02-18 | 2023-08-24 | 长鑫存储技术有限公司 | 存储芯片的测试方法及其装置 |
US11901024B2 (en) | 2022-02-18 | 2024-02-13 | Changxin Memory Technologies, Inc. | Method and device for testing memory chip |
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WO2009072104A2 (en) | 2007-12-05 | 2009-06-11 | Densbits Technologies Ltd. | Flash memory device with physical cell value deterioration accommodation and methods useful in conjunction therewith |
US8359516B2 (en) | 2007-12-12 | 2013-01-22 | Densbits Technologies Ltd. | Systems and methods for error correction and decoding on multi-level physical media |
WO2009118720A2 (en) | 2008-03-25 | 2009-10-01 | Densbits Technologies Ltd. | Apparatus and methods for hardware-efficient unbiased rounding |
US8458574B2 (en) | 2009-04-06 | 2013-06-04 | Densbits Technologies Ltd. | Compact chien-search based decoding apparatus and method |
US8819385B2 (en) | 2009-04-06 | 2014-08-26 | Densbits Technologies Ltd. | Device and method for managing a flash memory |
US9330767B1 (en) | 2009-08-26 | 2016-05-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Flash memory module and method for programming a page of flash memory cells |
US8995197B1 (en) | 2009-08-26 | 2015-03-31 | Densbits Technologies Ltd. | System and methods for dynamic erase and program control for flash memory device memories |
US8730729B2 (en) | 2009-10-15 | 2014-05-20 | Densbits Technologies Ltd. | Systems and methods for averaging error rates in non-volatile devices and storage systems |
US8724387B2 (en) | 2009-10-22 | 2014-05-13 | Densbits Technologies Ltd. | Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages |
US9037777B2 (en) | 2009-12-22 | 2015-05-19 | Densbits Technologies Ltd. | Device, system, and method for reducing program/read disturb in flash arrays |
US8607124B2 (en) * | 2009-12-24 | 2013-12-10 | Densbits Technologies Ltd. | System and method for setting a flash memory cell read threshold |
US8745317B2 (en) | 2010-04-07 | 2014-06-03 | Densbits Technologies Ltd. | System and method for storing information in a multi-level cell memory |
US8621321B2 (en) | 2010-07-01 | 2013-12-31 | Densbits Technologies Ltd. | System and method for multi-dimensional encoding and decoding |
US8964464B2 (en) | 2010-08-24 | 2015-02-24 | Densbits Technologies Ltd. | System and method for accelerated sampling |
US9063878B2 (en) | 2010-11-03 | 2015-06-23 | Densbits Technologies Ltd. | Method, system and computer readable medium for copy back |
US8850100B2 (en) | 2010-12-07 | 2014-09-30 | Densbits Technologies Ltd. | Interleaving codeword portions between multiple planes and/or dies of a flash memory device |
US8649215B2 (en) | 2010-12-22 | 2014-02-11 | HGST Netherlands B.V. | Data management in flash memory using probability of charge disturbances |
US8599609B2 (en) | 2010-12-22 | 2013-12-03 | HGST Netherlands B.V. | Data management in flash memory using probability of charge disturbances |
US8369143B2 (en) | 2010-12-22 | 2013-02-05 | HGST Netherlands B.V. | Early detection of degradation in NOR flash memory |
US8422296B2 (en) | 2010-12-22 | 2013-04-16 | HGST Netherlands B.V. | Early detection of degradation in NAND flash memory |
US8422303B2 (en) | 2010-12-22 | 2013-04-16 | HGST Netherlands B.V. | Early degradation detection in flash memory using test cells |
US8990665B1 (en) | 2011-04-06 | 2015-03-24 | Densbits Technologies Ltd. | System, method and computer program product for joint search of a read threshold and soft decoding |
US8996790B1 (en) | 2011-05-12 | 2015-03-31 | Densbits Technologies Ltd. | System and method for flash memory management |
US9396106B2 (en) | 2011-05-12 | 2016-07-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Advanced management of a non-volatile memory |
US9195592B1 (en) | 2011-05-12 | 2015-11-24 | Densbits Technologies Ltd. | Advanced management of a non-volatile memory |
US9501392B1 (en) | 2011-05-12 | 2016-11-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Management of a non-volatile memory module |
US9372792B1 (en) | 2011-05-12 | 2016-06-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Advanced management of a non-volatile memory |
US9110785B1 (en) | 2011-05-12 | 2015-08-18 | Densbits Technologies Ltd. | Ordered merge of data sectors that belong to memory space portions |
CN103946813B (zh) * | 2011-09-30 | 2017-08-25 | 英特尔公司 | 基于使用统计量追踪的远存储器访问信号的生成 |
CN103946811B (zh) | 2011-09-30 | 2017-08-11 | 英特尔公司 | 用于实现具有不同操作模式的多级存储器分级结构的设备和方法 |
CN103946812B (zh) | 2011-09-30 | 2017-06-09 | 英特尔公司 | 用于实现多级别存储器分级体系的设备和方法 |
EP2761480A4 (en) | 2011-09-30 | 2015-06-24 | Intel Corp | APPARATUS AND METHOD FOR IMPLEMENTING MULTINIVE MEMORY HIERARCHY ON COMMON MEMORY CHANNELS |
US9342453B2 (en) | 2011-09-30 | 2016-05-17 | Intel Corporation | Memory channel that supports near memory and far memory access |
US8947941B2 (en) | 2012-02-09 | 2015-02-03 | Densbits Technologies Ltd. | State responsive operations relating to flash memory cells |
US8996788B2 (en) | 2012-02-09 | 2015-03-31 | Densbits Technologies Ltd. | Configurable flash interface |
US8996793B1 (en) | 2012-04-24 | 2015-03-31 | Densbits Technologies Ltd. | System, method and computer readable medium for generating soft information |
US9645177B2 (en) * | 2012-05-04 | 2017-05-09 | Seagate Technology Llc | Retention-drift-history-based non-volatile memory read threshold optimization |
US8838937B1 (en) | 2012-05-23 | 2014-09-16 | Densbits Technologies Ltd. | Methods, systems and computer readable medium for writing and reading data |
US8879325B1 (en) | 2012-05-30 | 2014-11-04 | Densbits Technologies Ltd. | System, method and computer program product for processing read threshold information and for reading a flash memory module |
US8792281B2 (en) | 2012-08-21 | 2014-07-29 | Apple Inc. | Read threshold estimation in analog memory cells using simultaneous multi-voltage sense |
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US9036417B2 (en) * | 2012-09-06 | 2015-05-19 | Sandisk Technologies Inc. | On chip dynamic read level scan and error detection for nonvolatile storage |
US9368225B1 (en) | 2012-11-21 | 2016-06-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Determining read thresholds based upon read error direction statistics |
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US9069659B1 (en) | 2013-01-03 | 2015-06-30 | Densbits Technologies Ltd. | Read threshold determination using reference read threshold |
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US9136876B1 (en) | 2013-06-13 | 2015-09-15 | Densbits Technologies Ltd. | Size limited multi-dimensional decoding |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN105321571A (zh) * | 2014-07-23 | 2016-02-10 | 爱思开海力士有限公司 | 数据储存装置及其操作方法 |
CN105321571B (zh) * | 2014-07-23 | 2020-12-15 | 爱思开海力士有限公司 | 数据储存装置及其操作方法 |
TWI711965B (zh) * | 2015-11-18 | 2020-12-01 | 韓商愛思開海力士有限公司 | 資料儲存裝置及其操作方法 |
CN106710631B (zh) * | 2015-11-18 | 2021-10-01 | 爱思开海力士有限公司 | 数据存储装置及其操作方法 |
CN106710631A (zh) * | 2015-11-18 | 2017-05-24 | 爱思开海力士有限公司 | 数据存储装置及其操作方法 |
CN107025945A (zh) * | 2016-01-12 | 2017-08-08 | 三星电子株式会社 | 使用非线性滤波方案的存储器系统及其读取方法 |
CN107025945B (zh) * | 2016-01-12 | 2022-05-24 | 三星电子株式会社 | 使用非线性滤波方案的存储器系统及其读取方法 |
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WO2023155284A1 (zh) * | 2022-02-18 | 2023-08-24 | 长鑫存储技术有限公司 | 存储芯片的测试方法及其装置 |
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WO2010141650A3 (en) | 2011-08-11 |
US20140321204A1 (en) | 2014-10-30 |
US20130223146A1 (en) | 2013-08-29 |
WO2010141650A2 (en) | 2010-12-09 |
US8630121B2 (en) | 2014-01-14 |
US8780637B2 (en) | 2014-07-15 |
CN102216999B (zh) | 2016-08-03 |
US20100309726A1 (en) | 2010-12-09 |
US8416623B2 (en) | 2013-04-09 |
US8958250B2 (en) | 2015-02-17 |
US20140126294A1 (en) | 2014-05-08 |
US8159881B2 (en) | 2012-04-17 |
US20120236655A1 (en) | 2012-09-20 |
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