CN102216992A - 具有非易失性存储器模块的海量数据存储系统 - Google Patents
具有非易失性存储器模块的海量数据存储系统 Download PDFInfo
- Publication number
- CN102216992A CN102216992A CN2009801460688A CN200980146068A CN102216992A CN 102216992 A CN102216992 A CN 102216992A CN 2009801460688 A CN2009801460688 A CN 2009801460688A CN 200980146068 A CN200980146068 A CN 200980146068A CN 102216992 A CN102216992 A CN 102216992A
- Authority
- CN
- China
- Prior art keywords
- volatile memory
- memory device
- connector
- memory module
- chain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1003—Interface circuits for daisy chain or ring bus memory arrangements
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/20—Employing a main memory using a specific memory technology
- G06F2212/205—Hybrid memory, e.g. using both volatile and non-volatile memory
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (48)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/212,902 US10236032B2 (en) | 2008-09-18 | 2008-09-18 | Mass data storage system with non-volatile memory modules |
US12/212902 | 2008-09-18 | ||
PCT/CA2009/001195 WO2010031160A1 (en) | 2008-09-18 | 2009-08-27 | Mass data storage system with non-volatile memory modules |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102216992A true CN102216992A (zh) | 2011-10-12 |
Family
ID=42007086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009801460688A Pending CN102216992A (zh) | 2008-09-18 | 2009-08-27 | 具有非易失性存储器模块的海量数据存储系统 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10236032B2 (zh) |
EP (1) | EP2342712A4 (zh) |
JP (1) | JP2012503237A (zh) |
KR (1) | KR20110081809A (zh) |
CN (1) | CN102216992A (zh) |
CA (1) | CA2774396A1 (zh) |
TW (1) | TW201025017A (zh) |
WO (1) | WO2010031160A1 (zh) |
Cited By (3)
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CN103959386A (zh) * | 2011-11-02 | 2014-07-30 | 莫塞德技术公司 | 闪存模块和存储子系统 |
CN110392092A (zh) * | 2018-04-17 | 2019-10-29 | 三星电子株式会社 | 与网络结构连接的网络存储设备 |
CN112286458A (zh) * | 2018-06-27 | 2021-01-29 | 华为技术有限公司 | 一种盘片、存储系统及盘片配置方法 |
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JP4754235B2 (ja) * | 2005-02-21 | 2011-08-24 | Ntn株式会社 | 回転伝達装置 |
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JP4575484B2 (ja) * | 2008-09-26 | 2010-11-04 | 株式会社東芝 | 記憶装置及び記憶装置の制御方法 |
US8472199B2 (en) | 2008-11-13 | 2013-06-25 | Mosaid Technologies Incorporated | System including a plurality of encapsulated semiconductor chips |
US8582382B2 (en) * | 2010-03-23 | 2013-11-12 | Mosaid Technologies Incorporated | Memory system having a plurality of serially connected devices |
US8843692B2 (en) | 2010-04-27 | 2014-09-23 | Conversant Intellectual Property Management Inc. | System of interconnected nonvolatile memories having automatic status packet |
KR101729507B1 (ko) | 2010-06-30 | 2017-04-24 | 삼성전자 주식회사 | 회로기판유닛 및 이를 가지는 컴퓨터 디바이스 |
US8972620B2 (en) * | 2010-07-02 | 2015-03-03 | Dell Products L.P. | Methods and systems to simplify population of modular components in an information handling system |
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TWM411679U (en) * | 2011-03-22 | 2011-09-11 | Tuton Technology Co Ltd | Connector expansion module implemented through PCI-E bus |
US20130170129A1 (en) * | 2011-11-10 | 2013-07-04 | Jason A. Sullivan | Systems and methods for providing a dynamic electronic storage unit |
US8896066B2 (en) | 2011-12-20 | 2014-11-25 | Intel Corporation | Tin doped III-V material contacts |
US9153583B2 (en) | 2011-12-20 | 2015-10-06 | Intel Corporation | III-V layers for N-type and P-type MOS source-drain contacts |
US9128662B2 (en) * | 2011-12-23 | 2015-09-08 | Novachips Canada Inc. | Solid state drive memory system |
KR20130092110A (ko) * | 2012-02-10 | 2013-08-20 | 삼성전자주식회사 | 임베디드 솔리드 스테이트 디스크 및 솔리드 스테이트 디스크 |
CN103703448B (zh) * | 2012-05-14 | 2017-07-14 | 华为技术有限公司 | 一种内存调度方法及内存控制器 |
USD709894S1 (en) | 2012-09-22 | 2014-07-29 | Apple Inc. | Electronic device |
JP5983254B2 (ja) * | 2012-09-28 | 2016-08-31 | 豊和工業株式会社 | 回路基板 |
JP5985403B2 (ja) * | 2013-01-10 | 2016-09-06 | 株式会社東芝 | ストレージ装置 |
TW201433924A (zh) * | 2013-02-21 | 2014-09-01 | Hon Hai Prec Ind Co Ltd | 存儲擴展系統 |
US20140244900A1 (en) * | 2013-02-28 | 2014-08-28 | Spansion Llc | Non-volatile memory based system ram |
US9898410B2 (en) * | 2013-09-10 | 2018-02-20 | Intel Corporation | Hybrid main memory using a fine-grain level of remapping |
KR20150031963A (ko) | 2013-09-17 | 2015-03-25 | 삼성전자주식회사 | 메모리 모듈 및 그것의 제조 방법 |
KR20150047784A (ko) * | 2013-10-25 | 2015-05-06 | 삼성전자주식회사 | 서버 시스템 및 스토리지 시스템 |
TWI494944B (zh) * | 2013-10-25 | 2015-08-01 | Phison Electronics Corp | 記憶體模組偵測方法、記憶體控制電路單元及儲存裝置 |
AU2014348774A1 (en) * | 2013-11-12 | 2016-06-30 | Western Digital Technologies, Inc. | Apparatus and method for routing information in a non-volatile memory-based storage device |
US9336134B2 (en) * | 2013-11-12 | 2016-05-10 | Skyera, Llc | Apparatus and method for accessing a non-volatile memory blade using multiple controllers in a non-volatile memory based storage device |
US9229855B2 (en) | 2013-11-12 | 2016-01-05 | Skyera, Llc | Apparatus and method for routing information in a non-volatile memory-based storage device |
US9396065B2 (en) * | 2014-06-25 | 2016-07-19 | Intel Corporation | Extensible memory hub |
US10466923B2 (en) * | 2015-02-27 | 2019-11-05 | Samsung Electronics Co., Ltd. | Modular non-volatile flash memory blade |
US10582626B2 (en) | 2015-04-29 | 2020-03-03 | Hewlett Packard Enterprise Development Lp | Converged infrastructure manager |
US10108377B2 (en) | 2015-11-13 | 2018-10-23 | Western Digital Technologies, Inc. | Storage processing unit arrays and methods of use |
JP6244067B1 (ja) * | 2016-05-16 | 2017-12-06 | 株式会社ExaScaler | 液浸冷却用電子機器 |
JP6828271B2 (ja) * | 2016-05-18 | 2021-02-10 | ソニー株式会社 | 通信装置、通信方法、プログラム、および、通信システム |
KR101913784B1 (ko) * | 2016-06-01 | 2018-11-02 | 주식회사 스토리지안 | 에스에스디 멀티플러 및 이에 기반한 스토리지 시스템 |
US10573354B2 (en) * | 2016-09-22 | 2020-02-25 | Smart Modular Technologies, Inc. | High density memory module system |
KR102640968B1 (ko) | 2018-05-29 | 2024-02-27 | 삼성전자주식회사 | 인쇄 회로 기판, 스토리지 장치, 및 인쇄 회로 기판을 포함하는 스토리지 장치 |
US10817430B2 (en) * | 2018-10-02 | 2020-10-27 | Micron Technology, Inc. | Access unit and management segment memory operations |
CN110619914A (zh) * | 2019-08-30 | 2019-12-27 | 深圳忆联信息系统有限公司 | 一种带PCIe接口量产器用于固态硬盘的量产方法 |
JP2021043848A (ja) * | 2019-09-13 | 2021-03-18 | キオクシア株式会社 | メモリシステム |
TWI795644B (zh) * | 2020-06-02 | 2023-03-11 | 大陸商上海兆芯集成電路有限公司 | 電子總成 |
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2008
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-
2009
- 2009-08-27 TW TW098128854A patent/TW201025017A/zh unknown
- 2009-08-27 KR KR1020117006236A patent/KR20110081809A/ko not_active Application Discontinuation
- 2009-08-27 JP JP2011527160A patent/JP2012503237A/ja active Pending
- 2009-08-27 CN CN2009801460688A patent/CN102216992A/zh active Pending
- 2009-08-27 WO PCT/CA2009/001195 patent/WO2010031160A1/en active Application Filing
- 2009-08-27 CA CA2774396A patent/CA2774396A1/en not_active Abandoned
- 2009-08-27 EP EP09813922A patent/EP2342712A4/en not_active Withdrawn
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103959386A (zh) * | 2011-11-02 | 2014-07-30 | 莫塞德技术公司 | 闪存模块和存储子系统 |
CN110392092A (zh) * | 2018-04-17 | 2019-10-29 | 三星电子株式会社 | 与网络结构连接的网络存储设备 |
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CN112286458A (zh) * | 2018-06-27 | 2021-01-29 | 华为技术有限公司 | 一种盘片、存储系统及盘片配置方法 |
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WO2010031160A1 (en) | 2010-03-25 |
JP2012503237A (ja) | 2012-02-02 |
TW201025017A (en) | 2010-07-01 |
US10236032B2 (en) | 2019-03-19 |
EP2342712A1 (en) | 2011-07-13 |
EP2342712A4 (en) | 2012-05-30 |
KR20110081809A (ko) | 2011-07-14 |
CA2774396A1 (en) | 2010-03-25 |
US20100067278A1 (en) | 2010-03-18 |
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